Matches 1 - 50 out of 62 1 2 >
Match Document Document Title
US20090294791 ELECTRODE FOR SEMICONDUCTOR LIGHT EMITTING DEVICE  
An object of the present invention is to provide an electrode that can produce powerful light emission with low driving voltage, without reducing crystallinity. The electrode for a semiconductor...
US20090278158 GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME  
The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a low driving voltage Vf. The gallium nitride based...
US20090269870 LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE AND SEMICONDUCTOR DEVICE  
It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method. One feature of the invention...
US20090269869 Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same  
Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may...
US20090268134 THIN FILM TRANSISTOR ARRAY PANEL AND A METHOD FOR MANUFACTURING THE SAME  
A liquid crystal display includes a first substrate, a plurality of gate lines formed on the first substrate, a plurality of data lines intersecting the gate lines, a plurality of thin film...
US20090267106 SEMICONDUCTOR LIGHT EMITTING DEVICE  
Embodiments provides a semiconductor light emitting device, which comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second...
US20090267103 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF  
The invention provides a gallium nitride based compound semiconductor light emitting device with excellent light extracting efficiency and its production method. A light emitting device, obtained...
US20090267102 LIGHT EMITTING DIODE PACKAGE STRUCTURE AND METHOD FOR FABRICATING THE SAME  
A light emitting diode (LED) package structure includes a carrier, a first protrusion, a LED chip, and an adhesion layer. The first protrusion is disposed on the carrier and has a first opening to...
US20090267098 SEMICONDUCTOR LIGHT EMITTING DEVICE  
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor...
US20090267092 LIGHT-EMITTING DEVICE  
A light-emitting device of the present invention includes: a semiconductor layer 1 including a light-emitting layer 12 ; a recess/projection portion 14 including recesses and projections...
US20090262773 Optoelectronic Semiconductor Component With Current Spreading Layer  
An optoelectronic semiconductor component comprising a semiconductor body ( 10 ) and a current spreading layer ( 3 ) is specified. The current spreading layer ( 3 ) is applied to the semiconductor...
US20090261370 SEMICONDUCTOR LIGHT EMITTING DEVICE  
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer under the first conductive...
US20090261357 SOLID STATE LIGHT SHEET AND BARE DIE SEMICONDUCTOR CIRCUITS WITH SERIES CONNECTED BARE DIE CIRCUIT ELEMENTS  
An electronically active sheet includes a bottom substrate having a bottom electrically conductive surface. A top substrate having a top electrically conductive surface is disposed facing the...
US20090250712 LIGHT EMITTING DEVICE  
A light emitting device is provided, which includes a light-emitting structure and a magnetic material. The light-emitting structure has an exciting binding energy of a bandgap. The magnetic...
US20090242918 High Efficiency Group III Nitride LED with Lenticular Surface  
A light emitting diode is disclosed that includes a conductive substrate, a bonding metal on the conductive substrate and a barrier metal layer on the bonding metal. A mirror layer is encapsulated...
US20090242881 THIN FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE DISPLAY DEVICE  
A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen...
US20090224275 LIGHT EMITTING DIODE AND METHOD  
A light emitting diode and methods of forming the same are provided. The light emitting diode includes an epitaxy chip having a first substrate, a first conductive semiconductor layer, a light...
US20090184337 Light-Emitting Diode, Package Structure Thereof and Manufacturing Method for the Same  
A light-emitting diode includes a sapphire substrate, an n-type semiconductor, a light-emitting layer, a p-type semiconductor layer, an anode and a conductive material. The n-type semiconductor...
US20090184329 Positive electrode for semiconductor light-emitting device  
An object of the present invention is to provide a transparent positive electrode for use in a face-up-type chip which can emit intense light even using a low drive voltage. The inventive positive...
US20090179209 LIGHT EMITTING DEVICE  
A light emitting device is provided. In the present invention, a magnetic material is added to the light emitting device to change the current path and the distribution of the current density. As...
US20090162959 METHOD FOR FABRICATING LIGHT EMITTING DIODE ELEMENT  
The present invention discloses a method for fabricating a light emitting diode element, which incorporates an epitaxial process with an etching process to etch LED epitaxial layers bottom up and...
US20090134407 A1 ALLOY FILM, ELECTRONIC DEVICE, AND ACTIVE MATRIX SUBSTRATE FOR USE IN ELECTROOPTIC DISPLAY DEVICE  
In accordance with one aspect of the present invention, an Al alloy film contains a first additive element composed of Ni, and at least one type of second additive element selected from the group...
US20090101928 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME  
Provided are a light emitting diode and a method of fabricating the same. In an inorganic light emitting diode, at least one layer selected from a group consisting of an oxide layer, a nitride...
US20090065794 Light emitting diode device and manufacturing method therof  
A light-emitting diode (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first type conductivity semiconductor layer, an active layer, a...
US20090057707 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME  
A semiconductor light emitting device includes: a laminated body including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first...
US20090057706 SET OF OHMIC CONTACT ELECTRODES ON BOTH P-TYPE AND N-TYPE LAYERS FOR GAN-BASED LED AND METHOD FOR FABRICATING THE SAME  
The present disclosure relates to set of a ohmic contact electrodes on both P-type and N-type layers of a GaN-based light emitting diode (LED) and a fabricating method thereof. The materials of...
