Matches 201 - 250 out of 438 < 1 2 3 4 5 6 7 8 9 >


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US20060128130 Method for fabricating recessed gate structure  
The present invention relates to a method for fabricating a recessed gate structure. The method includes the steps of: selectively etching a substrate to form a plurality of openings; forming a...
US20150214314 DUAL WORK FUNCTION BURIED GATE TYPE TRANSISTOR AND METHOD FOR FABRICATING THE SAME  
A transistor includes a substrate having an active region defined by an isolation layer; a first trench defined in the active region and a second trench defined in the isolation layer; a fin...
US20130313568 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A silicon carbide substrate has a first conductivity type. The silicon carbide substrate has a first surface provided with a first electrode and a second surface provided with first trenches...
US20130075760 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE  
The present application relates to technology for improving a withstand voltage of a semiconductor device. The semiconductor device includes a termination area that surrounds a cell area. The cell...
US20100052070 NOVEL DEVICE SCHEME OF HKMG GATE-LAST PROCESS  
The present disclosure provides a method for making metal gate stacks of a semiconductor device. The method includes forming a high k dielectric material layer on a semiconductor substrate;...
US20150194430 SEMICONDUCTOR DEVICES INCLUDING A RECESSED ACCESS DEVICE AND METHODS OF FORMING SAME  
A semiconductor device comprises a recessed access device that includes a first pillar, a second pillar, a channel region connecting the first and second pillars, and a gate disposed over the...
US20110034018 DIODE ASSEMBLY  
A diode assembly comprising first and second diodes each having a different breakdown voltage, each of the first and second diodes comprising a semiconductor substrate; an electrically conducting...
US20080280430 METHOD OF FORMING FILMS IN A TRENCH  
A method of forming films in a trench is applied to the manufacturing process of a power MOS device. In one embodiment, the method comprises providing a semiconductor substrate, forming a trench...
US20080093665 Semiconductor apparatus and method of manufacturing the same  
A vertical power MOSFET includes a semiconductor substrate including a trench, a gate electrode layer having a prescribed impurity concentration and being formed inside the trench, and a cap...
US20150021681 SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THEREOF  
A manufacturing method of a semiconductor device having metal gate includes providing a substrate having a first semiconductor device formed thereon, and the first semiconductor device includes a...
US20130045594 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE HAVING METAL GATE  
A manufacturing method for a semiconductor device having a metal gate includes providing a substrate having at least a first semiconductor device formed thereon, forming a first gate trench in the...
US20100258863 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device according to the present invention having a vertical MOSFET that includes a first trench that is formed in a semiconductor substrate and includes a gate electrode of the...
US20100255649 METHODS OF FABRICATING RECESSED CHANNEL METAL OXIDE SEMICONDUCTOR (MOS) TRANSISTORS  
A method of fabricating a semiconductor device includes forming a mask pattern on an active region of a substrate defined by an isolation region. The mask pattern includes an opening therein...
US20100187602 METHODS FOR MAKING SEMICONDUCTOR DEVICES USING NITRIDE CONSUMPTION LOCOS OXIDATION  
Semiconductor devices and methods for making such devices using nitride consumption LOCOS oxidation are described. The semiconductor devices contain a planar field oxide structure that has been...
US20140038402 DUAL WORK FUNCTION FINFET STRUCTURES AND METHODS FOR FABRICATING THE SAME  
A method for fabricating a dual-workfunction FinFET structure includes depositing a first workfunction material in a layer in a plurality of trenches of the FinFET structure, depositing a...
US20120309165 SEMICONDUCTOR DEVICE HAVING GATE TRENCH AND MANUFACTURING METHOD THEREOF  
Disclosed herein is a semiconductor device that includes a trench formed across active regions and the element isolation regions. A conductive film is formed at a lower portion of the trench, and...
US20120139630 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
On a surface of a compound semiconductor layer including inner wall surfaces of an electrode trench, an etching residue 12a and an altered substance 12b which are produced due to dry etching for...
