Matches 1 - 50 out of 85 1 2 >


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US20090311852 BORON-DOPED DIAMOND SEMICONDUCTOR  
First and second synthetic diamond regions are doped with boron. The second synthetic diamond region is doped with boron to a greater degree than the first synthetic diamond region, and in...
US20080191304 Schottky Diode Structure with Silicon Mesa and Junction Barrier Schottky Wells  
A power diode having a silicon mesa atop the drift region includes a first contact positioned on the silicon mesa. The silicon mesa is highly doped p-type or n-type, and the anode may be formed on...
US20090212331 SEMICONDUCTOR COMPONENT WITH SCHOTTKY ZONES IN A DRIFT ZONE  
A description is given of a semiconductor component comprising a drift zone of a first conduction type and at least one Schottky metal zone arranged in the drift zone, and of a method for...
US20050045982 Semiconductor device with novel junction termination  
A semiconductor device (10, 100) comprising a Schottky charge transfer junction and a novel junction termination design. The device provides improved breakdown performance and reliability at...
US20130241344 FUEL-FREE NANOWIRE MOTORS  
Techniques and systems are disclosed for locomoting fuel-free nanomotors in a fluid. In one aspect of the disclosed technology, a system for locomoting fuel-free nanomotors can include an...
US20130001699 TRENCH JUNCTION BARRIER SCHOTTKY STRUCTURE WITH ENHANCED CONTACT AREA INTEGRATED WITH A MOSFET  
An object of this invention is to provide a Schottky diode structure to increase the contact area at a Schottky junction between the Schottky Barrier metal and a semiconductor substrate. The...
US20130341705 SCHOTTKY DIODE INTEGRATED INTO LDMOS  
In an LDMOS device leakage and forward conduction parameters are adjusted by integrating an Schottky diode into the LDMOS by substituting one or more n+ source regions with Schottky diodes.
US20080203517 SEMICONDUCTOR COMPONENT HAVING RECTIFYING JUNCTIONS AND METHOD FOR PRODUCING THE SAME  
A semiconductor component is proposed which has a semiconductor body having a first semiconductor zone of the first conduction type, at least one first rectifying junction with respect to the...
US20130217216 Unguarded Schottky Barrier Diodes with Dielectric Underetch at Silicide Interface  
One embodiment of the invention relates to an unguarded Schottky barrier diode. The diode includes a cathode that has a recessed region and a dielectric interface surface that laterally extends...
US20090194838 COSI2 SCHOTTKY DIODE INTEGRATION IN BISMOS PROCESS  
Cobalt silicide (CoSi2) Schottky diodes fabricated per the current art suffer from excess leakage currents in reverse bias. In this invention, an floating p-type region encircles each anode of a...
US20120007097 SCHOTTKY DIODE WITH COMBINED FIELD PLATE AND GUARD RING  
A Schottky diode comprising a merged guard ring and field plate defining a Schottky contact region is provided. A Schottky metal is formed over at least partially over the Schottky contact region...
US20120056294 SCHOTTKY DIODES WITH DUAL GUARD RING REGIONS AND ASSOCIATED METHODS  
The present invention discloses a Schottky diode. The Schottky diode comprises a cathode region, an anode region and a guard ring region. The anode region may comprise a metal Schottky contact....
US20130292695 SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING SCHOTTKY BARRIER DIODE  
A method for manufacturing a Schottky barrier diode includes the following steps. First, a GaN substrate is prepared. A GaN layer is formed on the GaN substrate. A Schottky electrode including a...
US20130240980 Schottky diode integrated into LDMOS  
In an LDMOS device leakage and forward conduction parameters are adjusted by integrating an Schottky diode into the LDMOS by blocking the formation of one or more n+ source regions and providing a...
US20130181319 Trench Schottky Barrier Diode and Manufacturing Method Thereof  
The present invention discloses a trench Schottky barrier diode (SBD) and a manufacturing method thereof. The trench SBD includes: an epitaxial layer, formed on a substrate; multiple mesas,...
US20090102007 Lateral Power Diode with Self-Biasing Electrode  
A semiconductor diode includes a drift region of a first conductivity type and an anode region of a second conductivity type in the drift region such that the anode region and the drift region...
US20110095361 MULTIPLE LAYER BARRIER METAL FOR DEVICE COMPONENT FORMED IN CONTACT TRENCH  
A semiconductor device formed on a semiconductor substrate may include a component formed in a contact trench located in an active cell region. The component may comprise a barrier metal deposited...
