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US20160087097 QUASI-VERTICAL STRUCTURE HAVING A SIDEWALL IMPLANTATION FOR HIGH VOLTAGE MOS DEVICE AND METHOD OF FORMING THE SAME  
A semiconductor device includes a buried layer in a substrate, the buried layer having a first dopant type. The semiconductor device further includes a first layer over the buried layer, the first...
US20160087059 Semiconductor Device and Method  
A vertical gate all around (VGAA) is provided. In embodiments, the VGAA has a nanowire with a first contact pad and a second contact pad. A gate electrode is utilized to help define a channel...
US20160086959 STRUCTURE AND METHOD FOR MANUFACTURE OF MEMORY DEVICE WITH THIN SILICON BODY  
Described herein is a structure and method of manufacturing for a memory device with a thin silicon body. The memory device may be a semiconductor comprising: a first dielectric of a first width;...
US20160086953 METHOD FOR FABRICATING MEMORY DEVICE  
Provided is a method for fabricating a memory device including forming a stack layer on a substrate, and embedding a plurality of gate pillar structures and a plurality of dielectric pillars in...
US20160079400 A JUNCTION-MODULATED TUNNELING FIELD EFFECT TRANSISTOR AND A FABRICATION METHOD THEREOF  
The present invention discloses a junction-modulated tunneling field effect transistor and a fabrication method thereof, belonging to a field of field effect transistor logic device and the...
US20160079358 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF  
A semiconductor structure, and methods for forming the semiconductor device are provided. In various embodiments, the semiconductor device includes a substrate, source/drain regions over the...
US20160079355 SEMICONDUCTOR DEVICE AND FORMATION THEREOF  
A semiconductor device and methods of formation are provided herein. A semiconductor device includes a conductor concentrically surrounding an insulator, and the insulator concentrically...
US20160079275 THREE-DIMENSIONAL (3D) SEMICONDUCTOR DEVICE  
A semiconductor device includes interlayer dielectrics stacked and spaced apart from each other, a channel layer passing through the interlayer dielectrics, line pattern regions each surrounding a...
US20160079274 Transistors, Semiconductor Constructions, and Methods of Forming Semiconductor Constructions  
Some embodiments include a transistor having a first electrically conductive gate portion along a first segment of a channel region and a second electrically conductive gate portion along a second...
US20160079270 INTEGRATED CIRCUIT DEVICE AND METHOD FOR MANUFACTURING THE SAME  
An integrated circuit device according to one embodiment includes a plurality of first electrode films stacked spaced from each other, a plurality of second electrode films stacked spaced from...
US20160079269 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME  
According to an embodiment, a nonvolatile semiconductor memory device comprises a plurality of conductive layers stacked in a first direction via an inter-layer insulating layer. In addition, the...
US20160079266 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME  
According to one embodiment, a semiconductor memory device includes a stacked body, a selection gate electrode, a semiconductor pillar, a first insulating member, a second insulating member, a...
US20160079265 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME  
This nonvolatile semiconductor memory device includes a semiconductor substrate and a first semiconductor layer formed on a surface of the semiconductor substrate. A memory cell array is formed by...
US20160079264 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME  
According to one embodiment, a stacked body including electrode layers and first insulating layers; first semiconductor members extending in the stacked body; a second semiconductor member...
US20160079262 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME  
According to one embodiment, a semiconductor memory device includes a conductive layer; a stacked body provided on the conductive layer and including a plurality of electrode layers separately...
US20160079261 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME  
According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode layers and a plurality of insulating layers respectively provided between the...
US20160079256 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
According to one embodiment, a semiconductor device includes a substrate and a multilayer body provided on the substrate. The multilayer body has electrode films and insulating films. The...
US20160079255 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME  
According to one embodiment, a stacked body includes electrode layers and first insulating layers alternately stacked. An isolation region extends in the stacked body, the isolation region...
US20160079239 SERIES-CONNECTED TRANSISTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME  
A series-connected transistor structure includes a first source, a first channel-drain structure, a second channel-drain structure, a gate dielectric layer, a gate, a first drain pad and a second...
US20160079069 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME  
According to one embodiment, a memory device includes: a first insulating film, a first electrode, a second insulating film, and a second electrode being stacked in a multilayer body, and an end...
US20160071949 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE  
A method for manufacturing a silicon carbide semiconductor device includes the following steps. When viewed in a direction perpendicular to a main surface, a silicon carbide substrate has a...
US20160071931 METHOD OF FORMATION OF GERMANIUM NANOWIRES ON BULK SUBSTRATES  
A material stack comprising alternating layers of a silicon etch stop material and a germanium nanowire template material is formed on a surface of a bulk substrate. The material stack and a...
US20160071880 THREE-DIMENSIONAL STRUCTURED MEMORY DEVICES  
A 3D structured nonvolatile semiconductor memory devices and methods for manufacturing are disclosed. One such device includes an n+ region at a source/drain region; a p+ region at the...
US20160071878 Methods of Forming Semiconductor Constructions  
Some embodiments include a semiconductor construction having a stack containing alternating levels of control gate material and intervening dielectric material. A channel material panel extends...
US20160071874 INTEGRATED CIRCUIT DEVICE AND METHOD FOR MANUFACTURING THE SAME  
According to one embodiment, an integrated circuit device includes a substrate. The integrated circuit device also includes a stacked body provided on the substrate, insulating films and electrode...
