|
Match
|
Document |
Document Title |
|
|
US20090321781 |
QUANTUM DOT DEVICE AND METHOD OF MAKING THE SAME
A semiconductor device includes an Al x Ga y In 1-x-y N layer and (Al,Ga,In)N quantum dots disposed on the Al x Ga y In 1-x-y N layer, wherein the indium fraction in the Al x Ga y In 1-x-y N layer...
|
|
|
US20090315019 |
Optical device having a quantum-dot structure
Method of manufacturing an optical device, and an optical device, the optical device having one or more layers ( 13 ) of quantum-dots located in-between barrier layers ( 12 ). A spacer layer ( 15 )...
|
|
|
US20090315046 |
GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP
The present invention provides a group-III nitride compound semiconductor light-emitting device having high productivity and good emission characteristics, a method of manufacturing a group-III...
|
|
|
US20090302335 |
Method of Fabricating Light Emitting Device and Compound Semiconductor Wafer and Light Emitting Device
A Metal Organic Vapor Phase Epitaxy step of growing a light emitting layer section 24, composed of a first Group III-V compound semiconductor, epitaxially on a single crystal growth substrate 1 ...
|
|
|
US20090298212 |
Silicon Based Solid State Lighting
A semiconductor device includes a substrate comprising a first surface having a first orientation and a second surface having a second orientation and a plurality of III-V compound layers on the...
|
|
|
US20090298214 |
METHOD OF GROWING NITRIDE SINGLE CRYSTAL AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
There is provided a method of growing a nitride single crystal. A method of growing a nitride single crystal according to an aspect of the invention may include: growing a first nitride single...
|
|
|
US20090290611 |
SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREFOR
A semiconductor laser comprises: a ridge structure including a p-type cladding layer, an active layer, and an n-type cladding layer stacked on one another; and a burying layer burying sides of the...
|
|
|
US20090291519 |
LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super...
|
|
|
US20090280592 |
Nanoparticle structure and manufacturing process of multi-wavelength light emitting devices
A structure of multi-wavelength light emitting device comprises multi-stacked active layer structure. Each stacked layer comprises lower energy bandgap well 4 and higher energy bandgap barrier...
|
|
|
US20090272972 |
ZnO BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURE METHOD
A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnO 1-x1 S x1 ; a second semiconductor layer formed above the first semiconductor layer and...
|
|
|
US20090275161 |
LIGHT-EMITTING ELEMENT AND LIGHT EMITTING DEVICE USING THE SAME
The present invention provides a light-emitting element having less increase in driving voltage with the accumulation of light-emission time, and provides a light-emitting element having less...
|
|
|
US20090268768 |
METHOD OF MAKING NITRIDE SEMICONDUCTOR LASER, METHOD OF MAKING EPITAXIAL WAFER, AND NITRIDE SEMICONDUCTOR LASER
A method of making a nitride semiconductor laser comprises forming a first InGaN film for an active layer on a gallium nitride based semiconductor region, and the first InGaN film has a first...
|
|
|
US20090267049 |
Plasmon Enhanced Nanowire Light Emitting Diode
A nanowire light emitting diode (LED) and method of emitting light employ a plasmonic mode. The nanowire LED includes a nanowire having a semiconductor junction, a shell layer coaxially surrounding...
|
|
|
US20090269867 |
METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR ELEMENT
The present invention provides a method of manufacturing a nitride semiconductor capable of improving the crystallinity and the surface state of the nitride semiconductor crystal formed on top of a...
|
|
|
US20090263925 |
NITRIDE-BASED LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based...
|
|
|
US20090245308 |
ACTIVE SOLID HEATSINK DEVICE AND FABRICATING METHOD THEREOF
An active solid heatsink device and fabricating method thereof is related to a high-effective solid cooling device, where heat generated by a heat source with a small area and a high...
|
|
|
US20090242870 |
LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super...
