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US20070026544 Impurity diffusion simulation method, impurity diffusion simulation apparatus, and impurity diffusion simulation program  
The as-implanted concentration profile of impurity atoms in the semiconductor substrate is calculated, and a number of interstitial atoms to be generated in the semiconductor substrate by one...
US20110115009 CONTROL GATE  
A method for forming a semiconductor device is disclosed. The method includes providing a substrate prepared with a second gate structure. An inter-gate dielectric is formed on the substrate and...
US20120137971 HYDROPHOBIC PROPERTY ALTERATION USING ION IMPLANTATION  
A template used for printing is implanted to change the properties of the materials it is composed of. This template may have multiple surfaces that define indentations. The ion species that is...
US20110254118 Schottky Diode with Control Gate for Optimization of the On State Resistance, the Reverse Leakage, and the Reverse Breakdown  
A Schottky diode optimizes the on state resistance, the reverse leakage current, and the reverse breakdown voltage of the Schottky diode by forming an insulated control gate over a region that...
US20140329377 SUPPLY SOURCE AND METHOD FOR ENRICHED SELENIUM ION IMPLANTATION  
A novel method for ion implanting isotopically enriched selenium containing source material is provided. The source material is selected and enriched in a specific mass isotope of selenium,...
US20120164802 ADVANCED CMOS USING SUPER STEEP RETROGRADE WELLS  
The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric...
US20150037966 METHOD FOR PRODUCING A PATTERN IN AN INTEGRATED CIRCUIT AND CORRESPONDING INTEGRATED CIRCUIT  
At least one projecting block is formed in an element. The projecting block is then covered with a first cover layer so as to form a concave ridge self-aligned with the projecting block and having...
US20120235230 MOSFET DEVICE WITH THICK TRENCH BOTTOM OXIDE  
In one general aspect, an apparatus can include a first trench oxide disposed within a first trench of an epitaxial layer and having a trench bottom oxide disposed below a gate portion of the...
US20150024580 Method For Implant Productivity Enhancement  
A method of processing a workpiece is disclosed, where the ion chamber is first coated with the desired dopant species and another species. Following this conditioning process, a feedgas, which...
US20120302049 METHOD FOR IMPLANTING WAFER  
The disclosure provides a method for wafer implantation including the following steps: providing a wafer, wherein the wafer comprises a central circular portion, and a peripheral annular portion...
US20110229987 METHOD FOR LOW TEMPERATURE ION IMPLANTATION  
Techniques for low temperature ion implantation are provided to improve throughput. Specifically, the pressure of the backside gas may temporarily, continually or continuously increase before the...
US20120108044 ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME  
An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron...
US20110159671 ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME  
An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron...
US20120199957 PHOTORESISTS AND METHODS FOR USE THEREOF  
New photoresists are provided that comprise a multi-keto component and that are particularly useful for ion implant lithography applications. Preferred photoresists of the invention can exhibit...
US20150243548 Control of FET Back-Channel Interface Characteristics  
A method and structure for control of FET back-channel interface characteristics of an integrated circuit by implanting of selected implantation species at or near a device interface accessible...
US20110086500 IMPURITY IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS  
An impurity is implanted by ion implantation into an object to be processed. The ion implantation is performed using an ion beam which is diverged after being temporarily converged.
US20130005126 APPLICATION OF CLUSTER BEAM IMPLANTATION FOR FABRICATING THRESHOLD VOLTAGE ADJUSTED FETS  
Semiconductor structures including a high k gate dielectric material that has at least one surface threshold voltage adjusting region located within 3 nm or less from an upper surface of the high...
US20140264253 LEAKAGE REDUCTION STRUCTURES FOR NANOWIRE TRANSISTORS  
A nanowire device of the present description may include a highly doped underlayer formed between at least one nanowire transistor and the microelectronic substrate on which the nanowire...
