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US20090256206 P-Channel germanium on insulator (GOI) one transistor memory cell  
According to one exemplary embodiment, a p-channel germanium on insulator (GOI) one transistor memory cell comprises a buried oxide (BOX) layer formed over a bulk substrate, and a gate formed over...
US20090166632 GATE DRIVER-ON-ARRAY STRUCTURE AND DISPLAY PANEL  
One object of the present invention is reduction of off current of a thin film transistor. Another object of the present invention is improvement of electric characteristics of the thin film...
US20080213956 FIELD EFFECT TRANSISTOR DEVICE INCLUDING AN ARRAY OF CHANNEL ELEMENTS  
The present invention relates to a semiconductor structure such as a field effect transistors (FETs) in which the channel region of each of the FETs is composed of an array of more than one...
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