Matches 1 - 50 out of 130 1 2 3 >


Match Document Document Title
US20100032719 PROBES FOR SCANNING PROBE MICROSCOPY  
Disclosed are probes for scanning probe microscopy comprising a semiconductor heterostructure and methods of making the probes. The semiconductor heterostructure determines the optical properties...
US20070105259 Growth method of indium gallium nitride  
A method for growing a high quality indium gallium nitride by metal organic chemical vapor deposition (MOCVD) is provided. In the method, the indium gallium nitride grows at a growth rate of at...
US20110312164 FORMING AN ELECTRODE HAVING REDUCED CORROSION AND WATER DECOMPOSITION ON SURFACE USING A CUSTOM OXIDE LAYER  
The present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A conductive layer is deposited on a substrate. The...
US20100015787 Realizing N-Face III-Nitride Semiconductors by Nitridation Treatment  
A method of forming a semiconductor structure includes providing a substrate; forming a buffer/nucleation layer over the substrate; forming a group-III nitride (III-nitride) layer over the...
US20090160026 Nitride semiconductor free-standing substrate and method for making same  
A nitride semiconductor free-standing substrate includes a nitride semiconductor crystal and an inversion domain with a density of not less than 10/cm2 and not more than 600/cm2 in a section...
US20090001519 GROWTH OF PLANAR, NON-POLAR, GROUP-III NITRIDE FILMS  
Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.
US20070141814 PROCESS FOR PRODUCING A FREE-STANDING III-N LAYER, AND FREE-STANDING III-N SUBSTRATE  
A process for producing a free-standing III-N layer, where III denotes at least one element from group III of the periodic system, selected from Al, Ga and In, comprises depositing on a...
US20070178671 GaN bulk growth by Ga vapor transport  
GaN is grown by creating a Ga vapor from a powder, and using an inert purge gas from a source to transport the vapor to a growth site where the GaN growth takes place. In one embodiment, the inert...
US20120295425 METHODS OF FABRICATING DEVICES BY LOW PRESSURE COLD WELDING  
Methods of transferring a metal and/or organic layer from a patterned stamp, preferably a soft, elastomeric stamp, to a substrate are provided. The patterned metal or organic layer may be used for...
US20130288462 TELLURIUM COMPOUNDS USEFUL FOR DEPOSITION OF TELLURIUM CONTAINING MATERIALS  
Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such...
US20090085065 METHOD TO FABRICATE III-N SEMICONDUCTOR DEVICES ON THE N-FACE OF LAYERS WHICH ARE GROWN IN THE III-FACE DIRECTION USING WAFER BONDING AND SUBSTRATE REMOVAL  
A method for fabricating III-N semiconductor devices on the N-face of layers comprising (a) growing a III-nitride semiconductor device structure in a Ga-polar direction on a substrate, (b)...
US20140308802 METHOD OF MAKING A MULTICOMPONENT FILM  
Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a...
US20090101935 NITRIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING SAME  
A nitride semiconductor includes: a substrate having a major surface including a first crystal polarity surface and a second crystal polarity surface different from the first crystal polarity...
US20060003556 Method of growing semi-insulating GaN layer  
Disclosed herein is a method for growing a semi-insulating GaN layer with high sheet resistance by controlling the size of grains through changes in growth temperature at the initial growth stage...
US20070077734 Thin buffer layers for SiGe growth on mismatched substrates  
Growth of SiGe on a significantly lattice mismatched substrate (e.g., Si) is provided by depositing a SiGe buffer layer at a growth temperature, then annealing the resulting structure at a...
US20090072353 METHOD FOR INCREASING THE AREA OF NON-POLAR AND SEMI-POLAR NITRIDE SUBSTRATES  
A method for fabricating a high quality freestanding nonpolar and semipolar nitride substrate with increased surface area, comprising stacking multiple films by growing the films one on top of...
US20090256165 METHOD OF GROWING AN ACTIVE REGION IN A SEMICONDUCTOR DEVICE USING MOLECULAR BEAM EPITAXY  
A method of making an (Al, Ga, In)N semiconductor device having a substrate and an active region is provided. The method includes growing the active region using a combination of (i)...
US20060228870 Method of making group III-V nitride-based semiconductor crystal  
A method of making a group III-V nitride-based semiconductor crystal has: a first step of providing a first semiconductor crystal substrate; a second step of growing a first group III-V...
