Match Document Document Title
US20150098274 Cell Array with a Manufacturable Select Gate for a Nonvolatile Semiconductor Memory Device  
A three-dimensional integrated circuit non-volatile memory array includes a memory array with first and second NAND memory cell string stacks having opposite orientations, where each NAND memory...
US20150098272 PROGRAMMABLE PEAK-CURRENT CONTROL IN NON-VOLATILE MEMORY DEVICES  
A method includes, in a memory device, receiving a command that specifies a peak power consumption that is not to be exceeded by the memory device. A memory of the memory device is configured in...
US20150092491 SEMICONDUCTOR MEMORY DEVICE AND ERASING METHOD  
A reliable semiconductor memory device and an erasing method for erasing data in a reliable manner are provided. The erasing method is applied to erase a semiconductor memory device having a...
US20150071001 SEMICONDUCTOR MEMORY DEVICE  
A semiconductor memory device according to an embodiment is provided with a plurality of first latch circuits that latch setting-data at different timings, a plurality of hold circuits provided...
US20150070999 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE  
According to an embodiment, a nonvolatile semiconductor memory device includes a plurality of memory cells and a control circuit. The memory cell includes a semiconductor layer, a gate insulating...
US20150070986 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE  
A nonvolatile semiconductor memory device according to an embodiment includes: a memory cell array configured having NAND strings arranged therein; a plurality of word lines; a plurality of bit...
US20150063032 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME  
This nonvolatile semiconductor memory device comprises: a word line connected to a control gate; a bit line electrically connected to one end of a NAND cell unit; a source line electrically...
US20150049551 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE  
According to an embodiment, a nonvolatile semiconductor memory device comprises a memory cell array and a control circuit. The memory cell array includes a plurality of memory cell layers that are...
US20150036434 SEMICONDUCTOR MEMORY DEVICE  
According to one embodiment, a semiconductor memory device reads data in units of page. The device includes: a memory cell array; a plurality of latch circuits; and an arithmetic operation...
US20150036430 SEMICONDUCTOR MEMORY DEVICE  
A controller controls a memory including first and second strings. The first and second strings configure first and second string groups, respectively. In each string group, a set of memory cell...
US20150029793 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE  
A nonvolatile semiconductor memory device including: a memory cell array including NAND strings; a plurality of word lines; a plurality of bit lines; a source line; and a control circuit...
US20150029792 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME  
A semiconductor memory device and a method of operating the same are provided. When threshold voltages of memory cells are boosted to use the memory cells as a selection transistor, a threshold...
US20150023102 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE  
In a writing operation, a control circuit raises the voltage of a writing-prohibited bit line among a plurality of bit lines to a first voltage, and thereafter brings the writing-prohibited bit...
US20150016190 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE  
A nonvolatile semiconductor memory device comprises multiple memory strings each including a plurality of first and second groups of serially connected memory cells, and a back gate transistor...
US20150016189 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME  
Disclosed are a semiconductor memory device and an operating method thereof. The semiconductor memory device includes a memory cell block including a plurality of memory cells, a voltage providing...
US20150009758 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME  
A semiconductor memory device and a method of operating the same are provided. The semiconductor memory device includes memory cells stacked on a substrate. The method includes applying a...
US20150009757 ARRAY ARRANGEMENT INCLUDING CARRIER SOURCE  
A source of charge carriers in thin film transistor-based memory devices is provided for a memory. The source of charge carriers can include a diode having a first and second terminal. A NAND...
US20150003164 CONTENT ADDRESSABLE MEMORY  
Content addressable memory (CAM) devices provide for high density, low cost CAM devices. CAM devices include a non-volatile memory array having a plurality of NAND memory cell strings, wherein a...
US20150003163 SEMICONDUCTOR MEMORY DEVICE AND PROGRAMMING METHOD FOR FLASH MEMORY  
A programming method for suppressing deterioration of an insulating layer in a memory cell is provided. In the programming method for a flash memory of the invention, a cell unit including...
US20140369128 SEMICONDUCTOR MEMORY DEVICE AND OPERATION METHOD THEREOF  
A semiconductor memory device includes a memory cell suitable for having a predetermined cell state based on a data stored therein, a control signal generation unit suitable for generating a...
US20140369127 SEMICONDUCTOR MEMORY DEVICE  
According to one embodiment, a semiconductor memory device includes a first string; a second string; and a controller. The first string is coupled with a first bit line and includes first memory...
US20140369126 SIMPLIFIED NONVOLATILE MEMORY CELL STRING AND NAND FLASH MEMORY ARRAY USING THE SAME  
The present invention provides a nonvolatile memory cell string and a NAND flash memory array using the same. According to the present invention, a wall type semiconductor separated into twin fins...
US20140369125 SEMICONDUCTOR DEVICE, DATA PROGRAMMING DEVICE, AND METHOD FOR IMPROVING THE RECOVERY OF BIT LINES OF UNSELECTED MEMORY CELLS FOR PROGRAMMING OPERATION  
A device comprises a non-volatile memory array, a first selection circuit selecting whether to make a first connection path between a first bit line and a first circuit node, and selecting whether...
US20140362644 DUAL-MODE MEMORY DEVICES AND METHODS FOR OPERATING SAME  
A memory structure comprises a semiconductor strip having a multi-gate channel region, the p-type terminal region adjacent a first side of the channel region and an n-type terminal region adjacent...
US20140362643 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME  
A nonvolatile semiconductor memory device according to an embodiment includes a memory cell array having a plurality of electrically rewritable memory transistors arranged therein; and a control...
