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US20120188008 CIRCUIT WITH STACKED STRUCTURE AND USE THEREOF  
A circuit has a stacked structure having at least one symmetric FET at a bottom of the stack. More particularly, the circuit has a stacked structure which includes an asymmetric FET and a...
US20110121862 CIRCUIT WITH STACKED STRUCTURE AND USE THEREOF  
An NAND circuit has a stacked structure having at least one symmetric NFET at a bottom of the stack. More particularly, the circuit has a stacked structure which includes an asymmetric FET and a...
US20140266419 VOLTAGE CONTROLLER FOR RADIO-FREQUENCY SWITCH  
One or more systems and techniques for limiting a voltage potential between an antenna and a radio-frequency switch circuit are provided. A voltage controller comprises a voltage generator, a...
US20110057724 High- and Low-Power Power Supply with Standby Power Saving Features  
A power supply for providing power to an electrical device is described. The power supply converts a received input signal to a first electrical having a first voltage level at a first power...
US20130069716 TUNABLE VOLTAGE-CONTROLLED PSEUDO-RESISTOR  
A tunable voltage-controlled pseudo-resistor structure, comprising: a symmetric PMOS transistor circuit and an auto-tuning circuit connected in series. Input of the auto-tuning circuit is...
US20110227640 POWER SUPPLY DEVICE  
In a power supplying system that includes a plurality of power supply devices, each of which has a backflow prevention circuit at an output side thereof, and supplies power to a load device, a...
US20130043957 LOW DISTORTION IMPEDANCE SELECTION AND TUNABLE IMPEDANCE CIRCUITS  
A tunable impedance circuit can include a fixed impedance and one or more impedance selection circuits. Each impedance selection circuit can include a first impedance connected to a first...
US20120105146 REGULATOR CIRCUIT  
A first transistor coupled between a power supply line and an inductor, a second transistor coupled between a source of the first transistor and a reference voltage line, and a third transistor...
US20110140785 CMOS AMPLIFIER WITH INTEGRATED TUNABLE BAND-PASS FUNCTION  
A CMOS amplifier with integrated tunable band-pass function, a tunable active resistor structure, a method of amplifying an input signal and a method of fabricating an amplifier. The tunable...
US20080258807 Basic semiconductor electronic circuit with reduced sensitivity to process variations  
A basic electronic circuit generates a magnitude. The circuit has certain structural characteristics and the magnitude undergoes variations in function of the structural characteristics of the...
US20110309889 Variable-capacitance device  
A variable-capacitance device includes a first capacitance element coupled between a first power supply terminal and an output terminal, a capacitance selection switch that is turned on and off in...
US20120250200 OVER-TEMPERATURE PROTECTED TRIAC AND PROTECTION METHOD  
A triac circuit comprises a triac having first and second main terminals (MT1,MT2) and a gate terminal and a thyristor connected between one of the main terminals (MT1,MT2) and a control terminal...
US20110204969 GATED-VARACTORS  
Various embodiments of the invention provide a varactor structure that, depends on configurations, can provide a C-V characteristic based on one or a combination of a reverse bias junction...
US20130033322 CIRCUIT UNIT, BIAS CIRCUIT WITH CIRCUIT UNIT AND DIFFERENTIAL AMPLIFIER CIRCUIT WITH FIRST AND SECOND CIRCUIT UNIT  
Circuit unit (CU) comprising a heterojunction bipolar transistor and a long-gate pseudomorphic high-electron-mobility transistor. Either a source (S) or a drain (D) of the long-gate pseudomorphic...
US20100308906 Impedance Transformation With Transistor Circuits  
The present disclosure relates to impedance transformation with transistor circuits.
US20130043941 CURRENT-SENSING CIRCUIT  
In one embodiment, a circuit is provided. The circuit includes a low-ohmic circuit and a a power supply node configured and arranged for providing a supply voltage across the low-ohmic circuit to...
US20140022662 REFERENCE CIRCUIT WITH CURVATURE CORRECTION USING ADDITIONAL COMPLEMENTARY TO TEMPERATURE COMPONENT  
A reference circuit comprises a first proportional to temperature component providing a first quantity exhibiting a first type of variation as a function of temperature, a first complementary to...
