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US20090289254 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film....
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US20090284501 |
PIXEL DRIVER CIRCUIT AND PIXEL CIRCUIT HAVING THE PIXEL DRIVER CIRCUIT
A pixel driver circuit for driving a light-emitting element and a pixel circuit having the pixel driver circuit are provided. The pixel driver circuit includes a data line, address lines, switch...
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US20090283766 |
Methods for increasing film thickness during the deposition of silicon films using liquid silane materials
Embodiments in accordance with the present invention relate to the fabrication of thin (>1 μm) polycrystalline, nanocrystalline, or amorphous silicon films on a substrate. Particular...
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US20090278125 |
CRYSTALLINE SEMICONDUCTOR FILMS, GROWTH OF SUCH FILMS AND DEVICES INCLUDING SUCH FILMS
The present invention describes an approach to grow highly crystalline semiconductor films, multilayers of semiconductor thin films on foreign substrate such as glass, quartz. Specifically, The...
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US20090272977 |
PIXEL STRUCTURE OF A THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY AND FABRICATING METHOD THEREOF
A method of fabricating a pixel structure of a thin film transistor liquid crystal display is provided. A transparent conductive layer and a first metallic layer are sequentially formed over a...
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US20090272435 |
COMPOSITIONALLY-GRADED AND STRUCTURALLY-GRADED PHOTOVOLTAIC DEVICES AND METHODS OF FABRICATING SUCH DEVICES
A semiconductor structure is described, including a semiconductor substrate and a semiconductor layer disposed on the semiconductor substrate. The semiconductor layer is both compositionally graded...
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US20090267062 |
Zinc oxide Based Compound Semiconductor Device
There is provided a zinc oxide based compound semiconductor device which, even when a semiconductor device is formed by forming a lamination portion having a hetero junction of ZnO based compound...
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US20090266396 |
Polycrystalline Silicon Substrate, Method for Producing Same, Polycrystalline Silicon Ingot, Photoelectric Converter and Photoelectric Conversion Module
Disclosed is a polycrystalline silicon substrate having a region wherein concentrations of impurities contained therein satisfy the following relations: [Oi]≧2E17 [atoms/cm 3 ] (under condition...
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US20090261349 |
SEMICONDUCTOR DEVICE WITH STRAINED CHANNEL AND METHOD OF FABRICATING THE SAME
A semiconductor device includes: a gate pattern over a substrate; recess patterns provided in the substrate at both sides of the gate pattern, each having a side surface extending below the gate...
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US20090261344 |
RELAXATION OF A STRAINED LAYER USING A MOLTEN LAYER
A method for making a crystalline wafer, in which an interface layer is associated with a support substrate. A first layer is associated with the interface layer in a strained state. The interface...
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US20090261343 |
HIGH-DENSITY NONVOLATILE MEMORY AND METHODS OF MAKING THE SAME
Nonvolatile memory cells and methods of forming the same are provided, the methods including forming a first conductor at a first height above a substrate; forming a first pillar-shaped...
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US20090261340 |
DISPLAY SUBSTRATE, LIQUID CRYSTAL DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE
A display substrate includes; a gate line disposed on a substrate, a first insulating layer disposed on the substrate including the gate line, the first insulating layer including an opening part...
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US20090261334 |
Liquid crystal display device
A thin film transistor substrate of fringe field switching type and a fabricating method thereof for simplifying a process are disclosed. In the thin film transistor substrate of fringe field...
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US20090256153 |
THIN FILM TRANSISTOR MATRIX DEVICE AND METHOD FOR FABRICATING THE SAME
A method for fabricating a thin film transistor matrix device which includes forming a transparent insulating substrate, arranging a plurality of thin film transistors on the substrate in a matrix,...
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US20090256152 |
PIXEL STRUCTURE FOR TRANSFLECTIVE LCD PANEL
A pixel structure for a transflective LCD having a transparent region and a reflective region is provided. The pixel structure includes a transparent substrate, a TFT, at least one reflective...
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US20090256151 |
DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
A display substrate comprises a substrate; a source electrode arranged on the substrate; a drain electrode arranged on the substrate and spaced from the source electrode; a semiconductor layer...
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US20090256146 |
SEMICONDUCTOR SUBSTRATE WITH SOLID PHASE EPITAXIAL REGROWTH WITH REDUCED DEPTH OF DOPING PROFILE AND METHOD OF PRODUCING SAME
Method of producing a semiconductor device, comprising: a) providing a semiconductor substrate, b) providing an insulating layer on a top surface of the semiconductor substrate, c) making an...
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US20090242896 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A microstructure and a semiconductor element which are included in a micromachine have been generally formed in different steps. It is an object to provide a method for manufacturing a micromachine...
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US20090242893 |
Semiconductor device, production method thereof, and display device
The present invention provides a semiconductor device which can be produced by simple and cheap processes and effectively achieve improved performances and a reduced electric power consumption....
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US20090242891 |
THIN-FILM SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A thin-film semiconductor device including a transparent insulating substrate, an island semiconductor layer formed on the transparent insulating substrate and including a source region containing...
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US20090242886 |
THIN FILM TRANSISTOR SUBSTRATE
In forming a thin film transistor using multi-tone exposure, a wiring width of a foundational wiring is 40 μm or less, and a ratio of a wiring width of a foundational wiring in a dense case to a...
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US20090236600 |
THIN FILM TRANSISTOR AND DISPLAY DEVICE
A thin film transistor is provided, which includes a gate insulating layer covering a gate electrode, a microcrystalline semiconductor layer provided over the gate insulating layer, an amorphous...
