Matches 1 - 44 out of 44


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US20110136304 Techniques to Enhance Selectivity of Electrical Breakdown of Carbon Nanotubes  
Techniques are used to fabricate carbon nanotube devices. These techniques improve the selective removal of undesirable nanotubes such as metallic carbon nanotubes while leaving desirable...
US20140154847 SPATIAL ORIENTATION OF THE CARBON NANOTUBES IN ELECTROPHORETIC DEPOSITION PROCESS  
A new method of electrophoretic nanotube deposition is proposed wherein individual nanotubes are placed on metal electrodes which have their length significantly exceeding their width, while the...
US20130168641 NANO METAL PARTICLES BASED TUNNELING FIELD EFFECT TRANSISTOR AND NANO-SWITCH  
A new devices structure of nano tunneling field effect transistor based on nano metal particles is introduced. The nano semiconductor device, comprising a source and a drain, wherein each of the...
US20070087493 Trench schottky device with single barrier  
A process for forming a trench Schottky barrier device includes the forming of an oxide layer within the trenches in the surface of a silicon wafer, and then depositing a full continuous metal...
US20120146049 JFET DEVICES WITH INCREASED BARRIER HEIGHT AND METHODS OF MAKING THE SAME  
Devices and methods for providing JFET transistors with improved operating characteristics are provided. Specifically, one or more embodiments of the present invention relate to JFET transistors...
US20050133829 High-frequency semiconductor device  
A high-frequency semiconductor device includes: a first cell which includes of gate electrodes on a surface of an epitaxial layer of a substrate, drain electrodes and source electrodes alternately...
US20100301400 SCHOTTKY DIODE  
Improved Schottky diodes (20, 20′) with reduced leakage current and improved breakdown voltage are provided by building a JFET with its current path (50, 50′) of a first conductivity type serially...
US20050202614 Laser diode device with nitrogen incorporating barrier  
In an active region of an optical-electronic semiconductor device, nitrogen is incorporated in a barrier adjacent a GaNAs-based (e.g., GaInNAs) quantum well to improve device performance at...
US20120112202 E-Mode High Electron Mobility Transistors And Methods Of Manufacturing The Same  
An Enhancement-mode (E-mode) high electron mobility transistor (HEMT) includes a channel layer with a 2-Dimensional Electron Gas (2DEG), a barrier layer inducing the 2DEG in the channel layer,...
US20070292999 Transistors Having Implanted Channel Layers and Methods of Fabricating the Same  
A MESFET includes a silicon carbide layer, spaced apart source and drain regions in the silicon carbide layer, a channel region positioned within the silicon carbide layer between the source and...
US20100187577 SCHOTTKY DIODE  
Improved Schottky diodes (20) with reduced leakage current and improved breakdown voltage are provided by building a JFET (56) into the diode, serially located in the anode-cathode current path...
US20060223247 Schottky junction diode devices in CMOS  
A Schottky junction diode device having improved performance is fabricated in a conventional CMOS process. A substrate including a material doped to a first conductivity type is formed. A first...
US20070138515 Dual field plate MESFET  
A dual field plate MESFET and method of forming a dual field plate MESFET are provided. The MESFET includes a gate electrode and a drain electrode, with the gate electrode and drain electrode...
US20100019249 JFET Devices with Increased Barrier Height and Methods of Making Same  
Devices and methods for providing JFET transistors with improved operating characteristics are provided. Specifically, one or more embodiments of the present invention relate to JFET transistors...
US20090189200 SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF THE SEMICONDUCTOR DEVICE  
A semiconductor device and a fabrication method of the semiconductor device, the semiconductor device including: a gate electrode, a source electrode, and a drain electrode which are placed on a...
US20140295628 MOS P-N JUNCTION SCHOTTKY DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A MOS P-N junction Schottky diode device includes a substrate having a first conductivity type, a field oxide structure defining a trench structure, a gate structure formed in the trench structure...
US20090065814 MOS device with schottky barrier controlling layer  
A semiconductor device is formed on a semiconductor substrate. The semiconductor device comprises a drain, an epitaxial layer overlaying the drain, and an active region. The active region...
US20050282320 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device includes forming a gate electrode on a semiconductor substrate, forming a resist on the semiconductor substrate so that the resist contacts only...
US20140091308 SELF-ALIGNED STRUCTURES AND METHODS FOR ASYMMETRIC GAN TRANSISTORS & ENHANCEMENT MODE OPERATION  
Embodiments include high electron mobility transistors (HEMT). In embodiments, a gate electrode is spaced apart by different distances from a source and drain semiconductor region to provide high...
US20070249109 Optical device and optical module  
A high resistance re-grown layer is disposed around an optical device having a mesa structure. Thus, a mesa portion having a plane direction that appears in etching of a circular main structure is...
US20130105817 HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE AND METHOD  
Embodiments of the present disclosure describe structural configurations of an integrated circuit (IC) device such as a high electron mobility transistor (HEMT) switch device and method of...
US20050067693 Semiconductor device and manufacturing method thereof  
Disclosed is a semiconductor device including a SiC substrate and a heat conductor formed in a hole in the SiC substrate and made of a linear structure of carbon elements.