US20120212289 EMS TUNABLE TRANSISTOR  
A field effect transistor comprises an electrostatically moveable gate electrode. The moveable gate is supported by at least two posts, and the source, drain, and channel of the transistor are...
US20110279181 Common-mode feedback circuit  
A common-mode feedback circuit includes an amplifying circuit, a biasing circuit connected with the amplifying circuit, and a feedback loop connecting the amplifying circuit with the biasing...
US20090128220 ISOLATION CIRCUIT  
An isolation circuit is provided. The isolation circuit is coupled between a master circuit and a slave circuit for isolating or conducting an inter integrated circuit (I2C) signal. While the...
US20140320204 ADJUSTABLE MOS RESISTOR  
A variety of circuits, methods and devices are implemented for providing an adjustable resistance. According to one such implementation an adjustable resistive device includes a metal-oxide...
US20140354351 CHOPPING CIRCUIT FOR MULTIPLE OUTPUT CURRENTS  
A circuit for reducing flicker noise includes a first current source coupled to an input current. The circuit includes current minors to generate output currents in response to the input current....
US20100271133 Electronic Circuits including a MOSFET and a Dual-Gate JFET  
Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode...
US20130033310 CARBON NANOTUBE CROSSBAR BASED NANO-ARCHITECTURE  
Carbon nanotubes (CNTs) and carbon nanotube field effect transistors (CNFETs) have demonstrated extraordinary properties and are widely accepted as the building blocks of next generation VLSI...
US20110063024 METHOD AND SYSTEM FOR BANDWIDTH ENHANCEMENT USING HYBRID INDUCTORS  
A method and system for bandwidth enhancement using hybrid inductors are disclosed and may include providing an electrical impedance that increases with frequency via hybrid inductors comprising a...
US20130043934 Analog floating gate charge loss compensation circuitry and method  
An analog floating gate circuit (10-3, 10-4) includes a first sense transistor (21, 3), a first storage capacitor (20, 5), and first (24, 4) and second (31A, 42) tunneling regions. Various...
US20100301930 REDUCING DEVICE PARASITICS IN SWITCHED CIRCUITS  
A system and method are provided to reduce the influence of parasitic capacitance at the drain and source of MOS transistors of a sampling circuit. In one embodiment, the bulk is left floating...
US20110018625 ELECTRONIC CIRCUIT AND ELECTRONIC CIRCUIT ARRANGEMENT  
In accordance with one exemplary embodiment, an electronic circuit is provided, wherein the electronic circuit comprises a first transistor and also a second transistor coupled in series with the...
US20120223770 RESETTABLE HIGH-VOLTAGE CAPABLE HIGH IMPEDANCE BIASING NETWORK FOR CAPACITIVE SENSORS  
A high-voltage MEMS biasing network. The network has a reset mode wherein a capacitive sensor is charged, and a functional mode wherein the MEMS biasing network provides a high impedance between...
US20130009700 Power Converter Circuit with AC Output  
A power converter circuit includes output terminals, and a plurality of converter units each comprising input terminals configured to be coupled to a DC power source, and output terminals for...
US20110304389 Drive Circuit With a Transmission Circuit for Capacitively Transmitting a Signal and Associated Method  
A drive circuit with a circuit for transmitting a signal from a primary side having a first ground to a secondary side having a second ground. The transformer has capacitive coupling between the...
US20080001658 Four-gate transistor analog multiplier circuit  
A differential output analog multiplier circuit utilizing four G4-FETs, each source connected to a current source. The four G4-FETs may be grouped into two pairs of two G4-FETs each, where one...
US20090257269 Low-Complexity Electronic Circuits and Methods of Forming the Same  
An electronic circuit such as a latch or a sequencer includes a plurality of transistors, all of the transistors being either NMOS transistors or PMOS transistors, and dissipates less than or...
