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US20090302421 Method and apparatus for creating a deep trench capacitor to improve device performance  
A deep trench capacitor includes a trench having walls and a floor. The deep trench capacitor also includes a layer of gate oxide on the walls and floor. Gate polysilicon is deposited over the gate...
US20090302419 METHOD OF MODIFYING SURFACE AREA AND ELECTRONIC DEVICE  
In the method a first layer, particularly of amorphous silicon, is deposited on the surface of a substrate with trenches. Part of this surface is covered with a protective layer. The first layer is...
US20090294907 SEMICONDUCTOR COMPONENT WITH MIM CAPACITOR  
A structure and method of forming a capacitor is described. In one embodiment, the capacitor includes a cylindrical first electrode having an inner portion bounded by a bottom surface and an inner...
US20090289324 MASK OVERHANG REDUCTION OR ELIMINATION AFTER SUBSTRATE ETCH  
A method of forming IC devices includes providing a substrate and forming a patterned masking layer including at least one masked region having at least one masking layer, and a feature region...
US20090289291 SOI DEEP TRENCH CAPACITOR EMPLOYING A NON-CONFORMAL INNER SPACER  
A bottle shaped trench for an SOI capacitor is formed by a simple processing sequence. A non-conformal dielectric layer with an optional conformal dielectric diffusion barrier layer underneath is...
US20090280617 FABRICATING PROCESS FOR SUBSTRATE WITH EMBEDDED PASSIVE COMPONENT  
A fabricating process for a substrate with an embedded passive component is provided. The fabricating process includes the following steps. First, a substrate including a top conductive layer, a...
US20090273882 CAPACITOR AND METHOD FOR FABRICATING THE SAME  
A capacitor includes a first electrode, a dielectric layer, and a second electrode. The capacitor also includes a buffer layer formed over at least one of an interface between the first electrode...
US20090267186 SEMICONDUCTOR STRUCTURE INCLUDING TRENCH CAPACITOR AND TRENCH RESISTOR  
A structure and a method for fabrication of the structure use a capacitor trench for a trench capacitor and a resistor trench for a trench resistor. The structure is typically a semiconductor...
US20090267183 Through-substrate power-conducting via with embedded capacitance  
When integrated circuits are mounted on a substrate, little space is often available for the required large number of bypass capacitors. A novel substrate structure therefore includes many closely...
US20090261897 Applying trenched transient voltage suppressor (TVS) technology for distributed low pass filters  
An electronic circuit includes a filtering circuit implemented with a distributed inductor-and-capacitor (LC) network that includes metal oxide effect (MOS) trenches opened in a semiconductor...
US20090258469 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE  
In a method of manufacturing a semiconductor device, a carbon-containing film having electrical conductivity is formed so as to cover a first insulating film, a discharge plug and a conductor plug....
US20090258470 Method of Manufacturing a Semiconductor Device Using an Atomic Layer Deposition Process  
Methods of manufacturing a semiconductor device include forming an absorption layer on a surface of a substrate by exposing the surface of the substrate to a first reaction gas at a first...
US20090250784 Structure and method for elimination of process-related defects in poly/metal plate capacitors  
An integrated circuit includes silicon layer ( 2 ) supported by a bottom oxide layer ( 3 ), a shallow trench oxide ( 4 ) in the shallow trench ( 30 ), and a polycrystalline silicon layer ( 5 ) on...
US20090250787 SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD OF THE SAME  
A semiconductor storage device includes: a first conductive adhesive layer selectively formed over a semiconductor substrate; an insulating film formed on the semiconductor substrate to cover the...
US20090242954 MEMORY DEVICE AND FABRICATION THEREOF  
The invention is related to a memory device, including a substrate, a capacitor which is substantially C-shaped in a cross section parallel to the substrate surface and a word line coupling the...
US20090236691 DEEP TRENCH (DT) METAL-INSULATOR-METAL (MIM) CAPACITOR  
A deep trench metal-insulator-metal (MIM) capacitor in an SOI-type substrate. In the deep trench, a layer of TiN, followed by a layer of high-k dielectric, followed by a second layer of TiN. The...
