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US20130070226 MARKER STRUCTURE AND METHOD OF FORMING THE SAME  
The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting...
US20140255827 PELLICLES WITH REDUCED PARTICULATES  
Pellicles for photomasks used in photolithographic manufacturing are described. A frame of a pellicle may include a recess formed in a side member and a locking member dimensioned to secure a...
US20130009846 INSERT FOR RADOMES AND METHODS OF MANUFACTURING INSERT FOR RADOMES  
Apparatuses such as inserts for radomes are described herein. The apparatuses and inserts including a metal layer having a frequency selective surface.
US20110300490 HIGH-RESOLUTION MICROSCOPY AND PHOTOLITHOGRAPHY DEVICES USING FOCUSING MICROMIRRORS  
The invention relates to large-field high-resolution microscopy and photolithography setups operating with polychromatic light. It includes the use of a plurality of focusing micromirrors.
US20130136897 RESISTS FOR LITHOGRAPHY  
New routes involving multi-step reversible photo-chemical reactions using two-step techniques to provide non-linear resist for lithography are described in this disclosure. They may provide...
US20130008869 Oblique Parts or Surfaces  
Various structures, such as microstructures and wall-like structures, can include parts or surfaces that are oblique. In some implementations, a cantilevered element includes a spring-like portion...
US20140030655 Enhanced Multi-Photon Imaging Resolution Method  
A method and a multi-photon photocurable composition are provided that allow for the formation of a three-dimensional microstructure having enhanced imaging resolution. The method involves...
US20140234780 LITHOGRAPHY WITH REDUCED FEATURE PITCH USING ROTATING MASK TECHNIQUES  
Embodiments of the present invention are directed to techniques for obtaining patterns of features. One set of techniques uses multiple-pass rolling mask lithography to obtain the desired feature...
US20140011120 EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK  
A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are...
US20110033801 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST  
Coating compositions for use with an overcoated photoresist are provided where the coating composition comprises a resin containing cyanurate groups and hydrophobic groups. The coating composition...
US20100028813 BACKSIDE CLEANING OF SUBSTRATE  
A pellicle cover, system, and method for cleaning a photomask are disclosed. A pellicle cover is disposed over a photomask and pellicle without damaging the markings surrounding the mask pattern...
US20120244477 PELLICLE FOR LITHOGRAPHY  
The invention provides a pellicle for lithography used in the photolithography, affording a wider range of transmissivity to inclinedly incident beams that can be used in a photolithographic...
US20140038103 LITHOGRAPHY USING PHOTORESIST WITH PHOTOINITIATOR AND PHOTOINHIBITOR  
Technologies are generally described for a photoresist and methods and systems effective to form a pattern in a photoresist on a substrate. In some examples, the photoresist includes a resin, a...
US20120107743 LITHOGRAPHY USING PHOTORESIST WITH PHOTOINITIATOR AND PHOTOINHIBITOR  
Technologies are generally described for a photoresist and methods and systems effective to form a pattern in a photoresist on a substrate. In some examples, the photoresist includes a resin, a...
US20060147845 Electrically reconfigurable photolithography mask for semiconductor and micromechanical substrates  
A mask useful for photolithography that can be electronically reconfigured is described. In one embodiment, a photolithography system has an illumination system, a reticle scanning stage, a wafer...
US20090253079 FORMING REVERSE ILLUMINATION PATTERNS  
In photolithographic exposure, the illumination pattern (120R) formed on a photosensitive surface (106) is a reverse of the pattern (130) on the optical mask (124). The reverse pattern (120R) is...
US20140242522 DOUBLE-MASK PHOTOLITHOGRAPHY METHOD MINIMIZING THE IMPACT OF SUBSTRATE DEFECTS  
In the field of photolithography and, notably, photolithography in the extreme ultraviolet, a photolithography method is provided in which a first mask blank is produced that can have defects, an...
US20110171585 Photolithography Method  
A photolithography method is provided which includes: arranging a layout topography in a first mask and a second mask in such a way that at least a layout pattern of the layout topography is...
US20130260288 EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK  
A process of an extreme ultraviolet lithography (EUVL) is disclosed. The process includes receiving an extreme ultraviolet (EUV) mask with multiple states. Different states of the EUV mask are...
US20130078574 SELF-ASSEMBLABLE POLYMER AND METHOD FOR USE IN LITHOGRAPHY  
A self-assemblable polymer is disclosed, having first and second molecular configurations with the first molecular configuration has a higher Flory Huggins parameter for the self-assemblable...
US20120171600 Time Differential Reticle Inspection  
Disclosed are systems and methods for time differential reticle inspection. Contamination is detected by, for example, determining a difference between a first signature of at least a portion of a...
US20070054197 Mask and pattern forming method by using the same  
The present invention provides a mask comprising a substrate, a plurality of strip patterns and at least an assist pattern. The strip patterns are disposed on the substrate and arranged in parallel...
US20140193752 STABILIZED ACID AMPLIFIERS  
There are disclosed sulfonic acid precursor compositions, as are methods of using these compositions in, for example, photolithography. Other embodiments are also disclosed.
US20050130077 Method for positioning and transferring at least two different patterns from a supply strip  
A method wherein a supply strip (bm) is entrained at a constant speed, which speed is the same as that of the substrate in strip form (c), during transfer between strips of each pattern and...
US20130216949 WATER MARK DEFECT PREVENTION FOR IMMERSION LITHOGRAPHY  
A photoresist material having a polymer that turns soluble to a base solution in response to reaction with acid. The material includes a photo-acid generator (PAG) that decomposes to form acid in...
