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US20080122001 |
INTEGRATED CIRCUIT HAVING DOPED SEMICONDUCTOR BODY AND METHOD
An integrated circuit and method for making an integrated circuit including doping a semiconductor body is disclosed. One embodiment provides defect-correlated donors and/or acceptors. The defects...
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US20090026586 |
Superjunction Device Having Oxide Lined Trenches and Method for Manufacturing a Superjunction Device Having Oxide Lined Trenches
A method of manufacturing a semiconductor device includes providing semiconductor substrate having trenches and mesas. At least one mesa has first and second sidewalls. The method includes doping...
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US20110132423 |
Photovoltaic solar module comprising bifacial solar cells
A photovoltaic solar cell module comprises a plurality of bifacial solar cells and electrical conductors. Each bifacial solar cell comprises a plurality of bus-bar contacts. A phosphorous silicon...
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US20090142911 |
MASKING PASTE, METHOD OF MANUFACTURING SAME, AND METHOD OF MANUFACTURING SOLAR CELL USING MASKING PASTE
A masking paste used as a mask for controlling diffusion when diffusing a p-type dopant and an n-type dopant into a semiconductor substrate and forming a high-concentration p-doped region and a...
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US20090127620 |
SEMICONDUCTOR DOPING WITH REDUCED GATE EDGE DIODE LEAKAGE
Semiconductor doping techniques, along with related methods and structures, are disclosed that produce components having a more tightly controlled source and drain extension region dopant profiles...
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US20110195541 |
COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR FORMING N-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING PHOTOVOLTAIC CELL
The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer...
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US20100087013 |
Nanosensors and related technologies
The present invention generally relates to nanotechnology and sub-microelectronic circuitry, as well as associated methods and devices, for example, nanoscale wire devices and methods for use in...
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US20060094214 |
Semiconductor doping process
A semiconductor doping process uses hydrogen in a diffusion furnace to prevent platinum/gold atoms from gathering around a defect area of the semiconductor wafer. Platinum/gold atom aggregation...
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US20130078759 |
COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD OF FORMING N-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL
The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element...
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US20120122306 |
DIFFUSING AGENT COMPOSITION, AND METHOD FOR FORMING AN IMPURITY DIFFUSION LAYER
A diffusing agent composition contains a condensation product (A) and an impurity diffusion component (B). The condensation product (A) is a reaction product yielded by hydrolyzing an alkoxysilane....
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US20080150084 |
Phosphorus-Stabilized Transition Metal Oxide Diffusion Barrier
Method for controlling glass formation on a semiconductor substrate. By using a doped diffusion barrier material, such as a transition metal oxide paste, the subsequent diffusion of glass forming...
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US20100062562 |
Methods Utilizing Microwave Radiation During Formation Of Semiconductor Constructions
Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In...
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US20080268628 |
N-TYPE SEMICONDUCTOR COMPONENT WITH IMPROVED DOPANT IMPLANTATION PROFILE AND METHOD OF FORMING SAME
The disclosure relates to a method of forming an n-type doped active area on a semiconductor substrate that presents an improved placement profile. The method comprises the placement of arsenic in...
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US20090020832 |
Semiconductor Devices and the Manufacture Thereof
A power semiconductor device includes a semiconductor body (10), the semiconductor body comprising source and drain regions (13, 14, 14a) of a first conductivity type, and a channel-accommodating...
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US20130075748 |
METHOD AND SYSTEM FOR DIFFUSION AND IMPLANTATION IN GALLIUM NITRIDE BASED DEVICES
A method of forming a doped region in a III-nitride substrate includes providing the III-nitride substrate and forming a masking layer having a predetermined pattern and coupled to a portion of the...
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US20110121423 |
Concentric Ring Mask for Controlling The Shape of a Planar PN Junction
A mask for use in making a planar PN junction in a semiconductor device includes a central mask opening and a plurality of spaced apart concentric mask openings surrounding the central mask...
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US20080220598 |
Method for Dopant Diffusion
A method for controlling dopant diffusion is disclosed. Using certain control parameters that are not used in the prior art, the method provides an unprecedented measure of control over the dopant...
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US20060183307 |
Boron diffusion in silicon devices
Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric...