US20060035446 Apparatus of catalytic molecule beam epitaxy and process for growing III-nitride materials using the apparatus  
This invention relates to an apparatus of catalytic molecule beam epitaxy (cat-MBE) and process for growing Group III nitride materials using thereof, characteristically in that said apparatus is...
US20080283874 Field-Effect Transistors  
The present invention provides a field-effect transistor and method for the fabrication of a field-effect transistor by deposition on a substrate (480), which method comprises a wet chemical...
US20130157447 SINGLE CRYSTAL SILICON TFTS MADE BY LATERAL CRYSTALLIZATION FROM A NANOWIRE SEED  
A method can include depositing a thin metal film on a substrate of a sample, establishing a metal island on the substrate by patterning the thin metal film, and annealing the sample to de-wet the...
US20150206743 SILICON CARBIDE EPITAXY  
A method comprises providing a monocrystalline silicon wafer (11) having a principal surface (17) which supports a masking layer (24), for example silicon dioxide or polycrystalline silicon,...
US20090079034 NON-POLAR III-V NITRIDE SEMICONDUCTOR AND GROWTH METHOD  
A method for growing flat, low defect density, and strain-free thick non-polar III-V nitride materials and devices on any suitable foreign substrates using a fabricated nanocolumns compliant layer...
US20060154455 Gallium nitride-based devices and manufacturing process  
A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a...
US20070155138 Apparatus and method for depositing silicon germanium films  
A new model is provided for the CVD growth of silicon germanium from silicon-containing and germanium-containing precursors. According to the new model, the germanium concentration x is related to...
US20070176199 Nitride-based group III-V semiconductor substrate and fabrication method therefor, and nitride-based group III-V light-emitting device  
A nitride-based group III-V semiconductor substrate has an as-grown surface on the surface thereof; and a flat surface on the back surface of the substrate. The c-axis of a nitride-based group...
US20050287772 Process for producing a web of a semiconductor material  
Process for producing a web of a semiconductor material The invention relates to a process for producing two webs of a semiconductor material, in which a sacrificial web of a first material is...
US20100120235 METHODS FOR FORMING SILICON GERMANIUM LAYERS  
Embodiments of methods for depositing silicon germanium (SiGe) layers on a substrate are disclosed herein. In some embodiments, the method includes depositing a silicon germanium seed layer atop...
US20080303035 COMPOUND SEMICONDUCTOR FILM, LIGHT EMITTING FILM, AND MANUFACTURING METHOD THEREOF  
Provided are a compound semiconductor film which is manufactured at a low temperature and exhibits excellent p-type conductivity, and a light emitting film in which the compound semiconductor film...
US20070048977 Method of depositing Ge-Sb-Te thin film  
There is provided a method of depositing a Ge—Sb—Te thin film, including: a Ge—Sb—Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second...
US20080296616 Gallium nitride-on-silicon nanoscale patterned interface  
A method is provided for forming a matching thermal expansion interface between silicon (Si) and gallium nitride (GaN) films. The method provides a (111) Si substrate that is heated to a...
US20110156043 THIN FILM TRANSISTOR  
A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is...
US20080119025 Method of making a strained semiconductor device  
In a method of making a semiconductor device, a recess is formed in an upper surface of the semiconductor body of a first material. An embedded semiconductor region is formed in the recess. The...
US20090146183 Method of forming a germanium silicide layer, semiconductor device including the germanium silicide layer, and method of manufacturing the semiconductor device  
Example embodiments relate to a method of forming a germanium (Ge) silicide layer, a semiconductor device including the Ge silicide layer, and a method of manufacturing the semiconductor device. A...
US20070072399 Semiconductor Devices Having Epitaxial Layers with Suppressed Lateral Growth and Related Methods of Manufacturing Such Devices  
Semiconductor devices are provided having a selective epitaxial growth layer that exhibits suppressed lateral growth. These semiconductor devices may include a semiconductor substrate having a...
US20100075458 FILM DEPOSITION OF AMORPHOUS FILMS WITH A GRADED BANDGAP BY ELECTRON CYCLOTRON RESONANCE  
A method is described of forming a film of an amorphous material on a substrate (14) by deposition from a plasma. The substrate (14) is placed in an enclosure, a film precursor gas is introduced...
