Matches 51 - 100 out of 438 < 1 2 3 4 5 6 7 8 9 >


Match Document Document Title
US20060273385 Trenched MOSFET device with contact trenches filled with tungsten plugs  
A trenched semiconductor power device that includes a trenched gate disposed in an extended continuous trench surrounding a plurality of transistor cells in an active cell area and extending as...
US20150021694 INTEGRATED CIRCUITS HAVING REPLACEMENT METAL GATES WITH IMPROVED THRESHOLD VOLTAGE PERFORMANCE AND METHODS FOR FABRICATING THE SAME  
Integrated circuits having replacement metal gates with improved threshold voltage performance and methods for fabricating such integrated circuits are provided. A method includes providing a...
US20130093008 TRENCH MOSFET DEVICE AND METHOD FOR FABRICATING THE SAME  
A trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) device is disclosed. The trench MOSFET device includes a substrate, a body region, a source region, a dielectric layer, a metal...
US20060273382 High density trench MOSFET with low gate resistance and reduced source contact space  
A trenched metal oxide semiconductor field effect transistor (MOSFET) device that includes gate contact trenches and source contact trenches opened through oxide insulation layers into the gate...
US20110081773 Method for Forming a Shielded Gate Trench FET  
A method for forming a shielded gate field effect transistor (FET) includes forming a plurality of trenches in a semiconductor region and forming a shield electrode in a bottom portion of each...
US20140151786 NON-VOLATILE GRAPHENE NANOMECHANICAL SWITCH  
Non-volatile switches and methods for making the same include a gate material formed in a recess of a substrate; a flexible conductive element disposed above the gate material, separated from the...
US20100096693 SEMICONDUCTOR DEVICE WITH VERTICAL GATE AND METHOD FOR FABRICATING THE SAME  
A semiconductor device includes a substrate; a plurality of active pillars formed over the substrate; bulb-type trenches, each of the bulb-type trenches formed inside the substrate between the...
US20120037979 METHOD FOR PRODUCING AN INSULATION LAYER BETWEEN TWO ELECTRODES  
Method for producing an insulation layer between a first electrode and a second electrode in a trench of a semiconductor body, wherein the method comprises the following features: providing a...
US20100155838 TRENCH TYPE MOSFET DEVICE AND METHOD OF MANUFACTURING THE SAME  
A trench type Metal Oxide Silicon Field Effect Transistor (MOSFET) device and a method of manufacturing a trench type MOSFET device. A trench type MOSFET device may include a wide-trench source...
US20130228860 SHIELDED GATE TRENCH MOS WITH IMPROVED SOURCE PICKUP LAYOUT  
A method for fabricating a semiconductor device includes forming a plurality of trenches using a first mask. The trenches include source pickup trenches located in outside a termination area and...
US20110220990 SHIELDED GATE TRENCH MOS WITH IMPROVED SOURCE PICKUP LAYOUT  
A method for fabricating a semiconductor device includes forming a plurality of trenches using a first mask. The trenches include source pickup trenches located in outside a termination area and...
US20120329261 MANUFACTURING METHOD FOR METAL GATE  
A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor...
US20120217578 METHOD AND SYSTEM FOR METAL GATE FORMATION WITH WIDER METAL GATE FILL MARGIN  
A method includes providing a semiconductor substrate having a gate trench and depositing a metal layer, using a physical vapor deposition (PVD) process, over the substrate to partially fill the...
US20110089484 METHOD AND SYSTEM FOR METAL GATE FORMATION WITH WIDER METAL GATE FILL MARGIN  
A method includes providing a semiconductor substrate having a gate trench and depositing a metal layer, using a physical vapor deposition (PVD) process, over the substrate to partially fill the...
US20100308400 Semiconductor Power Switches Having Trench Gates  
A method of fabricating a trench device includes forming a first trench and forming a hardmask layer on sidewalls of the trench. A second trench may be etched narrower than the first trench, into...
US20080026552 METHOD OF ENHANCING LITHOGRAPHY CAPABILITIES DURING GATE FORMATION IN SEMICONDUCTORS HAVING A PRONOUNCED SURFACE TOPOGRAPHY  
In a mesa isolation configuration for forming a transistor on a semiconductor island, an additional planarization step is performed to enhance the uniformity of the gate patterning process. In...
