Matches 1 - 12 out of 12
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US20090283836 CMOS STRUCTURE INCLUDING PROTECTIVE SPACERS AND METHOD OF FORMING THEREOF  
The present invention provides a semiconductor device includes a substrate including a semiconducting region and isolation regions, a gate structure including a high-k gate dielectric layer atop...
US20090256203 Top Gate Thin Film Transistor with Independent Field Control for Off-Current Suppression  
A bottom-contacted top gate (TG) thin film transistor (TFT) with independent field control for off-current suppression is provided, along with an associated fabrication method. The method provides...
US20090236606 Dual Gate Layout for Thin Film Transistor  
A dual gate layout of a thin film transistor of liquid crystal display to alleviate dark current leakage is disclosed. The layout comprises ( 1 ) a polysilicon on a substrate having a L-shaped or a...
US20090195724 THIN FILM TRANSISTOR AND DISPLAY DEVICE HAVING THE SAME  
A thin-film transistor (TFT) is provided. The TFT includes a gate electrode; a dielectric layer and an active layer which are formed on the gate electrode; and source and drain electrodes which are...
US20090140294 HETERO-STRUCTURED, INVERTED-T FIELD EFFECT TRANSISTOR  
The present invention provides a method of forming a transistor. The method includes forming a first layer of a first semiconductor material above an insulation layer. The first semiconductor...
US20090108351 FINFET MEMORY DEVICE WITH DUAL SEPARATE GATES AND METHOD OF OPERATION  
A FinFET device comprises a front gate (FG) and a separate back gate (BG) disposed on opposite sides of the fine. The fin structure may act as a floating body of a volatile memory cell. The front...
US20090085121 Condensed Memory Cell Structure Using a FinFET  
An integrated circuit and method for manufacturing an integrated circuit are described. In one embodiment, the integrated circuit includes a memory cell that includes a resistivity changing memory...
US20090057758 Thin silicon-on-insulator high voltage transistor with body ground  
A silicon (Si)-on-insulator (SOI) high voltage transistor with a body ground is provided with an associated fabrication process. The method provides a SOI substrate with a buried oxide (BOX) layer...
US20080203462 Finfet-Based Non-Volatile Memory Device  
A non-volatile memory device on a substrate layer ( 2 ) comprises source and drain regions ( 3 ) and a channel region ( 4 ). The source and drain regions ( 3 ) and the channel region ( 4 ) are...
US20080128815 SELF-ALIGNED NANOMETER-LEVEL TRANSISTOR DEFINED WITHOUT LITHOGRAPHY  
A field effect transistor (FET) device structure and method for forming FETs for scaled semiconductor devices. Specifically, FinFET devices are fabricated from silicon-on-insulator (SOI) wafers in...
US20080093668 Method for the Manufacture of a Semiconductor Device and a Semiconductor Device Obtained Through It  
The invention relates to a semiconductor device ( 10 ) having a semiconductor body ( 2 ), comprising a field effect transistor, a first gate dielectric ( 6 A) being formed on a first surface at the...
US20080035933 THIN FILM TRANSISTOR ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE  
A thin film transistor array substrate includes a polysilicon layer having a predetermined pattern shape formed over a substrate, a first gate insulating film provided over the substrate and on the...
Matches 1 - 12 out of 12