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US20090304567 |
CERAMIC MATERIALS CONTAINING SPHERICAL SHAPED CARBON PARTICLES
Ceramic materials with a matrix which contains at least one carbide, at least one carbide-forming element and carbon, and which furthermore contain a dispersed phase of carbon particles with...
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US20090283761 |
METHOD OF CUTTING SINGLE CRYSTALS
A method of dividing single crystals, particularly of plates of parts thereof, is proposed, which can comprise: pre-adjusting the crystallographic cleavage plane ( 2′ ) relative to the cleavage...
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US20090263306 |
SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, WIRING SUBSTRATE, AND SILICON CARBIDE MANUFACTURING METHOD
A silicon carbide substrate has a high-frequency loss equal to or less than 2.0 dB/mm at 20 GHz is effective to mount and operate electronic components. The silicon carbide substrate is heated at...
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US20090256162 |
Method for Producing Semi-Insulating Resistivity in High Purity Silicon Carbide Crystals
A method is disclosed for producing high quality semi-insulating silicon carbide crystals in the absence of relevant amounts of deep level trapping elements. The invention includes the steps of...
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US20090220788 |
METHOD FOR SYNTHESIZING ULTRAHIGH-PURITY SILICON CARBIDE
Adsorbed gaseous species and elements in a carbon (C) powder and a graphite crucible are reduced by way of a vacuum and an elevated temperature sufficient to cause reduction. A wall and at least...
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US20090202414 |
Method of manufacturing sub-micron silicon-carbide powder and composition for manufacturing thereof
A method of manufacturing a silicon carbide powder with submicron size of powder particles wherein a homogeneous reactant mixture comprising a source of silicone, a source of carbon, and...
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US20090184327 |
METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
A method for the production of an SiC single crystal includes the steps of growing a first SiC single crystal in a first direction of growth on a first seed crystal formed of an SiC single crystal,...
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US20090169458 |
METHOD OF PRODUCING SILICON CARBIDE
A method of producing silicon carbide is provided. The method includes heating a cured product of a curable silicone composition in a non-oxidizing atmosphere at a temperature exceeding 1,500° C....
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US20090155157 |
Process for aftertreating carbon black
The invention relates to a process for aftertreating carbon black, wherein the carbon black is subjected to a carrier gas flow in a fluidized bed apparatus in the lower region of the apparatus, an...
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US20090142247 |
Chemical treatment to reduce machining-induced sub-surface damage in semiconductor processing components comprising silicon carbide
Method of removing damaged silicon carbide crystalline structure from the surface of a silicon carbide component. The method comprises at least two liquid chemical treatment processes, where one...
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US20090101625 |
Silicon carbide particles, methods of fabrication, and methods using same
Improved silicon carbide particles, improved silicon carbide abrasive particles, and abrasive slurry compositions for use chemical mechanical planarization (CMP) processes. The particles can...
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US20090078566 |
Deposited Film Forming Method, Deposited Film Forming Device, Deposited Film, and Photosensitive Member Provided with the Deposited Film
The present invention relates to a method of forming a deposited film including a first step for setting a deposited film forming target ( 10 ) into a reaction chamber ( 4 ), a second step for...
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US20090081106 |
FIRING SUPPORT FOR CERAMICS AND METHOD FOR OBTAINING SAME
The invention relates to a firing support for ceramics formed from a carbon substrate at least partially covered by a coating based on silicon carbide (SiC), said coating additionally adhering to...
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US20090062556 |
CARRIER FOR OLEFIN OXIDE CATALYST
A carrier for a catalyst useful for the epoxidation of an olefin which comprises an inert, refractory solid carrier is provided. The carrier has no or little absolute volume from small pores, of...
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US20080220232 |
Silicon Carbide Single Crystal, Silicon Carbide Single Crystal Wafer, and Method of Production of Same
The present invention provides a high resistivity, high quality, large size SiC single crystal, SiC single crystal wafer, and method of production of the same, that is, a silicon carbide single...
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US20080213155 |
Method for siliconizing carbon-containing Materials
A method for treating workpieces that consist of porous carbon material with liquid silicon with the formation of silicon carbide, comprising the steps: Preheating porous carbon workpieces under...
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US20080199388 |
Method for manufacturing a diamond composite
A method for manufacturing a diamond composite, includes: a) mixing diamonds with additives, the mixture comprising at least 50 wt % and less than 95 wt % of diamonds and more than 5 wt %...
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US20080095692 |
Method For Producing Fabricated Parts Based On Beta-Sic For Using In Aggressive Media
The invention relates to a method for producing a composite material based on β-SiC, said method comprising the following steps: (a) a precursor mixture is prepared, said mixture comprising at...
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US20080069754 |
System, Method, and Apparatus for Conversion Bonding of Precursor Subcomponents Into a Unitary Monolith
A process for converting precursor objects into a unitary ceramic object produces, for example, a ceramic, optical scan mirror that is formed from at least two pieces. An optical section has at...
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US20080067524 |
MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE
Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a...
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US20080056977 |
PRODUCTION OF ULTRAFINE METAL CARBIDE PARTICLES UTILIZING POLYMERIC FEED MATERIALS
The production of ultrafine metal carbide powders from polymeric powder and metallic precursor powder starting materials is disclosed. In certain embodiments, the polymeric powder may comprise...
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US20080050301 |
Silicon Carbide Single Crystal and Method of Etching the Same
Single-crystal silicon carbide is obtained, which finds a wide variety of applications including semiconductors, and an etching method for single-crystal silicon carbide is provided, by which...
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US20080020212 |
Seed crystal consisting of silicon carbide carbide single crystal and method for producing ingot using the same
The present invention relates to a seed crystal consisting of a silicon carbide single crystal suitable for producing a substrate (wafer) for an electric power device, a high-frequency device or...
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US20080008641 |
One Hundred Millimeter SiC Crystal Grown on Off-Axis Seed
A semiconductor crystal and associated growth method are disclosed. The crystal includes a seed portion and a growth portion on the seed portion. The seed portion and the growth portion form a...
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