US20080251801 METHOD OF PRODUCING GROUP III-V COMPOUND SEMICONDUCTOR, SCHOTTKY BARRIER DIODE, LIGHT EMITTING DIODE, LASER DIODE, AND METHODS OF FABRICATING THE DIODES  
There are provided a method of producing a group III-V compound semiconductor, a Schottky barrier diode, a light emitting diode, a laser diode and methods of fabricating the diodes, that can...
US20080157102 SEMICONDUCTOR LAYERED STRUCTURE AND ITS METHOD OF FORMATION, AND LIGHT EMITTING DEVICE  
In formation of a quantum dot structure in a light emitting layer, a matrix region (an n-type conductive layer and matrix layers) is formed on a growth underlying layer of AlN whose abundance...
US20090034567 METHOD OF MANUFACTURING SEMICONDUCTOR LASER, SEMICONDUCTOR LASER, OPTICAL PICKUP, OPTICAL DISK DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF GROWING NITRIDE TYPE GROUP III-V COMPOUND SEMICONDUCTOR LAYER  
A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer...
US20080258133 Semiconductor Device and Method of Fabricating the Same  
Disclosed is a semiconductor device. The semiconductor device includes a first type nitride-based cladding layer formed on a growth substrate having an insulating property, a multi quantum well...
US20080105955 Method For Epitaxial Growth of (110)-Oriented SrTiO3 Thin Films on Silicon Without Template  
A process and structure utilizes pulsed laser deposition technique to grow SrTiO3 (STO) films with single (110) out-of-plane orientation upon a surface of all (100), (110) and (111)-oriented...
US20080029756 Semiconductor buffer architecture for III-V devices on silicon substrates  
A composite buffer architecture for forming a III-V device layer on a silicon substrate and the method of manufacture is described. Embodiments of the present invention enable III-V InSb device...
US20090127664 GROUP III NITRIDE SEMICONDUCTOR CRYSTAL GROWING METHOD, GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE FABRICATION METHOD, AND GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE  
A growing method of a group III nitride semiconductor crystal includes the steps of preparing an underlying substrate, and growing a first group III nitride semiconductor crystal doped with...
US20100136770 GROUP-III METAL NITRIDE AND PREPARATION THEREOF  
A method for forming a group-III metal nitride material film attached to a substrate including subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and heating the substrate...
US20090085165 Group 3-5 Nitride Semiconductor Multilayer Substrate, Method for Manufacturing Group 3-5 Nitride Semiconductor Free-Standing Subtrate, and Semiconductor Element  
A group 3-5 nitride semiconductor multilayer substrate (1) and a method for manufacturing such substrate are provided. A semiconductor layer (12) is formed on a base substrate (11), and a mask...
US20090008652 Free-Standing Substrate, Method for Producing the Same and Semiconductor Light-Emitting Device  
The present invention provides a free-standing substrate, a method for producing the same and a semiconductor light-emitting device. The free-standing substrate comprises a semiconductor layer and...
US20090130781 METHOD FOR SIMULTANEOUSLY PRODUCING MULTIPLE WAFERS DURING A SINGLE EPITAXIAL GROWTH RUN AND SEMICONDUCTOR STRUCTURE GROWN THEREBY  
HVPE method for simultaneously fabricating multiple Group III nitride semiconductor structures during a single reactor run. A HVPE reactor includes a reactor tube, a growth zone, a heating element...
US20070134834 Method of manufacturing vertical gallium nitride based light emitting diode  
A method of manufacturing a vertical GaN-based LED includes forming a nitride-based buffer layer on a silicon substrate; sequentially forming a p-type GaN layer, an active layer, and an n-type GaN...
US20100032812 Method for forming silicon germanium layers at low temperatures, layers formed therewith and structures comprising such layers  
A method is provided for controlling the average stress and the strain gradient in structural silicon germanium layers as used in micromachined devices. The method comprises depositing a single...
US20080188062 Method of forming microcrystalline silicon film  
A method capable of making a semiconductor device in a plasma-assisted chemical vapor deposition (CVD) system including a chamber having a first electrode and a second electrode spaced apart from...

Matches 1 - 50 out of 130 1 2 3 >