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US20080122001 INTEGRATED CIRCUIT HAVING DOPED SEMICONDUCTOR BODY AND METHOD  
An integrated circuit and method for making an integrated circuit including doping a semiconductor body is disclosed. One embodiment provides defect-correlated donors and/or acceptors. The defects...
US20090026586 Superjunction Device Having Oxide Lined Trenches and Method for Manufacturing a Superjunction Device Having Oxide Lined Trenches  
A method of manufacturing a semiconductor device includes providing semiconductor substrate having trenches and mesas. At least one mesa has first and second sidewalls. The method includes doping...
US20130200443 Interface Engineering to Optimize Metal-III-V Contacts  
Techniques for fabricating self-aligned contacts in III-V FET devices are provided. In one aspect, a method for fabricating a self-aligned contact to III-V materials includes the following steps....
US20110132423 Photovoltaic solar module comprising bifacial solar cells  
A photovoltaic solar cell module comprises a plurality of bifacial solar cells and electrical conductors. Each bifacial solar cell comprises a plurality of bus-bar contacts. A phosphorous silicon...
US20130313684 PROCESS FOR FORMING A PLANAR DIODE USING ONE MASK  
A planar diode and method of making the same employing only one mask. The diode is formed by coating a substrate with an oxide, removing a central portion of the oxide to define a window through...
US20090142911 MASKING PASTE, METHOD OF MANUFACTURING SAME, AND METHOD OF MANUFACTURING SOLAR CELL USING MASKING PASTE  
A masking paste used as a mask for controlling diffusion when diffusing a p-type dopant and an n-type dopant into a semiconductor substrate and forming a high-concentration p-doped region and a...
US20090127620 SEMICONDUCTOR DOPING WITH REDUCED GATE EDGE DIODE LEAKAGE  
Semiconductor doping techniques, along with related methods and structures, are disclosed that produce components having a more tightly controlled source and drain extension region dopant profiles...
US20110195541 COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR FORMING N-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING PHOTOVOLTAIC CELL  
The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer...
US20100087013 Nanosensors and related technologies  
The present invention generally relates to nanotechnology and sub-microelectronic circuitry, as well as associated methods and devices, for example, nanoscale wire devices and methods for use in...
US20140110670 DOPED GRAPHENE STRUCTURE COMPRISING HYDROPHOBIC ORGANIC MATERIAL, METHOD FOR PREPARING THE SAME, AND TRANSPARENT ELECTRODE, DISPLAY DEVICE AND SOLAR CELL COMPRISING THE ELECTRODE  
A hydrophobic organic layer may be formed on a surface of a graphene doped with a dopant to improve stability of the doped graphene with respect to moisture and temperature. Thus, the transparent...
US20060094214 Semiconductor doping process  
A semiconductor doping process uses hydrogen in a diffusion furnace to prevent platinum/gold atoms from gathering around a defect area of the semiconductor wafer. Platinum/gold atom aggregation...
US20140120648 COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD OF FORMING N-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL  
The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element...
US20130078759 COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD OF FORMING N-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL  
The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element...
US20120122306 DIFFUSING AGENT COMPOSITION, AND METHOD FOR FORMING AN IMPURITY DIFFUSION LAYER  
A diffusing agent composition contains a condensation product (A) and an impurity diffusion component (B). The condensation product (A) is a reaction product yielded by hydrolyzing an alkoxysilane....
US20080150084 Phosphorus-Stabilized Transition Metal Oxide Diffusion Barrier  
Method for controlling glass formation on a semiconductor substrate. By using a doped diffusion barrier material, such as a transition metal oxide paste, the subsequent diffusion of glass forming...
US20100062562 Methods Utilizing Microwave Radiation During Formation Of Semiconductor Constructions  
Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In...
US20080268628 N-TYPE SEMICONDUCTOR COMPONENT WITH IMPROVED DOPANT IMPLANTATION PROFILE AND METHOD OF FORMING SAME  
The disclosure relates to a method of forming an n-type doped active area on a semiconductor substrate that presents an improved placement profile. The method comprises the placement of arsenic in...
US20140124896 FORMULATIONS OF SOLUTIONS AND PROCESSES FOR FORMING A SUBSTRATE INCLUDING AN ARSENIC DOPANT  
Formulations of solutions and processes are described to form a substrate including a dopant. In particular implementations, the dopant may include arsenic (As). In an embodiment, a dopant solution...
