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US20150085266 DIFFERENTIAL DOSE AND FOCUS MONITOR  
A dose and focus monitor structure includes at least one complementary set of unit dose monitors and at least one complementary set of unit focus monitors. Each complementary set of unit dose...
US20060246234 Photomask assembly incorporating a metal/scavenger pellicle frame  
A photomask assembly is disclosed having a photomask substrate and a composite pellicle frame that includes both a metallic frame component and a scavenger component. The metallic frame component...
US20120171600 Time Differential Reticle Inspection  
Disclosed are systems and methods for time differential reticle inspection. Contamination is detected by, for example, determining a difference between a first signature of at least a portion of a...
US20050130077 Method for positioning and transferring at least two different patterns from a supply strip  
A method wherein a supply strip (bm) is entrained at a constant speed, which speed is the same as that of the substrate in strip form (c), during transfer between strips of each pattern and...
US20090233189 DEVICE AND METHOD FOR OBTAINING EXPOSURE CORRECTION INFORMATION, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE  
A method of obtaining exposure correction information includes adjusting intensity of light incident on a photomask so that intensity of light output from the photomask has a desired distribution,...
US20090187878 DATA GENERATION METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRON BEAM EXPOSURE SYSTEM  
A method includes: generating electron beam exposure data, used for electron beam exposure, from design data of a semiconductor device; extracting differential information indicating a difference...
US20110033787 FRAME CELL FOR SHOT LAYOUT FLEXIBILITY  
A method includes receiving an integrated circuit chip size and determining a frame structure segment size based on the chip size. The frame structure segment size is less than the chip size. An...
US20130078557 LITHOGRAPHIC CD CORRECTION BY SECOND EXPOSURE  
Correction of critical dimension variation is accomplished with a second exposure, e.g. using a second reticle. Embodiments include exposing a first wafer with a first dose using a first reticle,...
US20050164096 Monitor for variation of critical dimensions (CDs) of reticles  
The present invention provides a reticle 100 for use in a lithographic process. The reticle, in one embodiment, includes a patterned layer 110 located over a reticle substrate. The reticle 100 may...
US20070248898 TARGETS FOR ALIGNMENT OF SEMICONDUCTOR MASKS  
Alignment of mask layers in semiconductor manufacturing is carried out by using alignment lines having at least one row of diffractively reflecting or scattering features on the lines. The...
US20060263706 Overlay vernier and method for manufacturing semiconductor device using the same  
An overlay vernier comprises overlay vernier patterns having a layout identical to that of patterns disposed within a real cell. A lower overlay vernier pattern is formed within a scribe line...
US20120052422 MASK-SHIFT-AWARE RC EXTRACTION FOR DOUBLE PATTERNING DESIGN  
A method includes providing a layout of an integrated circuit design, and generating a plurality of double patterning decompositions from the layout, with each of the plurality of double...
US20080248412 SUPERVISORY ETCH CD CONTROL  
Exemplary embodiments provide a controller system and method to control etch critical dimensions (CDs) during semiconductor manufacturing processes when the etch elements cannot be manipulated to...
US20060115745 Electron beam exposure mask, electron beam exposure method, and electron beam exposure system  
An electron beam exposure system includes: an electron beam generation unit for generating an electron beam; an electron beam exposure mask having opening portions for proximity effect correction,...
US20130078558 LITHOGRAPHIC CD CORRECTION BY SECOND EXPOSURE  
Correction of CD variation is accomplished with a second exposure, e.g. using a second reticle. Embodiments include exposing a first wafer with a first dose using a first reflective reticle having...
US20110236809 METHOD FOR EXAMINING A WAFER WITH REGARD TO A CONTAMINATION LIMIT AND EUV PROJECTION EXPOSURE SYSTEM  
A method for examining at least one wafer (13) with regard to a contamination limit, in which the contamination potential of the resist (13a) of the wafer (13), which resist (13a) outgasses...
US20050089776 Resist reflow measurement key and method of forming a fine pattern of a semiconductor device using the same  
In a resist reflow measurement key, and method of fabricating a fine pattern of a semiconductor device using the same, the resist reflow measurement key includes a first reflow key including a...
