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US20090283738 Phase-change memory using single element semimetallic layer  
Provided is a phase-change memory using a single-element semimetallic thin film. The device includes a storage node having a phase-change material layer and a switching element connected to the...
US20090283735 CARBON NANO-FILM REVERSIBLE RESISTANCE-SWITCHABLE ELEMENTS AND METHODS OF FORMING THE SAME  
Methods of forming a microelectronic structure are provided, the microelectronic structure including a first conductor, a discontinuous film of metal nanoparticles disposed on a surface above the...
US20090279343 OPERATING METHOD OF ELECTRICAL PULSE VOLTAGE FOR RRAM APPLICATION  
Metal-oxide based memory devices and methods for operating and manufacturing such devices are described herein. A method for manufacturing a memory device as described herein comprises forming a...
US20090278112 METHODS FOR ETCHING CARBON NANO-TUBE FILMS FOR USE IN NON-VOLATILE MEMORIES  
Memory cells, and methods of forming such memory cells are provided that include a steering element coupled to a carbon-based reversible resistivity-switching material. In particular embodiments,...
US20090278111 RESISTIVE CHANGING DEVICE  
A device that incorporates teachings of the present disclosure may include, for example, a memory array having a first array of nanotubes, a second array of nanotubes, and a resistive change...
US20090278108 Phase change memory device having phase change material layer containing phase change nano particles and method of fabricating the same  
A phase change memory device including a phase change material layer having phase change nano particles and a method of fabricating the same are provided. The phase change memory device may include...
US20090272961 SURFACE TREATMENT TO IMPROVE RESISTIVE-SWITCHING CHARACTERISTICS  
This disclosure provides a method of fabricating a semiconductor device layer and associated memory cell structures. By performing a surface treatment process (such as ion bombardment) of a...
US20090267646 Nano-Electron Fluidic Logic (NFL) Device  
A nano-electron fluidic logic (NFL) device for controlling launching and propagation of at least one surface plasma wave (SPW) is disclosed. The NFL device comprises a metallic gate patterned with...
US20090267045 PHASE CHANGE MEMORY DEVICE HAVING HEATERS AND METHOD FOR MANUFACTURING THE SAME  
A phase change memory device includes switching elements formed on a substrate that includes a cell region and a peripheral region. Heat sinks are formed on the switching elements. Heaters are...
US20090267044 PHASE CHANGE MEMORY DEVICE HAVING A BENT HEATER AND METHOD FOR MANUFACTURING THE SAME  
A phase change memory device includes heaters which are formed in their respective memory cells and vertically positioned stack patterns having phase change layers and top electrodes which are...
US20090263934 METHODS OF FORMING CHALCOGENIDE FILMS AND METHODS OF MANUFACTURING MEMORY DEVICES USING THE SAME  
A method of forming a chalcogenide film is provided which includes forming a germanium film on a substrate by exposing the substrate to a germanium source and a first antimony source, and growing a...
US20090261315 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING THE SAME  
A semiconductor integrated circuit device including: a semiconductor substrate on which a circuit is formed; a plurality of functional device arrays stacked on the semiconductor substrate; and...
US20090256131 MEMORY CELL THAT EMPLOYS A SELECTIVELY FABRICATED CARBON NANO-TUBE REVERSIBLE RESISTANCE-SWITCHING ELEMENT FORMED OVER A BOTTOM CONDUCTOR AND METHODS OF FORMING THE SAME  
In some aspects, a method of fabricating a memory cell is provided that includes: (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube (“CNT”)...
US20090256127 Compounds for Depositing Tellurium-Containing Films  
Disclosed herein are tellurium metal-organic precursors and methods for depositing tellurium-containing films on a substrate.
US20090250682 PHASE CHANGE MEMORY DEVICE  
Provided is a phase change memory device. The phase change memory device includes a first electrode and a second electrode. A phase change material pattern is interposed between the first and...
US20090250677 Reducing drift in chalcogenide devices  
Chalcogenide materials conventionally used in chalcogenide memory devices and ovonic threshold switches may exhibit a tendency called drift, wherein threshold voltage or resistance changes with...