US20110180850 Configuration and manufacturing method of low-resistance gate structures for semiconductor devices and circuits  
The present invention provides methods for fabricating devices with low resistance structures involving a lift-off process. A radiation blocking layer is introduced between two resist layers in...
US20100032730 Semiconductor device and method of making the same  
A method of making a semiconductor device includes forming a p-type semiconductor region to an n-type semiconductor substrate in such a manner that the p-type semiconductor region is partially...
US20110284931 transistor device and manufacture method  
A transistor device sequentially comprises a semiconductor substrate, a drain, a source, a gate metal seed layer and a gate Schottky contact. The gate metal seed layer comprises a gelatinous...
US20100320508 HORIZONTALLY DEPLETED METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR  
The present invention provides a horizontally depleted Metal Semiconductor Field Effect Transistor (MESPET). A drain region, a source region, and a channel region are formed in the device layer...
US20100001318 Field effect transistor, method of manufacturing the same, and semiconductor device  
A J-FET includes a channel layer of a first conductivity type (a Si-doped n-type AlGaAs electron supply layers 3 and 7, undoped AlGaAs spacer layers 4 and 6, and an undoped InGaAs 5 channel layer...
US20080258242 Low contact resistance ohmic contact for a high electron mobility transistor and fabrication method thereof  
A semiconductor device (100) is formed on a semi-insulating semiconductor substrate (101) including a channel layer (104), a spacer layer (105), an electron supply layer (106), and a barrier layer...
US20150236017 METHOD OF MANUFACTURING PRECISE SEMICONDUCTOR CONTACTS  
A first dielectric layer including a first opening is provided on a first surface of a semiconductor layer. A second dielectric layer is provided on top of the first dielectric layer in the first...
US20120025279 LOW SCHOTTKY BARRIER SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME  
A low Schottky barrier semiconductor structure is provided, comprising: a substrate; a SiGe layer with low Ge content formed on the substrate; a channel layer with high Ge content formed on the...
US20100123172 SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE  
A substrate composed of hexagonally crystalline SiC is prepared such that its main surface is in the direction at which the minimum angle between the main surface and a plane perpendicular to the...
US20070108547 Second Schottky contact metal layer to improve GaN Schottky diode performance  
A Schottky contact is disposed atop a surface of a semiconductor. A first Schottky contact metal layer is disposed atop a first portion of the semiconductor surface. A second Schottky contact...
US20050258459 Method for fabricating semiconductor devices having a substrate which includes group III-nitride material  
A method for fabricating a device having a substrate comprising III-N material, such as gallium nitride or aluminum gallium nitride. A surface of the substrate comprising group III-N is oxidized...
US20140091315 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE  
A semiconductor device includes an electron transit layer formed on a substrate; an electron supply layer formed on the electron transit layer; a doping layer formed on the electron supply layer,...
US20130320350 Compound Semiconductor Transistor with Self Aligned Gate  
A transistor device includes a compound semiconductor body having a first surface and a two-dimensional charge carrier gas disposed below the first surface in the compound semiconductor body. The...
US20130270615 METHOD FOR MAKING TRANSISTORS  
A method of making a transistor, comprising: providing a semiconductor substrate; forming a gate stack over the semiconductor substrate; forming an insulating layer over the semiconductor...
US20130161709 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device includes a carrier transit layer above a substrate, a carrier supply layer above the carrier transit layer, an etching stopper layer above the carrier supply layer, the...
US20130122669 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE  
A method for manufacturing a semiconductor device includes: forming a first active region, a second active region, an inactive region located between the first active region and the second active...
US20130069116 METHOD OF FORMING A SEMICONDUCTOR STRUCTURE  
A semiconductor structure is disclosed. The semiconductor structure includes a first layer. A second layer is disposed on the first layer and different from the first layer in composition. An...
US20120211760 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND POWER SUPPLY APPARATUS  
A semiconductor device includes a nitride semiconductor stacked structure including a carrier transit layer and a carrier supply layer; a p-type nitride semiconductor layer provided over the...
US20120049955 COMPOUND SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, POWER SUPPLY DEVICE AND HIGH-FREQUENCY AMPLIFIER  
A compound semiconductor device includes a substrate having an opening formed from the rear side thereof; a compound semiconductor layer disposed over the surface of the substrate; a local p-type...
US20110278590 Semiconductor Devices Having Gates Including Oxidized Nickel and Related Methods of Fabricating the Same  
Schottky barrier semiconductor devices are provided including a wide bandgap semiconductor layer and a gate on the wide bandgap semiconductor layer. The gate includes a metal layer on the wide...
US20110260217 SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME  
There is provided a semiconductor apparatus capable of achieving both a reverse blocking characteristic and a low on-resistance. The semiconductor apparatus includes a first semiconductor layer...
US20110186861 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor device having a JFET or a MESFET mainly includes a semiconductor substrate, a first conductivity type semiconductor channel layer on the substrate, a first conductivity type...

Matches 1 - 44 out of 44