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US20090287362 |
MONITORED BURN-IN TEST APPARATUS AND MONITORED BURN-IN TEST METHOD
A monitored burn-in test method includes: subjecting an element set, including elements, to a writing process for writing data into each of the elements, the elements requiring a refresh process;...
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US20090285006 |
Semiconductor Memory and Method for Operating a Semiconductor Memory
A semiconductor memory has a plurality of read amplifiers to which a pair each of two complementary bit lines is connected, wherein the semiconductor memory includes at least one switching element...
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US20090279373 |
AUTO-REFRESH OPERATION CONTROL CIRCUIT FOR REDUCING CURRENT CONSUMPTION OF SEMICONDUCTOR MEMORY APPARATUS
An auto-refresh operation control circuit for a semiconductor memory apparatus is activated according to a bank active signal for executing a refresh operation and terminates the refresh operation...
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US20090273970 |
MEMORY DEVICE INCLUDING A PROGRAMMABLE RESISTANCE ELEMENT
Disclosed are a phase change memory with improved retention characteristic of a phase change device, and a method for refreshing the phase change memory. The fact that a memory is a DRAM interface...
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US20090268539 |
Chip, Multi-Chip System in a Method for Performing a Refresh of a Memory Array
A chip includes a memory array and a refresh counter. The refresh counter is configured to receive refresh trigger signals. The refresh counter is configured or configurable to initiate a refresh...
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US20090268537 |
Semiconductor memory device
A semiconductor memory device of the invention comprises unit blocks into which the memory cell array is divided, rows of sense amplifiers arranged at one end and the other end of the plurality of...
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US20090257299 |
SOFTWARE REFRESHED MEMORY DEVICE AND METHOD
A software refreshed memory device comprises a plurality of memory cells that must be periodically refreshed to avoid losing data. Preferably, the memory cells can avoid losing data even though the...
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US20090257273 |
2T SRAM CELL STRUCTURE
A SRAM cell structure includes a first N type switch, a second N type switch, a first storage node, and a second storage node. The first N type switch has a control terminal connected to a word...
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US20090251985 |
SEMICONDUCTOR MEMORY APPARATUS
A first signal input circuit outputs a first control signal in response to self-refresh and active signals. A second signal input circuit outputs a second control signal in response to the...
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US20090251982 |
Low Energy Memory Component
The present invention is directed to a DRAM circuit that implements a self-refresh scheme to substantially reduce its power dissipation level during self-refresh operations. A ramped power supply...
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US20090245004 |
SEMICONDUCTOR DEVICE INCLUDING MULTI-CHIP
In order to implement a memory having a large storage capacity and a reduced data retention current, a non-volatile memory, an SRAM, a DRAM, and a control circuit are modularized into one package....
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US20090238021 |
Semiconductor memory device and operation method therefor
Disclosed herein is a semiconductor memory device, including: a memory array section wherein a memory array which requires a refresh operation is formed; an interface section configured to carry...
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US20090238020 |
INTEGRATED CIRCUIT INCLUDING MEMORY REFRESHED BASED ON TEMPERATURE
An integrated circuit includes an array of memory cells and a first circuit. The array includes word lines. Each word line is coupled to a plurality of memory cells. The first circuit is configured...
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US20090238015 |
Appartus and method for controlling refresh with current dispersion effect in semiconductor device
A refresh control apparatus is provided which is capable of dispersing a peak current at an all-bank refresh mode and reducing the characteristic difference between the banks. The refresh control...
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US20090225623 |
METHOD, DEVICE AND SYSTEM FOR REDUCING THE QUANTITY OF INTERCONNECTIONS ON A MEMORY DEVICE
Methods, devices and systems for reducing the quantity of external interconnections of a memory device are disclosed. Implementation of one such method, device and system includes inputting over an...
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US20090225620 |
SEMICONDUCTOR MEMORY APPARATUS
A semiconductor memory apparatus includes: a compensation voltage input node; a core voltage generator configured to generate a core voltage using an external power source voltage and supply the...
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US20090225617 |
SYSTEM AND METHOD FOR HIDDEN-REFRESH RATE MODIFICATION
A system and method for modifying a hidden-refresh rate for dynamic memory cells includes monitoring a control signal from a processor and performing a hidden-refresh of dynamic data at a first...
