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US20120199902 TRENCH MOS BARRIER SCHOTTKY (TMBS) HAVING MULTIPLE FLOATING GATES  
A semiconductor rectifier is provided which includes a semiconductor substrate having a first type of conductivity. An epitaxial layer is formed on the substrate. The epitaxial layer has the first...
US20110193172 CROSS-HAIR CELL WORDLINE FORMATION  
Disclosed are methods and devices depicting fabrication of non-planar access devices having fins and narrow trenches, among which is a method that includes wet etching a conductor to form a...
US20130175548 SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME  
A fabrication method for a semiconductor device includes the step of forming a gate insulating film on the side of a trench, the bottom thereof, and the periphery thereof. The step of forming a...
US20080311733 Method for fabricating semiconductor device with gate line of fine line width  
A method for fabricating a semiconductor device including forming a gate insulation layer, a conductive layer for a gate electrode, and an insulation layer for a gate hard mask over a substrate,...
US20130146951 CROSS-HAIR CELL WORDLINE FORMATION  
Methods and devices depicting fabrication of non-planar access devices having fins and narrow trenches, among which is a method that includes wet etching a conductor to form a recessed region and...
US20110215397 HIGH CELL DENSITY TRENCHED POWER SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF  
The fabrication method of a high cell density trenched power semiconductor structure is provided. The fabrication method comprises the steps of: a) forming at least a gate trench in a substrate...
US20130001678 HIGH BREAKDOWN VOLTAGE SEMICONDUCTOR DEVICE WITH AN INSULATED GATE FORMED IN A TRENCH, AND MANUFACTURING PROCESS THEREOF  
A semiconductor device includes: a semiconductor body; a trench having side walls and a bottom; a gate region made of conductive material, extending within the trench; an insulating region,...
US20100129958 METHOD AND APPARATUS FOR TRENCH AND VIA PROFILE MODIFICATION  
Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to methods...
US20110275208 SHIELD CONTACTS IN A SHIELDED GATE MOSFET  
A semiconductor structure is formed as follows. Trenches are formed in a semiconductor region and a shield electrode is formed in each trench. Gate electrodes are formed in a portion of the...
US20150221734 THICKER BOTTOM OXIDE FOR REDUCED MILLER CAPACITANCE IN TRENCH METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET)  
Semiconductor device fabrication method and devices are disclosed. The semiconductor power device is formed on a semiconductor substrate having a plurality of trench transistor cells each having a...
US20130183820 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE  
A silicon carbide layer is thermally etched by supplying the silicon carbide layer with a process gas that can chemically react with silicon carbide, while heating the silicon carbide layer. With...
US20100264486 FIELD PLATE TRENCH MOSFET TRANSISTOR WITH GRADED DIELECTRIC LINER THICKNESS  
An electronic device has a plurality of trenches formed in a semiconducting layer. A vertical drift region is located between and adjacent the trenches. An electrode is located within each trench,...
US20090039422 RECESS GATE OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME  
A method for fabricating a semiconductor device, and more particularly, a method for forming a recess gate is disclosed. The method for forming a recess gate includes forming a first nitride layer...
US20130256787 MULTI-LANDING CONTACT ETCHING  
A method for contacting MOS devices. First openings in a photosensitive material are formed over a substrate having a top dielectric in a first die area and a second opening over a gate stack in a...
US20140099784 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE  
A method for manufacturing a semiconductor device includes forming an insulation film including a trench on a substrate, forming a first metal gate film pattern and a second metal gate film...
US20080164514 Semiconductor device having three-demensional transistor and manufacturing method thereof  
A semiconductor device includes an active region surrounded by an element isolation region; a gate electrode crossing the active region; and at least one slit provided at a boundary portion...
US20080064165 DUAL STORAGE NODE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME  
Dual storage node memory devices and methods for fabricating dual storage node memory devices have been provided. In accordance with an exemplary embodiment, a method includes the steps of etching...
