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US20090294769 |
SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
According to a method of manufacturing a semiconductor device of the present invention, a gate electrode is formed above a substrate, and a insulating film is formed above the gate electrode. Then,...
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US20090291511 |
METHOD OF FORMING SEMICONDUCTOR THIN FILM AND SEMICONDUCTOR THIN FILM INSPECTION APPARATUS
A method of forming a semiconductor thin film includes the steps of: forming an amorphous semiconductor thin film on a substrate; forming a crystalline semiconductor thin film partially in each...
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US20090275178 |
METHOD OF MANUFACTURING POLYSILICON THIN FILM AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR HAVING THE SAME
In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy...
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US20090258465 |
MASK FOR SILICON CRYSTALLIZATION, METHOD OF FORMING POLY-SILICON THIN FILM, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR
A silicon crystallization mask of the present invention includes; a main exposure portion including a plurality of complete light transmission regions which completely transmit light therethrough,...
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US20090246939 |
METHOD FOR DEHYDROGENATION TREATMENT AND METHOD FOR FORMING CRYSTALLINE SILICON FILM
A dehydrogenation treatment method which includes forming a hydrogenated amorphous silicon film above a non-heat-resistant substrate, and eliminating bonded hydrogen from the hydrogenated amorphous...
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US20090224253 |
CRYSTALLIZATION METHOD, THIN FILM TRANSISTOR MANUFACTURING METHOD, THIN FILM TRANSISTOR, DISPLAY, AND SEMICONDUCTOR DEVICE
According to a crystallization method, in the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light, a light...
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US20090194770 |
DOUBLE-ACTIVE-LAYER STRUCTURE WITH A POLYSILICON LAYER AND A MICROCRYSTALLINE SILICON LAYER, METHOD FOR MANUFACTURING THE SAME AND ITS APPLICATION
A first amorphous silicon layer is formed over a substrate and a second amorphous silicon layer is formed over the first amorphous silicon layer. When a laser annealing process is performed, the...
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US20090189137 |
NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
In a phase change memory, electric property of a diode used as a selection device is extremely important. However, since crystal grain boundaries are present in the film of a diode using...
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US20090179310 |
Pillar devices and methods of making thereof
A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the...
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US20090176354 |
METHOD FOR FABRICATION OF SINGLE CRYSTAL DIODES FOR RESISTIVE MEMORIES
The present invention, in one embodiment, provides a method of producing a PN junction the method including providing a single crystal substrate; forming an insulating layer on the single crystal...
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US20090152506 |
PROCESS FOR PRODUCING ORIENTED INORGANIC CRYSTALLINE FILM, AND SEMICONDUCTOR DEVICE USING THE ORIENTED INORGANIC CRYSTALLINE FILM
In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film containing inorganic crystalline particles is formed on a substrate by a liquid phase technique using a...
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US20090149007 |
ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME
Provided are an electronic device and a method of manufacturing the same. The device includes a plastic substrate, a transparent thermal conductive layer stacked on the plastic substrate, a...
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US20090148347 |
NANO-CRYSTALLINE COMPOSITE-OXIDE THIN FILM, ENVIRONMENTAL GAS SENSOR USING THE THIN FILM, AND METHOD OF MANUFACTURING THE ENVIRONMENTAL GAS SENSOR
A nano-crystalline composite-oxide thin film for an environmental gas sensor, an environmental gas sensor using the thin film, and a method of manufacturing the environmental gas sensor are...
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US20090146146 |
Semiconductor Device formed in a Recrystallized Layer
A semiconductor device includes a substrate that includes a first layer and a recrystallized layer on the first layer. The first layer has a first intrinsic stress and the recrystallized layer has...
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US20090142892 |
Method of fabricating semiconductor device having thin strained relaxation buffer pattern and related device
A method of fabricating a semiconductor device includes forming a buffer pattern on a substrate, the buffer pattern including germanium, recrystallizing the buffer pattern to form a strained...