US20090221126 Method of Fabricating Capacitor of Semiconductor Device  
Disclosed herein is a method of fabricating a capacitor of a semiconductor device that includes sequentially forming an interlayer insulating film defining a contact plug, a lower electrode oxide...
US20090206448 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor device that prevents the leaning of storage node when forming a capacitor having high capacitance includes a plurality of cylinder-shaped storage nodes formed over a semiconductor...
US20090197384 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE  
According to an aspect of the present invention, there is provided a semiconductor memory device. The semiconductor memory device is provided with an insulator and a capacitor. The capacitor is...
US20090194844 SUBSTRATE CONTACT FOR ADVANCED SOI DEVICES BASED ON A DEEP TRENCH CAPACITOR CONFIGURATION  
By forming a first portion of a substrate contact in an SOI device on the basis of a trench capacitor process, the overall manufacturing process for patterning contact elements may be enhanced...
US20090191685 METHOD FOR FORMING CAPACITOR IN DYNAMIC RANDOM ACCESS MEMORY  
A method for forming a capacitor in a dynamic random access memory, comprising steps of: providing a semiconductor substrate having at least a transistor, whereon an interlayer dielectric layer...
US20090174031 DRAM HAVING DEEP TRENCH CAPACITORS WITH LIGHTLY DOPED BURIED PLATES  
By controlling buried plate doping level and bias condition, different capacitances can be obtained from capacitors on the same chip with the same layout and deep trench process. The capacitors may...
US20090166698 CAPACITOR AND METHOD OF MANUFACTURING THE SAME  
A capacitor with a mixed structure of a Metal Oxide Semiconductor (MOS) capacitor and a Poly-silicon Insulator Poly-silicon (PIP) capacitor includes a substrate and a diffusion junction region...
US20090170274 METHOD OF FORMING METAL TRENCH PATTERN IN THIN-FILM DEVICE  
A method of forming a metal trench pattern in a thin-film device includes a step of depositing an electrode film on a substrate or on a base layer, a step of forming a resist pattern layer having a...
US20090108405 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE  
A conductive film embedded in a predetermined region on an upper surface of an insulation film and metallic wirings embedded so as to penetrate through the conductive film and protrudes into the...
US20090104747 METHOD FOR FABRICATING DEEP TRENCH DRAM ARRAY  
A method for fabricating deep trench DRAM array is disclosed. A substrate having thereon a memory array area is provided. An array of deep trench patterns is formed in the memory array area. The...
US20090104748 METHOD FOR FABRICATING SELF-ALIGNED RECESS GATE TRENCH  
A method for forming a recess gate trench includes a plurality of trench capacitors formed into a substrate having thereon a pad layer. A portion of the trench top oxide layer of each trench...
US20090102582 RESONATOR DEVICE WITH SHORTED STUB AND MIM-CAPACITOR  
At microwave frequencies, the use of transmission lines as a design element becomes interesting due to the small wavelengths. Inductors as part of an on-chip resonator can be made with a shorted...
US20090101957 SIMPLIFIED METHOD OF FABRICATING ISOLATED AND MERGED TRENCH CAPACITORS  
Trench capacitors having small and large sizes can be formed simultaneously using a combined lithography process in which openings in a photomask have the same dimensions and spacings. Larger...
US20090090996 SEMICONDUCTOR DEVICE WITH CONTACT STABILIZATION BETWEEN CONTACT PLUGS AND BIT LINES AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor device includes a semiconductor substrate divided into a cell array region, a core region, and a peripheral region. Bit lines are formed in the respective regions. Storage node...
US20090085157 Manufacturing method for an integrated circuit, corresponding intermediate integrated circuit structure and corresponding integrated circuit  
The present invention provides a method of manufacturing integrated circuit including a plurality of pillars, comprising the steps of: forming a plurality of first trenches in a first layer...
US20090087957 Method of fabricating semiconductor device  
Photoresist on a metal is removed with less oxidation of the metal surface by the invented ashing. During process, the matching of oxygen gas ratio and wafer temperature under downstream plasma...
US20090079030 Forming SOI Trench Memory with Single-Sided Buried Strap  
A method of forming a trench memory cell includes forming a trench capacitor within a substrate material, the trench capacitor including a node dielectric layer formed within a trench and a...
