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US20130016570 N-Channel Erasable Programmable Non-Volatile Memory  
In an embodiment of the invention, a method of fabricating a floating-gate NMOSFET (n-type metal-oxide semiconductor field-effect transistor) is disclosed. A silicide blocking layer (e.g. oxide,...
US20090309149 Memory cell arrangements and methods for manufacturing a memory cell arrangement  
In an embodiment, a memory cell arrangement is provided which may include a charge storing memory cell comprising a first active area running along a first direction, a second active area disposed...
US20090321814 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME  
A semiconductor memory device includes, in a memory region, a plurality of bit line diffusion layers, a plurality of word lines, and a plurality of memory elements composed of a bit line diffusion...
US20080169499 FLASH MEMORY USING STI STRUCTURE IN ELEMENT ISOLATION REGION AND MANUFACTURING METHOD THEREOF  
A flash memory includes a memory cell portion and peripheral circuit portion. The memory cell portion has first gate dielectric films formed on the main surface of a semiconductor substrate and...
US20070218629 Method of fabricating an integrated memory device  
Method of fabricating an integrated memory device including the steps of providing a semiconductor substrate, including an array region and a support region; providing GC-lines in said array region...
US20070161189 METHOD OF FABRICATING THE FLOATING GATE OF FLASH MEMORY DEVICE  
There is provided a method of forming a floating gate of a flash memory device, including forming a tunnel insulating layer over a semiconductor substrate; forming a floating gate conductive layer...
US20110316060 ELECTRONIC DEVICE INCLUDING A NONVOLATILE MEMORY CELL  
An electronic device can include a nonvolatile memory cell that includes a capacitor, a tunnel structure, a state transistor, and an access transistor. In an embodiment, the capacitor and tunnel...
US20100261324 Trap-charge non-volatile switch connector for programmable logic  
A nonvolatile trap charge storage cell selects a logic interconnect transistor uses in programmable logic applications, such as FPGA. The nonvolatile trap charge element is an insulator located...
US20080277713 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME  
A semiconductor memory includes a memory cell array area provided with first and second memory cells and having a first active area and a first element isolation area constituting a line & space...
US20070287253 Semiconductor memory device and manufacturing method thereof  
A nonvolatile semiconductor memory device having high charge retention characteristics and capable of improving leakage characteristics of a dielectric film disposed between a charge storage layer...
US20070108504 NON-VOLATILE MEMORY AND MANUFACTURING METHOD AND OPERATING METHOD THEREOF  
A non-volatile memory having a plurality of gate structures, a plurality of charge storage layers and two doped regions is provided. The gate structures are disposed on the substrate and connected...
US20070063262 NAND memory arrays  
A NAND memory array has a plurality of rows of memory cells and a plurality of columns of NAND strings of memory cells. Each NAND string is selectively connected to a bit line through a drain...
US20060278913 Non-volatile memory cells without diffusion junctions  
A plurality of memory cell stacks are formed over a substrate. The substrate does not have diffusion regions between each memory cell stack to link the memory cells. The cells are formed close...
US20050136595 Method for manufacturing semiconductor device  
A method for manufacturing a semiconductor device is provided including the steps of covering the first nitride film formed on the first oxide film within the first region where the first gate...
US20090127613 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME  
A nonvolatile semiconductor memory device comprises a memory cell array of plural memory cells arranged in matrix. Each memory cell includes a first gate insulator layer formed on a semiconductor...
US20070018342 Devices with nanocrystals and methods of formation  
An aspect relates to a method of growing nanoscale structures on a semiconductor substrate. According to various embodiments, nucleation sites are created on a surface of the substrate. The...
US20100315884 Non-volatile memory utilizing impact ionization and tunnelling and method of manufacturing thereof  
A non-volatile memory device (and method of manufacture) is disclosed and structured to enable a write operation using an ionization impact process in a first portion of the device and a read...