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US20090140255 |
Crystalline Semicondutor Film and Method for Manufacturing the Same
An island of a crystalline semiconductor according to the present invention has an upper surface and a sloped side surface, which are joined together with a curved surface. Crystal grains in a body...
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US20090137105 |
SYSTEMS AND METHODS FOR PREPARING EPITAXIALLY TEXTURED POLYCRYSTALLINE FILMS
The disclosed subject matter relates to systems and methods for preparing epitaxially textured polycrystalline films. In one or more embodiments, the method for making a textured thin film includes...
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US20090137104 |
Method of fabricating polycrystalline semiconductor
Disclosed is a method of providing a poly-Si layer used in fabricating poly-Si TFT's or devices containing poly-Si layers. Particularly, a method utilizing at least one metal plate covering the...
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US20090130795 |
SYSTEMS AND METHODS FOR PREPARATION OF EPITAXIALLY TEXTURED THICK FILMS
The disclosed subject matter relates to the use of laser crystallization of thin films to create epitaxially textured crystalline thick films. In one or more embodiments, a method for preparing a...
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US20090117716 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
To provide a high-performance semiconductor device using an SOI substrate in which a substrate having low heat resistance is used as a base substrate, to provide a high-performance semiconductor...
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US20090104759 |
Methods of manufacturing semiconductor devices including a doped silicon layer
Methods for manufacturing a semiconductor device include forming a seed layer containing a silicon material on a substrate. An amorphous silicon layer containing amorphous silicon material is...
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US20090085042 |
Display device having thin film semiconductor device and manufacturing method of thin film semiconductor device
A display device having a thin film semiconductor device including a semiconductor thin film having first and second semiconductor regions formed each into a predetermined shape above an insulative...
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US20090075436 |
METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR
A method of manufacturing a thin-film transistor (TFT) includes forming an amorphous silicon layer on a substrate, crystallizing the amorphous silicon layer into a polycrystalline silicon layer...
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US20090061603 |
METHOD OF CRYSTALLIZING SEMICONDUCTOR FILM
A method of crystallizing a semiconductor film including splitting a pulse laser beam oscillated from a laser oscillator, and synthesizing the split pulse laser beams after the split pulse laser...
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US20080318398 |
Method for manufacturing crystalline semiconductor film and semiconductor device
There is provided a method for manufacturing a crystalline semiconductor film. An insulating film is formed over a substrate; an amorphous semiconductor film is formed over the insulating film; a...
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US20080308534 |
PYROMETER FOR LASER ANNEALING SYSTEM COMPATIBLE WITH AMORPHOUS CARBON OPTICAL ABSORBER LAYER
In a laser annealing system for workpieces such as semiconductor wafers, a pyrometer wavelength response band is established within a narrow window lying between the laser emission band and a...
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US20080293224 |
METHOD OF FORMING A DIODE AND METHOD OF MANUFACTURING A PHASE-CHANGE MEMORY DEVICE USING THE SAME
In a method of forming a diode, a first amorphous thin film doped with first impurities is formed on a single crystalline substrate. A second amorphous thin film doped with second impurities is...
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US20080280425 |
Beam Homogenizer, and Laser Irradiation Method, Laser Irradiation Apparatus, and Laser Annealing Method of Non-Single Crystalline Semiconductor Film Using the Same
A rectangular beam having the energy density distribution homogenized in its short-side direction is formed in a beam homogenizer wherein two light reflection surfaces are parallel-provided in a...
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US20080233719 |
Method for Manufacturing Crystalline Semiconductor Film and Method for Manufacturing Thin Film Transistor
The present invention relates to a method for manufacturing a polycrystalline semiconductor film that can be used for a semiconductor device. In the method, an amorphous semiconductor film is...
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US20080233689 |
Method for manufacturing semiconductor device
The invention relates to a method for forming a uniform silicide film using a crystalline semiconductor film in which orientation of crystal planes is controlled, and a method for manufacturing a...