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US20090225616 |
MEMORY THAT RETAINS DATA WHEN SWITCHING PARTIAL ARRAY SELF REFRESH SETTINGS
A memory including an array of memory cells and a control circuit. The control circuit is configured to control partial array self refreshes and to switch from one partial array self refresh to...
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US20090219775 |
Semiconductor memory device
Semiconductor memory device includes a cell array including a plurality of unit cells; and a test circuit configured to perform a built-in self-stress (BISS) test for detecting a defect by...
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US20090213675 |
SEMICONDUCTOR MEMORY DEVICE
A memory includes memory cells, wherein in a first cycle of writing first logic data, sense amplifiers apply a first potential to bit lines, drivers apply a second potential to a selected word line...
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US20090201757 |
SEMICONDUCTOR DEVICE
Double refresh executing means is changed in accordance with a manner (distributed refresh or burst refresh) of a refresh command so as to suppress a drop of internal power supply that occurs upon...
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US20090201751 |
SEMICONDUCTOR DEVICE IN WHICH A MEMORY ARRAY IS REFRESHED BASED ON AN ADDRESS SIGNAL
In an SDRAM of reduced current consumption, a signal RAS for performing refresh while temporally splitting refresh becomes active N times (where N is an integer and Nε2 holds) in a single refresh...
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US20090201723 |
Single Transistor Memory Cell
A semiconductor device along with circuits including the same and methods of operating the same are described. The device comprises a memory cell including one transistor. The transistor comprises...
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US20090185440 |
ACTIVE CYCYLE CONTROL CIRCUIT FOR SEMICONDUCTOR MEMORY APPARATUS
An active cycle control circuit for a semiconductor memory apparatus is configured to precharge a word line corresponding to a read cycle, and activate a word line corresponding to a refresh...
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US20090180342 |
SEMICONDUCTOR MEMORY DEVICE AND DRIVING METHOD THEREOF
A memory including; cells, wherein a refresh operation includes a first refresh and a second refresh, in the first refresh, a first potential higher than a gate potential in a retention is applied...
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US20090175098 |
SEMICONDUCTOR MEMORY DEVICE INCLUDING FLOATING BODY TRANSISTOR MEMORY CELL ARRAY AND METHOD OF OPERATING THE SAME
A semiconductor memory device includes a memory cell array including a plurality of memory cells, where each memory cell includes a transistor with a floating body region in which majority carriers...
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US20090168571 |
DYNAMIC RANDOM ACCESS MEMORY DEVICE AND METHOD OF DETERMINING REFRESH CYCLE THEREOF
Provided are a dynamic random access memory device having reduced power consumption and a method of determining a refresh cycle of the dynamic random access memory device. The method includes:...
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US20090168520 |
3T high density NVDRAM cell
A memory circuit includes a single transistor storing both volatile and nonvolatile bit charges.
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US20090161469 |
SEMICONDUCTOR INTEGRATED CIRCUIT AND SYSTEM
The semiconductor integrated circuit comprises: a first buffer circuit that outputs a first output signal to an output terminal on receipt of a first input signal; a second buffer circuit that...
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US20090161468 |
SEMICONDUCTOR MEMORY, MEMORY SYSTEM, AND MEMORY ACCESS CONTROL METHOD
A semiconductor memory is provided, the semiconductor memory including a memory core that includes a plurality of memory cells, a refresh generation unit that generates a refresh request for...
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US20090161467 |
MEMORY DEVICE AND REFRESH METHOD THEREOF
A memory device and a refresh method are provided herein. The memory device includes a memory array having memory rows. When an array refresh strobe (ARS) signal is received, it is determined...
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US20090161466 |
EXTENDING FLASH MEMORY DATA RETENSION VIA REWRITE REFRESH
Providing for extended data retention of flash memory devices by program state rewrite is disclosed herein. By way of example, a memory cell or group of memory cells can be evaluated to determine a...
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US20090161459 |
Dynamic Random Access Memory With Low-Power Refresh
A technique to reduce refresh power in a DRAM is disclosed. In one embodiment, all of the DRAM memory cells are refreshed at a first rate and a subset of the memory cells are refreshed a second...
