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US20070121254 Protective and conductive layer for giant magnetoresistance  
Giant magnetoresistance structures exhibiting a giant magnetoresistive effect are provided, and apparatuses incorporating said structures. The structures incorporate a giant magnetoresistive...
US20070223149 NANOCONTACTS HAVING IMPROVED CONTACT SHAPE  
A nanocontact between contact wires is provided. The contact plane of the first nanocontact wire has a quadrant shape. The contact plane of the second nanocontact wire contacting the first...
US20090257153 Binary output reader structure (BORS) with high utilization rate  
We disclose a magnetic read head, and method for making it, that operates in a binary rather than an analog mode. This greatly boosts signal amplitude for high area density recording as device...
US20070242394 MAGNETORESISTIVE (MR) ELEMENT HAVING A CONTINUOUS FLUX GUIDE DEFINED BY THE FREE LAYER  
Magnetoresistive (MR) elements having flux guides defined by the free layer are disclosed. The MR element includes a free layer, a spacer/barrier layer, a pinned layer, and a pinning layer. A back...
US20070279809 Magneto-resistance effect element, thin-film magnetic head, and method for manufacturing magneto-resistance effect element  
A magneto-resistance effect element comprises a stacked body which comprises a pinned layer having a fixed magnetization direction, a free layer having a magnetization direction that varies...
US20050259365 Magnetoresistive sensor with a specular scattering layer formed by deposition from an oxide target  
A magnetoresistive stack having a plurality of layers, characterized by an oxide specular scattering layer formed by deposition from an oxide target. The specular scattering layer is preferably...
US20130088797 CPP Device with Improved Current Confining Structure and Process  
Plasma nitridation, in place of plasma oxidation, is used for the formation of a CCP layer. Al, Mg, Hf, etc. all form insulating nitrides under these conditions. Maintaining the structure at a...
US20070097559 Magnetoresistive device having specular sidewall layers  
A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer is positioned between the specular layer and the sidewall.
US20060002036 Magnetoresistance effect film and magnetoresistance effect head  
The magnetoresistance effect film of the present invention is more reliable than conventional magnetoresistance effect films. The magnetoresistance effect film has a layered structure, in which a...
US20050270702 Magnetoresistance effect element  
The magnetoresistance effect element can be manufactured by a conventional process and is capable of restricting influences of noises or leaked magnetic signals so that magnetic recording density...
US20060132986 Magnetoresistance device and method of fabrication using titanium nitride as capping layer  
A magnetoresistance device using TiN as a capping layer and a method of fabricating the same. The fabrication of the magnetoresistance device may be simpler and the magentoresistance device may be...
US20090207533 CPP-TYPE MAGNETO RESISTANCE ELEMENT HAVING A PAIR OF FREE LAYERS AND SPACER LAYER SANDWICHED THEREBETWEEN  
A magnetic field detecting element includes: first and second free layers whose magnetization directions change in accordance with an external magnetic field; a spacer layer that is sandwiched...
US20090002898 CPP-TMR SENSOR WITH NON-ORTHOGONAL FREE AND REFERENCE LAYER MAGNETIZATION ORIENTATION  
A TMR sensor structure having free and reference layers, where the magnetic orientations of the free and reference layers are non-orthogonal. In one embodiment, a ferromagnetic free layer film has...
US20080259507 Tunneling Magnetoresistive (TMR) Sensor with A Co-Fe-B Free Layer Having A Negative Saturation Magnetostriction  
A tunneling magnetoresistive (TMR) sensor with a free layer made of a Co—Fe—B alloy is disclosed. After annealing at a temperature of less than 300° C., the Co—Fe—B free layer exhibits a negative...
US20090244790 MAGNETORESISTIVE ELEMENT AND LAYERED OBJECT  
An magnetoresistive element includes: an underlayer made of a nitride; a pinning layer made of an antiferromagnetic layer overlaid on the underlayer, the pinning layer having the close-packed...
US20100033880 MULTI-BIT STRAM MEMORY CELLS  
A multi-bit spin torque magnetic element that has a ferromagnetic pinned layer having a pinned magnetization orientation, a non-magnetic layer, and a ferromagnetic free layer having a...
US20080198514 Magnetoresistive device, magnetic head, magnetic storage apparatus, and magnetic memory  
A CPP-type magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, and a non-magnetic layer provided between the magnetization pinned layer and the magnetization...