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US20090230427 |
SEMICONDUCTOR DEVICES HAVING TENSILE AND/OR COMPRESSIVE STRESS AND METHODS OF MANUFACTURING
Semiconductor devices are provided which have a tensile and/or compressive strain applied thereto and methods of manufacturing. The structure includes a gate stack comprising an oxide layer, a...
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US20090230398 |
THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF REPAIRING THE SAME
A thin-film transistor substrate includes; gate lines which extend in a first direction, the gate lines including a first gate line and a second gate line, the first gate line disposed adjacent to...
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US20090230395 |
THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
A thin film transistor substrate and a method for manufacturing the same are provided. The thin film transistor substrate has a display area and a pad area defined in the vicinity of the display...
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US20090230393 |
DIODE
In a pn junction diode having a conductivity modulating element provided on a first principal surface of a semiconductor substrate, when an impurity concentration of a p type impurity region is...
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US20090224249 |
Method For Manufacturing EL Display Device
A manufacture process of a thin film transistor mounted on an EL display device is simplified. A thin film transistor is manufactured by stacking a first conductive film, an insulating film, a...
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US20090224244 |
PATTERNING OF SUBMICRON PILLARS IN A MEMORY ARRAY
Methods in accordance with the invention involve patterning and etching very small dimension pillars, such as in formation of a memory array in accordance with the invention. When dimensions of...
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US20090218577 |
HIGH THROUGHPUT CRYSTALLIZATION OF THIN FILMS
Under one aspect, a method of processing a film includes defining a plurality of spaced-apart regions to be crystallized within a film, the film being disposed on a substrate and capable of...
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US20090218566 |
LOCALIZED COMPRESSIVE STRAINED SEMICONDUCTOR
One aspect of the present subject matter relates to a method for forming strained semiconductor film. According to an embodiment of the method, a crystalline semiconductor bridge is formed over a...
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US20090218556 |
INTEGRATED CIRCUIT FABRICATED USING AN OXIDIZED POLYSILICON MASK
An integrated circuit includes a first electrode, a second electrode, and dielectric material including an opening. The opening is defined by etching the dielectric material based on an oxidized...
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US20090212293 |
Semiconductor device and method for fabricating the same
A semiconductor device, comprising a substrate, a semiconductive layer and a gate electrode is provided. The semiconductive layer having a crystallization promoting material is formed over the...
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US20090212283 |
Diode and resistive memory device structures
In an electronic device, a diode and a resistive memory device are connected in series. The diode may take a variety of forms, including oxide or silicon layers, and one of the layers of the diode...
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US20090206368 |
Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials
Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal...
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US20090206344 |
System for displaying images
A system for displaying images is disclosed. The system includes a self-emitting display device including an array substrate having a pixel region. A light-emitting diode is disposed on the array...
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US20090206340 |
Thin Film Transistor Array Panel
A thin film transistor array panel is provided according to one or more embodiments. In an embodiment, the thin film transistor array panel includes: a base substrate that has a display area and a...
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US20090206335 |
Bipolar complementary semiconductor device
The invention relates to a BiCMOS device comprising a substrate having a first type of conductivity and a number of active regions that are provided therein and are delimited in a lateral direction...
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US20090200555 |
Thin film transistor substrate, defect repairing method therefor, and display device
A thin film transistor substrate includes: a substrate; a thin film transistor and a capacitor formed on the substrate; and a protective film for protecting an electrode on a back surface side of...
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US20090200554 |
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
The display device includes a substrate, a thin film transistor (TFT), which includes a gate electrode, a semiconductor layer, and source and drain electrodes, on the substrate member, a...
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US20090200552 |
MICROCRYSTALLINE SILICON THIN FILM TRANSISTOR
Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a...
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US20090200551 |
MICROCRYSTALLINE SILICON THIN FILM TRANSISTOR
Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a...
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US20090189159 |
GETTERING LAYER ON SUBSTRATE
Disclosed herein are devices, methods and systems for implementing gettering layers. Devices including gettering layers can be implemented such that a gettering layer doped with carbon, boron,...
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US20090186440 |
METHODS, APPARATUS, AND ROLLERS FOR CROSS-WEB FORMING OF OPTOELECTRONIC DEVICES
Apparatus and methods for forming optoelectronic devices such as an array of light emitting diodes or photovoltaic cells in one embodiment a roll-to-roll process in which a uniquely configured...
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US20090184321 |
MICROCRYSTALLINE SILICON THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
This invention provides a top-gate microcrystalline thin film transistor and a method for manufacturing the same. An inversion layer channel is formed in a top interface of a microcrystalline...
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US20090179201 |
Laser Chalcogenide Phase Change Device
A laser activated phase change device for use in an integrated circuit comprises a chalcogenide fuse configured to connect a first patterned metal line and a second patterned metal line and...
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US20090173950 |
CONTROLLING DIAMOND FILM SURFACES AND LAYERING
A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first...
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US20090173947 |
DISPLAY SUBSTRATE AND DISPLAY PANEL HAVING THE SAME
A display substrate according to exemplary embodiments of the present invention includes a transistor layer, a color filter layer and a pixel electrode. The transistor layer includes a transistor...
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US20090173941 |
METHOD FOR FABRICATING A SEMICONDUCTOR STRUCTURES AND STRUCTURES THEREOF
Methods of fabricating a semiconductor structure with a non-epitaxial thin film disposed on a surface of a substrate of the semiconductor structure; and semiconductor structures formed thereof are...
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US20090166635 |
ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
An array substrate includes a base substrate, a gate line, a gate insulation layer, a data line, a thin-film transistor (“TFT”) and a pixel electrode. The gate line includes a gate covering...
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US20090166634 |
PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF
A pixel structure including a gate, a gate dielectric layer, a patterned semiconductor layer having a channel area disposed above the gate, a patterned dielectric layer having an etching-stop layer...
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