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Match Document Document Title
US20090280598 Formation of Copper-Indium-Selenide and/or Copper-Indium-Gallium-Selenide Films from Indium Selenide and Copper Selenide Precursors  
Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent,...
US20140242748 METHODS OF FORMING GERMANIUM-ANTIMONY-TELLURIUM MATERIALS AND CHALCOGENIDE MATERIALS  
Methods of forming a material include exposing a substrate to a first germanium-containing compound and a second, different germanium-containing compound; exposing the substrate to a first...
US20110117696 CdTe SURFACE TREATMENT FOR STABLE BACK CONTACTS  
Disclosed are etching compositions and processes of using the same for etching the surface of CdTe-containing layers.
US20090256127 Compounds for Depositing Tellurium-Containing Films  
Disclosed herein are tellurium metal-organic precursors and methods for depositing tellurium-containing films on a substrate.
US20090039463 FUSE BOX AND METHOD FOR FABRICATING THE SAME AND METHOD FOR REPAIRING THE SAME IN SEMICONDUCTOR DEVICE  
A fuse box in a semiconductor device having a fuse line formed in a fuse line region to form a conductive pattern; wherein the conductive pattern has an empty space in the center thereof and a...
US20090052230 INTEGRATED CIRCUIT INCLUDING SILICIDE REGION TO INHIBIT PARASITIC CURRENTS  
An integrated circuit is disclosed. One embodiment includes a first diode, a second diode, and a semiconductor line coupled to the first diode and the second diode. The line includes a first...
US20080149909 Pillar phase change memory cell  
A memory cell includes a first electrode, a storage location, and a second electrode. The storage location includes a phase change material and contacts the first electrode. The storage location...
US20090250677 Reducing drift in chalcogenide devices  
Chalcogenide materials conventionally used in chalcogenide memory devices and ovonic threshold switches may exhibit a tendency called drift, wherein threshold voltage or resistance changes with...
US20110168966 DEPOSITION OF AMORPHOUS PHASE CHANGE MATERIAL  
A method for formation of a phase change memory (PCM) cell includes depositing amorphous phase change material in a via hole, the via hole comprising a bottom and a top, such that the amorphous...
US20100163818 FORMING A CARBON PASSIVATED OVONIC THRESHOLD SWITCH  
By making an ovonic threshold switch using a carbon interfacial layer having a thickness of less than or equal to ten percent of the thickness of the associated electrode, cycle endurance may be...
US20110143492 METHOD OF P-TYPE DOPING OF CADMIUM TELLURIDE  
A method of p-type doping cadmium telluride (CdTe) is disclosed. The method comprising the steps of, (a) providing a first component comprising cadmium telluride (CdTe) comprising an interfacial...
US20120094431 Liquid precursor for deposition of indium selenide and method of preparing the same  
Liquid precursors containing indium and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid...
US20090039329 Integrated Circuit Having a Cell with a Resistivity Changing Layer  
In an embodiment of the invention, an integrated circuit having a cell is provided. The cell may include a field effect transistor structure which includes a gate stack and a resistivity changing...
US20140024173 Method of Making a Multicomponent Film  
Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit...
US20120220076 Method of Making a Multicomponent Film  
Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit...
US20090142881 Tellurium (Te) Precursors for Making Phase Change Memory Materials  
Tellurium (Te)-containing precursors, Te containing chalcogenide phase change materials are disclosed in the specification. A method of making Te containing chalcogenide phase change materials...
US20080121862 Bottom electrode geometry for phase change memory  
A PCRAM cell has a gradated or layered resistivity bottom electrode with higher resistivity closer to a phase change material, to provide partial heating near the interface between the cell and...
US20090001337 Phase Change Memory Cell with Vertical Transistor  
A memory cell in an integrated circuit is fabricated in part by forming a lower electrode feature, an island, a sacrificial feature, a gate feature, and a phase change feature. The island is...
US20090215225 TELLURIUM COMPOUNDS USEFUL FOR DEPOSITION OF TELLURIUM CONTAINING MATERIALS  
Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such...
US20100062562 Methods Utilizing Microwave Radiation During Formation Of Semiconductor Constructions  
Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction....
US20140329357 TELLURIUM COMPOUNDS USEFUL FOR DEPOSITION OF TELLURIUM CONTAINING MATERIALS  
Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such...
US20090294749 Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same  
A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water and iron or an iron compound. The slurry...
US20100078621 METHOD TO REDUCE RESET CURRENT OF PCM USING STRESS LINER LAYERS  
A memory cell structure and method for forming the same. The method includes forming a via within a dielectric layer. The via is formed over the center of an electrically conducting bottom...
US20110027939 Methods of Forming Variable Resistance Memory Cells, and Methods of Etching Germanium, Antimony, and Tellurium-Comprising Materials  
A method of etching a material that includes comprising germanium, antimony, and tellurium encompasses exposing said material to a plasma-enhanced etching chemistry comprising Cl2 and CH2F2. A...
US20090140232 Resistive Memory Element  
An integrated circuit including a resistive memory element is described. The resistive memory element includes a first solid electrolyte layer including a metal doped glass material, the glass...
US20120315724 METHOD AND APPARATUS FOR DEPOSITION OF SELENIUM THIN-FILM AND PLASMA HEAD THEREOF  
A method for deposition of a selenium thin-film includes the following steps. First, a plasma head is provided. Then, a substrate is supported in an atmospheric pressure. Next, a solid-state...
US20090305458 ANTIMONY AND GERMANIUM COMPLEXES USEFUL FOR CVD/ALD OF METAL THIN FILMS  
Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making...
