Matches 1 - 8 out of 8
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US20090261897 Applying trenched transient voltage suppressor (TVS) technology for distributed low pass filters  
An electronic circuit includes a filtering circuit implemented with a distributed inductor-and-capacitor (LC) network that includes metal oxide effect (MOS) trenches opened in a semiconductor...
US20090224354 JUNCTION BARRIER SCHOTTKY DIODE WITH SUBMICRON CHANNELS  
A junction barrier Schottky diode is provided as having submicron channel width between implant regions by way of a process including the use of spacer technology. On-state resistance is lowered by...
US20090045457 Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (TVS)  
A transient-voltage suppressing (TVS) device disposed on a semiconductor substrate including a low-side steering diode, a high-side steering diode integrated with a main Zener diode for suppressing...
US20090029518 Method of fabricating schottky barrier diode  
Disclosed is a method of fabricating a Schottky barrier diode, which comprises the steps of laminating an N − type epitaxial layer having a thickness of 2 to 4 μm, on an N + type substrate...
US20080203534 COMPLEMENTARY ZENER TRIGGERED BIPOLAR ESD PROTECTION  
An electrostatic discharge (ESD) protection clamp ( 61 ) for I/O terminals ( 22, 23 ) of integrated circuits (ICs) ( 24 ) comprises an NPN bipolar transistor ( 25 ) coupled to an integrated Zener...
US20080124883 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE  
A structure comprises a single wafer with a first subcollector formed in a first region having a first thickness and a second subcollector formed in a second region having a second thickness,...
US20080096360 Semiconductor wafer suitable for forming a semiconductor junction diode device and method of forming same  
A method is provided of making a semiconductor wafer for a semiconductor junction diode device having a target forward voltage drop and a target reverse breakdown voltage. The method begins by...
US20080093671 Semi-Conductor Element Comprising An Integrated Zener Diode And Method For The Production Thereof  
In order to protect a semiconductor component against overvoltages, the steps which are used for production of bipolar transistors and CMOS structures in the semiconductor component are used for...
Matches 1 - 8 out of 8