US20140362641 Program And Read Operations For 3D Non-Volatile Memory Based On Memory Hole Diameter  
Techniques are provided for programming and reading memory cells in a 3D stacked non-volatile memory device by compensating for variations in a memory hole diameter. The memory hole diameter is...
US20140347934 MEMORY DEVICES HAVING SELECT GATES WITH P TYPE BODIES, MEMORY STRINGS HAVING SEPARATE SOURCE LINES AND METHODS  
Memory devices and methods of operating memory devices are shown. Configurations described include a memory cell string having an elongated n type body region and having select gates with p type...
US20140334232 3D FLASH MEMORY DEVICE HAVING DIFFERENT DUMMY WORD LINES AND DATA STORAGE DEVICES INCLUDING SAME  
A three-dimensional (3D) flash memory includes a first dummy word line disposed between a ground select line and a lowermost main word line, and a second dummy word line of different word line...
US20140313833 MEMORY DEVICES WITH A CONNECTING REGION HAVING A BAND GAP LOWER THAN A BAND GAP OF A BODY REGION  
Memory devices are shown that include a body region and a connecting region that is formed from a semiconductor with a lower band gap than the body region. Connecting region configurations can...
US20140313832 ENHANCED DATA STORAGE IN 3-D MEMORY USING STRING-SPECIFIC SOURCE-SIDE BIASING  
A method includes storing data in a memory, which includes multiple strings of analog memory cells arranged in a three-dimensional (3-D) configuration having a first dimension associated with bit...
US20140293700 SEMICONDUCTOR MEMORY DEVICE  
According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a memory cell array including a plurality of stacked memory cells, a plurality of first wirings...
US20140269084 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE  
When performing a data erase operation, the control circuit generates positive holes at least at any one of the drain side select transistor and the source side select transistor, and supply the...
US20140269075 2T AND FLASH MEMORY ARRAY  
Flash memory arrays are described. In one embodiment, a flash memory array includes memory sectors of Two-Transistor (2T) AND memory cells. Within each of the memory sectors, a row of sector...
US20140269065 NAND Flash Memory  
Serial NAND flash memory may be provided with the characteristics of continuous read of the memory across page boundaries and from logically contiguous memory locations without wait intervals,...
US20140254276 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE  
According to one embodiment, a nonvolatile semiconductor memory device comprises memory cells each which stores data with two or more levels. Each of the memory cells includes a semiconductor...
US20140254275 SEMICONDUCTOR MEMORY DEVICE  
According to one embodiment, a memory cell, a word line, and a peripheral circuit are provided. In the memory cell, a ferroelectric film is provided for a gate insulating film. The word line is...
US20140254274 SEMICONDUCTOR MEMORY DEVICE  
According to one embodiment, a semiconductor memory device includes a memory cell and a control circuit. The memory cell is such that a ferroelectric film is provided as a gate dielectric film....
US20140247664 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE  
A memory cell array includes a plurality of memory strings divided into a plurality of sub-blocks, each memory string including a plurality of memory cells which are connected to word lines and...
US20140241063 SEMICONDUCTOR MEMORY DEVICE  
A semiconductor memory device comprises a memory string including first and second selection transistors, and first and second groups of memory cell transistors connected in series between the...
US20140241059 METHOD AND DEVICE FOR STORING AND READING RELIABLE INFORMATION IN A NAND ARRAY  
A method (and device) includes producing first data in a page region of a memory, the first data including a first number of memory sets, each of the memory sets having a second number of bits,...
US20140241057 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE  
A nonvolatile semiconductor memory device according to an embodiment includes a memory cell array having a plurality of memory cell transistors connected in series therein; a plurality of bit...
US20140233316 MEMORY SYSTEM AND PROGRAMMING METHOD THEREOF  
A program method of a nonvolatile memory device is provided, which includes programming a memory cell in one string selected from a plurality of vertical strings; determining whether a mode of...
US20140226407 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE  
An erase verify operation is executed divided into at least a first erase verify operation and a second erase verify operation. The first erase verify operation is an operation that applies a...
US20140226402 Fast-Reading NAND Flash Memory  
In a flash memory two or more pages in a plane are read in rapid succession by maintaining global word line voltages throughout multiple page reads, and by simultaneously transitioning the old...
US20140204675 MULTI-PAGE PROGRAM METHOD, NON-VOLATILE MEMORY DEVICE USING THE SAME, AND DATA STORAGE SYSTEM INCLUDING THE SAME  
A method of programming a non-volatile memory device including a plurality of strings arranged in rows and columns comprises activating all or a part of selection lines in one column at the same...
US20140192596 NONVOLATILE MEMORY WITH SPLIT SUBSTRATE SELECT GATES AND HEIRARCHICAL BITLINE CONFIGURATION  
Generally, the present disclosure provides a non-volatile memory device having a hierarchical bitline structure for preventing erase voltages applied to one group of memory cells of the memory...
US20140185383 SEMICONDUCTOR MEMORY DEVICE  
According to one embodiment, a semiconductor memory device includes a first NAND string and a second NAND string are connected to a bit line. One of the first and second NAND strings is selected...
US20140177339 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM HAVING THE SAME  
A nonvolatile semiconductor memory device includes a first string including a first number of memory cells connected in series each storing therein information in a nonvolatile manner; and a...
US20140169097 SEMICONDUCTOR MEMORY DEVICE, SYSTEM HAVING THE SAME AND PROGRAM METHOD THEREOF  
The present invention relates to a semiconductor memory device and a program method thereof. The program method according to an embodiment of the present invention includes: precharging a...
US20140169096 SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF  
A semiconductor memory device includes: a memory array including a plurality of memory cells; and a peripheral circuit configured to change a voltage level of a bit line connected to a program...