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US20120002478 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE  
When a voltage level detector detects that a supply voltage reaches a recovery voltage level that requires a recovery operation, a signal generator generates a recovery operation instructing...
US20120002477 MEMORIES AND THEIR FORMATION  
Memories and their formation are disclosed. One such memory has first and second memory cells at a first vertical level of the memory, first and second memory cells at a second vertical level of...
US20120002470 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE  
A non-volatile semiconductor memory device according to an embodiment includes a data write portion, the data write portion includes, in a write loop, a first operation mode of sequentially...
US20110305088 HOT CARRIER PROGRAMMING IN NAND FLASH  
A memory device includes a plurality of memory cells arranged in series in the semiconductor body, such as a NAND string, having a plurality of word lines. A selected memory cell is programmed by...
US20110292732 NAND MEMORY DEVICE AND PROGRAMMING METHODS  
A NAND Flash memory device reduces circuitry noise during program operations. The memory includes bit lines that are electrically coupled together to charge share their respective voltage...
US20110292731 Three-Dimensional Non-Volatile Memory Devices Having Highly Integrated String Selection and Sense Amplifier Circuits Therein  
Nonvolatile memory devices include an electrically insulating layer on a semiconductor substrate and a NAND-type string of nonvolatile memory cells on an upper surface of the electrically...
US20110286283 3D TWO-BIT-PER-CELL NAND FLASH MEMORY  
A 3D memory device is described which includes bottom and top memory cubes having respective arrays of vertical NAND string structures. A common source plane comprising a layer of conductive...
US20110286275 Stacked Memory Devices And Method Of Manufacturing The Same  
A stacked memory device may include at least one memory unit and at least one peripheral circuit unit arranged either above or below the at least one memory unit. The at least one memory unit may...
US20110286274 NONVOLATILE MEMORY DEVICE, PROGRAMMING METHOD THEREOF AND MEMORY SYSTEM INCLUDING THE SAME  
A nonvolatile memory device preventing a program disturb, a program method thereof and a memory system including the nonvolatile memory device and the program method. The nonvolatile memory device...
US20110280076 JUNCTIONLESS TFT NAND FLASH MEMORY  
A non-volatile memory device includes at least one junctionless transistor and a storage region. The junctionless transistor includes a junctionless, heavily doped semiconductor channel having two...
US20110280075 MEMORY DEVICE AND OPERATING METHOD THEREOF  
The invention provides a memory device on a substrate. The memory device comprises semiconductor layers, common word lines, common bit lines and a common source line. The semiconductor layers are...
US20110242892 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE  
A non-volatile semiconductor memory device including: a NAND string having multiple memory cells connected in series and first and second select gate transistors disposed on the both ends; word...
US20110235421 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE  
According to one embodiment, in the case of performing an operation for increasing a threshold voltage of a first transistor or a third transistor, a control circuit is configured to apply a first...
US20110222346 NAND-TYPE FLASH MEMORY  
A NAND-type flash memory has a bit line; a source line; and a NAND string that is configured by connecting a plurality of memory cells, into which data can be electrically rewritable, in series....
US20110216592 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM  
According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell array includes blocks, each of the blocks includes NAND strings that each comprise memory cells...
US20110205800 MEMORY DEVICES HAVING STRINGS OF SERIES-COUPLED MEMORY CELLS SELECTIVELY COUPLED TO DIFFERENT BIT LINES  
Memory devices where ends of series-coupled strings of memory cells are selectively coupled to different bit lines may facilitate increased memory densities, reduced fabrication steps and faster...
US20110199829 Nonvolatile Memory Device, Programming Method Thereof And Memory System Including The Same  
Provided is a programming method of a nonvolatile memory device. The nonvolatile memory device includes a substrate and a plurality of memory cells which are stacked in the direction perpendicular...
US20110199828 NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING SAME  
A nonvolatile memory device comprises a bulk region and a plurality of memory cells connected to a source line and a plurality of wordlines. The method comprises applying a source line voltage to...
US20110176367 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND OPERATION METHOD THEREOF  
A nonvolatile semiconductor memory device according to one embodiment includes: a memory cell array; word lines; bit lines; and a control circuit configured to write multi-value data in the memory...
US20110176366 SEMICONDUCTOR STORAGE DEVICE AND READING METHOD THEREOF  
An embodiment of the invention provides a semiconductor storage device including a NAND string, a SEN node, and a capacitor. The NAND string includes plural series-connected memory cells, and one...
US20110164451 SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING PROGRAMMABLE FUSE  
A semiconductor integrated circuit comprises a plurality of fuses arranged to be spaced apart from one another by predetermined intervals, and a page buffer electrically connected to the plurality...
US20110157990 CONTROL DEVICE FOR NONVOLATILE MEMORY AND METHOD OF OPERATING CONTROL DEVICE  
A device comprises a nonvolatile memory cell array, a buffer circuit, a program control circuit, and a read control circuit. The nonvolatile memory cell array comprises a plurality of memory...
