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US20080305602 Transistor Manufacture  
An oxide layer is formed on material defining and surrounding an emitter window. The technique comprises depositing a non-conformal oxide layer on the surrounding material and in the emitter...
US20120126292 HETEROJUNCTION BIPOLAR TRANSISTORS WITH REDUCED BASE RESISTANCE  
Heterojunction bipolar transistors with reduced base resistance, as well as fabrication methods for heterojunction bipolar transistors and design structures for BiCMOS integrated circuits. The...
US20140175520 METAL SILICIDE SELF-ALIGNED SiGe HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD OF FORMING THE SAME  
The present invention discloses a metal silicide self-aligned SiGe heterojunction bipolar transistor, which is designed to overcome the shortcomings such as the large base resistance RB of the...
US20140284552 GRAPHENE BASE TRANSISTOR WITH REDUCED COLLECTOR AREA  
A graphene base transistor with reduced collector area comprising an electron injection region, an electron collection region, and a base region wherein the base region comprises one or more...
US20130134483 BIPOLAR TRANSISTOR WITH A RAISED COLLECTOR PEDASTAL FOR REDUCED CAPACITANCE AND A METHOD OF FORMING THE TRANSISTOR  
Disclosed are a transistor and a method of forming the transistor with a raised collector pedestal in reduced dimension for reduced base-collector junction capacitance. The raised collector...
US20130005108 SILICON GERMANIUM (SiGe) HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)  
A heterojunction bipolar transistor (HBT), an integrated circuit (IC) chip including at least one HBT and a method of forming the IC. The HBT includes an extrinsic base with one or more buried...
US20080191245 Bipolar Junction Transistor Having A High Germanium Concentration In A Silicon-Germanium Layer And A Method For Forming The Bipolar Junction Transistor  
A method for forming a germanium-enriched region in a heterojunction bipolar transistor and a heterojunction bipolar transistor comprising a germanium-enriched region. A base having a...
US20110230031 BIPOLAR JUNCTION TRANSISTOR HAVING A HIGH GERMANIUM CONCENTRATION IN A SILICON-GERMANIUM LAYER AND A METHOD FOR FORMING THE BIPOLAR JUNCTION TRANSISTOR  
A method for forming a germanium-enriched region in a heterojunction bipolar transistor and a heterojunction bipolar transistor comprising a germanium-enriched region. A base having a...
US20070051980 SILICON GERMANIUM (SiGe) HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)  
A heterojunction bipolar transistor (HBT), an integrated circuit (IC) chip including at least one HBT and a method of forming the IC. The HBT includes an extrinsic base with one or more buried...
US20090127585 Integration of an NPN device with phosphorus emitter and controlled emitter-base junction depth in a BiCMOS process  
According to one exemplary embodiment, a heterojunction bipolar transistor includes a base situated on a substrate. The heterojunction bipolar transistor can be an NPN silicon-germanium...
US20120064688 METHOD FOR MANUFACTURING SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR  
A manufacturing method of a SiGe HBT is disclosed. Alter an emitter region is formed, an ion implantation is performed with a tilt angle to a base region by using an extrinsic base ion...
US20120199881 BIPOLAR TRANSISTOR AND METHOD WITH RECESSED BASE ELECTRODE  
High frequency performance of (e.g., silicon) bipolar devices (100) is improved by reducing the extrinsic base resistance Rbx. Emitter (160), intrinsic base (161, 163) and collector (190) are...
US20100001319 Method for Making a Heterojunction Bipolar Transistor  
The invention concerns a heterojunction bipolar transistor comprising a support, and epitaxially grown from said support, at least: one collecting, respectively emitting, layer; at least one base...
US20130119436 INTERFACE CONTROL IN A BIPOLAR JUNCTION TRANSISTOR  
Methods of fabricating bipolar junction transistors, bipolar junction transistors, and design structures for a bipolar junction transistor. A first portion of the intrinsic base layer is masked...
US20080203434 Semiconductor Device with a Bipolar Transistor and Method of Manufacturing Such a Device  
The invention relates to a semiconductor device (10) with a substrate and a semiconductor body of silicon comprising a bipolar transistor with an emitter region (1), a base region (2) and a...
US20150200284 EMITTER CONTACT EPITAXIAL STRUCTURE AND OHMIC CONTACT FORMATION FOR HETEROJUNCTION BIPOLAR TRANSISTOR  
Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device includes a diffusion control layer as part of an emitter...