US20090053844 METHOD FOR FABRICATING PIXEL STRUCTURE  
A method for fabricating a pixel structure is provided. A substrate having a gate thereon is provided. Next, a gate dielectric layer is formed to cover the gate. A channel layer is formed on the...
US20090014748 METHOD OF ELECTRICALLY CONNECTING ELEMENT TO WIRING, METHOD OF PRODUCING LIGHT-EMITTING ELEMENT ASSEMBLY, AND LIGHT-EMITTING ELEMENT ASSEMBLY  
A method of electrically connecting an element to wiring includes the steps of forming a conductive fixing member precursor layer at least on wiring provided on a base, and arranging an element...
US20090008672 LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP  
There is provided a light-emitting device having high reliability and excellent light extraction efficiency, a manufacturing method thereof, and a lamp. A light-emitting device includes a...
US20090008667 METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE  
Oxidation treatment is performed to the surface of a substrate provided with a photocatalytic conductive film and an insulating film; treatment with a silane coupling agent is performed, so that a...
US20090001407 SEMICONDUCTOR LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF, AND LAMP  
There is provided a semiconductor light-emitting device having excellent light extraction efficiency, a manufacturing method thereof, and a lamp. A semiconductor light-emitting device 1 includes:...
US20080308833 Group III nitride-based compound semiconductor light-emitting device  
The refractive index of a titanium oxide layer is modified by adding an impurity (e.g., niobium (Nb)) thereto within a range where good electrical conductivity is obtained. The Group III...
US20080296603 Light emitting device with high light extraction efficiency  
An exemplary solid-state light emitting device includes a substrate, a light emitting structure, a first electrode and a second electrode have opposite polarities with each other. The light...
US20080290364 Semiconductor light-emitting element and a producing method thereof  
A semiconductor light-emitting element 100 is formed including a buffer layer 102, a n-type GaN layer 103, a light-emitting layer 104 and a p-type layer 105 laminated in this order on a...
US20080283858 LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME  
A light-emitting diode includes: a light-emitting structure, a transparent electrically conductive thick film, a first electrical contact and a second electrical contact. The light-emitting...
US20080277681 LIGHT EMITTING DIODE  
A light emitting diode includes a substrate, a reflecting layer, an active layer, a transparent electrode, a first photonic crystal structure, and a second photonic crystal structure. The...
US20080265272 Light Emitting Device Having Zener Diode Therein And Method Of Fabricating The Same  
Disclosed are a light emitting device having a zener diode therein and a method of fabricating the light emitting device. The light emitting device comprises a P-type silicon substrate having a...
US20080258161 Transparent ohmic Contacts on Light Emitting Diodes with Carrier Substrates  
A light emitting diode is disclosed that includes an active structure formed of at least p-type and n-type epitaxial layers of Group III nitride on a conductive carrier substrate. A conductive...
US20080251796 Light Emitting Device and Method of Manufacturing the Same  
The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a...
US20080246047 SEMICONDUCTOR LIGHT-EMITTING DEVICE  
A semiconductor light-emitting device comprises an N-type semiconductor layer, an active layer formed on the surface of the N-type semiconductor layer, a P-type semiconductor layer formed on the...
US20080224168 Intride-based semiconductor light emitting diode and method of manufacturing the same  
A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially...
US20080224165 Top-Emitting Light Emitting Diodes and Methods of Manufacturing Thereof  
Provided are a top-emitting nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface...
US20080217638 Semiconductor Light Emitting Device and Fabrication Method Thereof  
A semiconductor light emitting device includes a first semiconductor layer having a bottom surface with uneven patterns, an active layer formed on the first semiconductor layer, a second...
US20080191226 Nitride Semiconductor Light-Emitting Device and Method for Fabrication Thereof  
A nitride semiconductor light-emitting device includes a substrate, a nitride semiconductor layer incorporating therein a first electroconductive semiconductor layer, a light-emitting layer and a...
US20080190479 Optoelectronical semiconductor device  
An optoelectronical semiconductor device having a bonding structure comprises a first optoelectronical structure, a second optoelectronical structure, and a transparent bonding structure formed...
US20080185609 Electrode and group III nitride-based compound semiconductor light-emitting device having the electrode  
An object of the invention is to prevent migration of silver contained in an electrode of a Group III nitride-based compound semiconductor light-emitting device. An n-type Al x Ga y In 1-x-y N...
US20080176346 METHOD FOR MANUFACTURING PIXEL STRUCTURE  
A method for manufacturing a pixel structure includes providing a substrate having an active device thereon and forming a dielectric layer covering the active device. Then, an uneven first...
US20080157104 Liquid crystal panel having photo spacers for unimpeded display  
An exemplary liquid crystal panel ( 3 ) includes a first substrate ( 31 ), a second substrate ( 32 ) parallel to the first substrate, and a liquid crystal layer ( 33 ) sandwiched between the first...
US20080157099 ORGANIC LIGHT EMITTING DISPLAY AND FABRICATING METHOD THEREOF  
An organic light emitting display and a fabricating method thereof in which an alignment mark is formed in the non-display region. The organic light emitting display includes a substrate having a...
US20080144688 LIGHT EMITTING DEVICES WITH AN ELECTRICALLY ACTIVE TOP REFLECTOR CONTACT  
According to one described embodiment, a light emitting device structure includes an epitaxial contact layer disposed on an active region of the light emitting device structure, a multi-layer...
Matches 1 - 50 out of 62 1 2 >