Matches 101 - 150 out of 438 < 1 2 3 4 5 6 7 8 9 >


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US20110266616 TRENCHED POWER SEMICONDUCTOR STRUCTURE WITH REDUCED GATE IMPEDANCE AND FABRICATION METHOD THEREOF  
A trenched power semiconductor structure with reduced gate impedance and a fabrication method thereof is provided. The trenched power semiconductor structure has a silicon base, a gate trench, a...
US20110031551 Structure and Method For Forming Laterally Extending Dielectric Layer in a Trench-Gate FET  
A FET is formed as follows. A trench is formed in a silicon region. A shield electrode is formed in a bottom portion of the trench. The shield electrode is insulated from adjacent silicon region...
US20110275210 METHOD OF MAKING VERTICAL TRANSISTOR WITH GRADED FIELD PLATE DIELECTRIC  
An electronic device has a plurality of trenches formed in a semiconductor layer. A vertical drift region is located between and adjacent the trenches. An electrode is located within each trench,...
US20080020557 METHOD FOR FORMING TRANSISTOR OF SEMICONDUCTOR DEVICE USING DOUBLE PATTERNING TECHNOLOGY  
A method for forming a transistor of a semiconductor device comprises: forming an isolation film over a semiconductor substrate to define an active region; forming a first recess in an active...
US20110045667 Gate of a transistor and method of forming the same  
A gate of a transistor includes a gate oxide layer formed on a semiconductor device, a first conductive layer pattern including polysilicon doped with boron and formed on the gate oxide layer, a...
US20140159140 BURIED WORD LINE STRUCTURE AND METHOD OF FORMING THE SAME  
A method of forming a buried word line structure is provided. A first mask layer, an interlayer and a second mask layer are sequentially formed on a substrate, wherein the second mask layer has a...
US20060216917 Method for forming recess gate of semiconductor device  
Provided is a method for semiconductor device. In formation of a RCAT (Recess Channel Array Transistor) for increasing a channel length of a gate, that is, a recess gate, a gate polysilicon layer...
US20050090073 MOS transistor having improved total radiation-induced leakage current  
A shallow-trench isolation includes a semiconductor substrate. Spaced apart source and drain regions define an active region in the semiconductor substrate. A single isolation trench is in the...
US20080153277 Exposure Mask and Method for Fabricating Semiconductor Device Using the Same  
An exposure mask for recess gate includes a transparent substrate and a recess gate pattern. The recess gate pattern is disposed over the transparent substrate. The recess gate pattern includes a...
US20130285134 NON-VOLATILE MEMORY DEVICE FORMED WITH ETCH STOP LAYER IN SHALLOW TRENCH ISOLATION REGION  
A method includes forming a shallow trench isolation (STI) region in a substrate, the STI region comprising an etch stop layer; etching the STI region by a first etch to the etch stop layer to...
US20130341710 METHOD OF FABRICATING SEMICONDUCTOR DEVICE  
A method of fabricating a semiconductor device includes forming a first preliminary gate barrier layer and a first preliminary gate electrode recessed to have a first depth from the surface of the...
US20110024829 SEMICONDUCTOR DEVICE HAVING VOIDS ALONG BURIED GATES AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor device having voids along buried gates and a method of manufacturing the same is presented. The semiconductor device includes recesses, a first gate electrode, a second gate...
US20090146243 Semiconductor Device Having Recessed Channel and Method for Manufacturing the Same  
A semiconductor device having a recessed channel and a method for manufacturing the same. The semiconductor device comprises a semiconductor substrate formed with an isolation layer defining an...
US20130313637 TRANSISTOR AND METHOD OF MANUFACTURING THE SAME  
A transistor having a source region, a drain region, a plurality of trenches extended in the longitudinal direction of a channel between the source region and the drain region and arranged in...
US20080166864 METHOD FOR FORMING TRENCH GATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE  
A method for forming trench gates is provided with a step of forming gate trenches on a semiconductor substrate, and a step of forming an element isolation region on the semiconductor substrate on...
US20150221742 SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF  
The semiconductor device includes a substrate, a trench formed in the substrate, a gate insulation layer conformally formed on the inner surface of the trench, buried gate electrodes formed on the...