US20090321879 SILICIDED BASE STRUCTURE FOR HIGH FREQUENCY TRANSISTORS  
High frequency performance of (e.g., silicon) bipolar devices (100, 100″) is improved by reducing the extrinsic base resistance Rbx. Emitter (160), base (161) and collector (190) are formed in or...
US20130234209 SWITCHING DEVICE FOR HETEROJUNCTION INTEGRATED CIRCUITS AND METHODS OF FORMING THE SAME  
A switching device for heterojunction integrated circuits is disclosed. According to one aspect, the switching device is configured to protect a circuit from an electro-static discharge (ESD)...
US20130168820 POWER SIGE HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) WITH IMPROVED DRIVE CURRENT BY STRAIN COMPENSATION  
A power SiGe heterojunction bipolor transistor (HBT) with improved drive current by strain compensation and methods of manufacture are provided. A method includes adding carbon in a continuous...
US20120132960 REGROWN HETEROJUNCTION BIPOLAR TRANSISTORS FOR MULTI-FUNCTION INTEGRATED DEVICES AND METHOD FOR FABRICATING THE SAME  
The present invention may provide an integrated device, which may include a substrate having first and second regions, the first region spaced apart from the second region, a first heterojunction...
US20120273760 Bipolar Transistor with Lateral Emitter and Collector and Method of Production  
A bipolar transistor includes a substrate of semiconductor material, a high-mobility layer in the substrate, and a donor layer adjacent to the high-mobility layer. An emitter terminal forms an...
US20070048956 Interrupted deposition process for selective deposition of Si-containing films  
A method is provided for selectively forming a Si-containing film on a substrate in an interrupted deposition process. The method includes providing a substrate containing a growth surface and a...
US20130187198 HETEROJUNCTION BIPOLAR TRANSISTOR WITH REDUCED SUB-COLLECTOR LENGTH, METHOD OF MANUFACTURE AND DESIGN STRUCTURE  
A heterojunction bipolar transistor (HBT) structure, method of manufacturing the same and design structure thereof are provided. The HBT structure includes a semiconductor substrate having a...
US20080128749 Method and system for providing a drift coupled device  
A method and system for providing a semiconductor device is described. The method and system include providing a compound region and providing a doped region. The compound region includes an alloy...
US20120326211 BIPOLAR HIGH ELECTRON MOBILITY TRANSISTOR AND METHODS OF FORMING SAME  
An epilayer structure includes a field-effect transistor structure and a heterojunction bipolar transistor structure. The heterojunction bipolar transistor structure contains an n-doped...
US20130126944 HETEROJUNCTION BIPOLAR TRANSISTOR WITH EPITAXIAL EMITTER STACK TO IMPROVE VERTICAL SCALING  
A heterojunction bipolar transistor (HBT) may include an n-type doped crystalline collector formed in an upper portion of a crystalline silicon substrate layer; a p-type doped crystalline...
US20100171151 HETEROJUNCTION BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF  
An HBT according to this invention includes: a sub-collector layer; a collector layer formed on the sub-collector layer and the base layer including a first collector layer, a second collector...
US20070243689 Semiconductor device having semiconductor and base contact pad mesa portions  
A semiconductor device, able to be produced while suppressing the occurrence of mesa shaped abnormalities without restriction as to the pattern layout, the type of etchant used, etc., provided...
US20070148890 Oxygen enhanced metastable silicon germanium film layer  
A method for pseudomorphic growth and integration of a strain-compensated metastable and/or unstable compound base having incorporated oxygen and an electronic device incorporating the base is...
US20060292809 Method for growth and optimization of heterojunction bipolar transistor film stacks by remote injection  
A method, and a resulting device, for fabricating a heterojunction bipolar transistor (HBT). HBT devices have a high transconductance typical of bipolar devices and are additionally capable of...
US20130341681 HETEROJUNCTION BIPOLAR TRANSISTOR WITH IMPROVED CURRENT GAIN AND A FABRICATION METHOD THEREOF  
A heterojunction bipolar transistor (HBT) with improved current gain and the fabrication method thereof, in which the HBT comprises a substrate, a p-type buffer layer, a sub-collector layer, a...
US20130320403 Epitaxial Base Layers For Heterojunction Bipolar Transistors  
An exemplary embodiment of the present invention provides a heterojunction bipolar transistor comprising an emitter, a collector, and a base. The base can be disposed substantially between the...
US20080050883 HETROJUNCTION BIPOLAR TRANSISTOR (HBT) WITH PERIODIC MULTILAYER BASE  
A method and resulting electronic device utilizing a periodic multi-layer (ML) and/or superlattice (SL) structures in the base of a SiGe heterojunction bipolar transistor (HBT) is disclosed. The...