US20100134087 LOW NOISE REFERENCE CIRCUIT OF IMPROVING FREQUENCY VARIATION OF RING OSCILLATOR  
A low noise reference voltage circuit without using an amplifier inside is capable of transforming a current IPTAT in positive proportion to absolute temperature into a voltage VPTAT in positive...
US20100073082 RECTIFIER  
Provided is a highly efficient rectifier which can readily replace a two-terminal diode and whose conduction loss is reduced from that of the two-terminal diode. Connected between the source and...
US20120086506 APPARATUS FOR COMPENSATING FOR PROCESS VARIATION OF RESISTOR IN ELECTRONIC CIRCUIT  
An electronic circuit apparatus for compensating for a process variation of a resistor in an electronic circuit is provided. The electronic circuit includes a detecting part for generating a tune...
US20100244947 METHOD OF FORMING A SENSING CIRCUIT AND STRUCTURE THEREFOR  
In one embodiment, a sensing circuit includes a sense transistor and a compensation circuit to improve the accuracy of a sensing signal formed by the sensing circuit.
US20090189678 HIGH TEMPERATURE OPERATING PACKAGE AND CIRCUIT DESIGN  
The invention provides a semiconductor device that is thermally isolated from the printed circuit board such that the device operates at a higher temperature and radiates heat away from the...
US20100244941 COMPENSATION METHOD AND CIRCUIT  
A circuit and method for compensating for parasitic elements of a transistor. A transistor, a controller, and a compensation element are mounted to a printed circuit board. The transistor includes...
US20120133428 DIELECTRICS CONTAINING AT LEAST ONE OF A REFRACTORY METAL OR A NON-REFRACTORY METAL  
Electronic apparatus and methods of forming the electronic apparatus may include one or more insulator layers having a refractory metal and a non-refractory metal for use in a variety of...
US20100277233 Gallium nitride traveling wave structures  
A traveling wave device employs an active Gallium Nitride FET. The Gallium Nitride FET has a plurality of gate feeding fingers connecting to an input gate transmission line. The FET has a drain...
US20100219886 Broadband low noise amplifier  
Aspects provide for the broadband amplification of RF signals. Other aspects provide for the conversion of single ended input to differential output. Various aspects provide for tuning the...
US20100219885 Broadband low noise amplifier  
Aspects provide for the broadband amplification of RF signals. Other aspects provide for the conversion of single ended input to differential output. Various aspects provide for tuning the...
US20090115505 SEMICONDUCTOR DEVICE WITH CONTROLLABLE DECOUPLING CAPACITOR  
Semiconductor device with a controllable decoupling capacitor includes a decoupling capacitor connected between a power voltage terminal and a ground terminal and a switching unit configured to...
US20120286888 Switched Capacitor Array for Voltage Controlled Oscillator  
A system comprises a voltage controlled oscillator comprising an inductor and a variable capacitor and a switched capacitor array connected in parallel with the variable capacitor. The switched...
US20110298534 INTEGRATED CIRCUIT DEVICE  
The channel number detecting circuit 50 detects the operation channel number Nch based on the the output terminal voltage Vpgm after falling down when the output terminal voltage Vpgm falls down...
US20100201439 III-Nitride Devices and Circuits  
A III-nitride based high electron mobility transistor is described that has a gate-connected grounded field plate. The gate-connected grounded field plate device can minimize the Miller...
US20080297258 Variable impedance circuit; and variable impedance system, filter circuit, amplifier, and communication system using the same  
A first transistor includes: a first terminal that receives one of differential input signals; a second terminal that receives a control signal for varying an impedance; a third terminal connected...
US20130082769 DIFFERENTIAL PVT/TIMING-SKEW-TOLERANT SELF-CORRECTING CIRCUITS  
Systems and methods for circuits that self-correct errors due to variations in fabrication processes, voltages, and temperature (PVT), as well as input timing errors. In an exemplary embodiment, a...
US20100330398 Semiconductor device, battery protection circuit and battery pack  
A bidirectional Trench Lateral Power MOSFET (TLPM) can achieve a high breakdown voltage and a low on-resistance. A plurality of straight-shaped islands having circular portions at both ends are...

Matches 1 - 50 out of 100 1 2 >