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US20120098098 STACKED ESD CLAMP WITH REDUCED VARIATION IN CLAMP VOLTAGE  
An integrated circuit containing a stacked bipolar transistor which includes two bipolar transistors connected in series is disclosed. Each bipolar transistor includes a breakdown inducing...
US20110175198 ESD PROTECTION WITH INCREASED CURRENT CAPABILITY  
A stackable electrostatic discharge (ESD) protection clamp (21) for protecting a circuit core (24) comprises, a bipolar transistor (56, 58) having a base region (74, 51, 52, 85) with a base...
US20150194510 SELF-ALIGNED EMITTER-BASE-COLLECTOR BIPOLAR JUNCTION TRANSISTORS WITH A SINGLE CRYSTAL RAISED EXTRINSIC BASE  
Fabrication methods, device structures, and design structures for a bipolar junction transistor. An intrinsic base layer is formed on a semiconductor substrate, an etch stop layer is formed on the...
US20070170462 Photo sensor and preparation method thereof  
A novel structure of photo sensor is disclosed. The equivalent circuit of the invented photo sensor comprises a photo transistor integrated with a surface photo sensor. The structure of the...
US20140015090 BIPOLAR TRANSISTOR WITH HIGH BREAKDOWN VOLTAGE  
A higher breakdown voltage transistor has separated emitter, base contact, and collector contact. Underlying the emitter and the base contact are, respectively, first and second base portions of a...
US20140131711 STRUCTURES AND TECHNIQUES FOR USING SEMICONDUCTOR BODY TO CONSTRUCT BIPOLAR JUNCTION TRANSISTORS  
A bipolar junction transistor built with a mesh structure of cells provided on a semiconductor body is disclosed. The mesh structure has at least one emitter cell with a first type of implant. At...
US20140131837 GAN VERTICAL BIPOLAR TRANSISTOR  
An embodiment of a semiconductor device includes a III-nitride base structure of a first conductivity type, and a III-nitride emitter structure of a second conductivity type having a first surface...
US20090231034 Inverse mode SiGe HBT cascode device and fabrication method  
Disclosed is a device structure using an inverse-mode cascoded Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) beneficial in applications requiring radiation hardened circuitry....
US20120007103 SILICON CARBIDE BIPOLAR JUNCTION TRANSISTOR  
The present disclosure relates to a silicon carbide (SiC) bipolar junction transistor (BJT), where the surface region between the emitter and base contacts (1, 2) on the transistor is given a...
US20130249057 SIGE HETEROJUNCTION BIPOLAR TRANSISTOR WITH AN IMPROVED BREAKDOWN VOLTAGE-CUTOFF FREQUENCY PRODUCT  
The product of the breakdown voltage (BVCEO) and the cutoff frequency (fT) of a SiGe heterojunction bipolar transistor (HBT) is increased beyond the Johnson limit by utilizing a doped region with...
US20110057289 Ultrashallow Emitter Formation Using ALD and High Temperature Short Time Annealing  
An integrated circuit containing a bipolar transistor including an emitter diffused region with a peak doping density higher than 1·1020 atoms/cm3, and an emitter-base junction less than 40...
US20070254446 Self-aligned biopolar junction transistors  
A plurality of bipolar transistors are formed by forming a common conduction region, a plurality of control regions extending each in an own active areas on the common conduction region, a...
US20140003000 BIPOLAR TRANSISTOR ON HIGH-RESISTIVITY SUBSTRATE  
Systems and methods are disclosed for processing radio frequency (RF) signals using one or more bipolar transistors disposed on or above a high-resistivity region of a substrate. The substrate may...
US20100001319 Method for Making a Heterojunction Bipolar Transistor  
The invention concerns a heterojunction bipolar transistor comprising a support, and epitaxially grown from said support, at least: one collecting, respectively emitting, layer; at least one base...
US20070102729 Method and system for providing a heterojunction bipolar transistor having SiGe extensions  
A method and system for providing a bipolar transistor is described. The method and system include providing a compound base region including includes a compound box extension, providing an...
US20090200641 Semiconductor device and method of manufacturing the same  
The invention relates to a semiconductor device (10) with a semiconductor body (12) comprising a bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of,...
US20090321879 SILICIDED BASE STRUCTURE FOR HIGH FREQUENCY TRANSISTORS  
High frequency performance of (e.g., silicon) bipolar devices (100, 100″) is improved by reducing the extrinsic base resistance Rbx. Emitter (160), base (161) and collector (190) are formed in or...
