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US20120012958 |
CHARGED PARTICLE COLLECTOR FOR A CMOS IMAGER
Charged particle sensing devices and methods of forming charged particle sensing devices are provided. The charged particle sensing device includes a source of charged particles, a plurality of...
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US20080251868 |
Standard component for calibration and electron-beam system using the same
The invention provides a standard component for calibration that enables a calibration position to be easily specified in order to calibrate accurately a scale factor in the electron-beam system,...
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US20120149142 |
Betavoltaic battery with a shallow junction and a method for making same
This is a novel SiC betavoltaic device (as an example) which comprises one or more “ultra shallow” P+ N− SiC junctions and a pillared or planar device surface (as an example). Junctions are deeme...
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US20090302231 |
NON-STREAMING HIGH-EFFICIENCY PERFORATED SEMICONDUCTOR NEUTRON DETECTORS, METHODS OF MAKING SAME AND MEASURING WAND AND DETECTOR MODULES UTILZING SAME
Non-streaming high-efficiency perforated semiconductor neutron detectors, method of making same and measuring wands and detector modules utilizing same are disclosed. The detectors have improved...
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US20110192984 |
METHOD AND EQUIPMENT FOR PRODUCING DRIFT DETECTORS
Silicon drift detectors are produced for location and energy measurement as well as spectroscopic applications by depositing a single high quality dielectric film followed by deposition of at least...
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US20090302226 |
SOLID-STATE NEUTRON AND ALPHA PARTICLES DETECTOR AND METHODS FOR MANUFACTURING AND USE THEREOF
A solid-state detector for detection of neutron and alpha particles detector and methods for manufacturing and use thereof are described. The detector has an active region formed of a...
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US20110278464 |
RADIATION DETECTOR AND FABRICATION PROCESS
A monolithic integrated radiation detector includes a photodetector and a scintillator deposited directly on the photodetector. Preferably the photodetector is silicon and the scintillator is a...
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US20080318357 |
ALPHA VOLTAIC BATTERIES AND METHODS THEREOF
An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of...
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US20050170270 |
Composition for forming wiring protective film and uses thereof
A composition for forming a film for protecting wiring which in one aspect includes a polyimide precursor, a compound having at least two photopolymerizable groups, and a photopolymerization...
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US20130082264 |
PHOTODETECTOR HAVING IMPROVED QUANTUM EFFICIENCY
The present approach involves a radiation detector module with increased quantum efficiency and methods of fabricating the radiation detector module. The module includes a scintillator substrate...
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US20070072332 |
Semiconductor radiation detectors and method for fabrication thereof
The invention relates to a method for fabricating semiconductor radiation detectors comprising a bulk of a first conductivity type for detecting radiation with further semiconductor layers of a...
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US20110169116 |
Radiation Detector
The invention discloses a process for manufacturing a radiation detector for detecting e.g. 200 eV electrons. This makes the detector suited for e.g. use in an Scanning Electron Microscope. The...
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US20130049147 |
WAFER STRUCTURE FOR ELECTRONIC INTEGRATED CIRCUIT MANUFACTURING
A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used...
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US20110006204 |
HIGH DENSITY FARADAY CUP ARRAY OR OTHER OPEN TRENCH STRUCTURES AND METHOD OF MANUFACTURE THEREOF
A detector array and method for making the detector array. The detector array includes a substrate including a plurality of trenches formed therein, and a plurality of collectors electrically...
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US20120161575 |
STACK-TYPE BETA BATTERY GENERATING CURRENT FROM BETA SOURCE AND METHOD OF MANUFACTURING THE SAME
Provided are a stack-type beta battery generating a current from a beta source and a method of manufacturing the same. The method includes forming an oxide mask in a predetermined pattern on a...
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US20110253900 |
LITHOGRAPHY SYSTEM, SENSOR, CONVERTER ELEMENT AND METHOD OF MANUFACTURE
Charged particle beamlet lithography system for transferring a pattern to a surface of a target comprising a sensor for determining one or more characteristics of one or more charged particle...
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US20080290433 |
Monolithic nuclear event detector and method of manufacture
A PIN diode-based monolithic Nuclear Event Detector and method of manufacturing same for use in detecting a desired level of gamma radiation, in which a PIN diode is integrated with signal...