US20110133189 NMOS ARCHITECTURE INVOLVING EPITAXIALLY-GROWN IN-SITU N-TYPE-DOPED EMBEDDED eSiGe:C SOURCE/DRAIN TARGETING  
An NMOS transistor is formed with improved manufacturability. An embodiment includes forming N-type doped embedded silicon germanium containing carbon (eSiGe:C) in source/drain regions of a...
US20140011346 CLUSTER ION IMPLANTATION OF ARSENIC AND PHOSPHORUS  
An ion implantation method, in which a dopant source composition is ionized to form dopant ions, and the dopant ions are implanted in a substrate. The dopant source composition includes cluster...
US20110034014 COLD IMPLANT FOR OPTIMIZED SILICIDE FORMATION  
A method of applying a silicide to a substrate while minimizing adverse effects, such as lateral diffusion of metal or “piping” is disclosed. The implantation of the source and drain regions of a...
US20130072008 TECHNIQUE FOR ION IMPLANTING A TARGET  
A technique for ion implanting a target is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for ion implanting a target, the method comprising:...
US20130095643 METHODS FOR IMPLANTING DOPANT SPECIES IN A SUBSTRATE  
Methods for processing a substrate are provided herein. In some embodiments, a method of processing a substrate may include implanting a dopant species into the one or more regions of the...
US20110254133 PHOTORESISTS AND METHODS FOR USE THEREOF  
New photoresist are provided that comprises an Si-containing component and that are particularly useful for ion implant lithography applications. Photoresists of the invention can exhibit good...
US20120220112 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS  
A positive resist composition based on a polymer comprising recurring units of (meth)acrylate having a cyclic acid labile group and a dihydroxynaphthalene novolak resin, and containing a photoacid...
US20120190181 CARBON IMPLANTATION PROCESS AND CARBON ION PRECURSOR COMPOSITION  
Methods and carbon ion precursor compositions for implanting carbon ions generally includes vaporizing and ionizing a gas mixture including carbon oxide and methane gases in an ion source to...
US20100055882 Junction Termination Extension with Controllable Doping Profile and Controllable Width for High-Voltage Electronic Devices  
Methods for producing a junction termination extension surrounding the edge of a cathode or anode junction in a semiconductor substrate, where the junction termination extension has a controlled...
US20110212608 Sputtering-Less Ultra-Low Energy Ion Implantation  
Methods of implanting dopants into a silicon substrate using a predeposited sacrificial material layer with a defined thickness that is removed by sputtering effect is provided.
US20060073684 Method for fabricating a doped zone in a semiconductor body  
One embodiment of the invention relates to a method for fabricating a doped semiconductor zone in a semiconductor body. The method includes implanting dopant particles via one side into the...
US20150206690 SYSTEM AND METHOD FOR GENERATING IONS IN AN ION SOURCE  
Embodiments of a method for generating ions in an ion source are provided. The method for generating ions in an ion source includes introducing a dopant gas and a diluent gas into an ion source...
US20110207308 TECHNIQUE FOR LOW-TEMPERATURE ION IMPLANTATION  
A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The...
US20150228486 METHOD AND APPARATUS FOR ENHANCED LIFETIME AND PERFORMANCE OF ION SOURCE IN AN ION IMPLANTATION SYSTEM  
An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or...
US20140273420 ION IMPLANTATION  
One or more techniques or systems for ion implantation are provided herein. A pressure control module is configured to maintain a substantially constant pressure within an ion implantation or...
US20090215220 SOLID-STATE IMAGE CAPTURING DEVICE, IMAGE CAPTURING DEVICE, AND MANUFACTURING METHOD OF SOLID-STATE IMAGE CAPTURING DEVICE  
A solid-state image capturing device, includes a semiconductor board, upon which same semiconductor board are disposed in a predetermined order: a first detecting unit for detecting a first...
US20130341761 METHODS FOR EXTENDING ION SOURCE LIFE AND IMPROVING ION SOURCE PERFORMANCE DURING CARBON IMPLANTATION  
A novel method and system for extending ion source life and improving ion source performance during carbon implantation are provided. Particularly, the carbon ion implant process involves...