|
|
|
US20090245311 |
PROCESS FOR PRODUCING NITRIDE SEMICONDUCTOR LASER, AND NITRIDE SEMICONDUCTOR LASER
Provided are a process for producing a nitride semiconductor laser that is a process applied to materials wherein a diffusion of an impurity is not easily attained, such as nitride semiconductor...
|
|
|
US20090236584 |
LIGHT-EMITTING DEVICE WITH ENHANCED LUMINOUS EFFICIENCY AND METHOD OF PRODUCING THE SAME
A light-emitting device comprises first and second dot members. The first dot member is formed so that it makes contact with the second dot member. The first dot member comprises a plurality of...
|
|
|
US20090230878 |
GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT ASSEMBLY, LIGHT-EMITTING APPARATUS, METHOD OF MANUFACTURING GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF DRIVING GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND IMAGE DISPLAY APPARATUS
A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of...
|
|
|
US20090224240 |
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THEREFOR
A semiconductor light emitting element of the present invention comprises: a zinc oxide (ZnO) single crystal substrate 12 with a substrate surface of a plane orientation insusceptible to a piezo...
|
|
|
US20090224269 |
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME, AND EPITAXIAL WAFER
A semiconductor light emitting device includes: an upper growth layer including a light emitting layer; a transparent substrate through which a radiant light from the light emitting layer passes;...
|
|
|
US20090212277 |
GROUP-III NITRIDE LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING GROUP-III NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE
A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well...
|
|
|
US20090212276 |
LIGHT-EMITTING DIODE DEVICE AND A FABRICATION METHOD THEREOF
The present invention provides a light-emitting diode (LED) device and a fabrication method thereof. The LED device has a double-layered contact layer structure with a surface of one contact layer...
|
|
|
US20090206320 |
GROUP III NITRIDE WHITE LIGHT EMITTING DIODE
A white light-emitting diode is fabricated by metal organic chemical vapor deposition (MOCVD), which can produce a broad band emission covering all the visible range in the spectrum by capping the...
|
|
|
US20090209055 |
Method to fabricate semiconductor optical device
A process for the semiconductor laser diode is disclosed, which prevents the abnormal growth occurred at the second growth for the burying region of the buried hetero structure. The ICP...
|
|
|
US20090194761 |
ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODES BY INCREASED INDIUM INCORPORATION
An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light...
|
|
|
US20090180508 |
TWO-WAVELENGTH SEMICONDUCTOR LASER DEVICE AND ITS FABRICATING METHOD
A two-wavelength semiconductor laser device includes a first semiconductor laser device including a first-conductivity type first cladding layer, a first guide layer made of AlGaAs mixed crystal, a...
|
|
|
US20090179189 |
METHOD FOR PRODUCING AN ELECTRONIC DEVICE WITH A LAYER STRUCTURE AND AN ELECTRONIC DEVICE
The invention relates to a method for producing a layer structure in an electronic device, especially in an organic light emitting device, the method comprising a step of producing the layer...
|
|
|
US20090173956 |
CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE
An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region...
|
|
|
US20090166650 |
LIGHT-EMITTING DEVICE OF GROUP III NITRIDE-BASED SEMICONDUCTOR AND MANUFACTURING METHOD THEREOF
A light-emitting device of Group III nitride-based semiconductor comprises a substrate, a first Group III nitride layer and a second Group III nitride layer. The substrate comprises a first surface...
|
|
|
US20090159869 |
Solid State Light Emitting Device
A semiconductor structure ( 10, 10′, 70, 80 ) includes a light emitter ( 12, 72 ) carried by a support structure ( 11 ). The light emitter ( 12, 72 ) includes a base region ( 24, 76 ) with a...
|
|
|
US20090155987 |
METHOD OF FABRICATING GALLIUM NITRIDE SUBSTRATE
A method of fabricating a gallium nitride (GaN) substrate provides a GaN thick film without causing bending and cracks which may occur in a growing process. To this end, a nitride embedding layer...