US20080044739 Correction Of Resist Critical Dimension Variations In Lithography Processes  
According to one aspect, a method is provided for preparing a photoresist mask set adapted to correct for critical dimension variations resulting from topography effects in a semiconductor device....
US20070099097 Multi-purpose measurement marks for semiconductor devices, and methods, systems and computer program products for using same  
A mark for use in measuring characteristics of a layer of the semiconductor device includes multiple staggered L-shaped patterns including adjacent vertices, and legs that include line segments...
US20060019179 Method of reducing the impact of stray light during optical lithography, devices obtained thereof and masks used therewith  
A method of reducing the influence of the spread of the transmitted light on the feature size during optical lithography is disclosed. The method comprises at least two irradiation steps. During a...
US20090046263 USING PHASE DIFFERENCE OF INTERFERENCE LITHOGRAPHY FOR RESOLUTION ENHANCEMENT  
Interference lithography (IL) system and methods are disclosed according to embodiments of the invention. Two beams of coherent light with a first phase difference expose a first interference...
US20090111037 PROTECTIVE OVERCOAT TRANSFER COMPENSATION  
Observable matte-finish indicia on a printer medium having a matte finish includes the steps creating a matte image-viewing area; creating a glossy finish region within the image-viewing area;...
US20090252422 EXPOSURE METHOD AND EXPOSURE DEVICE  
An exposure method capable of performing accurate exposure without using a large photomask. The exposure method performs exposure while relatively moving a photomask above a substrate and includes...
US20060003240 Methods for adjusting light intensity for photolithography and related systems  
Correcting light intensity for photolithography may include irradiating light having a first light intensity distribution through a photo mask having a mask pattern to a photosensitive layer on a...
US20060292456 Reticle constructions, and methods for photo-processing photo-imageable material  
The invention includes methods for photo-processing photo-imageable material. Locations of the photo-imageable material where flare hot spots are expected to occur are ascertained. A substantially...
US20070281225 METHOD OF CORRECTING FOR PATTERN RUN OUT  
A method of correcting for pattern run out in a desired pattern in directional deposition or etching comprising the steps of providing a test substrate;providing a stencil of known thickness on...
US20060014082 Method of correcting mask pattern  
A mask pattern correction method able to easily eliminate a fine step difference generated after line width correction of a pattern is provided. This is made a correction method of a mask pattern...
US20060105249 Exposure mask and method of manufacturing the same  
A method of manufacturing an exposure mask, which has the steps of: obtaining the form data D1 of device exposure patterns by applying optical proximity effect correction to the form data D0 of...
US20070196742 Mask-Patterns Including Intentional Breaks  
A method for determining a mask pattern to be used on a photo-mask in a photolithographic process is described. During the method, a target pattern that includes at least one continuous feature is...
US20100099035 METHOD OF ITERATIVE COMPENSATION FOR NON-LINEAR EFFECTS IN THREE-DIMENSIONAL EXPOSURE OF RESIST  
The field of this disclosure is making three-dimensional topographic structures by means of graduated exposure in a photosensitive material, such as a photoresist, photosensitive polymide, or...
US20060019183 Imprint alignment method, system, and template  
An improved lithographic alignment method, system, and template. The method includes creating, within a lithographic subfield, subsequent-layer features which are intentionally offset from their...
US20070031743 Alignment and alignment marks  
A lithographic substrate provided with an alignment mark, the alignment mark having a plurality of features spaced apart from one another, each feature being spaced apart from adjacent features by...
US20060257765 System and method for photolithography in semiconductor manufacturing  
A method for photolithography in semiconductor manufacturing includes providing one or more masks for a wafer; defining a reference focus plane of a first mask of the one or more masks; defining a...
US20050123845 Method of adjusting deviation of critical dimension of patterns  
A method of adjusting a deviation of a critical dimension of patterns formed by a photolithography process is disclosed. The method comprises measuring the deviation of the critical dimension of...
