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US20130194862 NON-VOLATILE FLIP-FLOP  
A flip-flop has an output control node and an isolation switch selectively couples a retention sense node to the output control node. A sense circuit selectively couples an external sense current...
US20120063244 VOLTAGE GENERATOR, NONVOLATILE MEMORY DEVICE COMPRISING VOLTAGE GENERATOR, AND METHOD OF OPERATING VOLTAGE GENERATOR  
A voltage generator comprises a first booster that generates a first high voltage, and a second booster that generates a second high voltage by boosting an external voltage. The first booster...
US20150236031 VERTICAL MEMORY CELL WITH NON-SELF-ALIGNED FLOATING DRAIN-SOURCE IMPLANT  
The present disclosure relates to a memory cell that includes a vertical selection gate, a floating gate extending above the substrate, wherein the floating gate also extends above a portion of...
US20050141256 Paper money, coin, valuable instrument, certificates, tag, label, card, packing containers, documents, respectively installed with integrated circuit  
Although a product having such the IC chip has been diffused, information on the product may be capable of being perceived, abstracted, falsified, or the like by a third person with his external...
US20140204659 CAPACITIVE COUPLED SENSE AMPLIFIER BIASED AT MAXIMUM GAIN POINT  
A sense amplifier includes a first inverter including a first input node and a first output node, the first input node coupled to a first bitline through a first capacitor, the first output node...
US20070002658 Semiconductor device including a unique identifier and error correction code  
A semiconductor device includes a plurality of laser fuses and each laser fuse represents a bit of data. A first set of the plurality of laser fuses represents a unique identifier that corresponds...
US20150117115 DISCHARGE CIRCUIT  
A discharge circuit includes a first circuit connected between a high-voltage terminal and a connection node, wherein first circuit includes a depletion high voltage NMOS transistor of which a...
US20150071015 CIRCUIT FOR REDUCING LEAKAGE CURRENT  
A method includes coupling, by using a switching circuit, a first node to a bulk node of an input/output (IO) circuit of a memory circuit when the IO circuit operates in an active mode. The first...
US20150131366 VOLTAGE CONTROLLER  
A voltage controller is provided that is connected to a voltage inducing circuit which is connected to a static random-access memory (SRAM) cell. The voltage controller comprises a voltage...
US20120075927 Magnetic Element Having Perpendicular Anisotropy With Enhanced Efficiency  
Techniques and magnetic devices associated with a magnetic element that includes a fixed layer having a fixed layer magnetization and perpendicular anisotropy, a nonmagnetic spacer layer, and a...
US20120002500 Multi-Voltage Level, Multi-Dynamic Circuit Structure Device  
A multi-voltage level, multi-dynamic circuit structure device and method are disclosed. In a particular embodiment, the method includes discharging a first dynamic node at a first discharge...
US20140286116 NOISE TOLERANT SENSE CIRCUIT  
A device and a method for a sense circuit have been disclosed. In an implementation, the sense circuit includes a sense amplifier and at least one decoupling device. The decoupling device is...
US20130279241 CIRCUITS AND METHODS FOR REDUCING MINIMUM SUPPLY FOR REGISTER FILE CELLS  
A register file employing a shared supply structure to improve the minimum supply voltage.
US20120106285 CIRCUITS AND METHODS FOR REDUCING MINIMUM SUPPLY FOR REGISTER FILE CELLS  
A register file employing a shared supply structure to improve the minimum supply voltage.
US20130088913 CIRCUIT AND METHOD OF WORD LINE SUPPRESSION  
A word line driver circuit for providing a suppressed word line voltage includes a switch configured to selectively load a word line to a suppressed word line voltage node and a word line charging...
US20100309713 MAGNETIC RANDOM ACCESS MEMORY  
An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first...
US20130077411 Dynamic Switching Approach to Reduce Area and Power Consumption of High Voltage Charge Pumps  
A charge pump system uses a dynamic switching approach, where the pump connections are independent of the load for each output. One large pump is designed to be shared between all of the outputs...