US20160071871 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME  
According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode layers and a plurality of inter-layer insulating layers each provided between...
US20160071870 SEMICONDUCTOR MEMORY DEVICE  
A semiconductor memory device includes a conducting layer and an insulating layer that are disposed above a semiconductor substrate, a plurality of pillars that extend in a direction which crosses...
US20160071869 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME  
The semiconductor memory device includes a stacked structure including conductive patterns and interlayer insulating patterns which are alternately stacked, a through-hole configured to pass...
US20160071867 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME  
Provided is a semiconductor device including a substrate and a stack layer. The substrate includes a first region, a second region, and a third region. The third region is disposed between the...
US20160071864 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME  
According to one embodiment, a semiconductor memory device includes a stacked body which is provided on a substrate and in which an insulating film and an electrode film are alternately stacked....
US20160071793 SEMICONDUCTOR MEMORY DEVICE  
According to one embodiment, a semiconductor memory device includes: a semiconductor substrate; a first semiconductor pillar above the semiconductor substrate; a first insulating layer comprising...
US20160064663 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE  
A semiconductor device includes first pillar-shaped semiconductor layers, a first gate insulating film formed around the first pillar-shaped semiconductor layers, gate electrodes formed of metal...
US20160064662 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE  
A semiconductor device includes first pillar-shaped silicon layers, a first gate insulating film formed around the first pillar-shaped silicon layers, gate electrodes formed of metal and formed...
US20160064542 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME  
The semiconductor device includes a semiconductor substrate, a plurality of source regions formed in a stripe shape on the semiconductor substrate, a plurality of gate electrodes formed in a...
US20160064541 VERTICAL TRANSISTOR AND METHOD OF MANUFACTURING THE SAME  
A vertical transistor includes a source-channel-drain structure, a gate and a gate dielectric layer. The source-channel-drain structure includes a source, a drain over the source and a channel...
US20160064524 VERTICAL TUNNELING FIELD-EFFECT TRANSISTOR CELL AND FABRICATING THE SAME  
A tunneling field-effect transistor (TFET) device is disclosed. A frustoconical protrusion structure is disposed over the substrate and protrudes out of the plane of substrate. A drain region is...
US20160064409 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE  
A non-volatile semiconductor storage device includes a plurality of gate electrodes stacked in a first direction, a channel portion facing the gate electrodes and extending in the first direction,...
US20160064405 METHOD FOR FORMING INSULATOR FILM ON METAL FILM  
According to one embodiment, forming a metal film on an underlying layer, and depositing an oxide film on the metal film using plasma of a mixed gas induced above the metal film. The mixed gas...
US20160056276 TRANSISTOR STRUCTURE WITH IMPROVED UNCLAMPED INDUCTIVE SWITCHING IMMUNITY  
A laterally diffused metal oxide semiconductor (LDMOS) transistor structure with improved unclamped inductive switching immunity. The LDMOS includes a substrate and an adjacent epitaxial layer...
US20160056210 WORD LINE CONNECTION FOR MEMORY DEVICE AND METHOD OF MAKING THEREOF  
A three-dimensional monolithic memory device includes at least one device region and a plurality of contact regions each including a stack of an alternating plurality of conductive word line...
US20160056084 POWER SEMICONDUCTOR DEVICE AND METHOD THEREFOR  
A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnection region overlying a first major surface, a...
US20160049472 VARIABLE CHANNEL STRAIN OF NANOWIRE TRANSISTORS TO IMPROVE DRIVE CURRENT  
A semiconductor device includes a nanowire structure and a stressor. The nanowire structure includes a first channel section and a second channel section. The stressor subjects the first channel...
US20160049421 THREE DIMENSIONAL NAND DEVICE HAVING DUMMY MEMORY HOLES AND METHOD OF MAKING THEREOF  
A monolithic three dimensional NAND string includes a plurality of control gate electrodes extending substantially parallel to a major surface of a substrate, a memory opening extending...
US20160049404 Array Of Gated Devices And Methods Of Forming An Array Of Gated Devices  
An array of gated devices includes a plurality of gated devices arranged in rows and columns and individually including an elevationally inner region, a mid region elevationally outward of the...
US20160043219 SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE  
In accordance with an embodiment, a method for manufacturing a semiconductor component includes forming a first trench through a plurality of layers of compound semiconductor material. An...
US20160043218 SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE  
In accordance with an embodiment, a method for manufacturing a semiconductor component includes forming a first trench through a plurality of layers of compound semiconductor material. An...
US20160043199 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE  
According to a method of manufacturing a semiconductor device of embodiments, a first trench is formed in a first semiconductor layer of a first conductivity type, a second semiconductor layer of...
US20160043093 THREE DIMENSIONAL NAND STRING MEMORY DEVICES AND METHODS OF FABRICATION THEREOF  
A method of making a monolithic three dimensional NAND string includes forming a stack of alternating first and second material layers over a substrate, etching the stack to form a front side...
US20160035886 SEMICONDUCTOR DEVICE AND FORMATION THEREOF  
A semiconductor device and method of formation are provided. The semiconductor device includes a first active region adjacent a channel, the channel, and a second active region adjacent the...
US20160035881 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A super junction MOSFET includes a parallel pn layer including a plurality of pn junctions and in which an n-type drift region and a p-type partition region interposed between the pn junctions are...