US20090315145 ADJUSTABLE BIPOLAR TRANSISTORS FORMED USING A CMOS PROCESS  
By providing a novel bipolar device design implementation, a standard CMOS process (105-109) can be used unchanged to fabricate useful bipolar transistors (80) and other bipolar devices having...
US20120322219 Reduction of Stored Charge in the Base Region of a Bipolar Transistor to Improve Switching Speed  
In one embodiment, a method includes forming a base region for a transistor using a base mask and forming a contact region to the base region. The contact region is formed in an area that is at...
US20070105328 Production method of cell electrodes  
The invention relates to fuel cells and methods of making bipolar fuel cell electrodes. The invention provides a method of producing bipolar fuel cell electrodes, including providing a collector...
US20060281274 Nonvolatile resistive memory element  
A nonvolatile memory element includes a first material region, a second material and an oxidation material region including an oxidation material as a memory material region. The oxidation...
US20110248375 Bipolar Transistor with an N-Type Base and Method of Production  
A base contact connection, an emitter structure and a collector structure are arranged on an n-layer, which can be provided for additional npn transistors. The collector structure is arranged...
US20140367830 ESD PROTECTION DEVICE  
An electrostatic discharge protection clamp includes a substrate and a first electrostatic discharge protection device over the substrate. The first electrostatic discharge protection device...
US20090108749 TRANSISTOR AND PROCESS OF PRODUCING THE SAME, LIGHT-EMITTING DEVICE, AND DISPLAY  
A transistor capable of modulating, at low voltages, a large current flowing between an emitter electrode and a collector electrode. A process of producing the transistor, a light-emitting device...
US20050250289 Control of dopant diffusion from buried layers in bipolar integrated circuits  
An integrated circuit and method of fabricating the integrated circuit is disclosed. The integrated circuit includes vertical bipolar transistors (30, 50, 60), each having a buried collector...
US20070069252 Insulated gate semiconductor device having a clamping element to clamp gate-emitter voltage and method of manufacturing thereof  
The gate of an IGBT is connected to a gate terminal. One end of a clamping element is connected to an anode terminal. A voltage higher than a clamping voltage is applied between the gate and the...
US20070170537 Method and device for wavelength-sensitive photo-sensing  
A semiconductor device includes a conducting channel (130) formed beneath a substrate surface with a pre-determined photo-conductivity spectral response. The channel is formed between two...
US20150108542 BIPOLAR TRANSISTOR STRUCTURE HAVING SPLIT COLLECTOR REGION AND METHOD OF MAKING THE SAME  
A bipolar transistor includes a substrate and a first well in the substrate, the first well having a first dopant type. The bipolar transistor further includes a split collector region in the...
US20120105094 METHOD OF MANUFACTURING A SiC BIPOLAR JUNCTION TRANSISTOR AND SiC BIPOLAR JUNCTION TRANSISTOR THEREOF  
A method of manufacturing a silicon carbide (SiC) bipolar junction transistor (BJT) and a SiC BJT are provided. The SiC BJT comprises an emitter region, a base region and a collector region. The...
US20080076228 BIPOLAR DEVICE HAVING BURIED CONTACTS  
The invention, in one aspect, provides a semiconductor device that includes a collector for a bipolar transistor located within a semiconductor substrate and a buried contact, at least a portion...
US20050037587 Heterojunction bipolar transistor  
A method for forming a heterojunction bipolar transistor including the steps of: forming in a semiconductor substrate a collector area of a first doping type; growing by epitaxy above a portion of...
US20120295414 METHODS FOR PRODUCING STACKED ELECTROSTATIC DISCHARGE CLAMPS  
Methods are provided for producing stacked electrostatic discharge (ESD) clamps. In one embodiment, the method includes providing a semiconductor substrate in which first and second...
US20140187014 METHODS FOR FORMING BIPOLAR TRANSISTORS  
Methods are provided for forming a device that includes merged vertical and lateral transistors with collector regions of a first conductivity type between upper and lower base regions of opposite...
US20140327110 METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR, BIPOLAR TRANSISTOR AND INTEGRATED CIRCUIT  
Consistent with an example embodiment, a bipolar transistor comprises an emitter region vertically separated from a collector region in a substrate by a base region. The bipolar transistor further...
