Matches 1 - 6 out of 6
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US20090195296 Method for Recovering an On-State Forward Voltage and, Shrinking Stacking Faults in Bipolar Semiconductor Devices, and the Bipolar Semiconductor Devices  
In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time...
US20090026491 TUNNELING EFFECT TRANSISTOR WITH SELF-ALIGNED GATE  
In one embodiment, a mandrel and an outer dummy spacer may be employed to form a first conductivity type region. The mandrel is removed to form a recessed region wherein a second conductivity type...
US20080308839 INSULATED GATE BIPOLAR TRANSISTOR  
The invention realizes IGBT having an NPT structure which has a smaller variation in switching characteristics and the like and lower on-resistance. In the IGBT of the invention, by setting a ratio...
US20080157280 BJT AND METHOD FOR FABRICATING THE SAME  
According to one embodiment, a collector electrode including metal is used for a sink region for connecting an n+ type buried layer, so that the sink region can be narrowly formed. Further, an...
US20080150081 Semiconductor device  
A method comprising providing a substrate and forming a device on the substrate, wherein forming the device includes printing at least one region of inorganic semiconductor on the substrate.
US20080093707 SEMICONDUCTOR DEVICE PROVIDED WITH FLOATING ELECTRODE  
A semiconductor device has a first conductivity-type first semiconductor region, a second conductivity-type second semiconductor region and a second conductivity-type third semiconductor region...
Matches 1 - 6 out of 6