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US20120040511 AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AND METHOD OF PRODUCING SAME  
Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1−x−yN (0≦x≦1, 0≦y≦1, 0
US20070190752 Si ribbon, SiO2 ribbon and ultra pure ribbons of other substances  
A method of purifying substances is described herein, particularly suitable for purifying silica and forming it into silicon oxide sheets or ribbons, or silicon sheets or ribbons. The method...
US20120178240 Thermal Budget Optimization for Yield Enhancement on Bulk Silicon Wafers  
A method of nucleating and growing oxygen precipitates of sufficient concentration and size in lightly doped p-type wafers for effective gettering of heavy metals is deep submicron transistor,...
US20070272990 DIFFUSION TUBE, DOPANT SOURCE FOR A DIFFUSION PROCESS AND DIFFUSION METHOD USING THE DIFFUSION TUBE AND THE DOPANT SOURCE  
According to an exemplary embodiment of the present invention, a diffusion tube includes a diffusion housing which includes a first cavity within a first end which receives a diffusion target, a...
US20050255677 Integrated circuit with impurity barrier  
An integrated circuit with an interface between a semiconductor layer (having a selected region) and a second layer has a barrier with a gettering effect that 1) substantially circumscribes the...
US20070093030 Reduction of boron diffusivity in pfets  
A stressed film applied across a boundary defined by a structure or a body (e.g. substrate or layer) of semiconductor material provides a change from tensile to compressive stress in the...
US20110227202 SILICON WAFER AND FABRICATION METHOD THEREOF  
A silicon wafer and fabrication method thereof are provided. The silicon wafer includes a first denuded zone formed with a predetermined depth from a top surface of the silicon wafer, the first...
US20120122300 FILM STRESS MANAGEMENT FOR MEMS THROUGH SELECTIVE RELAXATION  
An apparatus comprising a microelectromechanical system. The microelectromechanical system includes a crystalline structural element having dislocations therein. For at least about 60 percent of...
US20100038755 SILICON WAFER WITH CONTROLLED DISTRIBUTION OF EMBRYOS THAT BECOME OXYGEN PRECIPITATES BY SUCCEEDING ANNEALING AND ITS MANUFACTURING METHOD  
A method for making a silicon wafer includes the steps of generating and stabilizing embryos that become oxygen precipitates by succeeding thermal annealing applied during a semiconductor device...
US20050085053 Method of activating a getter structure  
A method of activating a getter structure, including illuminating a photomask having a transmissive region substantially aligned with the getter structure, transmitting a portion of the photons...
US20130045586 Process Of Internal Gettering For Czochralski Silicon Wafer  
An internal gettering process for a Czochralski silicon wafers comprises: (1) heating a Cz silicon wafer to 1200-1250° C. at a heating rate of 50-100° C./s under a nitrogen atmosphere, maintaining...
US20120168911 SILICON WAFER STRENGTH ENHANCEMENT  
Provided is a method of fabricating a semiconductor device. The method includes: receiving a silicon wafer that contains oxygen; forming a zone in the silicon wafer, the zone being substantially...
US20090278239 Silicon Wafer and Production Method Thereof  
In a silicon wafer having an oxygen precipitate layer, a depth of DZ layer ranging from a wafer surface to an oxygen precipitate layer is 2 to 10 μm and an oxygen precipitate concentration of the...
US20090294806 Method of Improving Minority Lifetime in Silicon Channel and Products Thereof  
Performance of field effect transistors and other channel dependent devices formed on a monocrystalline substrate is improved by carrying out a high temperature anneal in a nitrogen releasing...
US20050090078 Processing apparatus and method  
A processing method that uses process gas plasma that contains at least hydrogen to terminate dangling bonds in an object that at least partially contains a silicon system material includes the...
US20090195296 Method for Recovering an On-State Forward Voltage and, Shrinking Stacking Faults in Bipolar Semiconductor Devices, and the Bipolar Semiconductor Devices  
In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time...
US20110140246 DELTA-DOPING AT WAFER LEVEL FOR HIGH THROUGHPUT, HIGH YIELD FABRICATION OF SILICON IMAGING ARRAYS  
Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove...
