Match Document Document Title
US20140354392 METAL WIRES OF A STACKED INDUCTOR  
A method including forming a first metal wire in a first dielectric layer, the first metal wire including a first vertical side opposite from a second vertical side; and forming a second metal...
US20110318848 FERROMAGNETIC PREFERRED GRAIN GROWTH PROMOTION SEED LAYER FOR AMORPHOUS OR MICROCRYSTALLINE MgO TUNNEL BARRIER  
MgO-based magnetic tunnel junction (MTJ) device includes in essence a ferromagnetic reference layer, a MgO tunnel barrier and a ferromagnetic free layer. The microstructure of MgO tunnel barrier,...
US20080220542 LOW-FIRE FERROELECTRIC MATERIAL  
A low-fire ferroelectric composition, includes a lead bismuth titanate compound having a formula represented by: (Bi2O2)x2+(Mm−1TimO3m−1)x2− wherein in represents a number 1 through 5, M...
US20130249112 PASSIVE WITHIN VIA  
A method of forming a device associated with a via includes forming an opening or via, and forming at least a pair of conducting paths within the via. Also disclosed is a via having at pair of...
US20130168808 MEMS POWER INDUCTOR WITH MAGNETIC LAMINATIONS FORMED IN A CRACK RESISTANT HIGH ASPECT RATIO STRUCTURE  
Magnetic laminations are formed in the openings of a first non-conductive structure, which is formed in the opening of a second non-conductive structure that has a maximum aspect ratio that is...
US20150179925 MAGNETIC MULTILAYER STACK  
A magnetic multilayer stack for a magnetoresistance device and a method of forming the multilayer stack is disclosed. In one aspect, the magnetic multilayer stack comprises a composite soft layer...
US20140210023 Vertical Hall Effect Element with Improved Sensitivity  
A vertical Hall Effect element includes a low voltage P-well region disposed at a position between pickups of a vertical Hall Effect element to result in an improved sensitivity of the vertical...
US20130146996 MAGNETIC DEVICE FABRICATION  
The present disclosure provides for magnetic devices and methods of fabricating such a device. In one embodiment, a magnetic device includes a first elliptical pillar of first material layers; a...
US20130293286 TUNABLE REFERENCE CIRCUIT  
A circuit includes a first reference pair that includes a first path and a second path. The first path includes a first magnetic tunnel junction (MTJ) element, and the second path includes a...
US20100321985 Boosted gate voltage programming for spin-torque MRAM array  
A gate voltage boosting circuit provides a voltage boost to a gate of a select switching MOS transistor of a spin-torque MRAM cell to prevent a programming current reduction through an MTJ device...
US20140264667 Vertical Hall Effect Element With Structures to Improve Sensitivity  
A vertical Hall Effect element includes one or more of: a low voltage P-well region disposed at a position between pickups of the vertical Hall Effect element, Light-N regions disposed under the...
US20130250662 TAMPER-RESISTANT MRAM UTILIZING CHEMICAL ALTERATION  
A magnetoresistive random access memory (MRAM) die may include an MRAM cell, a reservoir defined by the MRAM die, and a chemical disposed in the reservoir. At least one boundary of the reservoir...
US20140027869 AMORPHOUS ALLOY SPACER FOR PERPENDICULAR MTJs  
A perpendicular magnetic tunnel junction (MTJ) apparatus includes a tunnel magnetoresistance (TMR) enhancement buffer layer deposited between the tunnel barrier layer and the reference layers An...
US20090004759 Cobalt-doped indium-tin oxide films and methods  
Methods of forming cobalt-doped indium-tin oxide structures are shown. Properties of structures include transparency, conductivity, and ferromagnetism. Monolayers that contain indium, monolayers...
US20110123058 COMPOSITE MICROPHONE, MICROPHONE ASSEMBLY AND METHOD OF MANUFACTURING THOSE  
A composite microphone comprises a flexible and stretchable substrate (22, 122, 250, 350, 450) with a grid of flexible and stretchable first and second conductors (31a, . . . , 31e, 131a, 131g;...
US20140103469 Seed Layer for Multilayer Magnetic Materials  
A magnetic element is disclosed wherein a composite seed layer such as TaN/Mg enhances perpendicular magnetic anisotropy (PMA) in an overlying magnetic layer that may be a reference layer, free...