US20090250676 LIQUID CRYSTALLINE ORGANIC SEMICONDUCTOR MATERIAL, AND SEMICONDUCTOR ELEMENT OR INFORMATION RECORDING MEDIUM USING THE SAME  
An liquid crystalline organic semiconductor material practical as an organic semiconductor is provided. The material is a liquid crystal composition having a smectic liquid crystal phase. The...
US20090242868 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
A solid electrolyte memory involves a problem that stable rewriting is difficult since the amount of ions in the solid electrolyte and the shape of the electrode are changed by repeating rewriting....
US20090242867 PHASE CHANGE MEMORY DEVICE HAVING PROTECTIVE LAYER FOR PROTECTING PHASE CHANGE MATERIAL AND METHOD FOR MANUFACTURING THE SAME  
A phase change memory device includes a semiconductor substrate, a plurality of bottom electrodes formed on the substrate, a plurality of phase change structures formed on the semiconductor...
US20090236583 Method of fabricating a phase change memory and phase change memory  
The present invention relates to a phase change memory and a method of fabricating a phase change memory. The phase change memory includes a heater structure disposed on a phase change material...
US20090230378 RESISTIVE MEMORY DEVICES  
Provided is a resistive memory device that can be integrated with a high integration density and method of forming the same. An insulating layer enclosing a resistive memory element and an...
US20090230375 Phase Change Memory Device  
A semiconductor device is provided which includes a substrate having a dielectric layer formed thereon, a heating element formed in the dielectric layer, a phase change element formed on the...
US20090224223 FUNCTIONAL MOLECULAR ELEMENT  
A functional molecular element is provided. The functional molecular element is adapted to change, by application of electric field, conformation of a disc shape like organic metallic complex...
US20090219751 PHASE CHANGE MEMORY  
A PCRAM cell has a high resistivity bottom electrode cap to provide partial heating near the interface between the cell and the bottom electrode, preventing separation of the amorphous GST region...
US20090218559 Integrated Circuit, Memory Cell Array, Memory Module, and Method of Manufacturing an Integrated Circuit  
According to one embodiment of the present invention, an integrated circuit is provided including a plurality of magneto-resistive memory cells. Each memory cell includes a magnetic tunneling...
US20090212274 PHASE CHANGE MEMORY RANDOM ACCESS DEVICE USING SINGLE-ELEMENT PHASE CHANGE MATERIAL  
A phase change memory cell with a single element phase change thin film layer; and a first electrode and a second electrode coupled to the single element phase change thin film layer. A current...
US20090206318 Nonvolatile memory device and method of manufacturing the same  
A nonvolatile memory device, including a lower electrode on a semiconductor substrate, a phase change material pattern on the lower electrode, an adhesion pattern on the phase change material...
US20090206317 PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A method for manufacturing a phase change memory device includes steps of forming a first encapsulation layer on a semiconductor substrate having a bottom electrode contact and a phase change...
US20090206316 INTEGRATED CIRCUIT INCLUDING U-SHAPED ACCESS DEVICE  
An integrated circuit includes a U-shaped access device and a first line coupled to a first side of the access device. The integrated circuit includes a contact coupled to a second side of the...
US20090206315 INTEGRATED CIRCUIT INCLUDING U-SHAPED ACCESS DEVICE  
An integrated circuit includes a first contact, a second contact, and a U-shaped access device coupled to the first contact and the second contact. The integrated circuit includes self-aligned...
US20090200640 VARIABLE RESISTIVE ELEMENT, AND ITS MANUFACTURING METHOD  
A variable resistive element comprising a configuration that an area of an electrically contributing region of a variable resistor body is finer than that constrained by an upper electrode or a...
US20090200537 PHASE CHANGE MEMORY DEVICE PREVENTING CONTACT LOSS AND METHOD FOR MANUFACTURING THE SAME  
A phase change memory device includes a silicon substrate having a phase change cell region. A plurality of phase change cell are formed in the phase change region of the silicon substrate. A...
US20090200535 Non-Volatile Memory Element with Improved Temperature Stability  
An integrated circuit including a memory element is described. The memory element includes a solid electrolyte layer that includes a matrix material having a metal dissolved therein, and a dopant...