US20050133829 High-frequency semiconductor device  
A high-frequency semiconductor device includes: a first cell which includes of gate electrodes on a surface of an epitaxial layer of a substrate, drain electrodes and source electrodes alternately...
US20100224952 SCHOTTKY BARRIER DIODE AND METHOD OF PRODUCING THE SAME  
A Schottky barrier diode includes an epitaxial growth layer disposed on a substrate and having a mesa portion, and a Schottky electrode disposed on the mesa portion, wherein a distance between an...
US20070287276 UNGUARDED SCHOTTKY BARRIER DIODES  
One embodiment of the invention relates to an unguarded Schottky barrier diode. The diode includes a cathode that has a recessed region and a dielectric interface surface that laterally extends...
US20120187521 SCHOTTKY DIODE HAVING A SUBSTRATE P-N DIODE  
A semiconductor device has a trench junction barrier Schottky diode that includes an integrated substrate p-n diode (TJBS-Sub-PN) as a clamping element, the trench junction barrier Schottky diode...
US20130009238 ENHANCING SCHOTTKY BREAKDOWN VOLTAGE (BV) WITHOUT AFFECTING AN INTEGRATED MOSFET-SCHOTTKY DEVICE LAYOUT  
This invention discloses a semiconductor power device that includes an active cell area having a plurality of power transistor cells. Each of said power transistor cells has a planar Schottky...
US20090294859 Trench MOSFET with embedded junction barrier Schottky diode  
A trenched semiconductor power device that includes a plurality of trenched gates surrounded by source regions near a top surface of a semiconductor substrate encompassed in body regions. Each of...
US20080246096 Semiconductor device including schottky barrier diode and method of manufacturing the same  
A semiconductor device includes a substrate, a plurality of first columns having a first conductivity type, a plurality of second columns having a second conductivity type, a first electrode, and...
US20150200250 TRENCH MOS DEVICE HAVING A TERMINATION STRUCTURE WITH MULTIPLE FIELD-RELAXATION TRENCHES FOR HIGH VOLTAGE APPLICATIONS  
A termination structure for a semiconductor device includes a semiconductor substrate having an active region and a termination region. Two or more trench cells are located in the termination...
US20140183439 CURRENT SELECTOR FOR NON-VOLATILE MEMORY IN A CROSS BAR ARRAY BASED ON DEFECT AND BAND ENGINEERING METAL-DIELECTRIC-METAL STACKS  
Selector devices that can be suitable for memory device applications can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents...
US20140349470 SCHOTTKY DIODE AND METHOD FOR FABRICATING THE SAME  
A Schottky diode includes a deep well formed in a substrate, an isolation layer formed in the substrate, a first conductive type guard ring formed in the deep well along an outer sidewall of the...
US20120115319 CONTACT PAD  
The present disclosure relates to forming multi-layered contact pads for a semiconductor device, wherein the various layers of the contact pad are formed using one or more thin-film deposition...
US20070197008 MIRROR-LIKE INPUT KEY  
A mirror-like key (40) comprises a base portion (46), a sputtered layer (44) and a lightproof printed layer (42) with a light-pervious label (422). The base portion comprises an upper surface...
US20130115758 METHOD FOR MANUFACTURING SILICON CARBIDE SCHOTTKY BARRIER DIODE  
The present invention provides a method for manufacturing a silicon carbide Schottky barrier diode. In the method, an n− epitaxial layer is deposited on an n+ substrate. A sacrificial oxide film...
US20130069028 SELECT DEVICES FOR MEMORY CELL APPLICATIONS  
Select devices for memory cell applications and methods of forming the same are described herein. As an example, one or more non-ohmic select devices can include at least two tunnel barrier...
US20090032897 Semiconductor Device and Method for Its Manufacture  
In semiconductor devices and methods for their manufacture, the semiconductor devices are arranged as a trench-Schottky-barrier-Schottky diode having a pn diode as a clamping element (TSBS-pn),...
US20090179187 3-D AND 3-D SCHOTTKY DIODE FOR CROSS-POINT, VARIABLE-RESISTANCE MATERIAL MEMORIES, PROCESSES OF FORMING SAME, AND METHODS OF USING SAME  
A variable-resistance material memory (VRMM) device includes a container conductor disposed over an epitaxial semiconductive prominence that is coupled to a VRMM. A VRMM device may also include a...
US20140061848 Schottky Isolated NMOS for Latch-Up Prevention  
An integrated circuit structure includes a substrate, a semiconductor device supported by the substrate, and a guard ring structure disposed around the semiconductor device, the guard ring...