US20090291547 Method for Reducing Plasma Discharge Damage During Processing  
A semiconductor process and apparatus to provide a way to reduce plasma-induced damage by applying a patterned layer of photoresist (114) which includes resist openings formed (117) over the...
US20050191829 Solid material comprising a structure of almost-completely-polarised electronic orbitals, method of obtaining same and use thereof in electronics and nanoelectronics  
The invention relates to a solid material which is characterized in that the electrons of the conduction band are almost completely polarised in the selected orbital. The invention also relates to...
US20150261087 Photoresist System and Method  
In an embodiment a radical inhibitor is included within a photoresist in order to reduce the amount of cross-linking that occurs during subsequent processing, such as an ion implantation process,...
US20090194800 Dual-Pixel Full Color CMOS Imager with Large Capacity Well  
A dual-pixel full color CMOS imager is provided. The imager comprises a two-photodiode stack including an n doped substrate, a bottom photodiode, and a top photodiode. The bottom photodiode has a...
US20100084699 FLOTOX-TYPE EEPROM AND METHOD FOR MANUFACTURING THE SAME  
A FLOTOX-TYPE EEPROM of the invention has a configuration wherein an N region 25 as an impurity region formed under a tunnel window 12 and a channel stopper region 19 formed under a LOCOS oxide...
US20090087969 METHOD TO IMPROVE A COPPER/DIELECTRIC INTERFACE IN SEMICONDUCTOR DEVICES  
Embodiments of methods for improving a copper/dielectric interface in semiconductor devices are generally described herein. Other embodiments may be described and claimed.
US20150044839 PHOTORESIST STRIPPING AND CLEANING COMPOSITION, METHOD OF ITS PREPARATION AND ITS USE  
A photoresist stripping and cleaning composition free from N-alkylpyrrolidones and added quaternary ammonium hydroxides comprising a component (A) which comprises the polar organic solvents...
US20060017079 N-type transistor with antimony-doped ultra shallow source and drain  
We disclose a process for forming ultra shallow n+p junctions. The junction is formed by, for example, implanting 3E14 ions/cm2 of antimony ions at 5 keV into silicon. The silicon is...
US20050227461 Semiconductor device having increased switching speed  
A semiconductor device is formed in a thin float zone wafer. Junctions are diffused into the top surface of the wafer and the wafer is then reduced in thickness by removal of material from its...
US20140134833 ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD  
An ion implantation apparatus includes a beamline device for transporting ions from an ion source to an implantation processing chamber. The implantation processing chamber includes a workpiece...
US20140099783 METHOD OF ADDING AN ADDITIONAL MASK IN THE ION-IMPLANTATION PROCESS  
The present invention discloses a method of adding an additional mask in the ion-implantation process. It relates to technical field of ion implantation. This invention comprises: a mask plate is...
US20120056149 METHODS FOR ADJUSTING THE CONDUCTIVITY RANGE OF A NANOTUBE FABRIC LAYER  
Methods for adjusting and/or limiting the conductivity range of a nanotube fabric layer are disclosed. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing...
US20140134834 Method of Fabricating Power Transistor with Protected Channel  
A transistor includes a substrate, a well formed in the substrate, a drain including a first impurity region implanted in the well, a source including a second impurity region implanted in the...
US20090227095 COUNTERDOPING FOR SOLAR CELLS  
Methods of counterdoping a solar cell, particularly an IBC solar cell are disclosed. One surface of a solar cell may require portions to be n-doped, while other portions are p-doped....
US20140179090 STORAGE AND SUB-ATMOSPHERIC DELIVERY OF DOPANT COMPOSITIONS FOR CARBON ION IMPLANTATION  
A supply source for delivery of a CO-containing dopant gas composition is provided. The composition includes a controlled amount of a diluent gas mixture such as xenon and hydrogen, which are each...

Matches 1 - 50 out of 363 1 2 3 4 5 6 7 8 >