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US20080227274 |
MANUFACTURING METHOD OF DISPLAY DEVICE
In crystallization of a silicon film by annealing using a linear-shaped laser beam having a width of the short axis of the beam is ununiform, the profile (intensity distribution) of the laser beam...
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US20080217563 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS
The present invention is a semiconductor manufacturing apparatus by which an impurity can be introduced into an active layer at a low and a stable concentration in order to form semiconductor...
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US20080213986 |
LASER ANNEALING METHOD AND LASER ANNEALING DEVICE
In order to promote an effect of laser annealing in respect of a semiconductor film, moisture is intentionally included in an atmosphere in irradiating laser beam to the semiconductor film by which...
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US20080213985 |
METHOD OF FORMING POLYCRYSTALLINE SILICON THIN FILM AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR USING THE METHOD
Provided is a method of forming a polycrystalline silicon thin film with improved electrical characteristics. The method includes forming an amorphous silicon thin film on a substrate, partially...
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US20080213984 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A cap film is formed over semiconductor films formed over an insulating substrate; the semiconductor films are irradiated with a laser beam which is capable of completely melting the semiconductor...
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US20080206969 |
Laser Optical Apparatus
There is provided a structure for reducing optical loss in an optical apparatus (homogenizer) for making the intensity distribution of a laser beam uniform. In a multi-cylindrical lens (a glass...
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US20080206912 |
ARRAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND METHOD OF CRYSTALLIZING SILICON
An array substrate includes a base substrate, a switching element, and a pixel electrode. The switching element is on the base substrate. The switching element includes a poly silicon pattern...
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US20080164493 |
Structures containing electrodeposited germanium and methods for their fabrication
Methods for electrodepositing germanium on various semiconductor substrates such as Si, Ge, SiGe, and GaAs are provided. The electrodeposited germanium can be formed as a blanket or patterned film,...
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US20080132041 |
Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
A second laser light of a continuous wave oscillation is irradiated to a region melted by a first laser light of a pulsed oscillation having a harmonic. Specifically, the first laser light has a...
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US20080123200 |
Method and device for forming poly-silicon film
A method and a device for forming a poly-silicon film, using sequential lateral solidification (SLS) by laser irradiation through an optical device to pattern the laser beam so as to lengthen the...
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US20080102611 |
Method for fabricating a polysilicon layer having large and uniform grains
An exemplary method for fabricating a polysilicon layer includes the following steps. A substrate ( 10 ) is provided and an amorphous silicon layer ( 12 ) is formed over the substrate. An excimer...
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US20080070386 |
Device for irradiating a laser beam
A device for irradiating a laser beam onto an amorphous silicon thin film formed on a substrate. The device includes: a stage mounting the substrate; a laser oscillator for generating a laser beam;...
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US20080070372 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
In a method of manufacturing a semiconductor device, an insulating layer pattern defining at least one opening partially exposing a semiconductor substrate is formed on a semiconductor substrate...
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US20080067515 |
METHOD OF MANUFACTURING LATERALLY CRYSTALLIZED SEMICONDUCTOR LAYER AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR USING THE SAME METHOD
Provided are a method of manufacturing a laterally crystallized semiconductor layer and a method of manufacturing a thin film transistor (TFT) using the method. The method of manufacturing the...
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US20080050893 |
Manufacturing method of display device
A method of manufacturing a display device to improve the quality of a polycrystal silicon upon dehydrogenating and polycrystallizing an amorphous silicon at the outside of a display region of a...
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US20080048187 |
SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SEMICONDUCTOR THIN FILM, METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR, AND MANUFACTURING DEVICE OF SEMICONDUCTOR THIN FILM
A semiconductor thin film according to an embodiment of the present invention includes: a polycrystallized semiconductor thin film formed by applying laser light to an amorphous semiconductor thin...
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