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US20110186915 REPLACEMENT GATE APPROACH BASED ON A REVERSE OFFSET SPACER APPLIED PRIOR TO WORK FUNCTION METAL DEPOSITION  
In a replacement gate approach, a spacer may be formed in the gate opening after the removal of the placeholder material, thereby providing a superior cross-sectional shape upon forming any...
US20140124874 Metal-Gate MOS Transistor and Method of Forming the Transistor with Reduced Gate-to-Source and Gate-to-Drain Overlap Capacitance  
The gate-to-source and gate-to-drain overlap capacitance of a MOS transistor with a metal gate and a high-k gate dielectric are reduced by forming the high-k gate dielectric along the inside of a...
US20110266626 GATE DEPLETION DRAIN EXTENDED MOS TRANSISTOR  
A drain extended MOS transistor configured to operate in a gate-depletion regime. Devices comprising such transistors are described together with fabrication processes for such devices and...
US20130023093 RECESSED CONTACT FOR MULTI-GATE FET OPTIMIZING SERIES RESISTANCE  
A method to fabricate a transistor including forming at least one electrically conductive channel structure over a substrate, the channel having a length, a width and a first height (h1); forming a...
US20120142150 METHOD FOR FORMING METAL GATE AND MOS TRANSISTOR  
The invention provides a method for forming a metal gate and a method for forming a MOS transistor. The method for forming a metal gate includes: providing a substrate; forming a sacrificial oxide...
US20080179638 GAP FILL FOR UNDERLAPPED DUAL STRESS LINERS  
A gap fill nitride is formed in an underlapping region between a first semiconductor area with a first stress liner and a second semiconductor area with a second stress liner without plugging other...
US20110306170 Novel Method to Improve Performance by Enhancing Poly Gate Doping Concentration in an Embedded SiGe PMOS Process  
A method for forming an embedded SiGe (eSiGe) PMOS transistor (102) with improved PMOS poly gate (108) doping concentration without increasing mask count and causing S/D overrun issue. After gate...
US20130288435 CET AND GATE CURRENT LEAKAGE REDUCTION IN HIGH-K METAL GATE ELECTRODE STRUCTURES BY HEAT TREATMENT AFTER DIFFUSION LAYER REMOVAL  
When forming high-k metal gate electrode structures by providing the gate dielectric material in an early manufacturing stage, the heat treatment or anneal process may be applied after...
US20120003798 REPLACEMENT GATES TO ENHANCE TRANSISTOR STRAIN  
Some embodiments of the present invention include apparatuses and methods relating to NMOS and PMOS transistor strain.
US20090174008 METHOD AND STRUCTURE TO PROTECT FETs FROM PLASMA DAMAGE DURING FEOL PROCESSING  
Protecting a FET from plasma damage during FEOL processing by forming a FET-like structure in conjunction with and adjacent to an FET, in a same well as the FET, but having a body doped opposite to...
US20130341704 VARIABLE GATE WIDTH FOR GATE ALL-AROUND TRANSISTORS  
Nanowire-based gate all-around transistor devices having one or more active nanowires and one or more inactive nanowires are described herein. Methods to fabricate such devices are also described....
US20080048272 SILICIDATION MONITORING PATTERN FOR USE IN SEMICONDUCTOR MANUFACTURING PROCESS  
A silicidation monitoring pattern may electrically measure resistance of a polygate line after silicidation to measure open and/or short-circuiting of the polygate line. A silicidation monitoring...
US20080048271 STRUCTURE AND METHOD TO USE LOW k STRESS LINER TO REDUCE PARASITIC CAPACITANCE  
A low k stress liner, which replaces conventional stress liners in CMOS devices, is provided. In one embodiment, a compressive, low k stress liner is provided which can improve the hole mobility in...
US20090321855 Boundaries with elevated deuterium levels  
A device is annealed in a deuterium atmosphere. Deuterium penetrates the device to a boundary, which is passivated by the deuterium.
US20130032901 FULL SILICIDATION PREVENTION VIA DUAL NICKEL DEPOSITION APPROACH  
Semiconductor devices are formed without full silicidation of the gates and with independent adjustment of silicides in the gates and source/drain regions. Embodiments include forming a gate on a...