|
|
|
US20090134410 |
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
There is provided a method of manufacturing a nitride semiconductor light emitting device. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the...
|
|
|
US20090121214 |
III-NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor light-emitting device comprises a substrate, a buffer layer, an n-type semiconductor layer, a conformational active layer and a p-type semiconductor layer. The n-type semiconductor...
|
|
|
US20090121242 |
COMPOUND SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF
A compound semiconductor light-emitting diode includes a light-emitting layer formed of aluminum-gallium-indium phosphide, a light-emitting part 13 having component layers individually formed of...
|
|
|
US20090114933 |
GaN BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND LAMP
A method for producing a gallium nitride based compound semiconductor light emitting device which is excellent in terms of the light emitting properties and the light emission efficiency and a lamp...
|
|
|
US20090101886 |
SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FABRICATING THE SAME
The invention discloses a semiconductor light-emitting device. The semiconductor light-emitting device includes a substrate, a first semiconductor material layer, a light-emitting layer, a second...
|
|
|
US20090098677 |
GROUP III-V NITRIDE-BASED SEMICONDUCTOR SUBSTRATE, GROUP III-V NITRIDE-BASED DEVICE AND METHOD OF FABRICATING THE SAME
A group III-V nitride-based semiconductor substrate has: a first layer made of GaN single crystal; and a second layer formed on the first layer, the second layer made of group III-V nitride-based...
|
|
|
US20090090922 |
METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP
Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (Vf) and high light outcoupling efficiency, a gallium...
|
|
|
US20090090923 |
METHOD FOR MANUFACTURING A SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE
A semiconductor light-emitting device and method for manufacturing the semiconductor light-emitting device includes a mask layer etching process on first and second mask layers provided on a...
|
|
|
US20090078947 |
SEMICONDUCTOR LIGHT EMITTING DEVICE
An end face emission type semiconductor light emitting device which include: a substrate; a first conductive type clad layer stacked on the substrate; an active region layer including an active...
|
|
|
US20090072220 |
Nitride Semiconductor LED and Fabrication Method Thereof
A nitride semiconductor light emitting diode according to the present invention, includes: a substrate; a buffer layer formed on the substrate; an In-doped GaN layer formed on the buffer layer; a...
|
|
|
US20090072252 |
Nitride Semiconductor Light Emitting Device and Fabrication Method Therefor
Disclosed is a nitride semiconductor light emitting device including: one or more AllnN layers; an In-doped nitride semiconductor layer formed above the AllN layers; a first electrode contact layer...
|
|
|
US20090074355 |
Photonically-coupled nanoparticle quantum systems and methods for fabricating the same
Various embodiments of the present invention are directed to photonically-coupled quantum dot systems. In one embodiment of the present invention, a photonic device comprises a top layer, a bottom...
|
|
|
US20090068779 |
Method for manufacturing nitride semiconductor device
There is provided a method for manufacturing a nitride semiconductor device which has a p-type nitride semiconductor layer having a high carrier concentration (low resistance) by activating an...
|
|
|
US20090068780 |
METHOD OF FABRICATING SEMICONDUCTOR OPTOELECTRONIC DEVICE AND RECYCLING SUBSTRATE DURING FABRICATION THEREOF
The invention discloses a method of fabricating a semiconductor optoelectronic device. First, a substrate is prepared. Subsequently, a buffer layer is deposited on the substrate. Then, a...
|
|
|
US20090050914 |
SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH SELECTIVELY FORMED BUFFER LAYER ON SUBSTRATE
The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a buffer...
|
|
|
US20090050915 |
Group III-V nitride semiconductor substrate and method for producing same
A group III-V nitride semiconductor substrate includes a first region of group III-V nitride semiconductor crystal grown on a facet on a heterosubstrate, and a second region of the group III-V...
|
|
|
US20090045419 |
Semiconductor light-emitting device with high light-extraction efficiency and method for fabricating the same
The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a first...
|