US20110085258 Magneto-resistive devices, information storage devices including the same and methods of operating information storage devices  
An information storage device includes a magnetic track and a magnetic domain wall moving unit. The magnetic track has a plurality of magnetic domains and a magnetic domain wall between each pair...
US20070035889 Spin valve magnetoresistive sensor in current perpendicular to plane scheme  
A magnetoresistive read head includes a spin valve having at least one free layer spaced apart from at least one pinned layer by a spacer. The pinned layer is highly resistive and includes a...
US20070121255 Magneto-resistance effect element having Heusler alloy compounds adjacent to spacer layer  
A magneto-resistance effect element according to the present invention comprises a pinned layer whose magnetization direction is fixed; a free layer whose magnetization direction varies in...
US20080212241 DAMPING CONTROL IN MAGNETIC NANO-ELEMENTS USING ULTRATHIN DAMPING LAYER  
A write head and a method for forming the write head. The method includes providing a first pole and a second pole for the write head. The first pole and the second pole are formed from a...
US20100079919 SPIN-TORQUE OSCILLATOR, A MAGNETIC SENSOR AND A MAGNETIC RECORDING SYSTEM  
In a spin-torque oscillator, a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer are stacked. A pair of electrodes perpendicularly applies a current onto each plane...
US20090154032 MAGNETORESISTIVE SENSOR WITH NITROGENATED HARD BIAS LAYER FOR IMPROVED COERCIVITY  
A magnetoresistive sensor having a hard bias structure that provides improved bias field robustness. The sensor includes a nitrogenated hard bias layer and a seed layer that include a nitrogenated...
US20080055791 Current perpendicular to plane magnetoresistive head  
Embodiments of the present invention aim suppress the generation of spin torque noise in a current perpendicular to plane magnetoresistive head. According to one embodiment, when sensing current...
US20060215330 Magnetic sensing element containing quaternary Heusler alloy Co2Mn (Ge1-xSnx) which constitutes a free magnetic layer or pinned magnetic layer  
A magnetic sensing element is described, including a multilayer film including a pinned magnetic layer, a free magnetic layer disposed on the pinned magnetic layer with a nonmagnetic layer...
US20080239588 Magneto-resistance effect element, magnetic head, and magnetic recording/reproducing device  
A magneto-resistance effect element includes a magneto-resistance effect film comprised of a free magnetization layer, a fixed magnetization layer and an intermediate layer disposed between the...
US20120134057 Magnetic Element with Improved Stability  
A magnetic element capable of detecting changes in magnetic states, such as for use as a read sensor in a data transducing head or as a solid-state non-volatile memory element. In accordance with...
US20080074803 Magnetic head of magnetoresistance effect type with high resistance to external stress  
Embodiments of the present invention prevent a pinned layer from suffering magnetization reversal by external stress in a magnetic head of magnetoresistance effect type which has a synthetic...
US20070285848 Magnetoresistance device  
A magnetoresistance device includes an elongate channel formed of silicon. A conductor comprising titanium silicide is connected to the channel along one side of the channel and leads are...
US20070127166 MAGNETIC DETECTING DEVICE HAVING TWO-LAYERED SEED  
A magnetic detecting device is disclosed having a fixed magnetic layer, a free magnetic layer, and a nonmagnetic material layer between the fixed magnetic layer and the free magnetic layer. A...
US20070159733 Magnetoresistive effect element and manufacturing method thereof, and magnetic head, magnetic reproducing apparatus, and magnetic memory using the same  
A magnetoresistive effect element includes a magnetoresistive effect film including a magnetization pinned layer, a magnetization free layer, and an intermediate layer interposed therebetween and...
US20070165336 MAGNETIC DETECTING DEVICE HAVING LAMINATED SEED LAYER  
A magnetic detecting device is provided. The magnetic detecting device includes a magnetoresistive effect part having a fixed magnetic layer, and a free magnetic layer which faces the fixed...
US20070279810 Current-perpendicular-to-plane magnetic head and magnetic disk apparatus using the same  
According to one embodiment, a current-perpendicular-to-plane magnetic head includes a magnetoresistive film including a pinned layer, an intermediate layer and a free layer, a pair of magnetic...
US20100328822 METHOD AND SYSTEM FOR PROVIDING A BARRIER FOR A MAGNETORESISTIVE STRUCTURE UTILIZING HEATING  
A method and system for providing a magnetic recording transducer is described. The method and system include providing a pinned layer for a magnetic element. In one aspect, a portion of a...