US20090020832 Semiconductor Devices and the Manufacture Thereof  
A power semiconductor device includes a semiconductor body (10), the semiconductor body comprising source and drain regions (13, 14, 14a) of a first conductivity type, and a channel-accommodating...
US20130075748 METHOD AND SYSTEM FOR DIFFUSION AND IMPLANTATION IN GALLIUM NITRIDE BASED DEVICES  
A method of forming a doped region in a III-nitride substrate includes providing the III-nitride substrate and forming a masking layer having a predetermined pattern and coupled to a portion of the...
US20110121423 Concentric Ring Mask for Controlling The Shape of a Planar PN Junction  
A mask for use in making a planar PN junction in a semiconductor device includes a central mask opening and a plurality of spaced apart concentric mask openings surrounding the central mask...
US20080220598 Method for Dopant Diffusion  
A method for controlling dopant diffusion is disclosed. Using certain control parameters that are not used in the prior art, the method provides an unprecedented measure of control over the dopant...
US20060183307 Boron diffusion in silicon devices  
Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric...
US20110248267 AIR-STABLE N-CHANNEL ORGANIC ELECTRONIC DEVICES  
In connection with various example embodiments, an organic electronic device is provided with an organic material that is susceptible to decreased mobility due to the trapping of electron charge...
US20110263110 FILM-FORMING COMPOSITION  
A film-forming composition for use in a coating diffusion method, capable of diffusing a dopant at a higher concentration, and further capable of concomitantly forming a silica-based coating film...
US20120227810 SOLAR CELL STRUCTURES, PHOTOVOLTAIC PANELS AND CORRESPONDING PROCESSES  
Photovoltaic modules comprise solar cells having doped domains of opposite polarities along the rear side of the cells. The doped domains can be located within openings through a dielectric...
US20100267174 LED Substrate Processing  
Embodiments of the present invention pertain to substrate processing equipment and methods incorporating light emitting diodes (LEDs) for thermally processing substrates. Such light sources offer a...
US20090199902 SILICON SOLAR CELLS COMPRISING LANTHANIDES FOR MODIFYING THE SPECTRUM AND METHOD FOR THE PRODUCTION THEREOF  
The aim of the invention is to improve the energy yield efficiency of solar cells. According to the invention, the silicon material is doped with one or more different lanthanides such that said...
US20090001483 Method for Forming a Nickelsilicide FUSI Gate  
Ni3Si2 FUSI gates can be formed inter alia by further reaction of NiSi/Ni2Si gate stacks. Ni3Si2 behaves similarly to NiSi in terms of work function values, and of modulation with dopants on SiO2,...
US20090087971 METHOD FOR FABRICATING SEMICONDUCTOR DEVICES WITH REDUCED JUNCTION DIFFUSION  
A transistor which includes halo regions disposed in a substrate adjacent to opposing sides of the gate. The halo regions have upper and lower regions. The upper region is a crystalline region with...
US20100041220 METHODS FOR UNIFORMLY OPTICALLY ANNEALING REGIONS OF A SEMICONDUCTOR SUBSTRATE  
Methods for uniformly optically annealing regions of a semiconductor substrate and methods for fabricating semiconductor substrates using uniform optical annealing are provided. In accordance with...
US20080142921 METHOD OF FABRICATING SEMICONDUCTOR DEVICE  
To fabricate a Schottky barrier diode in which a decrease in on current due to parasitic resistance is suppressed, variations in on current are suppressed, and an increase in off current is...
US20090051013 SEMICONDUCTOR WAFER FOR SEMICONDUCTOR COMPONENTS AND PRODUCTION METHOD  
A semiconductor wafer for semiconductor components and to a method for its production is disclosed. In one embodiment, the semiconductor wafer includes a front side with an adjoining near-surface...
US20060234484 METHOD AND STRUCTURE FOR ION IMPLANTATION BY ION SCATTERING  
A scatter-implant process and device is provided where a bi-level doping pattern is achieved in a single doping step. Additionally, devices having different breakdown voltages can be produced in a...
US20110079262 DIFFUSING AGENT COMPOSITION, METHOD OF FORMING IMPURITY DIFFUSION LAYER, AND SOLAR BATTERY  
An embodiment of the present invention relates to a diffusing agent composition used in printing an impurity-diffusing component onto a semiconductor substrate, wherein the diffusing agent...