US20090020742 SOLID ELECTROLYTE SWITCHING ELEMENT, AND FABRICATION METHOD OF THE SOLID ELECTROLYTE ELEMENT, AND INTEGRATED CIRCUIT  
The switching element of the present invention is of a configuration that includes: a first electrode (14) and a second electrode (15) provided separated by a prescribed distance; a solid...
US20090162973 GERMANIUM PRECURSORS FOR GST FILM DEPOSITION  
A method for depositing a germanium containing film on a substrate is disclosed. A reactor, and at least one substrate disposed in the reactor, are provided. A germanium containing precursor is...
US20110057162 IN VIA FORMED PHASE CHANGE MEMORY CELL WITH RECESSED PILLAR HEATER  
A method for fabricating a phase change memory device including a plurality of in via phase change memory cells includes forming pillar heaters formed of a conductive material along a contact...
US20080316793 INTEGRATED CIRCUIT INCLUDING CONTACT CONTACTING BOTTOM AND SIDEWALL OF ELECTRODE  
An integrated circuit includes a first electrode, a second electrode, and resistivity changing material between the first electrode and the second electrode. The integrated circuit includes a...
US20110001111 THERMALLY INSULATED PHASE CHANGE MATERIAL CELLS  
A memory cell structure and method for forming the same. The method includes forming a pore within a dielectric layer. The pore is formed over the center of an electrically conducting bottom...
US20140206136 ANTIMONY COMPOUNDS USEFUL FOR DEPOSITION OF ANTIMONY-CONTAINING MATERIALS  
Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such...
US20110111556 ANTIMONY COMPOUNDS USEFUL FOR DEPOSITION OF ANTIMONY-CONTAINING MATERIALS  
Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such...
US20130306927 ATOMIC LAYER DEPOSITION OF A METAL CHALCOGENIDE MATERIAL AND RELATED MEMORY CELLS AND METHODS OF FORMING MEMORY CELLS  
A method of forming a metal chalcogenide material. The method comprises introducing a metal precursor and a chalcogenide precursor into a chamber, and reacting the metal precursor and the...
US20090020743 SEMICONDUCTOR STRUCTURE, IN PARTICULAR PHASE CHANGE MEMORY DEVICE HAVING A UNIFORM HEIGHT HEATER  
A phase change memory formed by a plurality of phase change memory devices having a chalcogenide memory region extending over an own heater. The heaters have all a relatively uniform height. The...
US20090321730 COMPOSITIONS OF DOPED, CO-DOPED AND TRI-DOPED SEMICONDUCTOR MATERIALS  
Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in...
US20090219755 INTEGRATED CIRCUIT INCLUDING AN ELECTRODE HAVING AN OUTER PORTION WITH GREATER RESISTIVITY  
An integrated circuit includes a first electrode including an inner portion and an outer portion laterally surrounding the inner portion. The outer portion has a greater resistivity than the inner...
US20080102560 Method of forming phase change memory devices in a pulsed DC deposition chamber  
A phase change memory including an ovonic threshold switch is formed using a pulsed direct current (DC) deposition chamber using pulsed DC. Pulsed DC is used to deposit a chalcogenide film. Pulsed...
US20100044665 ELECTRONIC COMPONENT, AND A METHOD OF MANUFACTURING AN ELECTRONIC COMPONENT  
An electronic component (100) comprising a matrix (102) and a plurality of islands (103) embedded in the matrix (102) and comprising a material which is convertible between at least two states...
US20090050873 System Including Memory with Resistivity Changing Material and Method of Making the Same  
A method of manufacturing a memory cell includes: forming a first electrode, depositing a first insulator material over the first electrode, forming a via in the first insulator material,...
US20090026437 Copper compatible chalcogenide phase change memory with adjustable threshold voltage  
A phase change memory cell may include two or more stacked or unstacked series connected memory elements. The cell has a higher, adjustable threshold voltage. A copper diffusion plug may be...
US20140308776 Methods of Forming Phase Change Materials and Methods of Forming Phase Change Memory Circuitry  
A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form...
US20140073084 Methods of Forming Phase Change Materials and Methods of Forming Phase Change Memory Circuitry  
A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form...
US20090185411 INTEGRATED CIRCUIT INCLUDING DIODE MEMORY CELLS  
The integrated circuit includes a first metal line and a first diode coupled to the first metal line. The integrated circuit includes a first resistivity changing material coupled to the first...
US20090191367 MEMORY DEVICES, STYLUS-SHAPED STRUCTURES, ELECTRONIC APPARATUSES, AND METHODS FOR FABRICATING THE SAME  
An exemplary hollow stylus-shaped structure is disclosed, including a hollow column spacer formed over a base layer and a hollow cone spacer stacked over the hollow column spacer, wherein the...
US20090263934 METHODS OF FORMING CHALCOGENIDE FILMS AND METHODS OF MANUFACTURING MEMORY DEVICES USING THE SAME  
A method of forming a chalcogenide film is provided which includes forming a germanium film on a substrate by exposing the substrate to a germanium source and a first antimony source, and growing...
US20130112933 GERMANIUM ANTIMONY TELLURIDE MATERIALS AND DEVICES INCORPORATING SAME  
A chalcogenide alloy composition, having an atomic composition comprising from 34 to 45 Ge, from 2 to 16% Sb, from 48 to 55% Te, from 3 to 15% carbon and from 1 to 10% nitrogen, wherein all atomic...
US20080113464 Asymmetric chalcogenide device  
A semiconductor device with S-type negative differential resistance (e.g., phase change memory or threshold switch) may be formed with an asymmetric i-v curve. The asymmetric nature may be...
US20080182357 Method of forming a memory device with switching glass layer  
A memory device, such as a PCRAM, including a chalcogenide glass backbone material with germanium telluride glass and methods of forming such a memory device.

Matches 1 - 50 out of 368 1 2 3 4 5 6 7 8 >