Match Document Document Title
US20150126007 Methods of Manufacturing Three-Dimensional Semiconductor Memory Devices  
Methods of manufacturing a three-dimensional semiconductor device are provided. The method includes: forming a thin film structure, where first and second material layers of at least 2n (n is an...
US20150123193 SGT-INCLUDING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A method for manufacturing a semiconductor device includes forming an SGT in a semiconductor pillar on a semiconductor substrate and forming a wiring semiconductor layer so as to contact a side...
US20150118808 NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME  
A method for fabricating a non-volatile memory device includes: providing a substrate which includes a cell region where a plurality of memory cells are to be formed and a peripheral circuit...
US20150115353 FIELD EFFECT SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT  
What is provided is a field effect component including a semiconductor body, which extends in an edge zone from a rear side as far as a top side and which includes a semiconductor mesa, which...
US20150115345 VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME  
A vertical memory device includes a channel, a conductive pattern, gate electrodes, a bit line and a conductive line. A plurality of the channels and the conductive patterns extend in a vertical...
US20150115325 Spacer Supported Lateral Channel FET  
A semiconductor device includes a semiconductor material and trenches extending into the semiconductor material from a first main surface of the semiconductor material to form mesas of...
US20150111352 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device includes word lines and interlayer insulating layers alternately stacked over a substrate, vertical channel layers protruding from the substrate and passing through the word...
US20150104916 Method of Manufacturing Three Dimensional Semiconductor Memory Device  
A method of manufacturing a three-dimensional semiconductor memory device is provided. The method includes alternately stacking a first insulation film, a first sacrificial film, alternating...
US20150102363 SILICON CARBIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF  
A silicon carbide semiconductor device has a first-conductivity-type semiconductor layer having a lower impurity concentration and formed on a first-conductivity-type semiconductor substrate, a...
US20150102346 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME  
A semiconductor device is provided as follows. A peripheral circuit structure is disposed on a first substrate. A cell array structure is disposed on the peripheral circuit structure. A second...
US20150099338 NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME  
A non-volatile memory device includes first and second vertical channel layers generally protruding upwardly from a semiconductor substrate substantially in parallel; a first gate group configured...
US20150097227 SEMICONDUCTOR DEVICE WITH REDUCED GATE LENGTH  
A semiconductor device includes a first type region including a first conductivity type. The semiconductor device includes a second type region including a second conductivity type. The...
US20150093865 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME  
A semiconductor device includes a plurality of first insulating layers and a plurality of second layers alternately and vertically stacked on a substrate. Each of the plurality of second layers...
US20150091078 VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME  
A semiconductor device includes a substrate, a plurality of insulating layers vertically stacked on the substrate, a plurality of channels arranged in vertical openings formed through at least...
US20150091058 VERTICAL TRANSISTOR DEVICES FOR EMBEDDED MEMORY AND LOGIC TECHNOLOGIES  
Vertical transistor devices are described. For example, in one embodiment, a vertical transistor device includes an epitaxial source semiconductor region disposed on a substrate, an epitaxial...
US20150090951 SEMICONDUCTOR APPARATUS HAVING VERTICAL CHANNEL TRANSISTOR AND METHOD OF FABRICATING THE SAME  
A semiconductor apparatus and a method of fabricating the same are provided. The method includes sequentially depositing a gate electrode material and a sacrificial insulating layer on a...
US20150079746 3D NON-VOLATILE MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME  
A three-dimensional 3D nonvolatile memory device includes vertical channel layers protruding from a substrate; interlayer insulating layers and conductive layer patterns alternately deposited...
US20150079744 SEMICONDUCTOR DEVICE WITH BURIED BIT LINE AND METHOD FOR FABRICATING THE SAME  
A semiconductor device includes trenches defined in a substrate, buried bit lines partially filling the trenches, a first source/drain layer filling remaining portions of the trenches on the...
US20150076600 SUPER JUNCTION SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
There is provided a super junction semiconductor device and a method of manufacturing the same. A super junction semiconductor device includes an n-type semiconductor region disposed in a...
US20150076586 SINGLE-SEMICONDUCTOR-LAYER CHANNEL IN A MEMORY OPENING FOR A THREE-DIMENSIONAL NON-VOLATILE MEMORY DEVICE  
A memory film layer is formed in a memory opening through an alternating stack of first material layers and second material layers. A sacrificial material layer is deposited on the memory film...
US20150076580 METHOD OF INTEGRATING SELECT GATE SOURCE AND MEMORY HOLE FOR THREE-DIMENSIONAL NON-VOLATILE MEMORY DEVICE  
A method of fabricating a semiconductor device, such as a three-dimensional NAND memory string, includes forming a carbon etch stop layer having a first width over a major surface of a substrate,...
US20150076521 VERTICAL HIGH-VOLTAGE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF  
To provide a vertical SIC-MOSFET and IGBT capable of having low ON-resistance without destruction of gate oxide films or degradation of reliability even when a high voltage is applied, and a...
US20150072491 3-DIMENSIONAL NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME  
The device includes plural control gates stacked on a substrate, plural first channels, configured to penetrate the control gates, and plural memory layer patterns, each located between the...
US20150069458 VERTICAL TUNNEL FIELD EFFECT TRANSISTOR  
A tunnel field transistor (TFET) device includes a fin structure that protrudes from a substrate surface. The fin structure includes a base portion proximate to the substrate surface, a top...
US20150064867 METHOD OF FABRICATING THREE-DIMENSIONAL SEMICONDUCTOR DEVICE  
A three-dimensional semiconductor device and a method of fabricating the same, the device including a lower insulating layer on a top surface of a substrate; an electrode structure sequentially...