US20120104555 Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performances  
This invention discloses an insulated gate bipolar transistor (IGBT) device formed in a semiconductor substrate. The IGBT device has a split-shielded trench gate that includes an upper gate...
US20100001290 BIPOLAR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF  
A semiconductor crystal includes a recombination-inhibiting semiconductor layer (17) of a second conductive type that is disposed in the vicinity of the surface between a base contact region (16)...
US20150187751 AMPLIFIER VOLTAGE LIMITING USING PUNCH-THROUGH EFFECT  
Disclosed herein are systems and method for voltage clamping in semiconductor circuits using through-silicon via (TSV) positioning. A semiconductor die is disclosed that includes a silicon...
US20100078724 TRANSISTOR-TYPE PROTECTION DEVICE, SEMICONDUCTOR INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF THE SAME  
A transistor-type protection device includes: a semiconductor substrate; a well including a first-conductivity-type semiconductor formed in the semiconductor substrate; a source region including a...
US20110133289 MULTIPLE DOPING LEVEL BIPOLAR JUNCTIONS TRANSISTORS AND METHOD FOR FORMING  
A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction...
US20120223369 Gated Bipolar Junction Transistors, Memory Arrays, and Methods of Forming Gated Bipolar Junction Transistors  
Some embodiments include gated bipolar junction transistors. The transistors may include a base region between a collector region and an emitter region; with a B-C junction being at an interface...
US20080308837 VERTICAL CURRENT CONTROLLED SILICON ON INSULATOR (SOI) DEVICE SUCH AS A SILICON CONTROLLED RECTIFIER AND METHOD OF FORMING VERTICAL SOI CURRENT CONTROLLED DEVICES  
A Silicon on Insulator (SOI) Integrated Circuit (IC) chip with devices such as a vertical Silicon Controlled Rectifier (SCR), vertical bipolar transistors, a vertical capacitor, a resistor and/or...
US20060030114 METHOD FOR FORMING JUNCTION VARACTOR AND APPARATUS THEREOF  
A method for forming a junction varactor and apparatus thereof are disclosed. The method includes: forming at least one deep N-well in a P-type substrate; forming a P-well in the deep N-well;...
US20060001097 Semiconductor device and manufacturing method of the same  
A protection transistor which protects an internal transistor in an internal circuit from breakage due to static electricity occurring between power supply pads is provided. A conductivity type of...
US20090317983 Process for Producing Silicon Carbide Semiconductor Device  
In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a...
US20060244090 Method for fabricating an integrated circuit comprising a photodiode and corresponding integrated circuit  
An integrated circuit includes a photodiode produced from the formation of a stack of three semiconductor layers. An overdoped storage zone is formed in a second (middle) layer of the stack. A...
US20150115283 SIC BIPOLAR JUNCTION TRANSISTOR WITH REDUCED CARRIER LIFETIME IN COLLECTOR AND A DEFECT TERMINATION LAYER  
A method of manufacturing a silicon carbide (SiC) bipolar junction transistor (BJT) and a SiC BJT (100) are provided. The SiC BJT comprises an emitter region (150), a base region (140) and a...
US20150243770 VERTICAL BIPOLAR JUNCTION TRANSISTOR AND MANUFACTURING METHOD THEREOF  
The present disclosure relates to a vertical bipolar junction transistor. A vertical bipolar junction transistor includes a high concentration doping region emitter terminal disposed on a...
US20110026174 Electrostatic Discharge Protection Element and Electrostatic Discharge Protection Chip and Method of Producing the Same  
An electrostatic discharge (ESD) protection element is described, the ESD protection element including a collector area, a first barrier area, a semiconductor area, a second barrier area and an...
US20090179303 Vertical Bipolar Transistor  
A vertical heterobipolar transistor comprising a substrate of semiconductor material of a first conductivity type and an insulation region provided therein, a first semiconductor electrode...
US20070023864 METHODS OF FABRICATING BIPOLAR TRANSISTOR FOR IMPROVED ISOLATION, PASSIVATION AND CRITICAL DIMENSION CONTROL  
A first (e.g. replaceable or disposable) dielectric spacer formed on a sidewall of a dummy emitter mandrel is removed after a raised extrinsic base layer and covering dielectric layer are formed....
Matches 1 - 50 out of 101 1 2 3 >