US20090196089 Phase change material, phase change memory device including the same, and methods of manufacturing and operating the phase change memory device  
Disclosed may be a phase change material alloy, a phase change memory device including the same, and methods of manufacturing and operating the phase change memory device. The phase change material...
US20090194760 Memory element and display device  
Disclosed herein is a memory element, including a parallel combination of a thin film transistor; and a resistance change element, the thin film transistor including a semiconductor thin film in...
US20090194759 PHASE CHANGE MEMORY DEVICE  
A phase change memory device is disclosed, including a substrate, a phase change layer over the substrate, a first electrode electrically connecting a first side of the phase change layer, a second...
US20090194758 HEATING CENTER PCRAM STRUCTURE AND METHODS FOR MAKING  
Memory devices are described along with manufacturing methods. A memory device as described herein includes a bottom electrode and a first phase change layer comprising a first phase change...
US20090191367 MEMORY DEVICES, STYLUS-SHAPED STRUCTURES, ELECTRONIC APPARATUSES, AND METHODS FOR FABRICATING THE SAME  
An exemplary hollow stylus-shaped structure is disclosed, including a hollow column spacer formed over a base layer and a hollow cone spacer stacked over the hollow column spacer, wherein the...
US20090189142 Phase-Change Memory  
A phase-change memory element with side-wall contacts is disclosed, which has a bottom electrode. A non-metallic layer is formed on the electrode, exposing the periphery of the top surface of the...
US20090189141 Phase change memory device and method of forming the same  
A phase change memory device and a method of forming the same include a conductive pattern formed on a substrate. A lower electrode contact is disposed on the conductive pattern. The phase change...
US20090189140 PHASE-CHANGE MEMORY ELEMENT  
A phase-change memory element with side-wall contacts is disclosed. The phase-change memory element comprises a bottom electrode. A first dielectric layer is formed on the bottom electrode. A first...
US20090189139 PORE PHASE CHANGE MATERIAL CELL FABRICATED FROM RECESSED PILLAR  
A method of manufacturing an electrode is provided that includes providing a pillar of a first phase change material atop a conductive structure of a dielectric layer; or the inverted structure;...
US20090189138 FILL-IN ETCHING FREE PORE DEVICE  
A memory cell includes a memory cell layer with a first dielectric layer over a bottom electrode layer, a second dielectric layer over the first dielectric layer, and a top electrode over the...
US20090185412 PHASE-CHANGE MATERIAL, MEMORY UNIT AND METHOD FOR ELECTRICALLY STORING/READING DATA  
A phase-change material and a memory unit using the phase-change material are provided. The phase-change material is in a single crystalline state and includes a compound of a metal oxide or...
US20090184309 PHASE CHANGE MEMORY CELL WITH HEATER AND METHOD THEREFOR  
A method for forming a phase change memory cell (PCM) includes forming a heater for the phase change memory and forming a phase change structrure electrically coupled to the heater. The forming a...
US20090184306 PHASE CHANGE MEMORY CELL WITH FINFET AND METHOD THEREFOR  
A phase change memory (PCM) cell includes a transistor, a PCM structure, and a heater. The transistor has a first current electrode and a second current electrode in a structure, and a channel...
US20090184304 PHASE CHANGE MEMORY DEVICE HAVING PLUG-SHAPED PHASE CHANGE LAYERS AND METHOD FOR MANUFACTURING THE SAME  
A phase change memory device having plug-shaped phase change layers and a process of manufacturing the same is provided. The device and process includes forming first electrodes on a substrate. An...
US20090180313 Chalcogenide anti-fuse  
An ovonic threshold switch may be used to form an anti-fuse. As manufactured, the fuse may be in its amorphous state, as is conventional for ovonic threshold switches. However, when exposed to a...
US20090173930 MEMORY ELEMENT AND MEMORY DEVICE  
A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in...
US20090173928 POLYSILICON EMITTER BJT ACCESS DEVICE FOR PCRAM  
A resistive non-volatile memory cell with a bipolar junction transistor (BJT) access device formed in conjunction with the entire memory cell. The memory cell includes a substrate acting as a...
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