Matches 1 - 4 out of 4
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US20080206938 LOW TEMPERATURE POLYSILICON THIN FILM TRANSISTOR DISPLAY AND METHOD OF FABRICATING THE SAME  
A display comprises a substrate, a polysilicon layer which is crystallized by a solid phase crystallization (SPC) method, a gate dielectric layer made of silicon oxy-nitride (SiON) and formed on...
US20080185667 Thin Film Semiconductor Device and Method for Manufacturing the Same  
An Mo film ( 6 ) is formed on a SiO 2 film ( 5 ) by particularly using the film thickness and the deposition temperature (ambient temperature in a sputtering chamber) as the primary parameters and...
US20080116460 NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD OF NON-VOLATILE MEMORY DEVICE AND MEMORY APPARATUS INCLUDING NON-VOLATILE MEMORY DEVICE  
A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and realizing improved blocking function with an oxide film that is thinner...
US20080079004 FIELD INSULATOR FET DEVICE AND FABRICATION MEHTOD THEREOF  
A FinFET and a fabrication method thereof. The FinFET device includes an SOI substrate realized through a substrate, a buried oxide layer formed on the substrate, and a silicon epitaxial layer...
Matches 1 - 4 out of 4