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US20110248267 |
AIR-STABLE N-CHANNEL ORGANIC ELECTRONIC DEVICES
In connection with various example embodiments, an organic electronic device is provided with an organic material that is susceptible to decreased mobility due to the trapping of electron charge...
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US20110263110 |
FILM-FORMING COMPOSITION
A film-forming composition for use in a coating diffusion method, capable of diffusing a dopant at a higher concentration, and further capable of concomitantly forming a silica-based coating film...
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US20120227810 |
SOLAR CELL STRUCTURES, PHOTOVOLTAIC PANELS AND CORRESPONDING PROCESSES
Photovoltaic modules comprise solar cells having doped domains of opposite polarities along the rear side of the cells. The doped domains can be located within openings through a dielectric...
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US20100267174 |
LED Substrate Processing
Embodiments of the present invention pertain to substrate processing equipment and methods incorporating light emitting diodes (LEDs) for thermally processing substrates. Such light sources offer a...
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US20090199902 |
SILICON SOLAR CELLS COMPRISING LANTHANIDES FOR MODIFYING THE SPECTRUM AND METHOD FOR THE PRODUCTION THEREOF
The aim of the invention is to improve the energy yield efficiency of solar cells. According to the invention, the silicon material is doped with one or more different lanthanides such that said...
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US20090001483 |
Method for Forming a Nickelsilicide FUSI Gate
Ni3Si2 FUSI gates can be formed inter alia by further reaction of NiSi/Ni2Si gate stacks. Ni3Si2 behaves similarly to NiSi in terms of work function values, and of modulation with dopants on SiO2,...
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US20090087971 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICES WITH REDUCED JUNCTION DIFFUSION
A transistor which includes halo regions disposed in a substrate adjacent to opposing sides of the gate. The halo regions have upper and lower regions. The upper region is a crystalline region with...
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US20100041220 |
METHODS FOR UNIFORMLY OPTICALLY ANNEALING REGIONS OF A SEMICONDUCTOR SUBSTRATE
Methods for uniformly optically annealing regions of a semiconductor substrate and methods for fabricating semiconductor substrates using uniform optical annealing are provided. In accordance with...
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US20080142921 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
To fabricate a Schottky barrier diode in which a decrease in on current due to parasitic resistance is suppressed, variations in on current are suppressed, and an increase in off current is...
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US20090051013 |
SEMICONDUCTOR WAFER FOR SEMICONDUCTOR COMPONENTS AND PRODUCTION METHOD
A semiconductor wafer for semiconductor components and to a method for its production is disclosed. In one embodiment, the semiconductor wafer includes a front side with an adjoining near-surface...
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US20060234484 |
METHOD AND STRUCTURE FOR ION IMPLANTATION BY ION SCATTERING
A scatter-implant process and device is provided where a bi-level doping pattern is achieved in a single doping step. Additionally, devices having different breakdown voltages can be produced in a...
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US20110079262 |
DIFFUSING AGENT COMPOSITION, METHOD OF FORMING IMPURITY DIFFUSION LAYER, AND SOLAR BATTERY
An embodiment of the present invention relates to a diffusing agent composition used in printing an impurity-diffusing component onto a semiconductor substrate, wherein the diffusing agent...
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US20090078982 |
ALPHA HYDROXY CARBOXYLIC ACID ETCHANTS FOR SILICON MICROSTRUCTURES
α-Hydroxy carboxylic acid etchants for silicon microstructures are generally described. In one example, a method includes fabricating a protruding structure on a semiconductor substrate, the ...
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US20110129975 |
METHOD FOR FABRICATING SIDE CONTACT IN SEMICONDUCTOR DEVICE USING DOUBLE TRENCH PROCESS
A method for fabricating a semiconductor device is provided, the method includes forming a double trench including a first trench and a second trench formed below the first trench and having...
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US20120252196 |
METHOD FOR FORMING ULTRA-SHALLOW DOPING REGIONS BY SOLID PHASE DIFFUSION
A method for forming an ultra-shallow dopant region in a substrate is provided. In one embodiment, the method includes depositing a dopant layer in direct contact with the substrate, the dopant...
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US20080144354 |
Resistive memory array using P-I-N diode select device and methods of fabrication thereof
An electronic structure includes a resistive memory device, and a P-I-N diode in operative association with the resistive memory device. A plurality of such electronic structures are used in a...