US20150236254 Method of Integration of a Magnetoresistive Structure  
A conductive via disposed beneath a magnetic device and aligned therewith. In certain embodiments, an electrode formed on the conductive via may be polished to eliminate step functions or seams...
US20110204460 Integrated Hall Effect Element Having a Germanium Hall Plate  
An integrated circuit and a method of making the integrated circuit provide a Hall effect element having a germanium Hall plate. The germanium Hall plate provides an increased electron mobility...
US20140349415 PERPENDICULAR MTJ STACKS WITH MAGNETIC ANISOTROPY ENHANCING LAYER AND CRYSTALLIZATION BARRIER LAYER  
Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free...
US20140084398 PERPENDICULAR MTJ STACKS WITH MAGNETIC ANISOTROPY ENHANCING LAYER AND CRYSTALLIZATION BARRIER LAYER  
Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free...
US20140042567 MTJ MRAM WITH STUD PATTERNING  
Use of a multilayer etching mask that includes a stud mask and a removable spacer sleeve for MTJ etching to form a bottom electrode that is wider than the rest of the MTJ pillar is described. The...
US20120248556 THREE-DIMENSIONAL MAGNETIC CIRCUITS INCLUDING MAGNETIC CONNECTORS  
A device including at least two spintronic devices and a method of making the same. A magnetic connector extends between the two spintronic devices to conduct a magnetization between the two. The...
US20150077100 Magnetic Field Sensing Element Combining a Circular Vertical Hall Magnetic Field Sensing Element with a Planar Hall Element  
A magnetic field sensor includes a circular vertical Hall (CVH) sensing element and at least one planar Hall element. The CVH sensing element has contacts arranged over a common implant region in...
US20110089415 EPITAXIAL GROWTH OF SINGLE CRYSTALLINE MGO ON GERMANIUM  
The embodiments disclosed herein relate to growth of magnesium-oxide on a single crystalline substrate of germanium. The embodiments further describes a method of manufacturing and crystalline...
US20120119735 XMR SENSORS WITH HIGH SHAPE ANISOTROPY  
Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically...
US20140175578 DIFFUSIONLESS TRANSFORMATIONS IN MTJ STACKS  
A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a plurality of magnetic layers including a nonmagnetic spacer layer. The magnetic...
US20150069563 Low Offset and High Sensitivity Vertical Hall Effect Sensor  
A vertical Hall Effect sensor is provided having a high degree of symmetry between its bias modes, can be adapted to exhibit a small pre-spinning systematic offset, and complies with the minimal...
US20120009689 Method of Forming a MEMS Power Inductor  
A scalable MEMS inductor is formed on the top surface of a semiconductor die. The MEMS inductor includes a plurality of magnetic lower laminations, a circular trace that lies over and spaced apart...
US20130234266 MAGNETIC TUNNEL JUNCTION WITH AN IMPROVED TUNNEL BARRIER  
The present disclosure concerns a method of fabricating a magnetic tunnel junction suitable for a magnetic random access memory (MRAM) cell and comprising a first ferromagnetic layer, a tunnel...
US20090224340 ANTIFERROMAGNETIC HALF-METALLIC SEMICONDUCTOR AND MANUFACTURING METHOD THEREFOR  
An antiferromagnetic half-metallic semiconductor of the present invention is manufactured by adding to a semiconductor two or more types of magnetic elements including a magnetic element with a...
US20140287534 HIGHLY SENSITIVE MAGNETIC TUNABLE HETEROJUNCTION DEVICE FOR RESISTIVE SWITCHING  
The present invention discloses highly sensitive magnetic heterojunction device consisting of a composite comprising ferromagnetic (La0.66Sr0.34MnO3) LSMO layer with ultra-thin ferrimagnetic...
US20110062550 HYDROGEN BARRIER FOR FERROELECTRIC CAPACITORS  
An integrated circuit containing a FeCap array. The FeCap array is at least partially surrounded on the sides by hydrogen barrier walls and on the top by a hydrogen barrier top plate. A method for...
US20150069540 STRAIN SENSOR AND METHOD FOR MANUFACTURING THE SAME  
According to one embodiment, a strain sensor includes a substrate, a lid, a frame, and a sensing unit. The substrate has a first surface. The lid is provided on the first surface. The frame is...
US20140308757 MEMS DEVICE AND A METHOD OF MAKING THE SAME  
A MEMS gyro is provided, having a movable portion, a non-movable portion, and a magnetic sensing structure that comprises a magnetic source disposed at the movable portion, a magnetic sensing...