US20090273013 METHOD OF FORMING A SPLIT GATE MEMORY DEVICE AND APPARATUS  
A split-gate memory device has a select gate having a first work function overlying a first portion of a substrate. A control gate having a second work function overlies a second portion of the...
US20090050955 NONVOLATILE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A charge storage layer interposed between a memory gate electrode and a semiconductor substrate is formed shorter than a gate length of the memory gate electrode or a length of insulating films so...
US20080293197 METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE  
A method of manufacturing a semiconductor memory device includes forming a device separation film on a semiconductor substrate using a mask pattern for defining an entire source line region as an...
US20080026527 AN APPARATUS AND ASSOCIATED METHOD FOR MAKING A FLOATING GATE MEMORY DEVICE WITH INCREASED GATE COUPLING RATIO  
A method for fabricating a floating gate memory device comprises using self-aligned process for formation of a fourth poly layer over a partial gate structure that does not require an additional...
US20070252190 Nonvolatile memory device and method for manufacturing the same  
Provided are a nonvolatile memory device and a method for manufacturing the same. The nonvolatile memory device may include a semiconductor substrate, a floating gate, a second insulation layer, a...
US20070166903 Semiconductor structures formed by stepperless manufacturing  
A manufacturing method for an array of polysilicon fins built up into fin blocks that are aligned in a comb-like array occupying a wafer surface. By subsurface and supersurface contact, fin blocks...
US20060240622 Multi-channel semiconductor device and method of manufacturing the same  
Provided are a multi-channel semiconductor device and a method for manufacturing the semiconductor device through a simplified process. A sacrificial layer and a channel layer are alternately...
US20060110882 METHODS OF FORMING GATE STRUCTURE AND FLASH MEMORY HAVING THE SAME  
A method of forming a gate structure, including forming sequentially a gate dielectric layer, a conductive layer, a protective layer, a sacrificial layer, and a patterned mask layer over a...
US20120094450 MANUFACTURING METHOD OF MULTI-LEVEL CELL NOR FLASH MEMORY  
A manufacturing method of a multi-level cell NOR flash memory includes the steps of forming a memory cell area and a peripheral circuit area with the same depth of a shallow trench isolation...
US20090309152 Integrated Circuits Having a Contact Region and Methods for Manufacturing the Same  
In an embodiment, an integrated circuit having a memory cell arrangement is provided. The memory cell arrangement may include a substrate, a fin structure disposed above the substrate, and a memory...
US20080261366 NON-VOLATILE MEMORY DEVICE HAVING IMPROVED ERASE EFFICIENCY AND METHOD OF MANUFACTURING THE SAME  
A non-volatile memory device having an improved erase efficiency and a method of manufacturing the same are provided. The method includes: forming a stack structure of a tunnel dielectric layer, a...
US20070296021 Nonvolatile semiconductor memory with backing wirings and manufacturing method thereof  
A manufacturing method of a nonvolatile semiconductor memory includes steps (a) to (d). The (a) is a step of laminating a 2nd insulating film, a gate film and a hard mask film which cover a 1st...
US20070138538 Method of forming self-aligned floating gate array and flash memory device including self-aligned floating gate array  
Disclosed are a flash memory device including a self aligned floating gate array, and a method of forming the self aligned floating gate array for the flash memory device. The flash memory device...
US20070004140 Method of manufacturing a non-volatile semiconductor memory device  
In a method of manufacturing a non-volatile semiconductor memory device that includes a first region having a first gate structure and a second region having a second gate structure, the first gate...
US20090206391 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed on the semiconductor substrate at predetermined intervals, a selecting transistor arranged on each of...
US20090026460 VERTICAL NON-VOLATILE MEMORY AND MANUFACTURING METHOD THEREOF  
A manufacturing method of a vertical non-volatile memory is provided. A first semiconductor layer, a first barrier, a second semiconductor layer, a second barrier and a third semiconductor layer...