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US20090161457 |
Semiconductor storage device having redundancy area
A semiconductor storage device is provided with: a memory cell array which includes a normal area and a redundancy area which replaces a defective memory cell in the normal area; a normal area...
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US20090161456 |
Semiconductor memory device which delays refreshment signal for performing self-refreshment
A semiconductor memory device having two refreshment modes of auto-refreshment and partial self-refreshment imposed on memory cells includes a command decoder which detects one of the refreshment...
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US20090154279 |
REFRESH PERIOD SIGNAL GENERATOR WITH DIGITAL TEMPERATURE INFORMATION GENERATION FUNCTION
A refresh period signal generator with a digital temperature information generation function includes a temperature information generating part configured to generate temperature information by...
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US20090154278 |
MEMORY DEVICE WITH SELF-REFRESH OPERATIONS
An apparatus and method for reducing power consumption within dynamic memory devices having internal self-refresh circuitry. The circuits for generating isolator control (ISO), pre-decoded row...
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US20090154277 |
METHOD OF REDUCING CURRENT OF MEMORY IN SELF-REFRESHING MODE AND RELATED MEMORY
The present invention provides a method of reducing current of a memory in a self-refreshing mode and a related memory. The memory includes a word line driver and a controller, and the word line...
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US20090154276 |
Auto-refresh controlling apparatus
An auto-refresh control apparatus is provided which includes a counter unit for outputting counter signals in response to an external auto-refresh command signal, and a refresh command signal...
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US20090147608 |
POWER MANAGEMENT CONTROL AND CONTROLLING MEMORY REFRESH OPERATIONS
A memory device providing signals indicating when refresh operations are complete. The signals from a number of memory devices can be combined, such as by Oring, to provide a refresh complete...
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US20090147607 |
RANDOM ACCESS MEMORY AND DATA REFRESHING METHOD THEREOF
A random access memory and a data refreshing method thereof are provided. The random access memory includes a memory array having a plurality of word lines; a control logic unit which is used for...
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US20090141576 |
METHOD OF REFRESHING DATA IN A STORAGE LOCATION
An integrated device comprising a storage location, wherein data stored in the storage location is repeatedly refreshed with a first predetermined refresh rate during a first period of time. The...
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US20090141575 |
Method and Apparatus for Idle Cycle Refresh Request in Dram
Generally, methods and apparatus are provided for idle cycle refresh request in a dynamic random access memory. According to one aspect of the invention, a dynamic random access memory is refreshed...
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US20090135660 |
Apparatus, memory device and method of improving redundancy
An apparatus includes a memory device. The memory device includes a first memory cell column which includes a plurality of first memory cells, a second memory cell column including a plurality of...
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US20090109784 |
Method of accessing synchronous dynamic random access memory, memory control circuit, and memory system including the same
An access area is set within an address space of a dynamic random access memory by arranging two or more complete columns of blocks, in which blocks of memory cells are arranged within an entirety...
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US20090109783 |
Refresh controlling circuit
A refresh controlling circuit includes an MRS latch unit configured to output a mask information signal of a bank and a mask information signal of a segment by synchronizing a first address signal...
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US20090109782 |
TEMPERATURE DETECTOR IN AN INTEGRATED CIRCUIT
A temperature detector in an integrated circuit comprises a temperature-dependent voltage generator, a ring oscillator, a timer and a clock-driven recorder. The temperature-dependent voltage...
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US20090109773 |
SEMICONDUCTOR DEVICE AND REFRESH METHOD
In order to successively perform refresh operations, a semiconductor device has a plurality of regions performing a repair independently from each other, even when the repair is carried out in the...
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US20090109755 |
Neighbor block refresh for non-volatile memory
Two or more erase sectors (blocks) in a given physical sector of the array. When (after) erasing a target block, determining whether a neighbor block needs to be refreshed by checking a...
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US20090103384 |
APPARATUS AND METHOD FOR SELF-REFRESHING DYNAMIC RANDOM ACCESS MEMORY CELLS
A dynamic random access memory (DRAM) having DRAM cells coupled to wordlines and bitlines. In a self-refresh mode, the cells coupled with the even numbered rows retain main data previously stored...
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