US20140209906 Method of Fabricating GOI Silicon Wafer, GOI Silicon Wafer and GOI Detection Method  
The invention discloses a method of fabricating a GOI silicon wafer, a GOI silicon wafer, and a method of GOI detection on the fabricated GOI silicon wafer, where the method of fabricating a GOI...
US20080160742 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH RECESS GATE  
A method for fabricating a semiconductor device having a recess gate includes forming a first recess pattern by etching the substrate and a sidewall protection layer on sidewalls of the first...
US20140004694 METAL GATE ELECTRODE OF A FIELD EFFECT TRANSISTOR  
A method of fabricating a metal gate electrode of a field effect transistor includes forming a dielectric layer over an active region, and forming an opening in the dielectric layer. The method...
US20120056241 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device includes a drift layer, a base layer on the drift layer, and trench gate structures. Each trench gate structure includes a trench reaching the drift layer by penetrating the...
US20060216895 Power semiconductor device having buried gate bus and process for fabricating the same  
A power semiconductor device includes a substrate, a gate oxide layer, a gate bus layer, an inter-layer dielectric layer and a metal bus layer. The substrate has a trench structure therein. The...
US20120153380 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE  
A method for fabricating a semiconductor device includes forming a first trench by etching a substrate, forming first spacers on sidewalls of the first trench, forming a second trench by etching...
US20090078980 Method for Producing an Integrated Circuit, Integrated Circuit, DRAM Device and Memory Module  
A method for producing an integrated circuit is disclosed. The integrated circuit includes an insulating material and a semiconducting material adjacent the insulating material. The semiconducting...
US20100171171 Trench mosfet device with low gate charge and the manfacturing method thereof  
A method for manufacturing trench MOSFET device with low gate charge includes the steps of providing a substrate of first conductivity type; forming an epitaxial layer of first conductivity type...
US20100078716 Semiconductor component and method for producing a semiconductor component  
A semiconductor component comprises a semiconductor body with at least one protective trench in the semiconductor body. An insulation layer is situated at least at the bottom of the protective...
US20130307050 NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME  
A nonvolatile memory device includes: a channel layer protruding perpendicular to a surface of a substrate; a tunnel insulation layer formed on a surface of the channel layer; a stack structure,...
US20070200169 Gate electrode of semiconductor device and method for fabricating the same  
A gate electrode of a semiconductor device according to the present invention includes a substrate, a bulb type recess with an upper recess and a bottom recess, the bottom recess formed in a round...
US20080111208 Semiconductor devices having a gate electrode and methods of fabricating the same  
An integrated circuit device includes an integrated circuit substrate and a first gate pattern on the substrate. A non-conductive barrier layer pattern is on the first gate pattern. The barrier...
US20120098056 TRENCH DEVICE STRUCTURE AND FABRICATION  
A vertical-current-flow device includes a trench which includes an insulated gate and which extends down into first-conductivity-type semiconductor material. A phosphosilicate glass layer is...
US20150145057 INTEGRATED MULTIPLE GATE LENGTH SEMICONDUCTOR DEVICE INCLUDING SELF-ALIGNED CONTACTS  
A multi-channel semiconductor device includes a first and second gate channels formed in a semiconductor substrate. The first gate channel has a first length and the second gate channel has a...
US20140185355 Systems and Devices Including Multi-Transistor Cells and Methods of Using, Making, and Operating the Same  
A device may include a first transistor, a second transistor, and a data element. The first transistor may have a column gate and a channel, and the second transistor may include a row gate that...
US20090127635 Transistor including an active region and methods for fabricating the same  
A transistor including an active region and methods thereof. The active region may include corners with at least one of a rectangular, curved or rounded shape. The methods may include...
US20080164517 SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME  
A semiconductor device according to the present invention includes: a first trench that is formed in a semiconductor substrate; a gate oxide film that is formed on a surface of the first trench;...
US20090163011 MASK LAYOUT AND METHOD FOR FORMING VERTICAL CHANNEL TRANSISTOR IN SEMICONDUCTOR DEVICE USING THE SAME  
A method for forming a vertical channel transistor in a semiconductor memory device includes: forming a plurality of pillars over a substrate so that the plurality of pillars are arranged in a...