US20140284725 MOS Transistor Structure and Method of Forming the Structure with Vertically and Horizontally-Elongated Metal Contacts  
Elongated metal contacts with longitudinal axes that lie in a first direction are formed to make electrical connections to elongated source and drain regions with longitudinal axes that lie in the...
US20050077553 Methods of forming multi fin FETs using sacrificial fins and devices so formed  
Methods of forming multi fin Field Effect Transistors (FET) can include forming a first fin having opposing sidewalls protruding from a substrate and epitaxially growing second fins on the opposing...
US20090236670 Semiconductor Device and a Manufacturing Process Thereof  
A semiconductor device has a plurality of drain metal blocks, a plurality of source metal blocks, a plurality of polysilicon strips, a first source metal strip, a first drain metal strip, and a...
US20120098075 INTEGRATED ELECTRONIC DEVICE FOR DETECTING MOLECULES AND METHOD OF MANUFACTURE THEREOF  
An integrated electronic device for detecting gases or biological molecules having a microchip comprising integrated electronics manufactured by the CMOS process. The microchip includes a...
US20070004116 Trenched MOSFET termination with tungsten plug structures  
A metal oxide semiconductor field effect transistor (MOSFET) device includes a termination area. The termination area has a trenched gate runner electrically connected to a trenched gate of said...
US20130295734 METHOD FOR FORMING GATE, SOURCE, AND DRAIN CONTACTS ON A MOS TRANSISTOR  
A method for forming gate, source, and drain contacts on a MOS transistor having an insulated gate including polysilicon covered with a metal gate silicide, this gate being surrounded with at least...
US20140099764 GRAPHENE DEVICE INCLUDING A PVA LAYER OR FORMED USING A PVA LAYER  
An apparatus or method can include forming a graphene layer including a working surface, forming a polyvinyl alcohol (PVA) layer upon the working surface of the graphene layer, and forming a...
US20090309162 SEMICONDUCTOR DEVICE HAVING DIFFERENT FIN WIDTHS  
A semiconductor device includes at least one source region and at least one drain region. A plurality of fins extend between a source region and a drain region, wherein at least one fin has a...
US20070196988 Poly pre-doping anneals for improved gate profiles  
A semiconductor process and apparatus uses a predetermined sequence of patterning and etching steps to etch a gate stack (32) formed over a substrate (11), thereby forming an etched gate (92, 94)...
US20130193516 SRAM INTEGRATED CIRCUITS AND METHODS FOR THEIR FABRICATION  
SRAM ICs and methods for their fabrication are provided. One method includes forming dummy gate electrodes overlying a semiconductor substrate and defining locations of gate electrodes for two...
US20110097858 Transition metal alloys for use as a gate electrode and devices incorporating these alloys  
Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or...
US20090042346 Electrolyte pattern and method for manufacturing an electrolyte pattern  
A method for manufacturing a gel electrolyte pattern is disclosed, the method comprising depositing an electrolyte precursor by inkjet printing onto a gelling agent layer. A gel electrolyte pattern...
US20080261358 Manufacture of Lateral Semiconductor Devices  
A method of manufacturing a lateral semiconductor device comprising a semiconductor body (2) having top and bottom major surfaces (2a, 2b), the body including a drain drift region (6a) of a first...
US20140252412 Strained and Uniform Doping Technique for FINFETs  
The present disclosure relates to a device and method of forming enhanced channel carrier mobility within a transistor. Silicon carbon phosphorus (SiCP) source and drain regions are formed within...
US20140021445 GRAPHENE ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME  
The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the...
US20120256167 GRAPHENE ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME  
The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the...
US20120056249 INTERLAYER FOR ELECTRONIC DEVICES  
Embodiments in accordance with the present invention provide for the use of polycycloolefins in electronic devices and more specifically to the use of such polycycloolefins as interlayers applied...
US20070224748 SEMICONDUCTOR BODY COMPRISING A TRANSISTOR STRUCTURE AND METHOD FOR PRODUCING A TRANSISTOR STRUCTURE  
A semiconductor body includes a substrate, a buried zone having a first conductivity type that is formed in the substrate, a first zone having the first conductivity type that is above the buried...