US20050139862 Self-aligned heterojunction bipolar transistor and manufacturing method thereof  
Provided are a self-aligned heterojunction bipolar transistor that can prevent electrical short-circuit caused by the agglomeration during the formation of a silicide electrode, minimize...
US20150014632 Advanced Heterojunction Devices and Methods of Manufacturing Advanced Heterojunction Devices  
Methods of manufacture of advanced electronic and photonic structures including heterojunction transistors, transistor lasers and solar cells and their related structures, are described herein....
US20100140587 High-Injection Heterojunction Bipolar Transistor  
A method for manufacturing high-injection heterojunction bipolar transistor capable of being used as a photonic device is disclosed. A sub-collector layer is formed on a substrate. A collector...
US20120032233 SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR AND MANUFACTURING METHOD OF THE SAME  
A Silicon-Germanium heterojunction bipolar transistor (SiGe HBT) formed on a silicon substrate, wherein, an active region is isolated by field oxide regions, a collector region is formed in the...
US20150093872 LATERAL HETEROJUNCTION BIPOLAR TRANSISTOR WITH LOW TEMPERATURE RECESSED CONTACTS  
A method of forming the heterojunction bipolar transistor that includes providing a stack of a base layer, an extrinsic base layer, a first metal containing layer, and a dielectric cap layer. The...
US20100283084 BIPOLAR TRANSISTOR AND METHOD FOR FABRICATING THE SAME  
The bipolar transistor includes a heterojunction intrinsic base layer epitaxially grown on a collector layer. The intrinsic base layer is disposed on the collector layer surrounded by an isolation...
US20130119404 DEVICE STRUCTURE INCLUDING HIGH-THERMAL-CONDUCTIVITY SUBSTRATE  
Methods and apparatuses for forming a device structure including a high-thermal-conductivity substrate are disclosed herein. A method forming such a device structure may comprise forming an active...
US20140246676 BIPOLAR DEVICE HAVING A MONOCRYSTALLINE SEMICONDUCTOR INTRINSIC BASE TO EXTRINSIC BASE LINK-UP REGION  
A bipolar device with an entirely monocrystalline intrinsic base to extrinsic base link-up region. To form the device, a first extrinsic base layer, which is amorphous or polycrystalline, is...
US20100159664 SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURE AND METHOD  
Disclosed is an improved semiconductor structure (e.g., a silicon germanium (SiGe) hetero-junction bipolar transistor) having a narrow essentially interstitial-free SIC pedestal with minimal...
US20150249148 TRANSISTOR AND MANUFACTURING METHOD THEREOF  
A transistor includes a semiconductor substrate comprising a first region and a second region. The transistor further includes an emitter and a base disposed on the first region, and a collector...
US20100008122 Memory Device And Method For Making Same  
An embodiment relates to a memory cell comprising a programmable resistance memory element electrically coupled to a heterojunction bipolar transistor.
US20090053872 METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR  
The invention relates to a method of manufacturing a bipolar transistor on a semiconductor substrate (11) which is provided with a first, a second and a third layer (1,2,3) of a first, second and...
US20080203426 HETEROJUNCTION SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING  
A metamorphic buffer layer is formed on a semi-insulating substrate by an epitaxial growth method, a collector layer, a base layer, an emitter layer and an emitter cap layer are sequentially...
US20050085044 Method for the production of a hetero-bipolar transistor  
The invention relates to a method of manufacturing a heterobipolar transistor, wherein epitaxially grown layers (2 to 11) on a substrate (1) are structured by etching. An emitter contact (31) and...
US20090302351 BIPOLAR TRANSISTOR AND MANUFACTURING METHOD OF THE SAME  
A bipolar transistor (1) comprising a subcollector layer (3), a collector layer (4, 5), a base layer (6) and an emitter layer (7) which are successively built up and having: the subcollector layer...
US20150162322 BIPOLAR JUNCTION TRANSISTOR DEVICE AND METHOD OF MAKING THE SAME  
A method is provided of forming a bipolar transistor device. The method comprises depositing a collector dielectric layer over a substrate in a collector active region, depositing a dielectric...
US20140273323 METHOD OF MANUFACTURE OF ADVANCED HETEROJUNCTION TRANSISTOR AND TRANSISTOR LASER  
Methods of manufacture of advanced heterojunction transistors and transistor lasers, and their related structures, are described herein. Other embodiments are also disclosed herein.

Matches 1 - 50 out of 68 1 2 >