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US20090311460 |
SEMICONDUCTOR WAFER
A semiconductor wafer with high flatness is provided. The semiconductor wafer has a diameter φ of 450 mm and a thickness of at least 900 μm and no greater than 1,100 μm.
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US20090304975 |
EPITAXIAL SILICON WAFER AND METHOD FOR PRODUCING THE SAME
An epitaxial silicon wafer in which on growing an epitaxial film only on the front side of a large-sized wafer which is 450 mm or more in diameter, the wafer can be decreased in warpage to obtain a...
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US20090297755 |
SEMICONDUCTOR WAFER
A semiconductor wafer has a diameter of 450 mm and a thickness of at least 725 μm and no greater than 900 μm.
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US20090274860 |
CLAY FILM PRODUCT
The present invention provides a clay film and a member thereof, having low moisture permeability and gas permeability, having mechanical strength enabling use as a self-supporting film, having...
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US20090246444 |
EDGE ETCHED SILICON WAFERS
The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
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US20090220722 |
PROCESSES FOR PRODUCING MONOLITHIC POROUS CARBON DISKS FROM AROMATIC ORGANIC PRECURSORS
Disclosed are processes for producing monolithic and metal doped monolithic porous carbon disks from prepolymer organic precursors in the powder form composed of either or both polyimide and...
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US20090215366 |
Tool with Sintered Body Polishing Surface and Method of Manufacturing the Same
An efficiently processible polishing tool, particularly used for a CMP pad conditioner, capable solving problems in a fixing strength for fixing abrasive grains to a base plate and problems in...
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US20090184705 |
Magnetic Core for Current Transformer, Current Transformer, and Watt-Hour Meter
A magnetic core for a current transformer, and a current transformer and a watt hour meter used thereof, which is preferred the detection of a alternate current with a large asymmetrical waveform...
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US20090171258 |
Layered Adhesive Construct Having a Mouldable Layer as Skin Contact Surface
The invention relates to a layered adhesive construct comprising a backing layer and a first and second layer of a hydrocolloid adhesive, where the first and second layer of hydrocolloid adhesive...
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US20090122448 |
GLASS SUBSTRATE FOR MAGNETIC DISK APPARATUS
A main surface of a glass substrate for a magnetic disk is disk-shaped and has a ski jump on an outer peripheral end portion of the main surface opposing a magnetic head slider to be loaded. A rate...
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US20090117370 |
Vortex spin momentum transfer magnetoresistive device
A ferromagnetic thin-film based device that transitioned between alternative magnetic states thereof through having electrical currents established therethrough and has both a reference...
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US20090061140 |
Silicon Single Crystal Producing Method, Annealed Wafer, and Method of Producing Annealed Wafer
A method in which SSDs are reliably reduced while reducing void defects other than the SSDs on a wafer surface, which is essential for an annealed wafer, and ensuring that BMDs serving as gettering...
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US20090053453 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an...
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US20090011168 |
CIRCULAR RESIN-MOLDED PRODUCT HAVING CIRCULAR CENTER HOLE AND METHOD AND APPARATUS FOR MOLDING THE SAME
An annular molded product of the present invention is molded by means of injecting a molten resin into a mold through an injection gate and cooling and solidifying the injected molten resin. The...
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US20090004426 |
Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates
This invention generally relates to a process for suppressing oxygen precipitation in epitaxial silicon wafers having a heavily doped silicon substrate and a lightly N-doped silicon epitaxial layer...
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US20080210703 |
Wipes Being Formed Into A Non-Planar Form And Dispenses For Storing Said Wipes
The invention relates to a wipe comprising a generally flat piece of material ( 10 ) made of paper, cloth or the like, which is formed into a non-planar form having a three-dimensional shape, for...
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US20080193779 |
Dummy substrate and substrate processing method using the same
A dummy substrate is obtained by covering a silicon substrate with a resin coating. This increases the strength of the dummy substrate, prevents pieces and particles of the silicon substrate from...
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US20080182057 |
COPY-PROTECTED OPTICAL RECORDING MEDIUM, METHOD FOR DRIVING THEREOF AND METHOD FOR MANUFACTURING THEREOF
A copy-protected optical recording medium, a method for driving thereof and a method for manufacturing thereof, wherein the optical recording medium includes at least one region whose address is...
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US20080169476 |
Low 1C Screw Dislocation 3 Inch Silicon Carbide Wafer
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm 2 .
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US20080169306 |
Piston actuated vapor-dispersing device
A vapor-dispersing device comprising a moveable piston with a porous protuberance is described that operates by the repetitive movement of the piston to intermittently dip the porous member into a...
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US20080152856 |
COATED ABRASIVE DISC AND METHOD OF MAKING THE SAME
A coated abrasive disc has a backing comprising a synthetic woven fabric having a first major surface with a presize disposed thereon and a second major surface opposite the first major surface and...
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US20080124510 |
LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GAN SUBSTRATE AND PROCESS FOR MAKING THE SAME
Large area single crystal III-V nitride material having an area of at least 2 cm 2 , having a uniformly low dislocation density not exceeding 3×10 6 dislocations per cm 2 of growth surface area,...
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US20080107858 |
Polycarbonate for transparent injection-molded articles
A polycarbonate resin comprising fluorescing particles that feature a particular size distribution is disclosed. The size distribution of these particles that fluoresce upon excitation at...
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US20080067524 |
MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE
Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a...
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US20080063900 |
Optical storage medium
Various embodiments and methods relating to providing constructive interference of light between a reflective layer and an imageable layer are disclosed.
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US20080063899 |
Storage disc
Various embodiments and methods relating to a storage disc having writable layer, a reflective layer and a compressive layer are disclosed.
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US20080020168 |
SILICON ON INSULATOR STRUCTURE WITH A SINGLE CRYSTAL CZ SILICON DEVICE LAYER HAVING A REGION WHICH IS FREE OF AGGLOMERATED INTRINSIC POINT DEFECTS
The present invention relates to a silicon on insulator (“SOI”) structure in which the device layer is derived from a single crystal Cz silicon wafer which has an axially symmetric region which...
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US20080020679 |
GLASS SUBSTRATE FOR MAGNETIC DISK, ITS PRODUCTION METHOD AND MAGNETIC DISK
A method for producing a glass substrate for a magnetic disk by polishing a circular glass plate, which comprises a step of polishing the principal plane of the circular glass plate by using a...
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US20080006844 |
CRYSTALLINE COMPOSITION, WAFER, DEVICE, AND ASSOCIATED METHOD
A crystalline composition is provided that includes gallium and nitrogen. The crystalline composition may have an amount of oxygen present in a concentration of less than about 3×10 18 per cubic...
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