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US20090267130 STRUCTURE AND PROCESS INTEGRATION FOR FLASH STORAGE ELEMENT AND DUAL CONDUCTOR COMPLEMENTARY MOSFETS  
A method is provided for simultaneously fabricating a flash storage element, an NFET and a PFET having metal gates with different workfunctions. A first gate metal layer of the NFET having a first...
US20090267127 Single Poly NVM Devices and Arrays  
A single-poly non-volatile memory includes a PMOS select transistor ( 210 ) formed with a select gate ( 212 ), and P+ source and drain regions ( 211, 213 ) formed in a shared n-well region ( 240 ),...
US20090261397 Integrated Circuit with Floating-Gate Electrodes Including a Transition Metal and Corresponding Manufacturing Method  
An integrated circuit is described. The integrated circuit may comprise a multitude of floating-gate electrodes, wherein at least one of the floating-gate electrodes has a lower width and an upper...
US20090242958 NAND-TYPE NONVOLATILE SEMICONDUCTOR MEMORY DEVICE  
The present invention provides a high-performance MONOS-type NAND-type nonvolatile semiconductor memory device using an aluminum oxide film as a part of gate insulating film in a select transistor...
US20090242955 Integrated Circuit, Memory Device and Methods of Manufacturing the Same  
An integrated circuit includes: a contact structure with a first stack of at least two conductive layers, and a gate electrode with a second stack of conductive layers, the second stack of layers...
US20090206386 DECODING SYSTEM CAPABLE OF CHARGING PROTECTION FOR FLASH MEMORY DEVICES  
One embodiment of the present invention relates to a flash memory array. The flash memory array comprises at least two word lines of gate electrode material. At least one of the word lines is...
US20090194804 NON-VOLATILE MEMORY CELL  
Disclosed herein are non-volatile cells and methods of manufacturing the same. The nonvolatile memory cells include a high voltage device, a low voltage device, and a memory cell formed on a...
US20090179262 Floating Body Memory Cell with a Non-Overlapping Gate Electrode  
An integrated circuit includes a memory cell with a transistor. The transistor includes first and second doped portions, and a third portion disposed between the first and second doped portions....
US20090159956 NOR FLASH MEMORY AND METHOD OF MANUFACTURING THE SAME  
A NOR flash memory has a plurality of memory cell transistors, wherein each memory cell transistor shares the source diffusion layer with another memory cell transistor adjacent thereto on one side...
US20090159946 Logic Non-Volatile Memory Cell with Improved Data Retention Ability  
A memory cell includes a semiconductor substrate; and a first, a second, and a third transistor. The first transistor includes a first dielectric over the semiconductor substrate; and a first...
US20090146207 Nonvolatile Memory Devices Including Common Source  
Provided is a nonvolatile memory device including a common source. The device includes a first active region crossing a second active region, a common source disposed in the second active region,...
US20090146206 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME  
A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a...
US20090146190 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR MEMORY DEVICE  
According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory device, comprising a plurality of memory strings, each of the memory strings being constituted...
US20090140315 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor memory device comprises: a plurality of transistors having a stacked-gate structure, each transistor including a semiconductor substrate, a gate insulator formed on the...
US20090140313 Nonvolatile memory devices and methods of forming the same  
A method of forming nonvolatile memory devices according to example embodiments of the present invention includes forming a device isolation layer defining active regions in a semiconductor...
US20090122614 SINGLE POLY EEPROM ALLOWING CONTINUOUS ADJUSTMENT OF ITS THRESHOLD VOLTAGE  
A single-poly EEPROM memory device comprises a control gate isolated within a well of a first conductivity type in a semiconductor body of a second conductivity type, first and second tunneling...
US20090122603 INTEGRATED CIRCUIT EMBEDDED WITH NON-VOLATILE PROGRAMMABLE MEMORY HAVING VARIABLE COUPLING  
A programmable non-volatile device uses a floating gate that functions as a FET gate that overlaps a variable portion of a source/drain region. This allows a programming voltage for the device to...
US20090121277 Nonvolatile memory device and method of manufacturing the same  
The nonvolatile memory device includes a semiconductor substrate, and a device isolation layer defining an active region in the semiconductor substrate. The device isolation layer includes a top...