US20110242920 VOLTAGE SENSING CIRCUIT CAPABLE OF CONTROLLING A PUMP VOLTAGE STABLY GENERATED IN A LOW VOLTAGE ENVIRONMENT  
Herein, a voltage sensing circuit, which is capable of controlling a pumping voltage to be stably generated in a low voltage environment, is provided. The voltage sensing circuit includes a...
US20080080277 Method and system of analyzing failure in semiconductor integrated circuit device  
A method of analyzing a failure in a semiconductor integrated circuit device may include storing defects and analog characteristics correlated with the defects in a database, detecting a fail bit...
US20110255351 Level Shifter with Embedded Logic and Low Minimum Voltage  
In one embodiment, a level shifter circuit may include a shift stage that also embeds transistors that implement a logic operation on two or more inputs to the level shifter. At least one of the...
US20100329055 MEASURING ELECTRICAL RESISTANCE  
A circuit having a first circuit configured to receive an input voltage and generate a first voltage that generates a first current flowing through a resistive device and a second voltage that...
US20110158026 FUSE CIRCUIT AND CONTROL METHOD THEREOF  
A fuse circuit includes a plurality of fuse sets configured to perform fuse programming and generate fuse signals in response to fuse programming signals and a fuse control unit configured to...
US20150170716 Dynamic Brownout Adjustment in a Storage Device  
The various embodiments described herein include systems, methods and/or devices used to enable dynamic brownout adjustment in a storage device. In one aspect, the method includes: (1) obtaining a...
US20110007567 TEMPORARY LOCKING OF AN ELECTRONIC CIRCUIT  
A method and a circuit for protecting at least one piece of information contained in an electronic circuit by disabling at least one function of the circuit in case of detection of a number of...
US20100329009 SMART CARD CAPABLE OF SENSING LIGHT  
A smart card is foamed of a memory having light-sensing cells to sense externally supplied light and generate a detection signal in response to the externally supplied light being sensed by the...
US20120044748 Sensing Circuit For Programmable Resistive Device Using Diode as Program Selector  
A sensing circuit for programmable resistive device using diode as program selector is disclosed. The sensing circuit can have a reference and a sensing branch. In one embodiment, each branch can...
US20110235423 VERIFICATION PROCESS FOR NON-VOLATILE STORAGE  
When erasing non-volatile storage, a verification process is used between erase operations to determine whether the non-volatile storage has been successfully erased. The verification process...
US20090268508 Reverse leakage reduction and vertical height shrinking of diode with halo doping  
One embodiment of the invention provides a semiconductor diode device including a first conductivity type region, a second conductivity type region, where the second conductivity type is different...
US20140328130 INTEGRATED CIRCUIT WITH BUMP CONNECTION SCHEME  
An integrated circuit includes first and second bump pads spaced from each other with a first space, configured to receive differential signals for a normal operation, and at least one redundant...
US20140133257 BACK-UP POWER MANAGEMENT FOR EFFICIENT BATTERY USAGE  
Battery backup devices and methods of performing a backup operation using the same are provided. A battery backup device can include a partial battery power controller configured to shut off power...
US20110211388 HIGH GMR STRUCTURE WITH LOW DRIVE FIELDS  
Multi-period structures exhibiting giant magnetoresistance (GMR) are described in which the exchange coupling across the active interfaces of the structure is ferromagnetic.
US20140211559 PROGRAMMING A SPLIT GATE BIT CELL  
A method of programming a split gate memory applies voltages differently to the terminals of the selected cells and the deselected cells. For cells being programming by being coupled to a selected...
US20150029806 VOLTAGE CONTROL INTEGRATED CIRCUIT DEVICES  
Voltage control in integrated circuits include a first voltage divider coupled to receive a reference voltage and having an output providing an adjusted reference voltage; an operational amplifier...
US20060193187 Disk drive unit having reduced electrical power consumption  
A disk drive unit for a disk, e.g. for use in a mobile device, comprises a spindle (1) positioned within the disk drive unit and adapted to support the disk rotatably in an operating position. An...