US20140027862 RF CMOS TRANSISTOR DESIGN  
An improved RF CMOS transistor design is described. Local, narrow interconnect lines, which are located substantially above the active area of the transistor, are each connected to either a source...
US20110241126 RF CMOS TRANSISTOR DESIGN  
An improved RF CMOS transistor design is described. Local, narrow interconnect lines, which are located substantially above the active area of the transistor, are each connected to either a source...
US20130277764 Etch Stop Layer Formation In Metal Gate Process  
A method of forming a semiconductor device that includes forming a metal gate conductor of a gate structure on a channel portion of a semiconductor substrate. A gate dielectric cap is formed on the...
US20140145243 GROUP III-NITRIDE-BASED TRANSISTOR WITH GATE DIELECTRIC INCLUDING A FLUORIDE - OR CHLORIDE- BASED COMPOUND  
Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer...
US20050250272 Biosensor performance enhancement features and designs  
Isolation of semiconductor based biosensors is described. The present invention is directed to prevention of undesirable influences including, but not limited to, chip leakage current. Several...
US20130193494 TRANSISTOR WITH COUNTER-ELECTRODE CONNECTION AMALGAMATED WITH THE SOURCE/DRAIN CONTACT  
The field effect device includes an active area made from semi-conducting material and a gate electrode separated from the active area by a dielectric gate material. A counter-electrode is...
US20110210403 NOVEL STRUCTURES AND METHODS TO STOP CONTACT METAL FROM EXTRUDING INTO REPLACEMENT GATES  
The methods and structures described are used to prevent protrusion of contact metal (such as W) horizontally into gate stacks of neighboring devices to affect the work functions of these...
US20100090269 TRANSISTOR STRUCTURE HAVING A TRENCH DRAIN  
A semiconductor device is formed having a trench adjacent to a current carrying region of the device. The trench is formed having a depth greater than the depth of a tub region of the device....
US20120161202 JUNCTIONLESS ACCUMULATION-MODE DEVICES ON PROMINENT ARCHITECTURES, AND METHODS OF MAKING SAME  
A junctionless accumulation-mode (JAM) semiconductive device is isolated from a semiconducive substrate by a reverse-bias band below a prominent feature of a JAM semiconductive body. Processes of...
US20110230021 Inverter, method of manufacturing the same, and logic circuit including the inverter  
Provided are an inverter, a method of manufacturing the inverter, and a logic circuit including the inverter. The inverter may include a first transistor and a second transistor having different...
US20140319616 METHOD FOR PRODUCING A METAL-GATE MOS TRANSISTOR, IN PARTICULAR A PMOS TRANSISTOR, AND CORRESPONDING INTEGRATED CIRCUIT  
At least one MOS transistor is produced by forming a dielectric region above a substrate and forming a gate over the dielectric region. The gate is formed to include a metal gate region. Formation...
US20090166686 Edge-Contacted Vertical Carbon Nanotube Transistor  
A vertical device geometry for a carbon-nanotube-based field effect transistor has one or multiple carbon nanotubes formed in a trench.
US20130316511 SUPERIOR STABILITY OF CHARACTERISTICS OF TRANSISTORS HAVING AN EARLY FORMED HIGH-K METAL GATE  
When forming sophisticated transistors on the basis of a high-k metal gate electrode structure and a strain-inducing semiconductor alloy, a superior wet cleaning process strategy is applied after...
US20080272361 High Density Nanotube Devices  
Carbon-nanotube-based devices or nanowire-based devices are formed in multiple layers to obtain higher density of such devices. The layers may be all similar such as all carbon-nanotube-based...
US20130240989 SELECTIVE GERMANIUM P-CONTACT METALIZATION THROUGH TRENCH  
Techniques are disclosed for forming transistor devices having reduced parasitic contact resistance relative to conventional devices. The techniques can be implemented, for example, using a...
US20120132998 Replacement Metal Gate Structures Providing Independent Control On Work Function and Gate Leakage Current  
The thickness and composition of a gate dielectric can be selected for different types of field effect transistors through a planar high dielectric constant material portion, which can be provided...
US20090108305 SEMICONDUCTOR HAVING A CORNER COMPENSATION FEATURE AND METHOD  
A semiconductor device includes an active semiconductor material. A transistor gate overlies a first portion of the active semiconductor material. A second portion intersects the first portion at a...