US20120025304 Trench Semiconductor Device and Method of Manufacturing  
A semiconductor device includes a semiconductor body including a trench with first and second opposing sidewalls. A first electrode is arranged in a lower portion of the trench and a second...
US20130341712 TRENCH SHIELDING STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD  
A shielding structure for a semiconductor device includes a plurality of trenches. The trenches include passivation liners and shield electrodes, which are formed therein. In one embodiment, the...
US20130323921 METHOD OF MAKING AN INSULATED GATE SEMICONDUCTOR DEVICE AND STRUCTURE  
In one embodiment, a trench shield electrode layer is separated from a trench gate electrode by an inter-electrode dielectric layer. A conformal deposited dielectric layer is formed as part of a...
US20060278934 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE  
A semiconductor device including, on a substrate, a first conduction type MOS transistor having a gate electrode provided in a first trench formed in an insulation film on the substrate, and a...
US20140291754 SEMICONDUCTOR STRUCTURE HAVING BURIED WORD LINE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor structure having buried word line formed in a trench in a semiconductor substrate includes a gate oxide layer, a gate conductor, a gate cap layer, a blocking layer, and an...
US20120126885 DOUBLE GATED 4F2 DRAM CHC CELL AND METHODS OF FABRICATING THE SAME  
A semiconductor device is provided that includes a fin having a first gate and a second gate formed on a first sidewall of the fin in a first trench, wherein the first gate is formed above the...
US20100062582 METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE  
There is provided a method of manufacturing a silicon carbide semiconductor device including the steps of: in a semiconductor stacked substrate including a first conductivity type silicon carbide...
US20090111255 METHOD FOR FABRICATING TRANSISTOR IN SEMICONDUCTOR DEVICE  
Provided is a method for fabricating a transistor in a semiconductor device. The method includes forming an etch stop layer pattern over a semiconductor substrate; forming a semiconductor layer...
US20070007571 Semiconductor device with a buried gate and method of forming the same  
An embodiment of the invention provides a semiconductor fabrication method. The method comprises forming an isolation region between a first and a second region in a substrate, forming a recess in...
US20110300700 SEMICONDUCTOR DEVICE HAVING A HIGH ASPECT RATIO ISOLATION TRENCH AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor device having high aspect ratio isolation trenches and a method for manufacturing the same is presented. The semiconductor device includes a semiconductor substrate, a first...
US20100090289 SEMICONDUCTOR DEVICES HAVING FACETED SILICIDE CONTACTS, AND RELATED FABRICATION METHODS  
The disclosed subject matter relates to semiconductor transistor devices and associated fabrication techniques that can be utilized to form silicide contacts having an increased effective size,...
US20090218619 Self-aligned slotted accumulation-mode field effect transistor (AccuFET) structure and method  
This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device includes trenched gates each having a stick-up gate segment extended...
US20070048942 Methods of forming field effect transistors on substrates  
The invention includes methods of forming field effect transistors. In one implementation, the invention encompasses a method of forming a field effect transistor on a substrate, where the field...
US20120104490 Trench-Gate Field Effect Transistors and Methods of Forming the Same  
A field effect transistor includes a body region of a first conductivity type over a semiconductor region of a second conductivity type. A gate trench extends through the body region and...
US20120156868 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH BURIED WORD LINE  
A method for fabricating a semiconductor device includes etching a substrate to form a plurality of bodies isolated by a first trench, forming a buried bit line gap-filling a portion of the first...
US20090294839 RECESSED CHANNEL ARRAY TRANSISTOR (RCAT) STRUCTURES AND METHOD OF FORMATION  
Recessed channel array transistor (RCAT) structures and method of formation are generally described. In one example, an electronic device includes a semiconductor substrate, a first fin coupled...
US20090203204 Methods of manufacturing semiconductor device having recess channel array transistor  
Methods of manufacturing a semiconductor device having an RCAT are provided. The method includes forming a first recess having a first depth formed in an active region of a semiconductor...