US20110008941 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE  
A method for fabricating a semiconductor device, including (a) etching a semiconductor substrate to form a first trench defining an active region; (b) forming a first spacer on sidewalls of the...
US20090142899 INTERFACIAL LAYER FOR HAFNIUM-BASED HIGH-K/METAL GATE TRANSISTORS  
A method of forming an interfacial layer for hafnium-based high-k/metal gate transistors comprises depositing a hafnium-based high-k dielectric layer on a semiconductor substrate and then...
US20150024584 METHODS FOR FORMING INTEGRATED CIRCUITS WITH REDUCED REPLACEMENT METAL GATE HEIGHT VARIABILITY  
Methods for fabricating integrated circuits with reduced replacement metal gate height variability are provided. In an embodiment, a method includes providing a semiconductor substrate with a fin...
US20120094455 SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL TRANSISTOR AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device and method of manufacturing the same. The method includes: defining a first active area and a second active area on a substrate, the first and second active areas being in a...
US20110241098 3D STACKED ARRAY HAVING CUT-OFF GATE LINE AND FABRICATION METHOD THEREOF  
A three-dimensional stacked flash memory array having cut-off gate line and a fabricating method of the same are provided. The flash memory array enables to operate two memory cells by each word...
US20100276757 RECESSED CHANNEL ARRAY TRANSISTOR (RCAT) IN REPLACEMENT METAL GATE (RMG) LOGIC FLOW  
Embodiments of the invention relate to a method of fabricating logic transistors using replacement metal gate (RMG) logic flow with modified process to form recessed channel array transistors...
US20100093166 Methods of manufacturing a semiconductor device  
In a method of manufacturing a semiconductor device, a mask pattern is formed on an active region of a substrate. An exposed portion of the substrate is removed to form a trench in the substrate....
US20100062581 METHOD OF FABRICATING NON-VOLATILE MEMORY DEVICE  
Provided is a method of fabricating a non-volatile semiconductor device. The method includes: forming a first hard mask layer over a substrate; etching the first hard mask layer and the substrate...
US20090230458 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME  
A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a...
US20080318383 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE  
A method of manufacturing a semiconductor device, including: preparing a semiconductor substrate having an element-isolating film filled in the first trench and an active region; forming a...
US20140264487 METHODS OF FORMING A SEMICONDUCTOR DEVICE WITH A PROTECTED GATE CAP LAYER AND THE RESULTING DEVICE  
One method disclosed herein includes forming first and second gate cap protection layers that encapsulate and protect a gate cap layer. A novel transistor device disclosed herein includes a gate...
US20140057424 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE  
A silicon carbide substrate is prepared which has a main surface covered with a silicon dioxide layer. In the silicon dioxide layer, an opening is formed by etching. In the opening, a residue...
US20130161717 NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME  
A three-dimensional non-volatile memory device that may increase erase operation efficiency during an erase operation using Gate-Induced Drain Leakage (GIDL) current and a method for fabricating...
US20110287619 Flash Memory Cell Arrays Having Dual Control Gates Per Memory Cell Charge Storage Element  
A flash NAND type EEPROM system with individual ones of an array of charge storage elements, such as floating gates, being capacitively coupled with at least two control gate lines. The control...
US20110001186 SEMICONDUCTOR DEVICE WITH BURIED GATE AND METHOD FOR FABRICATING THE SAME  
A semiconductor device and method for fabricating the same is provided. The semiconductor device includes a trench formed in a substrate, a junction region formed in the substrate on both sides of...
US20100123187 CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE HAVING TRENCH SHIELD ELECTRODE AND METHOD  
In one embodiment, a contact structure for a semiconductor device having a trench shield electrode includes a gate electrode contact portion and a shield electrode contact portion within a trench...
US20090239366 Method Of Forming A Transistor Gate Of A Recessed Access Device, Method Of Forming A Recessed Transistor Gate And A Non-Recessed Transistor Gate, And Method Of Fabricating An Integrated Circuit  
Methods and structures are provided for full silicidation of recessed silicon. Silicon is provided within a trench. A mixture of metals is provided over the silicon in which one of the metals...