US20060130736 Methods for manufacturing silicon wafer and silicon epitaxial wafer, and silicon epitaxial wafer  
There is provided a method for manufacturing a silicon wafer or a silicon epitaxial wafer capable of imparting an excellent IG capability thereto in a stable manner by simultaneously realizing...
US20130102129 PROCESSES FOR SUPPRESSING MINORITY CARRIER LIFETIME DEGRADATION IN SILICON WAFERS  
Processes for suppressing minority carrier lifetime degradation in silicon wafers are disclosed. The processes involve quench cooling the wafers to increase the density of nano-precipitates in the...
US20060009011 Method for recycling/reclaiming a monitor wafer  
The present invention provides a method for recycling/reclaiming a monitor wafer and a method for testing a manufacturing process. The method for recycling/reclaiming the monitor wafer, among...
US20080197457 SILICON WAFER AND ITS MANUFACTURING METHOD  
A silicon wafer which achieves a gettering effect without occurrence of slip dislocations is provided, and the silicon wafer is subject to heat treatment after slicing from a silicon monocrystal...
US20090256240 METHOD FOR PRODUCING GROUP III-NITRIDE WAFERS AND GROUP III-NITRIDE WAFERS  
The present invention discloses a production method for group III nitride ingots or pieces such as wafers. To solve the coloration problem in the wafers grown by the ammonothermal method, the...
US20120199956 METHOD FOR RECYCLING A SOURCE SUBSTRATE  
The present invention relates to process for recycling a source substrate that has a surface region and regions in relief on the surface region, with the regions in relief corresponding to...
US20050239267 Substrate manufacturing method  
A substrate manufacturing method includes steps of preparing a bonded substrate stack formed by bonding a second substrate to a first substrate having an insulator at least on a surface, forming a...
US20090162995 Semiconductor Device Manufacturing Method and Semiconductor Manufacturing Apparatus  
By hydrogen-terminating a semiconductor surface using a solution containing HF2− ions and an oxidant, the hydrogen termination can be quickly carried out. In this case, the semiconductor surface...
US20100090303 SOI SUBSTRATE AND METHOD FOR PRODUCING THE SAME, SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR PRODUCING THE SAME, AND IMAGE PICKUP APPARATUS  
A SOI substrate includes a silicon substrate, a silicon oxide layer arranged on the silicon substrate, a silicon layer arranged on the silicon oxide layer, a gettering layer arranged in the...
US20080254599 Thermal Processing of Silicon Wafers  
Apparatus and methods that minimize surface defect development in silicon wafers during thermal processing at relatively high temperatures at which silicon wafers are annealed and at less extreme...
US20090197049 METHOD FOR DRY CHEMICAL TREATMENT OF SUBSTRATES AND ALSO USE THEREOF  
The invention relates to a method for dry chemical treatment of substrates selected from the group comprising silicon, ceramic, glass, and quartz glass, in which the substrate is treated in a...
US20140220766 PLANAR SEMICONDUCTOR GROWTH ON III-V MATERIAL  
A semiconductor structure includes a III-V monocrystalline layer and a germanium surface layer. An interlayer is formed directly between the III-V monocrystalline layer and the germanium surface...
US20140217468 PLANAR SEMICONDUCTOR GROWTH ON III-V MATERIAL  
A semiconductor structure includes a III-V monocrystalline layer and a germanium surface layer. An interlayer is formed directly between the III-V monocrystalline layer and the germanium surface...
US20050130394 Process for implementing oxygen into a silicon wafer having a region which is free of agglomerated intrinsic point defects  
The present invention relates to a process for the preparation of a silicon on insulator wafer. The process includes implanting oxygen into a single crystal silicon wafer which is substantially...
US20100038757 SILICON WAFER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR HEAT-TREATING THE SAME  
A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T1) of 1300° C. or more,...
US20080233716 Method for fabricating semiconductor device  
The principal objects of the present invention are to provide structure of a semiconductor device capable of reducing a bowing of a wafer, and a method for fabricating the semiconductor device....