US20080251833 Integrated circuits and methods of manufacture  
In various embodiments of the invention, integrated circuits and methods of manufacturing integrated circuits are provided. In an embodiment of the invention, an integrated circuit having at least...
US20080211005 SEMICONDUCTOR DEVICE  
There is provided a MOSFET-type semiconductor device having a coating insulating film formed to cover the surface portions of MOS transistors formed on a semiconductor substrate. The insulating...
US20080048241 Nonvolatile semiconductor memory device and fabrication method therefor  
Disclosed herein is a nonvolatile semiconductor memory device, including a memory transistor. The memory transistor has: a channel formation region defined between two source and drain regions...
US20080031043 Non-volatile memory device  
According to an aspect of the present invention, there is provided a semiconductor device including a non-volatile semiconductor memory device, including a memory cell having a electrolyte film, a...
US20080014700 Methods for fabricating improved gate dielectrics  
Disclosed are a variety of methods for increasing the relative thickness in the peripheral or edge regions of gate dielectric patterns to suppress leakage through these regions. The methods provide...
US20070166917 Non-volatile memory device and fabricating method therefor  
A non-volatile memory device and fabricating method therefor are provided. The non-volatile memory device includes a substrate, a first insulating layer, a conductor layer, a second insulating...
US20070077707 Non volatile memory device and method of manufacturing the same  
The present invention provides a non-volatile memory device and a method of manufacturing the same. The non-volatile memory device includes: a semiconductor substrate including an active region...
US20070072369 NON-VOLATILE MEMORY AND FABRICATING METHOD THEREOF  
A non-volatile memory includes a substrate, a plurality of isolation layers, a plurality of active layers, a plurality of floating gates, a plurality of control gates and a plurality of doped...
US20130009231 Method for Efficiently Fabricating Memory Cells with Logic FETs and Related Structure  
According to one exemplary embodiment, a method for concurrently fabricating a memory region with a logic region in a common substrate includes forming a lower dielectric segment in the common...
US20110303964 NONVOLATILE MEMORY, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE  
Provided is a nonvolatile memory 10 having a selective gate SG formed below a silicon layer 14, which is to be a channel region formed between a source region S and a drain region D of a...
US20110101441 SELECT GATES FOR MEMORY  
Methods of forming memory and memory devices are disclosed, such as a memory device having a memory cell with a floating gate formed from a first conductor, a control gate formed from a second...
US20090230459 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME  
A non-volatile semiconductor memory device includes a memory string which is electrically rewritable and includes a plurality of memory cells connected in series. The memory string includes a...
US20090168529 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, METHOD FOR MANUFACTURING THE SAME, AND NONVOLATILE MEMORY ARRAY  
A floating gate made of polysilicon is provided on a semiconductor substrate through the medium of a gate insulator. A side-wall insulating film is provided on each side wall of the floating gate....
US20090127610 NON-VOLATILE MEMORY AND THE MANUFACTURING METHOD THEREOF  
A non-volatile memory disposed on a substrate includes active regions, a memory array, and contacts. The active regions defined by isolation structures disposed in the substrate are extended in a...
US20080079059 Method of manufacturing a nonvolatile semiconductor memory device and select gate device having a stacked gate structure  
A non-volatile semiconductor memory device, which is intended to prevent data destruction by movements of electric charges between floating gates and thereby improve the reliability, includes...
US20080076218 Memory device and method of manufacturing the same  
In a memory device and a method of manufacturing the memory device, a source contact connected to a common source line may be formed on a drain region instead of a source region. A transistor...
US20080009115 Method of manufacturing at least one semiconductor component and memory cells  
A method of manufacturing at least one NAND-coupled semiconductor component is disclosed. A layer structure is formed on or above a semiconductor substrate. The layer structure is patterned to...
Matches 201 - 250 out of 440 < 1 2 3 4 5 6 7 8 9 >