US20080012067 Transistor and memory cell array and methods of making the same  
A method of forming a transistor involves defining an active area by defining isolation trenches, the isolation trenches being adjacent to the active area, and forming a gate electrode after...
US20140295658 SEMICONDUCTOR DEVICE COMPRISING TRENCH GATE AND BURIED SOURCE ELECTRODES  
A semiconductor device includes a semiconductor substrate, a trench, a buried insulated source electrode arranged in a bottom portion of the trench, a first gate electrode and a second gate...
US20140264486 METHODS OF FORMING A SEMICONDUCTOR DEVICE WITH A PROTECTED GATE CAP LAYER AND THE RESULTING DEVICE  
One method includes forming a recessed gate/spacer structure that partially defines a spacer/gate cap recess, forming a gate cap layer in the spacer/gate cap recess, forming a gate cap protection...
US20070262424 METHODS FOR FORMING THROUGH-WAFER INTERCONNECTS AND DEVICES AND SYSTEMS HAVING AT LEAST ONE DAM STRUCTURE  
A method for forming through-wafer interconnects (TWI) in a substrate. Blind holes are formed from a surface, sidewalls thereof passivated and coated with a conductive material. A vent hole is...
US20090032865 SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT  
A semiconductor component having differently structured cell regions, and a method for producing it. For this purpose, the semiconductor component includes a semiconductor body. A first electrode...
US20090101971 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DATA PROCESSING SYSTEM  
A bottom of a gate trench has a first bottom relatively far from an STI and a second bottom relatively near from the STI A portion, in an active region, configuring the second bottom of the gate...
US20130171801 SEMICONDUCTOR DEVICES HAVING NITRIDED GATE INSULATING LAYER AND METHODS OF FABRICATING THE SAME  
Semiconductor devices, and methods of fabricating the same, include forming device isolation regions in a substrate to define active regions, forming gate trenches in the substrate to expose the...
US20110143508 METHOD OF FABRICATING VERTICAL CHANNEL TRANSISTOR  
A method of fabricating a vertical channel transistor includes: forming a line type active pattern on a substrate so as to extend in a first horizontal direction; forming a vertical channel...
US20110306194 FABRICATION METHOD OF SELF-ALIGNED TRENCHED POWER SEMICONDUCTOR STRUCTURE  
A fabrication method of a self-aligned power semiconductor structure is provided. Firstly, a trenched polysilicon gate is formed in a silicon substrate. Then, a self-aligned polysilicon extending...
US20140124875 Metal Gate Structure with Device Gain and Yield Improvement  
The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate and a gate stack disposed on the semiconductor substrate. The gate stack...
US20070155179 METHOD TO DEFINE A PATTERN HAVING SHRUNK CRITICAL DIMENSION  
The present invention provides a method for fabricating a trench opening in a semiconductor substrate. The patterned amorphous silicon layer is completely oxidized to form a silicon oxide mask...
US20090321817 Structure and Method for Forming a Shielded Gate Trench FET with an Inter-Electrode Dielectric Having a Nitride Layer Therein  
A shielded gate field effect transistor (FET) comprises a plurality of trenches extending into a semiconductor region. A shield electrode is disposed in a bottom portion of each trench, and a gate...
US20130037879 VERTICAL DEVICES AND METHODS OF FORMING  
Vertical devices and methods of forming the same are provided. One example method of forming a vertical device can include forming a trench in a semiconductor structure, and partially filling the...
US20080029810 METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING BURIED GATES AND RELATED SEMICONDUCTOR DEVICES  
Methods of fabricating semiconductor devices capable of maintaining a liner on both sidewalls of an active region overlapping a gate are provided. An isolation trench defining an active region is...
US20140231905 SEMICONDUCTOR DEVICE  
A trench MOSFET including: an epitaxial layer; a body region on the epitaxial layer, the body region and the epitaxial layer forming a first interface; a trench; a trench bottom oxide in the...
US20100001338 Non-volatile semiconductor memory device, and manufacture method for non-volatile semiconductor memory device  
A non-volatile semiconductor memory device includes a semiconductor substrate, a charge-storage layer that is formed above the semiconductor substrate, a first gate that is formed above the...

Matches 101 - 150 out of 438 < 1 2 3 4 5 6 7 8 9 >