US20060228633 Method of resolving phase conflicts in an alternating phase shift mask and the alternating phase shift mask  
A method of resolving phase conflict in an alternating phase shift mask and the alternating phase shift mask are disclosed, which are characterized by that a transparent slit region is formed on...
US20050202326 OPTIMIZED PLACEMENT OF SUB-RESOLUTION ASSIST FEATURES WITHIN TWO-DIMENSIONAL ENVIRONMENTS  
A method of creating a photomask layout for projecting an image of an integrated circuit design comprises creating a layout of spaced integrated circuit shapes to be projected via the photomask,...
US20090004581 Exposure apparatus, exposure method and optical proximity correction method  
There is disclosed an exposure apparatus which includes an illumination optical system including a light source which emits illumination light, a mask stage which holds a photomask having a mask...
US20100055580 METHOD FOR FRACTURING CIRCULAR PATTERNS AND FOR MANUFACTURING A SEMICONDUCTOR DEVICE  
A method for manufacturing a semiconductor device using a photomask and optical lithography is disclosed, wherein circular patterns on the semiconductor wafer are formed by using circular patterns...
US20080193859 DUAL METRIC OPC  
A technique for creating mask layout data to print a desired pattern of features via a photolithographic process includes defining one or more subresolution assist features (SRAFs) and performing...
US20080068695 Tracing Method And Apparatus  
A tracing method in which tracing is performed by moving a spatial optical modulation device in a predetermined scanning direction relative to a tracing surface is provided. The spatial optical...
US20070287072 MASK SUBSTRATE DEPTH ADJUSTMENT TO ADJUST FOR TOPOGRAPHY ON SURFACE  
Methods of forming and using a mask having a mask substrate including a non-planar surface are disclosed. The non-planar surface includes at least one portion having a depth configured to...
US20090199137 SYSTEM AND METHOD FOR MULTI-EXPOSURE PATTERN DECOMPOSITION  
Some embodiments provide a method and system for identifying error markers for patterns within a design layout that do not meet the manufacturing constraints. Some embodiments extend a region from...
US20130095418 OPTIMIZED MASK DESIGN FOR FABRICATING PERIODIC AND QUASI-PERIODIC PATTERNS  
A method for printing a desired periodic or quasi-periodic pattern of dot features into a photosensitive layer disposed on a substrate including the steps of designing a mask pattern having a...
US20060110693 Exposure method and apparatus, exposure mask, and device manufacturing method  
Disclosed is an exposure method and apparatus, an exposure mask and a device manufacturing method, wherein a first surface of a light blocking member having a plurality of openings formed in a...
US20060172207 Exposure analyzing system, method for analyzing exposure condition, and method for manufacturing semiconductor device  
An exposure analyzing system includes a microscope measuring CDs in resist patterns, each of the resist patterns being formed by specific defocus and dose conditions, an exposure condition...
US20080044741 Metrology systems and methods for lithography processes  
Metrology systems and methods for lithography processes are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a mask having a plurality of corner...
US20050214658 Method for alleviating tolerance restrictions for feature sizes during fabrication of photomasks  
Tolerances to be communicated to the manufacturer for a photomask fabrication process that are assigned as desired values of feature sizes to be realized on the photomask, are freed of...
US20080057410 Method of repairing a photolithographic mask  
A method is described for repairing a defect detected in a photolithographic mask. A phase voxel cavity is formed in the photolithographic mask to compensate for the defect in the...
US20110189601 METHOD OF FORMING PATTERN, SYSTEM FOR CALCULATING RESIST COATING DISTRIBUTION AND PROGRAM FOR CALCULATING THE SAME  
In one embodiment, a method of forming a resist pattern on a substrate is provided. Information of a template pattern formed on a template based on template pattern data is obtained. A resist...
US20100112467 PHOTOLITHOGRAPHY SYSTEMS AND ASSOCIATED METHODS OF OVERLAY ERROR CORRECTION  
Several embodiments of photolithography systems and associated methods of overlay error correction are disclosed herein. In one embodiment, a method for correcting overlay errors in a...

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