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US20080108175 |
Method of forming a phase change layer and method of manufacturing a storage node having the phase change layer
A method of forming a phase change layer may include providing a bivalent first precursor having germanium (Ge), a second precursor having antimony (Sb), and a third precursor having tellurium (Te)...
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US20080107812 |
PRECURSORS HAVING OPEN LIGANDS FOR RUTHENIUM CONTAINING FILMS DEPOSITION
Ruthenium containing precursors for ruthenium containing films deposition comprising a ruthenium precursor selected from the group essentially consisting of Ru(XOp)(XCp), Ru(XOp) 2 , Ru(allyl) 3 ,...
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US20080102208 |
VORTEX CHAMBER LIDS FOR ATOMIC LAYER DEPOSITION
Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing...
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US20080096386 |
METHOD OF FORMING A PHASE-CHANGEABLE LAYER AND METHOD OF MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE USING THE SAME
A phase-changeable layer and a method of forming the same are disclosed. In the method, a first hydrogen gas is introduced into a reaction chamber into which a substrate is loaded at a first flow...
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US20080087359 |
Thermal Deposition Surface Treatment Method, System and Product
A process for treating a workpiece, said process comprising the steps of: (c) altering the temperature of a workpiece surface wherein at least one condition selected from the group of: thermal...
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US20080085365 |
Alkoxide Compound, Thin Film-Forming Material And Method For Forming Thin Film
The alkoxide compound of the present invention is represented by general formula (I) below. The alkoxide compound of the present invention is an iron compound that can be delivered in a liquid...
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US20080075855 |
Methods For Depositing Metal Films On Diffusion Barrier Layers By CVD Processes
A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes:...
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US20080069954 |
METHOD AND APPARATUS FOR DISPENSE OF CHEMICAL VAPOR IN A TRACK LITHOGRAPHY TOOL
A buffer vessel and a vapor tube in a track tool are configured as a diffusion vaporizer to deliver a flow of photolithography chemical vapor to a chamber for coating a wafer. Pressure in the...
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US20080063798 |
PRECURSORS AND HARDWARE FOR CVD AND ALD
The present invention generally comprises an apparatus for depositing high k dielectric or metal gate materials in which toxic, flammable, or pyrophoric precursors may be used. Exhaust conduits may...
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US20080057218 |
METHOD AND APPARATUS TO HELP PROMOTE CONTACT OF GAS WITH VAPORIZED MATERIAL
Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element...
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US20080044573 |
RATE CONTROL PROCESS FOR A PRECURSOR DELIVERY SYSTEM
Embodiments of the invention provide a method for monitoring and controlling delivery of a precursor from an ampoule in a process chamber. In one embodiment, the method provides flowing a first...
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US20080038464 |
Methods for Coating a Substrate and Forming a Colored Film and Related Device
A method comprising the following steps: placing the substrates in an evacuated enclosures; forming a gas by evaporating a component that is liquid at atmospheric pressure and at ambient...
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US20080038463 |
ATOMIC LAYER DEPOSITION PROCESS
In one embodiment, a method for depositing a material on a substrate during an atomic layer deposition (ALD) process is provided which includes positioning the substrate on a substrate support...
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US20080026149 |
METHODS AND SYSTEMS FOR SELECTIVELY DEPOSITING SI-CONTAINING FILMS USING CHLOROPOLYSILANES
Chloropolysilanes are utilized in methods and systems for selectively depositing thin films useful for the fabrication of various devices such as microelectronic and/or microelectromechanical...
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US20080014351 |
Film forming system, method of operating the same, and storage medium for executing the method
After depositing silicon nitride films on substrates held by a wafer boat in a reaction vessel and subsequently unloading the wafer boat from the reaction vessel, during a time frame from at a...
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