US20140227805 Adhesion of Ferroelectric Material to Underlying Conductive Capacitor Plate  
Deposition of lead-zirconium-titanate (PZT) ferroelectric material over iridium metal, in the formation of a ferroelectric capacitor in an integrated circuit. The capacitor is formed by the...
US20120112299 FERROMAGNETIC TUNNEL JUNCTION STRUCTURE AND MAGNETORESISTIVE ELEMENT USING THE SAME  
For the present ferromagnetic tunnel junction structure, employed is a means characterized by using an MgO barrier and using a Co2FeAl full-Heusler alloy for any of the ferromagnetic layers...
US20140035074 Multilayers Having Reduced Perpendicular Demagnetizing Field Using Moment Dilution for Spintronic Applications  
A magnetic element is disclosed that has a composite free layer with a FM1/moment diluting/FM2 configuration wherein FM1 and FM2 are magnetic layers made of one or more of Co, Fe, Ni, and B and...
US20150194596 PERPENDICULAR MTJ STACKS WITH MAGNETIC ANISOTROPHY ENHANCING LAYER AND CRYSTALLIZATION BARRIER LAYER  
Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free...
US20140011298 MAGNETIC TUNNEL JUNCTION STRUCTURE  
A method comprises forming a trench in a substrate. The method also comprises depositing a magnetic tunnel junction (MTJ) structure within the trench. The method further comprises planarizing the MTJ.
US20140264670 CELL DESIGN FOR EMBEDDED THERMALLY-ASSISTED MRAM  
A thermally assisted magnetoresistive random access memory cell, a corresponding array, and a method for fabricating the array. An example cell includes a first metal layer, a second metal layer,...
US20140264666 CELL DESIGN FOR EMBEDDED THERMALLY-ASSISTED MRAM  
A thermally assisted magnetoresistive random access memory cell, a corresponding array, and a method for fabricating the array. An example cell includes a first metal layer, a second metal layer,...
US20140217525 METHOD OF IMPROVING SENSITIVITY OF TERRESTRIAL MAGNETISM SENSOR AND APPARATUS USING THE SAME  
Disclosed herein are a method of improving sensitivity of a terrestrial magnetism sensor and an apparatus using the same. A method of forming a terrestrial magnetism sensor includes: cleaning a...
US20100327248 CELL PATTERNING WITH MULTIPLE HARD MASKS  
A method of making a memory cell or magnetic element by using two hard masks. The method includes first patterning a second hard mask to form a reduced second hard mask, with a first hard mask...
US20130032923 Integrated Inductor  
A system and method for providing an integrated inductor with a high Quality factor (Q) is provided. An embodiment comprises a magnetic core that is in a center of a conductive spiral. The...
US20120241887 VERTICAL HALL SENSOR AND METHOD FOR PRODUCING A VERTICAL HALL SENSOR  
The invention relates to a vertical Hall sensor integrated in a semiconductor chip and a method for the production thereof. The vertical Hall sensor has an electrically conductive well of a first...
US20120091548 FERROMAGNETIC TUNNEL JUNCTION STRUCTURE, AND MAGNETO-RESISTIVE ELEMENT AND SPINTRONICS DEVICE EACH USING SAME  
Disclosed is a ferromagnetic tunnel junction structure which is characterized by having a tunnel barrier layer that comprises a non-magnetic material having a spinel structure. The ferromagnetic...
US20130062733 Integrated Circuit with Integrated Decoupling Capacitors  
Ferroelectric capacitor structures for integrated decoupling capacitors and the like. The ferroelectric capacitor structure includes two or more ferroelectric capacitors connected in series with...
US20120241885 MAGNETIC DEVICES AND STRUCTURES  
Magnetic devices, magnetoresistive structures, and methods and techniques associated with the magnetic devices and magnetoresistive structures are presented. For example, a magnetic device is...
US20110051503 Magnetic Devices and Structures  
Magnetic devices, magnetoresistive structures, and methods and techniques associated with the magnetic devices and magnetoresistive structures are presented. For example, a magnetic device is...
US20130299786 SPIN VALVES USING ORGANIC SPACERS AND SPIN-ORGANIC LIGHT-EMITTING STRUCTURES USING FERROMAGNETIC ELECTRODES  
The spacer in a spin-valve is replaced with an organic layer, allowing for numerous applications, including light-emitting structures. The invention demonstrates that the spin coherence of the...