US20120205772 TRENCH SCHOTTKY DIODE AND MANUFACTURING METHOD THEREOF  
A trench Schottky diode and a manufacturing method thereof are provided. A plurality of trenches are formed in Asemiconductor substrate. A plurality of doped regions are formed in the...
US20140021827 PRIMARY VOLTAIC SOURCES INCLUDING NANOFIBER SCHOTTKY BARRIER ARRAYS AND METHODS OF FORMING SAME  
Primary voltaic sources include nanofiber Schottky barrier arrays and a radioactive source including at least one radioactive element configured to emit radioactive particles. The arrays have a...
US20120199937 INTEGRATED CIRCUIT  
An integrated circuit including a Schottky diode, and a method of making the same. The diode includes an active region bordered by an isolation region in a semiconductor substrate of the...
US20060292839 Contacts fabric using heterostructure of metal/semiconductor nanorods and fabrication method thereof  
Provided are a contact fabric using a heterostructure of metal/semiconductor nanorods and a method of manufacturing the same. An ohmic contact fabric having a low contact resistance or a Schottky...
US20060076639 Schottky diodes and methods of making the same  
In one aspect, a Schottky diode includes a semiconductor material, and a metal material forming a Schottky barrier junction with the semiconductor material, wherein a cavity having a lateral...
US20080217725 SCHOTTKY DIODE STRUCTURE WITH MULTI-PORTIONED GUARD RING AND METHOD OF MANUFACTURE  
In one embodiment, a semiconductor structure comprises a multi-portioned guard ring that includes a first portion and a second portion formed in a region of semiconductor material. A conductive...
US20090315036 SEMICONDUCTOR DEVICES INCLUDING SCHOTTKY DIODES HAVING DOPED REGIONS ARRANGED AS ISLANDS AND METHODS OF FABRICATING SAME  
A semiconductor device according to some embodiments includes a semiconductor layer having a first conductivity type and a surface in which an active region of the semiconductor device is defined....
US20130277791 SCHOTTKY DIODE WITH OPPOSITE-POLARITY SCHOTTKY DIODE FIELD GUARD RING  
In one general aspect, an apparatus includes a metal or metal silicide contact layer disposed on an n-well region of a semiconductor substrate to form a primary Schottky diode. The apparatus...
US20110287616 Bottom anode schottky diode structure and method  
This invention discloses a bottom-anode Schottky (BAS) diode that includes an anode electrode disposed on a bottom surface of a semiconductor substrate. The bottom-anode Schottky diode further...
US20070015348 Crosspoint resistor memory device with back-to-back Schottky diodes  
A metal/semiconductor/metal (MSM) back-to-back Schottky diode, a resistance memory device using the MSM diode, and associated fabrication processes are provided. The method includes: providing a...
US20120133016 LATERAL POWER DIODE WITH SELF-BIASING ELECTRODE  
A schottky diode includes a drift region of a first conductivity type and a lightly doped silicon region of the first conductivity type in the drift region. A conductor layer is over and in...
US20130221476 DEVICES AND METHODS RELATED TO ELECTROSTATIC DISCHARGE PROTECTION BENIGN TO RADIO-FREQUENCY OPERATION  
Disclosed are systems, devices and methods for providing electrostatic discharge (ESD) protection for integrated circuits. In some implementations, first and second conductors with ohmic contacts...
US20100279483 LATERAL PASSIVE DEVICE HAVING DUAL ANNULAR ELECTRODES  
A lateral passive device is disclosed including a dual annular electrode. The annular electrodes form an anode and a cathode. The annular electrodes allow anode and cathode series resistances to...
US20100117488 PIEZOELECTRIC AND SEMICONDUCTING COUPLED NANOGENERATORS  
An electrical generator includes a substrate, a semiconductor piezoelectric structure having a first end and an opposite second end disposed adjacent to the substrate, a first conductive contact...
US20120122307 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES  
A method of manufacturing a semiconductor device is disclosed. The method includes forming a first trench and a second trench in an n-type substrate surface, the first trenches being spaced apart...
US20130288449 SEMICONDUCTOR DIODE AND METHOD OF MANUFACTURE  
A diode (200) is disclosed having improved efficiency, smaller form factor, and reduced reverse biased leakage current. Schottky diodes (212) are formed on the sidewalls (210) of a mesa region...

Matches 1 - 50 out of 85 1 2 >