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US20100171155 Body-biased Silicon-On-Insulator Junction Field-Effect Transistor Having A Fully Depleted Body and Fabrication Method Therefor  
Silicon-on-insulator JFET having a body bias and a fully depleted body and fabrication methods therefore are disclosed. SOI JFETs offer leakage advantages over bulk silicon JFETs. However, some...
US20100155743 SiC SEMICONDUCTOR DEVICE WITH SELF-ALIGNED CONTACTS, INTEGRATED CIRCUIT AND MANUFACTURING METHOD  
One aspect includes a semiconductor device with self-aligned contacts, integrated circuit and manufacturing method. One embodiment provides gate control structures. Each of the gate control...
US20080099796 Device with patterned semiconductor electrode structure and method of manufacture  
A method of forming a semiconductor device can include forming a first layer of semiconductor material in contact with a first area of a substrate. The first area can be adjacent to at least one...
US20070262369 Semiconductor device, method of fabricating the same, and patterning mask utilizied by the method  
A semiconductor device. The device comprises an active region isolated by an isolation structure on a substrate. The device further comprises a gate electrode extending across the active area and...
US20170047394 SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE  
In a silicon carbide semiconductor device, a trench penetrates a source region and a first gate region and reaches a drift layer. On an inner wall of the trench, a channel layer of a first...
US20160343833 TRANSISTOR WITH CHARGE ENHANCED FIELD PLATE STRUCTURE AND METHOD  
Transistors and methods of fabricating are described herein. These transistors include a field plate (108) and a charged dielectric layer (106) overlapping at least a portion of a gate electrode...
US20160071835 METAL GATE FOR ROBUST ESD PROTECTION  
A method of forming a metal gate diode ESD protection device and the resulting device are provided. Embodiments include forming a metal gate diode including a metal gate on a substrate; forming an...
US20160064449 METHOD OF MANUFACTURING JUNCTION FIELD EFFECT TRANSISTOR, METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS, METHOD OF MANUFACTURING IMAGING APPARATUS, JUNCTION FIELD EFFECT TRANSISTOR, AND IMAGING APPARATUS  
A method of manufacturing a junction field effect transistor having a channel region disposed in a semiconductor substrate, deeper than one of a source region and a drain region, the method...
US20160020335 TRANSISTORS COMPRISING DOPED REGION-GAP-DOPED REGION STRUCTURES AND METHODS OF FABRICATION  
Embodiments of the present invention provide transistors with controlled junctions and methods of fabrication. A dummy spacer is used during the majority of front end of line (FEOL) processing....
US20150236029 JUNCTION FIELD-EFFECT FLOATING GATE QUANTUM DOT MEMORY SWITCH  
A dense binary memory switch device combines the function of a pass transistor and a memory cell and has low programming and operation voltages. The device includes a charge storage region coupled...
US20140145212 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device includes a silicon carbide semiconductor substrate, a transistor formed in a cell region of the semiconductor substrate, and a voltage-breakdown-resistant structure formed...
US20140061731 Tunable Schottky Diode  
A device includes a semiconductor substrate, first and second electrodes supported by the semiconductor substrate, laterally spaced from one another, and disposed at a surface of the semiconductor...
US20130265102 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor structure and method for manufacturing the same are provided. The semiconductor structure includes a substrate having a first conductive type; a deep well having a second...
US20130260517 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE  
A method for fabricating a semiconductor device includes: forming a first film on a nitride semiconductor layer so as to contact the nitride semiconductor layer and have a thickness equal to or...
US20130248944 JUNCTION TYPE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF  
According to one embodiment, a junction type field effect transistor includes a first conductive type semiconductor substrate, a first conductive type drift layer, a second conductive type gate...
US20130140583 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
First, third, and fourth regions have a first conductivity type, and a second region has a second conductivity type. The second region is provided with a plurality of through holes exposing the...
US20120256238 Junction Field Effect Transistor With An Epitaxially Grown Gate Structure  
A method of fabricating a semiconductor device that includes forming a replacement gate structure on a portion of a semiconductor substrate, wherein source regions and drain regions are formed in...
US20120181583 JUNCTION FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF  
A junction field effect transistor includes a lower P-type substrate layer of a semiconductor substrate; an N-type channel layer which may be formed on and/or over the P-type substrate layer...
US20120080728 SEMICONDUCTOR DEVICE WITH JUNCTION FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD OF THE SAME  
A semiconductor device with a JFET is disclosed. The semiconductor device includes a trench and a contact embedded layer formed in the trench. A gate wire is connected to the contact embedded...
US20120021572 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE  
A method for fabricating a semiconductor device includes forming ohmic electrodes on a source region and a drain region of a nitride semiconductor layer, forming a low-resistance layer between an...
US20110207270 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device includes a substrate, a compound semiconductor layer formed over the substrate, and a protective insulating film composed of silicon nitride, which is formed over a surface...
US20110156052 Semiconductor device having JFET and method for manufacturing the same  
A semiconductor device having a JFET includes: a substrate made of semi-insulating semiconductor material; a gate region in a surface portion of the substrate; a channel region disposed on and...
US20110001144 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A JFET is a semiconductor device allowing more reliable implementation of the characteristics essentially achievable by employing SiC as a material and includes a wafer having at least an upper...
US20100295102 NORMALLY-OFF INTEGRATED JFET POWER SWITCHES IN WIDE BANDGAP SEMICONDUCTORS AND METHODS OF MAKING  
Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated...
Matches 51 - 74 out of 74 < 1 2