US20070066033 Process for producing high-resistance silicon wafers and process for producing epitaxial wafers and soi wafers (as amended)  
By using oxygen-containing silicon wafers obtained by the CZ method and by combining the first heat treatment comprising controlled heat-up operation (ramping) with the second heat treatment...
US20090252944 SILICON WAFER AND PRODUCTION METHOD THEREOF  
A silicon wafer is produced by subjecting a back face of a silicon wafer after the formation of a device structure to a given surface treatment so as to form a gettering sink layer having a good...
US20120070961 LOW TEMPERATURE ETCHANT FOR TREATMENT OF SILICON-CONTAINING SURFACES  
Embodiments provide methods for etching and depositing silicon materials on a substrate. In one example, the method includes heating a substrate containing a silicon-containing material to a...
US20100295061 RECRYSTALLIZATION OF SEMICONDUCTOR WATERS IN A THIN FILM CAPSULE AND RELATED PROCESSES  
An original wafer, typically silicon, has the form of a desired end PV wafer. The original may be made by rapid solidification or CVD. It has small grains. It is encapsulated in a clean thin film,...
US20080044986 METHOD FOR IMPROVED DIELECTRIC PERFORMANCE  
A method of decreasing the density of dielectric interface traps in an integrated circuit device. In accordance with the teachings of the present invention, the method includes providing a...
US20080003782 Multilayer gettering structure for semiconductor device and method  
In one embodiment, a multi-layer extrinsic gettering structure includes plurality of polycrystalline semiconductor layers each separated by a dielectric layer.
US20070178668 Epitaxial wafer and method for producing epitaxial wafers  
This disclosure is aimed at providing a method for producing an epitaxial wafer allowing uniform occurrence of oxygen precipitate in a substrate plane in the radial direction in a base plate and...
US20070155134 Annealed wafer and manufacturing method of annealed wafer  
An annealed wafer in which oxygen precipitation is uniform in the substrate plane and a manufacturing method thereof are provided. A nitrogen-doped silicon single crystal substrate pulled at the...
US20120220084 METHOD OF FABRICATING POLYCRYSTALLINE SILICON LAYER, TFT FABRICATED USING THE SAME, METHOD OF FABRICATING TFT, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE SAME  
A method of fabricating a polycrystalline silicon layer includes: forming an amorphous silicon layer on a substrate; crystallizing the amorphous silicon layer into a polycrystalline silicon layer...
US20090102024 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SAME  
A semiconductor device has an IC chip with a thickness of equal to or less than 100 μm and includes a semiconductor substrate. A device forming region is within the depth of approximately equal to...
US20050245052 Semiconductor device having a gettering layer  
A multi-chip-package (MCP) module includes a plurality of semiconductor chips layered one on another. The lower semiconductor chip includes a semiconductor substrate having a top active layer and...
US20150206765 Mechanical Compression-Based Method for the Reduction of Defects in Semiconductors  
A high pressure-directed engineering method enables reduced defect semiconductor materials that are unattainable by other chemical and physical methods. Experimental results show that hydraulic...
US20090130823 METHOD OF FORMING SEMICONDUCTOR DEVICE INCLUDING TRENCH GATE STRUCTURE  
A method of forming a semiconductor device is provided, which may include, but is not limited to, the following processes. Grooves may be formed in an insulating region and in a semiconductor...
US20140335680 MULTI-LAYER AMORPHOUS SILICON STRUCTURE WITH IMPROVED POLY-SILICON QUALITY AFTER EXCIMER LASER ANNEAL  
The embodiments described herein generally relate to methods for forming a multi-layer amorphous silicon structure that may be used in thin film transistor devices. In one embodiment, a method...
US20130256700 SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING THEM  
A silicon carbide substrate has a first main surface, and a second main surface opposite to the first main surface. A region including at least one main surface of the first and second main...
US20110186818 Doped graphene electronic materials  
A graphene substrate is doped with one or more functional groups to form an electronic device.
US20100148297 SEMICONDUCTOR SUBSTRATE FOR SOLID-STATE IMAGE SENSING DEVICE AS WELL AS SOLID-STATE IMAGE SENSING DEVICE AND METHOD FOR PRODUCING THE SAME  
There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and...

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