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US20100171092 |
METHOD FOR CONTROLLING OPTIC INTERBAND TRANSITION OF CARBON NANOTUBES, THE CARBON NANOTUBES RESULTING THEREFROM AND DEVICES THAT COMPRISE THE CARBON NANOTUBES
A new single optical interband transition occurs at the corresponding p-doping state of the carbon nanotubes in the VIS-NIR region when the degree of p-doping of carbon nanotubes is increased...
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US20120133026 |
Electrically Actuated Device And Method Of Controlling The Formation Of Dopants Therein
An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. The device further includes at least one of...
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US20100068848 |
ONE-STEP DIFFUSION METHOD FOR FABRICATING A DIFFERENTIAL DOPED SOLAR CELL
A one-step diffusion method for fabricating a differential doped solar cell is described. The one-step diffusion method includes the following step. First, a substrate is provided. A doping control...
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US20090230515 |
INSULATED GATE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A well region in which an insulated gate semiconductor element is formed is a diffusion region, and an impurity concentration of the well region is lower toward its bottom portion. This leads to a...
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US20110298092 |
DIODES WITH A DOG BONE OR CAP-SHAPED JUNCTION PROFILE TO ENHANCE ESD PERFORMANCE, AND OTHER SUBSTRUCTURES, INTEGRATED CIRCUITS AND PROCESSES OF MANUFACTURE AND TESTING
An integrated circuit structure includes a semiconductor doped area (NWell) having a first conductivity type, and a layer (PSD) that overlies a portion of said doped area (NWell) and has a doping...
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US20120003826 |
METHODS AND COMPOSITIONS FOR DOPING SILICON SUBSTRATES WITH MOLECULAR MONOLAYERS
Compositions and methods for doping silicon substrates by treating the substrate with a diluted dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant-containing...
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US20060099782 |
Method for forming an interface between germanium and other materials
Interfaces that are portions of semiconductor structures used in integrated circuits and optoelectronic devices are described. In one instance, the semiconductor structure has an interface...
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US20090130832 |
SILICON SURFACE STRUCTURING METHOD
A method for the structuring of multicrystalline silicon substrate surfaces and emitter diffusion into said surfaces comprises the following steps: providing a texturing solution which comprises at...
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US20080194087 |
Polysilicon gate formation by in-situ doping
A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric layer on the semiconductor substrate; forming a first silicon-containing layer...
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US20090108323 |
Method of forming nonvolatile memory device having floating gate and related device
A method of manufacturing a non-volatile memory device is provided. The method includes forming isolation patterns defining an active region on a substrate, forming a floating gate pattern on the...
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US20080248638 |
PROCESS FOR MANUFACTURING VOLTAGE-CONTROLLED TRANSISTOR
The present invention provides a self-driven LDMOS which utilizes a parasitic resistor between a drain terminal and an auxiliary region. The parasitic resistor is formed between two depletion...
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US20070264808 |
PLASMA DOPING METHOD AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME
A plasma doping method includes providing a doping source over a substrate. The doping source includes dopants that are to be injected into the substrate. At least two different bias voltages are...
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US20090026580 |
Semiconductor Device and Manufacturing Method
A semiconductor device and its manufacturing method are disclosed. The semiconductor device includes at least one integrated circuit on a semiconductor substrate having an active side and a back...
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US20080227276 |
Silicon Substrate With Reduced Surface Roughness
The present disclosure provides a method for fabricating a semiconductor device including providing a semiconductor substrate comprising a first surface and a second surface, wherein at least one...
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US20080090394 |
Temperature Synthesis of Hexagonal Zns Nanocrystals as Well as Derivatives with Different Transition Metal Dopants Using the Said Method
A method to fabricate semiconductor nanocrystals which comprises dissolving a metal source in a first solvent that contains at least one functional —OH group to form a mixture and heating the m...
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US20100230771 |
METHODS AND ARRANGEMENT FOR DIFFUSING DOPANTS INTO SILICON
A method for diffusing two dissimilar dopant materials onto a semiconductor cell wafer in a single thermal processing step. The method includes placing a first dopant source on a semiconductor cell...
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