US20080274606 Method of manufacturing semiconductor device  
Each of channel regions 2a and 3b is covered by a gate electrode 6 via a gate insulation film 5 and side wall spacers 9 from its top face to both side faces along an x-direction. In other words,...
US20140054690 SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF  
A semiconductor device and a fabricating method thereof are provided, in which the semiconductor device includes a semiconductor substrate with a trench formed therein, a bottom electrode placed...
US20140015039 METHOD OF MAKING AN INSULATED GATE SEMICONDUCTOR DEVICE HAVING A SHIELD ELECTRODE STRUCTURE AND STRUCTURE THEREFOR  
In one embodiment, a semiconductor device includes a multi-portion shield electrode structure formed in a drift region. The shield electrode includes a wide portion formed in proximity to a...
US20130109165 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH VERTICAL GATE TRANSISTOR  
A method for manufacturing a semiconductor device includes forming a plurality of pillars by etching a semiconductor substrate, forming a gate dielectric layer on sidewalls of the pillars and on...
US20120088358 Methods of Forming Gates of Semiconductor Devices  
Methods of forming gates of semiconductor devices are provided. The methods may include forming a first recess in a first substrate region having a first conductivity type and forming a second...
US20110068387 Semiconductor device including vertical transistor and horizontal transistor and method of manufacturing the same  
A semiconductor device includes a semiconductor substrate, a vertical transistor, a horizontal transistor, a lead, wire-bonding pads, and penetrating electrodes. The semiconductor substrate has...
US20100207205 Structures and Methods for Improving Trench-Shielded Semiconductor Devices and Schottky Barrier Rectifier Devices  
Various structures and methods for improving the performance of trench-shielded power semiconductor devices and the like are described.
US20100148249 Method Of Manufacturing A Memory Device  
A memory device comprises an active area comprising a source and at least two drains defining a first axis. At least two substantially parallel word lines are defined by a first pitch, with one...
US20090298273 METHODS OF FORMING RECESSED GATE ELECTRODES HAVING COVERED LAYER INTERFACES  
Methods of forming a gate electrode can be provided by forming a trench in a substrate, conformally forming a polysilicon layer to provide a polysilicon conformal layer in the trench defining a...
US20080227281 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH RECESS GATE  
A method for fabricating a semiconductor device includes forming a sacrificial layer having a stack structure of a first insulation layer, a first conductive layer and a second insulation layer...
US20140159134 NON-VOLATILE MEMORY AND MANUFACTURING METHOD THEREOF  
A non-volatile memory and a manufacturing method thereof are provided. The non-volatile memory including a gate structure disposed on a substrate, doped regions, charge storage layers, and a first...
US20140145257 SEMICONDUCTOR DEVICE HAVING A METAL RECESS  
Provided is a semiconductor device (e.g., transistor such as a FinFET or planar device) having a a liner layer and a metal layer (e.g., Tungsten (W)) in a trench (e.g., via CVD and/or ALD). A...
US20140064004 SEMICONDUCTOR DEVICE INCLUDING BURIED GATE, MODULE AND SYSTEM, AND METHOD FOR MANUFACTURING  
An embodiment of the semiconductor device includes a recess formed in an active region, a gate buried in a lower part of the recess, a first capping insulation film formed over the gate, a second...
US20140015063 Method for Forming Gate Structure, Method for Forming Semiconductor Device, and Semiconductor Device  
A method for forming a gate structure, comprising: providing a substrate, where the substrate includes a nMOSFET area and a pMOSFET area, each of the nMOSFET area and the pMOSFET area has a gate...
US20130149825 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME  
A semiconductor device which combines reliability and the guarantee of electrical characteristics is provided. A power MOSFET and a protection circuit formed over the same semiconductor substrate...
US20130122685 Method of Manufacturing a Semiconductor Device  
A method of manufacturing a semiconductor device, the method including: forming a plurality of first trenches extending in one direction in at least a part of a substrate; forming a plurality of...

Matches 201 - 250 out of 438 < 1 2 3 4 5 6 7 8 9 >