US20090244789 METHOD AND SYSTEM FOR PROVIDING A HARD BIAS CAPPING LAYER  
The method and system for providing a magnetoresistive device are disclosed. The magnetoresistive device is formed from a plurality of magnetoresistive layer. The method and system include...
US20090080122 CURRENT PERPENDICULAR TO PLANE GMR AND TMR SENSORS WITH IMPROVED MAGNETIC PROPERTIES USING Ru/Si SEED LAYERS  
A magnetoresisive sensor having a thin seed layer that provides an exceptionally smooth interface between layers of the sensor stack. The exceptionally smooth interface provided by the seed layer...
US20050231854 Magnetoresistance effect film and method of manufacturing the same  
The magnetoresistance effect film is capable of shortening time of ion mill treatment and improving resolution of a read-element. The magnetoresistance effect film includes a protection layer,...
US20070253118 TUNNEL MAGNETIC RESISTANCE DEVICE, AND MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY USING THE SAME  
Provided is a high-speed, super-low-power-consumption nonvolatile memory with a high thermal stability. A nonvolatile magnetic memory is equipped with high-output tunnel magnetic resistance...
US20070230067 MAGNETORESISTANCE EFFECT DEVICE, MAGNETIC HEAD, MAGNETIC RECORDING SYSTEM, AND MAGNETIC RANDOM ACCESS MEMORY  
A CPP type magnetoresistance effect device having a synthetic ferri-pinned spin valve structure including a buffer layer, pinned ferromagnetic layer, nonmagnetic metal intermediate layer, and free...
US20070127165 MAGNETORESISTIVE EFFECT ELEMENT, THIN-FILM MAGNETIC HEAD WITH THE ELEMENT AND MANUFACTURING METHOD OF THE HEAD  
An MR effect element that can obtain the sufficient back flux-guide effect under the condition of reducing the capacitance between the upper and lower electrode layers is provided. The element...
US20060285258 MAGNETIC SENSING ELEMENT INCLUDING FREE LAYER CONTAINING HALF-METAL  
A magnetic sensing element includes a multilayer film including a pinned magnetic layer in which the magnetization direction is pinned in one direction, a free magnetic layer, and a nonmagnetic...
US20080204942 MAGNETIC THIN FILM HAVING SPACER LAYER THAT CONTAINS CuZn  
A magnetic thin film has a pinned layer whose magnetization direction is fixed with respect to an external magnetic field, a free layer whose magnetization direction is changed according to the...
US20080239587 Magneto-resistance effect element, magnetic head, magnetic recording device and magnetic memory  
A magneto-resistance effect element includes: a first magnetic layer of which a first magnetization is fixed in one direction; a second magnetic layer of which a second magnetization is fixed in...
US20080062557 Magnetoresistive element having free layer, pinned layer, and spacer layer disposed therebetween, the spacer layer including semiconductor layer  
An MR element includes: a free layer having a direction of magnetization that changes in response to a signal magnetic field; a pinned layer having a fixed direction of magnetization; and a spacer...
US20070019337 Magnetic elements having improved switching characteristics and magnetic memory devices using the magnetic elements  
A method and system for providing a magnetic element and a memory using the magnetic element are described. The method and system include providing a pinned layer, providing a spacer layer, and...
US20090180218 Information storage devices using magnetic domain wall movement and methods of operating the same  
An information storage device includes a magnetic layer configured to store information, a first and second conductive layer. The first conductive layer contacts a first end of the magnetic layer....
US20090040661 TUNNELING MAGNETIC SENSING ELEMENT AND METHOD FOR MAKING THE SAME  
An insulating barrier layer including a lower insulating layer composed of Al—O and an upper insulating layer composed of CoFe—O and disposed on the lower insulating layer is formed on a second...
US20090097168 MAGNETIC THIN FILM, AND MAGNETORESISTANCE EFFECT DEVICE AND MAGNETIC DEVICE USING THE SAME  
A magnetic thin film being ferromagnetic and exhibiting large spin polarization at room temperature is provided that comprises a substrate (2) and a CO2Fe(Si1-xAlx) thin film (3) formed on the...
US20080204943 Magnetoresistive element, magnetic memory, magnetic head, and magnetic recording/reproducing device  
A magnetoresistive element includes: a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is...
US20080088983 DAMPING CONTROL IN MAGNETIC NANO-ELEMENTS USING ULTRATHIN DAMPING LAYER  
A layer system, a method for forming the layer system, and devices utilizing the layer system are provided. In one embodiment, the method includes providing a bilayer system comprised of a first...

Matches 1 - 50 out of 55 1 2 >