Matches 1 - 8 out of 8


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US20090098718 Multiple mask and method for producing differently doped regions  
In order to produce doping regions (DG) in a substrate (S) having different dopings with the aid of a single mask (DM) different mask regions are provided which have elongated mask openings (MO)...
US20130032883 FABRICATION OF FIELD-EFFECT TRANSISTORS WITH ATOMIC LAYER DOPING  
Field effect transistors fabricated using atomic layer doping processes are disclosed. In accordance with an embodiment of an atomic layer doping method, a semiconducting surface and a dopant gas...
US20160329211 SELECTIVE DOPANT JUNCTION FOR A GROUP III-V SEMICONDUCTOR DEVICE  
An approach to providing a method of forming a dopant junction in a semiconductor device. The approach includes performing a surface modification treatment on an exposed surface of a semiconductor...
US20160133481 THERMAL DOPING BY VACANCY FORMATION IN NANOCRYSTALS  
The invention generally relates to methods of thermal doping by vacancy formation in nanocrystals, devices and uses thereof.
US20120149181 METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER  
There is provided a method for manufacturing a semiconductor wafer, comprising: performing heating so that metals dissolve into semiconductors of the wafer to form a semiconductor-metal compound;...
US20110309489 METHOD FOR FORMING A DOPED REGION IN A SEMICONDUCTOR LAYER OF A SUBSTRATE AND USE OF SUCH METHOD  
A method of forming a doped region in a semiconductor layer of a substrate by alloying with doping elements is disclosed. In one aspect, the method includes screen printing a paste layer of doping...
US20110233711 METHOD FOR LOCAL CONTACTING AND LOCAL DOPING OF A SEMICONDUCTOR LAYER  
A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application...
US20110021010 METHOD FOR DOUBLE PATTERN DENSITY  
A method deposits an undoped silicon layer on a primary layer, deposits a cap layer on the undoped silicon layer, patterns a masking layer on the cap layer, and patterns the undoped silicon layer...
Matches 1 - 8 out of 8