US20150064866 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME  
The present technology includes a semiconductor memory device, including a channel layer and interlayer insulation layers surrounding the channel layer. The interlayer insulation layers are...
US20150064865 MEMORY DEVICES INCLUDING VERTICAL PILLARS AND METHODS OF MANUFACTURING AND OPERATING THE SAME  
In a semiconductor device and a method of forming such a device, the semiconductor device comprises a substrate of semiconductor material extending in a horizontal direction. A plurality of...
US20150060996 SEMICONDUCTOR DEVICE WITH SILICIDE  
A semiconductor device includes a first type region including a first conductivity type. The semiconductor device includes a second type region including a second conductivity type. The...
US20150056770 Vertical Power MOSFET and Methods of Forming the Same  
A device includes a semiconductor layer of a first conductivity type, and a first and a second body region over the semiconductor layer, wherein the first and the second body regions are of a...
US20150056769 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device includes a substrate, and a gate line, located over the substrate, which includes a first conductive layer and one or more second conductive pattern layers located in the...
US20150054066 SEMICONDUCTOR DEVICES INCLUDING VERTICAL TRANSISTORS, ELECTRONIC SYSTEMS INCLUDING THE SAME AND METHODS OF MANUFACTURING THE SAME  
The semiconductor device includes word lines on a semiconductor substrate, common gates connected to each of the word lines and vertically disposed in the semiconductor substrate, buried bit lines...
US20150050790 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device includes word lines and interlayer insulating layers alternately stacked, a channel layer penetrating the word lines and the interlayer insulating layers, a tunnel...
US20150048442 SEMICONDUCTOR ARRANGEMENT WITH ONE OR MORE SEMICONDUCTOR COLUMNS  
A semiconductor arrangement includes a substrate region and a first semiconductor column projecting from the substrate region. The semiconductor arrangement includes a second semiconductor column...
US20150048292 SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL, RESISTIVE MEMORY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device, a resistive memory device including the same, and a method of manufacturing the same are provided. The semiconductor device includes a pillar extending substantially...
US20150044836 NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME  
The technology of the present invention relates to a non-volatile memory device and a fabrication method thereof. The non-volatile memory device includes channel layers protruding vertically from...
US20150044835 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME  
According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side...
US20150044834 Transistors, Semiconductor Constructions, and Methods of Forming Semiconductor Constructions  
Some embodiments include a transistor having a first electrically conductive gate portion along a first segment of a channel region and a second electrically conductive gate portion along a second...
US20150041884 POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
There is provided a power semiconductor device including: a first semiconductor region of a first conductivity type; second semiconductor regions formed in the first semiconductor region and being...
US20150037951 Three-Dimensional Semiconductor Devices and Methods of Fabricating the Same  
Three-dimensional semiconductor devices are provided. The three-dimensional semiconductor device includes a substrate, a buffer layer on the substrate. The buffer layer includes a material having...
US20150035037 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME  
According to one embodiment, the select transistor is provided between a memory array region and the layer selection portion. The channel body and the charge storage film are provided in the...
US20150017769 VERTICAL SEMICONDUCTOR DEVICE, MODULE AND SYSTEM EACH INCLUDING THE SAME, AND METHOD FOR MANUFACTURING THE VERTICAL SEMICONDUCTOR DEVICE  
A vertical semiconductor device having a vertical channel region is disclosed. The vertical semiconductor device includes a pillar having a vertical channel region, a bit line buried in a...
US20150011064 VERTICAL NON-VOLATILE MEMORY DEVICE, METHOD OF FABRICATING THE SAME DEVICE, AND ELECTRIC-ELECTRONIC SYSTEM HAVING THE SAME DEVICE  
Provided is a vertical non-volatile memory device having a metal source line. The vertical non-volatile memory device includes cell string units that are formed on first portions of a...
US20150008505 THREE DIMENSIONAL NAND DEVICE WITH BIRDS BEAK CONTAINING FLOATING GATES AND METHOD OF MAKING THEREOF  
A method of making a monolithic three dimensional NAND string including forming a stack of alternating layers of a first material and a second material over a substrate. The first material...
US20140370675 SEMICONDUCTOR DEVICE  
A semiconductor device includes a plurality of conductive layers and a plurality of insulating layers formed alternately with each other, at least one channel layer passing through the plurality...
US20140370674 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF  
A vertical super junction MOSFET and a lateral MOSFET are integrated on the same semiconductor substrate. The lateral MOSFET is electrically isolated from the vertical super junction MOSFET by an...
US20140367771 HIGH VOLTAGE SEMICONDUCTOR DEVICES AND METHODS OF MAKING THE DEVICES  
Metal-oxide-semiconductor field-effect transistor (MOSFET) devices are described which have a p-type region between the p-type well regions of the device. The p-type region can be either floating...
US20140367769 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor device forms a salicide layer to surround an upper surface and a circumference of a lateral surface of a pillar. A contact area between the pillar and a lower electrode may be...
US20140357032 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME  
On a silicon substrate is formed a stacked body by alternately stacking a plurality of silicon oxide films and silicon films, a trench is formed in the stacked body, an alumina film, a silicon...
US20140357031 NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME  
A nonvolatile memory device may include a plurality of channel layers protruded substantially perpendicularly over a substrate having a well region, a structure configured to have a plurality of...
US20140349453 METHODS OF FABRICATING THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES USING DIRECT STRAPPING LINE CONNECTIONS  
Memory devices include a plurality of elongate gate stacks extending in parallel on a substrate and at least one insulation region disposed in a trench between adjacent ones of the gate stacks....