US20090068814 Semiconductor Devices Including Capacitor Support Pads and Related Methods  
A semiconductor device may include a semiconductor substrate and a plurality of first capacitor electrodes arranged in a plurality of parallel lines on the semiconductor substrate with each of the...
US20090061589 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING CYLINDER-TYPE CAPACITOR STRUCTURE  
A method of manufacturing a semiconductor device includes forming an inter-layer insulating film; arranging a plurality of grooves in a surface layer of the inter-layer insulating film; forming...
US20090061588 METHOD FOR FABRICATING DYNAMIC RANDOM ACCESS MEMORY  
A method for fabricating a dynamic random access memory is provided. A substrate having two trench capacitors therein is provided, an isolation structure protruding from a surface of the substrate...
US20090045485 CAPACITOR, METHOD OF MANUFACTURING CAPACITOR, CAPACITOR MANUFACTURING APPARATUS, AND SEMICONDUCTOR MEMORY DEVICE  
The present invention provides a capacitor including: an under electrode; an upper electrode; and a dielectric film which is provided between the under electrode and the upper electrode, wherein at...
US20090008744 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD  
A semiconductor device includes: a first interlayer insulating film; a first conductive member provided lower than the first interlayer insulating film; a contact plug that penetrates through the...
US20080318388 METHOD FOR FABRICATING MOS TRANSISTOR WITH RECESS CHANNEL  
A method for fabricating a MOS transistor with a recess channel, including: providing a substrate with a plurality of trench capacitors therein, wherein a trench top oxide is positioned on top of...
US20080308854 SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF  
A semiconductor memory device including a cylinder hole extended in a thickness direction of an insulating film; a capacitor configured from a lower electrode, which is formed on an inner surface...
US20080305604 DEEP TRENCH AND FABRICATING METHOD THEREOF, TRENCH CAPACITOR AND FABRICATING METHOD THEREOF  
A method of fabricating a deep trench is provided, by which a trench is formed in the substrate initially. Then, a block layer is formed on the substrate surface of the upper portion of the trench....
US20080296729 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device is manufactured by forming a hole as being extended through a first insulating film and an insulating interlayer stacked over a semiconductor substrate, allowing side-etching...
US20080297974 Method of Manufacturing Capacitive Elements for a Capacitive Device  
A method of manufacturing capacitive elements for a capacitive device which comprises one or more layers is provided. At least one layer is etched from a first surface to a second surface thereof...
US20080284021 Method for FEOL and BEOL Wiring  
A method for forming a conductive structure of sub-lithographic dimension suitable for FEOL and BEOL semiconductor fabrication applications. The method includes forming a topographic feature of...
US20080274615 Atomic Layer Deposition Methods, Methods of Forming Dielectric Materials, Methods of Forming Capacitors, And Methods of Forming DRAM Unit Cells  
Some embodiments include methods of forming metal-containing oxides. The methods may utilize ALD where a substrate surface is exposed to an organometallic composition while the substrate surface is...
US20080272421 METHODS, CONSTRUCTIONS, AND DEVICES INCLUDING TANTALUM OXIDE LAYERS  
Methods, constructions, and devices that include tantalum oxide layers adjacent to niobium nitride are disclosed herein. In certain embodiments, the niobium nitride is crystalline and has a...
US20080268605 Capacitors and methods with praseodymium oxide insulators  
Methods of forming and the resulting capacitors formed by these methods are shown. Monolayers that contain praseodymium are deposited onto a substrate and subsequently processed to form...
US20080258268 TRENCH STRUCTURE AND METHOD OF FORMING THE TRENCH STRUCTURE  
Disclosed are embodiments of an improved deep trench capacitor structure and memory device that incorporates this deep trench capacitor structure. The deep trench capacitor and memory device...
US20080233705 METHOD FOR SELECTIVELY FORMING ELECTRIC CONDUCTOR AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE  
A method for selectively forming an electric conductor, the method including disposing a processing target and a metal compound in an atmosphere including a supercritical fluid, the processing...
US20080227263 Semiconductor device and method for fabricating the same  
A semiconductor device of the present invention includes a plurality of lower electrodes covering the entire surfaces of a plurality of trenches formed in a first interlayer insulating film, a...
Matches 1 - 50 out of 87 1 2 >