US20080081404 Recessed STI for wide transistors  
A method of manufacturing a semiconductor device having shallow trench isolation includes steps of forming a hard mask layer on the substrate surface, etching a trench through the hard mask,...
US20140004692 FINFET STRUCTURE WITH MULTIPLE WORKFUNCTIONS AND METHOD FOR FABRICATING THE SAME  
A method for fabricating a multiple-workfunction FinFET structure includes depositing a first workfunction material in a layer in a plurality of trenches of the FinFET structure and etching the...
US20060141712 Method for manufacturing PMOSFET  
A method for manufacturing a PMOSFET uses a trench-type gate structure only in a PMOSFET region of a peripheral circuit, except for a cell, to overcome the shortcomings of a MOSFET caused by...
US20110092062 Transistor Gate Forming Methods and Transistor Structures  
A transistor gate forming method includes forming a metal layer within a line opening and forming a fill layer within the opening over the metal layer. The fill layer is substantially selectively...
US20080203455 SEMICONDUCTOR DEVICE EMPLOYING TRANSISTOR HAVING RECESSED CHANNEL REGION AND METHOD OF FABRICATING THE SAME  
A semiconductor device employing a transistor having a recessed channel region and a method of fabricating the same is disclosed. A semiconductor substrate has an active region. A trench structure...
US20120156862 HIGH EFFICIENCY RECTIFIER  
A method for forming a rectifier device is provided. The method forms a first layer on a substrate, a second layer is formed on the first layer and a photoresist layer is deposited on the second...
US20140370700 METHOD OF FORMING POLYSILICON IN A TRENCH  
Disclosed herein are methods for forming polysilicon in a trench. The sacrificial layer having a high etching rate is applied on the surface of polysilicon after polysilicon is formed on the...
US20080079093 Transistor including bulb-type recess channel and method for fabricating the same  
A method for fabricating a transistor including a bulb-type recess channel includes forming a bulb-type recess pattern in a substrate, forming a gate insulating layer over the substrate and the...
US20150263010 Si RECESS METHOD IN HKMG REPLACEMENT GATE TECHNOLOGY  
The present disclosure relates to a method of embedding an ESF3 memory in a HKMG integrated circuit that utilizes a replacement gate technology. The ESF3 memory is formed over a recessed substrate...
US20110183507 Peripheral Gate Stacks and Recessed Array Gates  
Methods are provided for simultaneously processing transistors in two different regions of an integrated circuit. Planar transistors are provided in a logic region while recessed access devices...
US20130157452 SEMICONDUCTOR DEVICE INCLUDING POLYSILICON RESISTOR AND METAL GATE RESISTOR AND METHODS OF FABRICATING THEREOF  
A described method includes providing a semiconductor substrate. A first gate structure is formed on the semiconductor substrate and a sacrificial gate structure formed adjacent the first gate...
US20110111583 METHOD OF REDUCING COUPLING BETWEEN FLOATING GATES IN NONVOLATILE MEMORY  
A nonvolatile memory array includes floating gates that have an inverted-T shape in cross section along a plane that is perpendicular to the direction along which floating cells are connected...
US20150054067 Integrated Circuitry Comprising Nonvolatile Memory Cells And Methods Of Forming A Nonvolatile Memory Cell  
A method of forming a gate construction of a recessed access device includes forming a pair of sidewall spacers laterally over opposing sidewalls of a gate dielectric and elevationally over first...
US20120326229 Trench Transistor and Manufacturing Method of the Trench Transistor  
A semiconductor device includes a semiconductor body including a first surface and a second surface. The semiconductor device further includes a trench structure extending into the semiconductor...
US20130168765 TRENCH DMOS DEVICE WITH IMPROVED TERMINATION STRUCTURE FOR HIGH VOLTAGE APPLICATIONS  
A termination structure is provided for a semiconductor device. The termination structure includes a semiconductor substrate having an active region and a termination region. A termination trench...
US20110212586 Method for Forming Shielded Gate Field Effect Transistors  
A method for forming a field effect transistor includes forming a trench in a semiconductor region and forming a dielectric layer lining lower sidewalls and bottom surface of the trench. After...
US20060273380 Source contact and metal scheme for high density trench MOSFET  
A trenched metal oxide semiconductor field effect transistor (MOSFET) cell that includes a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on...
US20120088359 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE  
Example embodiments relate to a method for manufacturing a semiconductor device, wherein a metal gate electrode therein may be formed without a void in a lower portion of the metal gate electrode....