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US20120122260 |
ARRAY OF ALPHA PARTICLE SENSORS
An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a...
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US20110079728 |
RADIATION DETECTOR, METHOD OF MANUFACTURING A RADIATION DETECTOR AND USE OF THE DETECTOR FOR MEASURING RADIATION
A radiation detector is disclosed. The detector has an entrance opening etched through a low-resistivity volume of silicon, a sensitive volume of high-resistivity silicon for converting the...
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US20120161266 |
METHODS AND SYSTEMS OF ISOLATING SEGMENTED RADIATION DETECTORS USING ALUMINA
Radiation detectors can be made of n-type or p-type silicon. All segmented detectors on p-type silicon and double-sided detectors on n-type silicon require an “inter-segment isolation” to sep...
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US20120187305 |
MICROCHANNEL PLATE DETECTOR AND METHODS FOR THEIR FABRICATION
A multi-component tunable resistive coating and methods of depositing the coating on the surfaces of a microchannel plate (MCP) detector. The resistive coating composed of a plurality of...
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US20110287567 |
Betavoltaic battery with a shallow junction and a method for making same
This is a novel SiC betavoltaic device (as an example) which comprises one or more “ultra shallow” P+N− SiC junctions and a pillared or planar device surface (as an example). Junctions are deeme...
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US20110086456 |
Betavoltaic battery with a shallow junction and a method for making same
This is a novel SiC betavoltaic device (as an example) which comprises one or more “ultra shallow” P+N− SiC junctions and a pillared or planar device surface (as an example). Junctions are deeme...
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US20120043632 |
METHOD TO PLANARIZE THREE-DIMENSIONAL STRUCTURES TO ENABLE CONFORMAL ELECTRODES
Methods for fabricating three-dimentional PIN structures having conformal electrodes are provided, as well as the structures themselves. The structures include a first layer and an array of pillars...
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US20100155615 |
ROBUST RADIATION DETECTOR COMPRISING DIAMOND
A radiation detector comprises a substrate of diamond material and at least one electrode formed at a surface of the substrate. The electrode comprises electrically conductive material deposited in...
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US20120313196 |
3-D TRENCH ELECTRODE DETECTORS
A three-dimensional (3D) Trench detector and a method for fabricating the detector are disclosed. The 3D-Trench detector includes a bulk of semiconductor material that has first and second surfaces...
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US20110012216 |
Simplified Silicon Drift Detector and Wraparound Neutron Detector
A large area SDD detector having linear anodes surrounded by steering electrodes and having an oblong, circular, hexagonal, or rectangular shape. The detectors feature stop rings having a junction...
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US20100163738 |
RADIATION DETECTOR, LIGHT DETECTOR ARRANGEMENT, PRODUCTION METHOD AND IMAGING SYSTEM
An embodiment of the invention relates to a radiation detector which includes a plurality of radiation detector modules arranged adjacent to one another with in each case one scintillation element...
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US20110248176 |
DETECTION APPARATUS, METHOD OF MANUFACTURING THE SAME, AND DETECTION SYSTEM
A detection apparatus comprising a substrate; a switching element arranged over the substrate and including a plurality of electrodes; a conductive line arranged over the substrate and electrically...
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US20110121192 |
SCINTILLATOR, METHOD FOR MANUFACTURING SCINTILLATOR, AND RADIATION DETECTOR
A radiation detector is provided with a scintillator 2A containing a plurality of modified regions 21 and a plurality of photodetectors or a position-sensitive photodetector optically coupled to a...
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US20120186637 |
HIGH-ENERGY BETA-PARTICLE SOURCE FOR BETAVOLTAIC POWER CONVERTER
A power converter comprises a nuclear radiation emitter having a first side and a second side, wherein the nuclear radiation emitter comprises a radiation-emitting radioisotope, a plurality of...
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US20090302227 |
Neutron Detection Structure
A neutron detection structure built from a Silicon-On-Insulator memory cell includes a conversion layer for converting incident neutrons into emitted charged particles, a device layer for receiving...
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US20110284755 |
HIGH SENSITIVITY, SOLID STATE NEUTRON DETECTOR
An apparatus (200) for detecting slow or thermal neutrons (160) including an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus...