US20110157989 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR DEVICE  
A control circuit is configured to erase a selected block in the erase operation by applying a predetermined potential to the source-line and the third conductive layer to generate a current to...
US20110141814 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE  
According to one embodiment, in a nonvolatile semiconductor memory device, a data latch circuit which is connected to a sense amplifier circuit controls a data writing operation and a data reading...
US20110131444 SYSTEMS AND METHODS FOR LOW WEAR OPERATION OF SOLID STATE MEMORY  
This disclosure is related to systems and methods for low wear operation of solid state memory, such as a flash memory. In one example, a controller is coupled to a memory and adapted to...
US20110128766 Programmable Resistance Memory  
A nonvolatile integrated circuit memory includes mode control circuitry that allows it to be configured as any of a plurality of memory types.
US20110096605 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR CONTROLLING THE SAME  
A semiconductor memory device with NAND cell units arranged therein, the NAND cell unit including: a plurality of electrically rewritable and non-volatile memory cells connected in series; first...
US20110096598 NONVOLATILE SEMICONDUCTOR MEMORY HAVING PLURAL DATA STORAGE PORTIONS FOR A BIT LINE CONNECTED TO MEMORY CELLS  
Data having three values or more is stored in a memory cell in a nonvolatile manner. A data circuit has a plurality of storage circuits. One of the plurality of storage circuits is a latch...
US20110090739 INDEPENDENT WELL BIAS MANAGEMENT IN A MEMORY DEVICE  
Methods for programming a memory device, memory devices configured to perform the disclosed programming methods, and memory systems having a memory device configured to perform the disclosed...
US20110075485 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE  
A non-volatile semiconductor storage device according to one aspect of the present invention includes a plurality of sense amplifier circuit that are configured to carry out a plurality of read...
US20110063917 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE  
A nonvolatile semiconductor memory device includes a control circuit configured to control a soft program operation of setting nonvolatile memory cells to a first threshold voltage distribution...
US20110063916 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE  
At least some of the memory transistors included in a first memory string are commonly connected to first conductive layers that are connected to at least some of the memory transistors included...
US20110063915 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE  
A non-volatile semiconductor memory device includes a memory cell array having a plurality of non-volatile memory cells capable electrically rewriting data, bit lines and source lines. A driver...
US20110058423 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME  
In an embodiment, a semiconductor memory device including a cell array with NAND strings arranged therein, wherein the device has such a program mode that bit lines and cell's channels of the NAND...
US20110051518 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME  
A semiconductor memory device, in which flag data read of a flag data region is performed during data write, comprises: a nonvolatile memory cell array having an ordinary data region and the flag...
US20110044111 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF WRITING DATA IN NON-VOLATILE SEMICONDUCTOR MEMORY DEVICES  
The device has a data write mode to boost a first boost channel region that contains a non-write selected memory cell and non-selected memory cells located closer to the first selection gate...
US20110032764 SEMICONDUCTOR DEVICE AND CONTROL METHOD OF THE SAME  
The present invention provides a semiconductor memory and a control method therefor, the semiconductor device including a first current-voltage conversion circuit (16) connected to a core cell...
US20110019486 SEMICONDUCTOR MEMORY DEVICE AND PROGRAMMING METHOD THEREOF  
A programming method of a semiconductor memory device includes charging a channel of an inhibit string to a precharge voltage provided to the common source line and boosting the charged channel by...
US20110013456 SEMICONDUCTOR MEMORY DEVICE CAPABLE OF REDUCING CHIP SIZE  
According to one embodiment, a first well of the first conductivity type which is formed in a substrate. a second well of a second conductivity type which is formed in the first well. The...
US20100329012 SEMICONDUCTOR MEMORY DEVICE  
A semiconductor memory device includes first and second element regions having a rectangular bent portion and a pair of straight line portions connected to both ends of the bent portions,...
US20100329011 MEMORY SYSTEM HAVING NAND-BASED NOR AND NAND FLASHES AND SRAM INTEGRATED IN ONE CHIP FOR HYBRID DATA, CODE AND CACHE STORAGE  
A memory system includes a NAND flash memory, a NOR flash memory and a SRAM manufactured on a single chip. Both NAND and NOR memories are manufactured by the same NAND manufacturing process and...
US20100321995 MEMORY CELL THRESHOLD VOLTAGE DRIFT ESTIMATION METHODS AND APPARATUS  
Methods of operating memory devices include determining a threshold voltage drift of two or more reference memory cells of the memory device programmed to only a subset of data states of the...
US20100296339 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING PROTECTION FUNCTION FOR EACH MEMORY BLOCK  
A nonvolatile semiconductor memory device includes a memory cell array constituted by a plurality of memory blocks, an interface, a write circuit, and a read circuit. A protect flag is written in...