US20070166972 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD  
A semiconductor substrate includes a plurality of isolation regions formed therein and having a trench in a region between the isolation wells, a gate insulating layer formed within the trench, a...
US20130302958 METHOD OF MAKING AN INSULATED GATE SEMICONDUCTOR DEVICE HAVING A SHIELD ELECTRODE STRUCTURE  
In one embodiment, a method for forming a semiconductor device includes forming trench and a dielectric layer along surfaces of the trench. A shield electrode is formed in a lower portion of the...
US20120012924 Vertical Transistor Component  
A vertical transistor component is produced by providing a semiconductor body with a first surface and a second surface, producing at least one gate contact electrode in a trench, the trench...
US20150079777 Method of Manufacturing Semiconductor Device Having Metal Gate  
A method of manufacturing a semiconductor device having a metal gate is provided. A substrate having a first conductive type transistor and a second conductive type transistor formed thereon is...
US20120319216 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD  
A semiconductor device having reduced leakage current and increased capacitance without increasing an equivalent oxide thickness (EOT) can be manufactured by a method that includes providing a...
US20090045458 MOS TRANSISTORS FOR THIN SOI INTEGRATION AND METHODS FOR FABRICATING THE SAME  
MOS transistors for thin SOI integration and methods for fabricating such MOS transistors are provided. One exemplary method includes the steps of providing a silicon layer overlying a buried...
US20070190728 LOW RESISTANCE GATE FOR POWER MOSFET APPLICATIONS AND METHOD OF MANUFACTURE  
A trench gate field effect transistor is formed as follows. A trench is formed in a semiconductor region, followed by a dielectric layer lining sidewalls and bottom of the trench and extending...
US20150056796 METHOD FOR FORMING A SEMICONDUCTOR DEVICE HAVING A METAL GATE RECESS  
Provided are approaches of forming a semiconductor device (e.g., transistor such as a FinFET or planar device) having a gate metal recess. In one approach, a liner layer and a metal layer (e.g.,...
US20110003458 METHOD OF FORMING DEVICE ISOLATION LAYER AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE  
Provided are a method of forming a device isolation layer and a method of fabricating a semiconductor device. The method includes: forming a first trench and a second trench in a substrate,...
US20100301401 SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS THAT USE COMPRESSIVE MATERIAL WITH A REPLACEMENT GATE TECHNIQUE  
A semiconductor device and related method of fabricating it are provided. An exemplary fabrication process begins by forming a gate structure overlying a layer of semiconductor material, the gate...
US20080012053 Method of manufacturing semiconductor device having trench-gate transistor  
A method of manufacturing a semiconductor device includes: a first step of forming an STI region and an active region surrounded by the STI region on a semiconductor substrate; a second step of...
US20130065384 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE  
A mask layer is formed on a silicon carbide layer by a deposition method. The mask layer is patterned. A gate trench having a side wall is formed by removing a portion of the silicon carbide layer...
US20100078718 SEMICONDUCTOR DEVICE AND METHODS FOR PRODUCING A SEMICONDUCTOR DEVICE  
A semiconductor device includes a semiconductor substrate, a trench, a buried insulated source electrode arranged in a bottom portion of the trench, a first gate electrode and a second gate...
US20090302398 Methods of forming replacement metal gate structures with recessed channel  
Methods and associated structures of forming a microelectronic device are described. Those methods may comprise forming a transistor comprising a metal gate disposed on a gate dielectric that is...
US20080182395 METHOD FOR FORMING PATTERN IN SEMICONDUCTOR DEVICE  
A method for fabricating a dual polysilicon gate includes providing a substrate, forming a gate oxide layer over the substrate, forming a polysilicon layer over the gate oxide layer, patterning...
US20110020992 Integrated Nanostructure-Based Non-Volatile Memory Fabrication  
Nanostructure-based charge storage regions are included in non-volatile memory devices and integrated with the fabrication of select gates and peripheral circuitry. One or more nanostructure...
Matches 151 - 200 out of 438 < 1 2 3 4 5 6 7 8 9 >