US20080099835 Exposure Mask and Method for Forming A Gate Using the Same  
An exposure mask and a method for forming a gate using the same are provided. A recess is formed by using a recess exposure mask with an isolated light transmitting pattern so that the recess may...
US20150214061 TRENCH FIELD-EFFECT DEVICE AND METHOD OF FABRICATING SAME  
The present invention provides a method of fabricating a trench field-effect device. The method includes: providing a substrate including an epitaxial layer formed on a semiconductor substrate of...
US20100230747 PROCESS FOR MANUFACTURING A POWER DEVICE WITH A TRENCH-GATE STRUCTURE AND CORRESPONDING DEVICE  
An embodiment for realizing a power device with trench-gate structure integrated on a semiconductor substrate, and including etching the semiconductor substrate to make a first trench having first...
US20130140630 TRENCH SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF  
A trench Schottky diode and a manufacturing method thereof are provided. The manufacturing method includes the following steps. Firstly, a semiconductor substrate is provided. A multi-trench...
US20090206443 DEVICES INCLUDING FIN TRANSISTORS ROBUST TO GATE SHORTS AND METHODS OF MAKING THE SAME  
Disclosed are methods, systems and devices, including a method that includes the acts of etching an inter-row trench in a substrate, substantially or entirely filling the inter-row trench with a...
US20100084705 SEMICONDUCTOR DEVICES HAVING REDUCED GATE-DRAIN CAPACITANCE AND METHODS FOR THE FABRICATION THEREOF  
Embodiments of a method for fabricating a semiconductor device having a reduced gate-drain capacitance are provided. In one embodiment, the method includes the steps of etching a trench in a...
US20140110777 TRENCH GATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND FABRICATING METHOD THEREOF  
A trench gate metal oxide semiconductor field effect transistor includes a substrate and a gate. The substrate has a trench. The trench is extended downwardly from a surface of the substrate. The...
US20120235229 INTER-POLY DIELECTRIC IN A SHIELDED GATE MOSFET DEVICE  
In one general aspect, an apparatus can include a shield dielectric disposed within a trench aligned along an axis within an epitaxial layer of a semiconductor, and a shield electrode disposed...
US20120021577 GATE TRENCH CONDUCTOR FILL  
Semiconductor devices and methods for making such devices are described. The semiconductor devices contain a substrate with a trench in an upper portion thereof, a gate insulating layer on a...
US20140008722 VERTICAL-GATE MOS TRANSISTOR WITH FIELD-PLATE ACCESS  
An embodiment of a vertical-gate transistor disposed on a die includes a first substrate portion of a first conductivity and a second substrate portion of a second conductivity. The die includes...
US20060148178 Method for producing a vertical transistor  
The present invention relates to a method for producing a vertical transistor, and to a vertical transistor. A sacrificial gate oxide and a sacrificial gate electrode are used during the...
US20080081449 Method for fabricating semiconductor device including recess gate  
A method for fabricating a semiconductor device includes etching a substrate to form a first trench pattern, forming spacers over sidewalls of the first trench pattern, etching a bottom portion of...
US20130023096 SINGLE CRYSTAL U-MOS GATES USING MICROWAVE CRYSTAL REGROWTH  
Semiconductor devices and methods for making such devices are described. The UMOS semiconductor devices contain single-crystal gates that have been re-grown or formed at low temperature using...
US20100044783 INTEGRATED CIRCUIT METAL GATE STRUCTURE AND METHOD OF FABRICATION  
A method is provided for forming a metal gate using a gate last process. A trench is formed on a substrate. The profile of the trench is modified to provide a first width at the aperture of the...
US20070281455 Semiconductor device with bulb recess and saddle fin and method of manufacturing the same  
A semiconductor device includes an active region, a bulb recess with a certain depth formed in a channel-forming region of the active region, a device isolation structure encompassing the active...
US20120309177 TRENCHED POWER SEMICONDUCTOR STRUCTURE WITH REDUCED GATE IMPEDANCE AND FABRICATION METHOD THEREOF  
A trenched power semiconductor structure with reduced gate impedance and a fabrication method thereof is provided. The trenched power semiconductor structure has a silicon base, a gate trench, a...

Matches 51 - 100 out of 438 < 1 2 3 4 5 6 7 8 9 >