US20140347933 NOR-BASED BCAM/TCAM CELL AND ARRAY WITH NAND SCALABILITY  
This invention discloses a 2T-string NOR-based CAM logic cell comprising two physical NAND cells connected in series with two horizontal WLs and one vertical BL and one vertical SL. Additionally,...
US20130250679 NAND STEP UP VOLTAGE SWITCHING METHOD  
Methods and memories having switching points for changing Vstep increments according to a level of a multilevel cell being programmed include programming at a smaller Vstep increment in narrow...
US20120140567 NAND STEP UP VOLTAGE SWITCHING METHOD  
Methods and memories having switching points for changing Vstep increments according to a level of a multilevel cell being programmed include programming at a smaller Vstep increment in narrow...
US20150168982 LEAKAGE-AWARE VOLTAGE REGULATION CIRCUIT AND METHOD  
A voltage regulation circuit and method where a pre-charge device (PCD) and a power gate device (PGD) are connected to a voltage line that supplies power to at least one additional device. The PCD...
US20110019456 SENSE AMPLIFIER WITH SHIELDING CIRCUIT  
A sense amplifier comprises a sense node, a reference node, a memory input stage circuit, a reference input stage circuit, an output stage circuit, and a shielding circuit. The memory input stage...
US20150243361 EEPROM PROGRAMMING  
A method of programming an EEPROM, including: a first mode where a writing into cells is performed under a first voltage; and a second mode where the writing is performed under a second voltage...
US20120230111 LEVEL SHIFTING CIRCUIT  
A level shifting circuit having an input and an output where the level shifting circuit is configured to receive a logical high level having a first voltage level at the input and to output a...
US20110273940 LEVEL SHIFTING CIRCUIT  
A level shifting circuit having an input and an output where the level shifting circuit is configured to receive a logical high level having a first voltage level at the input and to output a...
US20060023516 A Computerized Centralized Data Repository and process designated as primary source by multiple Primary Source Entities and accessible via electronic communications by multiple Requesting Entities to obtain Primary Source Data about Verification Subjects.  
A computerized centralized Primary Source Data Repository for storage and retrieval of Primary Source credentialing data. This invention includes a specific set of legal and administrative...
US20120224407 INTEGRATED CIRCUIT HAVING A CLOCK DESKEW CIRCUIT THAT INCLUDES AN INJECTION-LOCKED OSCILLATOR  
Methods and apparatuses featuring an injection-locked oscillator (ILO) are described. In some embodiments, an ILO can have multiple injection points and a free-running frequency that is capable of...
US20140146629 VOLTAGE BATTERY  
A circuit includes a voltage generating circuit and a voltage keeper circuit. The voltage generating circuit includes a first node. The voltage keeper circuit includes a second node and a third...
US20130223136 SRAM based on 6 transistor structure including a first inverter, a second inverter, a first pass-gate transistor, and a second pass-gate transistor  
The present invention provides a 6T SRAM including a first inverter, a second inverter, a first pass-gate transistor, and a second pass-gate transistor. The first inverter zs a first pull-up...
US20140241053 TRENCH ISOLATION IMPLANTATION  
Embodiments of the disclosure include a shallow trench isolation structure having a dielectric material with energetic species implanted to a predetermined depth of the dielectric material....
US20120079183 REDUCED CURRENT REQUIREMENTS FOR DRAM SELF-REFRESH MODES  
Embodiments of the invention describe systems, methods, and apparatuses to reduce the instantaneous power necessary to execute a DRAM device initiated self-refresh. Embodiments of the invention...
US20140029336 SYSTEMS AND METHODS OF UPDATING READ VOLTAGES  
A method includes, in a data storage device that includes a non-volatile memory, selecting an updated reference voltage as one of a reference voltage, a first alternate reference voltage and a...
US20150213886 MEMORY SYSTEM  
A memory system according to the embodiment comprises a cell array of plural cells having three or more settable physical quantity levels and operative to store a code composed of symbols...