US20130089752 Forming a Bridging Feature Using Chromeless Phase-Shift Lithography  
An elongated, chromeless, bridging feature is formed on a photolithography mask with an etching depth that causes a nominal phase difference of more than 180 degrees to energy passing through the...
US20140199518 Facile Large Area Periodic Sub-Micron Photolithography  
Disclosed herein are articles and methods useful for the lithographic applications. The articles comprise a wrinkling structure and a photosensitive material. The articles and methods provide low...
US20090047606 Lithography meandering order  
An imprint lithography method is disclosed, which includes imprinting a plurality of patterns in an imprintable medium provided on a substrate, wherein the order in which the patterns are imprinted...
US20140295348 COMPOSITIONS AND PROCESSES FOR PHOTOLITHOGRAPHY  
Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing.
US20130017487 COMPOSITIONS AND PROCESSES FOR PHOTOLITHOGRAPHY  
Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing.
US20120264053 COMPOSITIONS AND PROCESSES FOR PHOTOLITHOGRAPHY  
Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing.
US20120225384 COMPOSITIONS AND PROCESSES FOR PHOTOLITHOGRAPHY  
Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing.
US20070099095 Applying colour elements and busbars to a display substrate  
A method of applying to a display substrate colour elements and addressing busbars in a defined alignment relative to each other includes: forming said colour elements and said busbars on a surface...
US20110229821 Method of Photochemical Hydrolysis-Polycondensation of Cross-Linkable Chromophores with Steric Hindrance, Catalysed by a Photogenerated Acid, and the Applications Thereof  
The invention relates to a process for the hydrolysis-polycondensation of a sterically hindered crosslinkable chromophore, characterized in that the hydrolysis-polycondensation is catalyzed with an...
US20110183269 Methods Of Forming Patterns, And Methods For Trimming Photoresist Features  
Some embodiments include methods of forming patterns. Photoresist features may be formed over a base, with the individual photoresist features having heights and widths. The photoresist features...
US20130065178 COMPOSITIONS AND PROCESSES FOR IMMERSION LITHOGRAPHY  
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be...
US20140087309 OLEFIN-TRIGGERED ACID AMPLIFIERS  
There are disclosed olefinic acid amplifier triggers and methods of using these compositions in, for example, photolithography.
US20080187870 METHOD FOR FORMING PHOTORESIST PATTERN, METHOD FOR MANUFACTURING DISPLAY PANEL, AND METHOD FOR MANUFACTURING DISPLAY DEVICE  
A method for forming a photoresist pattern includes forming a photoresist, and forming a photoresist pattern having a step portion by performing a light exposure process a different number of times...
US20090297956 PHOTOLITHOGRAPHY WITH OPTICAL MASKS HAVING MORE TRANSPARENT FEATURES SURROUNDED BY LESS TRANSPARENT FEATURES  
In photolithographic exposure, a feature (144) of an optical mask is projected onto a dark area (160). The light intensity inside the dark area is reduced by providing a non-printable clear cutout...
US20050175907 Photo mask including scattering bars and method of manufacturing the same  
A photo mask includes a transparent substrate, a main pattern, and scattering bars. The image of the main pattern is that which is transferred to photosensitive material by rays of exposure light...
US20080044775 Method for Aligning or Assembling Nano-Structure on Solid Surface  
The present invention relates to a method for selectively assembling and aligning nano-structures on a solid surface; and, more particularly, to a method for directly adsorbing the nano-structures...
US20120034558 PHOTOLITHOGRAPHY MATERIAL FOR IMMERSION LITHOGRAPHY PROCESSES  
A photolithography material is provided. The photolithography material is a surface modifying material. The photolithography material includes a polymer (e.g., fluorine polymer) that includes less...
US20080151207 Magneto-optical photoresist  
A method for a magneto-optical photoresist. The method includes applying a magneto-optical photoresist to a surface, and patterning the magneto-optical photoresist by using a magnetic alignment....
US20070178391 Mask having balance pattern and method of patterning photoresist using the same  
A method and mask having balance patterns for reducing and/or preventing chemical flare from occurring in a photoresist between a first mask region and a second mask region. Balance patterns formed...
US20140106264 PHOTOLITHOGRAPHY MASK, PHOTOLITHOGRAPHY MASK ARRANGEMENT, AND METHOD FOR EXPOSING A WAFER  
A photolithography mask according to an embodiment may include: a mask substrate, the mask substrate having a three-dimensional pattern located and dimensioned to at least partially receive an...
US20090263729 TEMPLATES FOR IMPRINT LITHOGRAPHY AND METHODS OF FABRICATING AND USING SUCH TEMPLATES  
A template for use in imprint lithography is disclosed. The template includes at least two ultraviolet transparent materials bonded together by an ultraviolet transparent epoxy. The ultraviolet...
US20090284721 RETICLE SYSTEM FOR MANUFACTURING INTEGRATED CIRCUIT SYSTEMS  
A reticle system that includes: providing a reticle system; and assigning two or more of an image pattern onto the reticle system to form one or more layers of an integrated circuit system by...
US20080206685 Exposure method, method for manufacturing flat panel display substrate, and exposure apparatus  
An exposure method and exposure apparatus optimal for the formation of a fine pattern of an electronic device, such as a flat panel display. The exposure method and apparatus provides a high...
US20110123925 POLYMER FOR PROTECTIVE LAYER OF RESIST, AND POLYMER COMPOSITION INCLUDING THE SAME  
A polymer includes a first repeating unit represented by the following Chemical Formula 1, and a second repeating unit including at least one repeating unit represented by the following Chemical...
US20050250052 Maskless lithography using UV absorbing nano particle  
Systems and methods are disclosed for a maskless lithography process by over coating a photo resist layer with water soluble thermoplastics; and imaging ultraviolet (UV) absorbing nano particles...