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US20120056287 |
DISPOSITIF DE DETECTION DE RAYONNEMENT ET PROCEDE DE FABRICATION
A method for manufacturing an ionizing radiation detection device having a block of a semiconductor material adapted to undergo local separations of charges between positive and negative charges...
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US20110233420 |
Neutron Detection
A neutron detector includes a microchannel plate having a structure that defines a plurality of microchannels, and layers of materials disposed on walls of the microchannels. The layers include a...
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US20110095386 |
Semiconductor sensor for detecting a light radiation
A semiconductor sensor for detecting a radiation including a sensitive layer obtained in an inactive layer adapted to detect a light radiation, a portion thereof having a metal layer attached...
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US20100264502 |
METHODS AND SYSTEMS OF CURVED RADIATION DETECTOR FABRICATION
Gray tone lithography is used to form curved silicon topographies for semiconductor based solid-state imaging devices. The imagers are curved to a specific curvature and shaped directly for the...
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US20100219494 |
Sub-mm Wireless Ionizing Radiation Detector
One embodiment of a radiation sensing capacitor is presented. The radiation sensing capacitor may include a silicon layer and an insulator layer coupled to the silicon layer. The radiation sensing...
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US20100213380 |
Neutron Detector with Gamma Ray Isolation
A silicon-on-insulator (SOI) neutron detector comprising a silicon-on-insulator structure, wherein the silicon-on-insulator structure consists of an active semiconductor layer, a buried layer, and...
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US20100164534 |
Radiation Sensor and Dosimeter
A semiconductor radiation sensor (100), comprising a substrate (102), a carrier material (104) mounted to the substrate (102), and a semiconductor detector (106) mounted to the carrier material...
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US20080246106 |
Integrated circuits having photonic interconnect layers and methods for fabricating same
Various embodiments of the present invention are directed to integrated circuits having photonic interconnect layers and methods for fabricating the integrated circuits. In one embodiment of the...
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US20130026544 |
FULLY DEPLETED SILICON ON INSULATOR NEUTRON DETECTOR
A method for forming a neutron detector comprises thinning a backside silicon substrate of a radiation detector; and forming a neutron converter layer on the thinned backside silicon substrate of...
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US20130026355 |
NEUTRON POROSITY MEASUREMENT DEVICES WITH SEMICONDUCTOR NEUTRON DETECTION CELLS AND METHODS
A neutron porosity measurement device adapted to receive a neutron source configured to emit neutrons having a first energy includes a segmented semiconductor detector located at a predetermined...
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US20120235260 |
METHOD FOR MANUFACTURING SOLID-STATE THERMAL NEUTRON DETECTORS WITH SIMULTANEOUS HIGH THERMAL NEUTRON DETECTION EFFICIENCY (>50%) AND NEUTRON TO GAMMA DISCRIMINATION (>1.0E4)
Methods for manufacturing solid-state thermal neutron detectors with simultaneous high thermal neutron detection efficiency (>50%) and neutron to gamma discrimination (>104) are provided. A...
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US20120012957 |
NEUTRON DETECTOR WITH WAFER-TO-WAFER BONDING
A method of manufacturing a neutron detector comprises forming a first wafer by at least forming an oxide layer on a substrate, forming an active semiconductor layer on the oxide layer, and forming...
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US20110291210 |
BETAVOLTAIC POWER CONVERTER DIE STACKING
A power converter comprises a first die and a second die. Each die comprises a semiconductor substrate comprising a junction for converting nuclear radiation particles to electrical energy, the...
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US20110248366 |
RADIATION-DETECTING DEVICE AND METHOD OF MANUFACTURING SAME
A method of manufacturing a radiation-detecting device including spaced first columnar scintillators, second columnar scintillators which are located between the neighboring first columnar...
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US20110193138 |
ELECTRONIC DEVICE AND MANUFACTURING METHOD
Provided is an electronic device that generates an output signal corresponding to an input signal, comprising a signal processing section that receives the input signal and outputs the output...
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US20110180890 |
RADIOGRAPHIC IMAGE DETECTOR, METHOD OF PRODUCING THE SAME, AND PROTECTIVE MEMBER
A method of producing a radiographic image detector includes: preparing a thin-film transistor substrate comprising an insulating substrate and a thin-film transistor that is disposed on a surface...
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US20110163242 |
LAYERED SEMICONDUCTOR NEUTRON DETECTORS
Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor...
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