US20090078982 ALPHA HYDROXY CARBOXYLIC ACID ETCHANTS FOR SILICON MICROSTRUCTURES  
α-Hydroxy carboxylic acid etchants for silicon microstructures are generally described. In one example, a method includes fabricating a protruding structure on a semiconductor substrate, the ...
US20110129975 METHOD FOR FABRICATING SIDE CONTACT IN SEMICONDUCTOR DEVICE USING DOUBLE TRENCH PROCESS  
A method for fabricating a semiconductor device is provided, the method includes forming a double trench including a first trench and a second trench formed below the first trench and having...
US20120252196 METHOD FOR FORMING ULTRA-SHALLOW DOPING REGIONS BY SOLID PHASE DIFFUSION  
A method for forming an ultra-shallow dopant region in a substrate is provided. In one embodiment, the method includes depositing a dopant layer in direct contact with the substrate, the dopant...
US20080144354 Resistive memory array using P-I-N diode select device and methods of fabrication thereof  
An electronic structure includes a resistive memory device, and a P-I-N diode in operative association with the resistive memory device. A plurality of such electronic structures are used in a...
US20100171092 METHOD FOR CONTROLLING OPTIC INTERBAND TRANSITION OF CARBON NANOTUBES, THE CARBON NANOTUBES RESULTING THEREFROM AND DEVICES THAT COMPRISE THE CARBON NANOTUBES  
A new single optical interband transition occurs at the corresponding p-doping state of the carbon nanotubes in the VIS-NIR region when the degree of p-doping of carbon nanotubes is increased...
US20140120705 INORGANIC PHOSPHATE CONTAINING DOPING COMPOSITIONS  
A composition for doping semiconductor materials, such as silicon, may contain a) a solvent and a) an inorganic salt of a phosphor containing acid dispersed in the solvent. Also disclosed are...
US20120133026 Electrically Actuated Device And Method Of Controlling The Formation Of Dopants Therein  
An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. The device further includes at least one of...
US20100068848 ONE-STEP DIFFUSION METHOD FOR FABRICATING A DIFFERENTIAL DOPED SOLAR CELL  
A one-step diffusion method for fabricating a differential doped solar cell is described. The one-step diffusion method includes the following step. First, a substrate is provided. A doping control...
US20090230515 INSULATED GATE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A well region in which an insulated gate semiconductor element is formed is a diffusion region, and an impurity concentration of the well region is lower toward its bottom portion. This leads to a...
US20130244411 DIODES WITH A DOG BONE OR CAP-SHAPED JUNCTION PROFILE TO ENHANCE ESD PERFORMANCE, AND OTHER SUBSTRUCTURES, INTEGRATED CIRCUITS AND PROCESSES OF MANUFACTURE AND TESTING  
An integrated circuit structure includes a semiconductor doped area (NWell) having a first conductivity type, and a layer (PSD) that overlies a portion of said doped area (NWell) and has a doping...
US20110298092 DIODES WITH A DOG BONE OR CAP-SHAPED JUNCTION PROFILE TO ENHANCE ESD PERFORMANCE, AND OTHER SUBSTRUCTURES, INTEGRATED CIRCUITS AND PROCESSES OF MANUFACTURE AND TESTING  
An integrated circuit structure includes a semiconductor doped area (NWell) having a first conductivity type, and a layer (PSD) that overlies a portion of said doped area (NWell) and has a doping...
US20130260545 METHODS AND COMPOSITIONS FOR DOPING SILICON SUBSTRATES WITH MOLECULAR MONOLAYERS  
Compositions and methods for doping silicon substrates by treating the substrate with a diluted dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant-containing...
US20120003826 METHODS AND COMPOSITIONS FOR DOPING SILICON SUBSTRATES WITH MOLECULAR MONOLAYERS  
Compositions and methods for doping silicon substrates by treating the substrate with a diluted dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant-containing...
US20060099782 Method for forming an interface between germanium and other materials  
Interfaces that are portions of semiconductor structures used in integrated circuits and optoelectronic devices are described. In one instance, the semiconductor structure has an interface...
US20090130832 SILICON SURFACE STRUCTURING METHOD  
A method for the structuring of multicrystalline silicon substrate surfaces and emitter diffusion into said surfaces comprises the following steps: providing a texturing solution which comprises at...
Matches 1 - 50 out of 126 1 2 3 >