US20090114951 MEMORY DEVICE  
A memory device can be implemented including word lines connected to an array of memory transistors. Each memory transistor is also connected to bit lines and a select transistor. The select...
US20090095996 Semiconductor device  
A semiconductor device includes a substrate including an active region, a first impurity region, second impurity regions, a word line and a bit line. The active region has end portions extending in...
US20090090960 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME  
A non-volatile semiconductor storage device includes: a substrate; a control circuit layer provided on the substrate; a support layer provided on the control circuit layer; and a memory cell array...
US20090090958 Semiconductor Constructions  
Some embodiments include methods of forming a NAND cell unit having a NAND string gate closest to a select gate with a different width than other NAND string gates more distant from the select...
US20090078986 Manufacturing method for an integrated circuit including different types of gate stacks, corresponding intermediate integrated circuit structure and corresponding integrated circuit  
The present invention provides a manufacturing method for an integrated circuit and a corresponding integrated circuit. The integrated circuit comprises a plurality of first devices, each first...
US20090065845 Embedded semiconductor device and method of manufacturing an embedded semiconductor device  
Provided are an embedded semiconductor device and a method of manufacturing an embedded semiconductor device. In a method of manufacturing the embedded semiconductor device, layers of at least one...
US20090045445 CAPACITOR STRUCTURE USED FOR FLASH MEMORY  
A method of forming a capacitor for use as a charge pump with flash memory, comprising: (a) concurrently forming polysilicon gates on a semiconductor body in a core region and a polysilicon middle...
US20090040808 Nondestructive methods of reading information in ferroelectric memory elements  
The method of nondestructive data reading from the ferroelectric memory cell supplied with the electrodes was developed. This method implies supply of reading electric voltage to the memory element...
US20090039412 SEMICONDUCTOR DEVICE INCLUDING NONVOLATILE MEMORY AND METHOD OF FABRICATING THE SAME  
A semiconductor device including a nonvolatile memory and the fabrication method of the semiconductor device is described. There is provided a semiconductor device, including a semiconductor...
US20090039408 NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREOF  
A nonvolatile semiconductor memory of an aspect of the present invention comprises a first element isolation insulating film containing an organic substance which surrounds a first region, a memory...
US20090032859 FINFET FLASH MEMORY DEVICE WITH AN EXTENDED FLOATING BACK GATE  
A floating gate is formed on one side of the semiconductor fin on a floating gate dielectric. A control gate dielectric is formed on the opposite side of the semiconductor fin and on the floating...
US20090014779 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME  
A nonvolatile semiconductor memory device includes bit line diffusion layers extending along the X direction in an upper portion of a semiconductor substrate; and gate structures extending along...
US20090003081 Non-volatile memory and method of manufacturing same  
The number of process steps for manufacturing a non-volatile memory is reduced while the performance of the non-volatile memory is improved. The non-volatile memory has a memory cell in which...
US20080315296 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME  
A non-volatile semiconductor storage device 10 has a plurality of memory strings 100 with a plurality of electrically rewritable memory transistors MTr 1 -MTr 4 connected in series. The memory...
US20080308859 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor device including a semiconductor substrate, and a memory cell and a peripheral circuit provided on the semiconductor substrate, the memory cell having a first insulating film, a...
US20080296653 Semiconductor memory  
A semiconductor memory device of an aspect of the present invention comprises a plurality of memory cell transistors arranged in a memory cell array, a select transistor which is disposed in the...
US20080283905 Nonvolatile memory devices and methods of fabricating the same  
Provided are nonvolatile memory devices and methods of fabricating the same which may prevent or reduce deterioration of device characteristics and deterioration of a breakdown voltage. The...
US20080237700 Nonvolatile memory device having cell and peripheral regions and method of making the same  
A nonvolatile memory device and method of making the same are provided. Memory cells may be provided in a cell area wherein each memory cell has an insulative structure including a tunnel...
US20080211009 Process for manufacturing an electronic device integrated on semiconductor substrate comprising non volatile floating gate memories and an associated circuitry and corresponding electronic device  
An embodiment of a process is described for manufacturing a non volatile memory electronic device integrated on a semiconductor substrate which comprises a matrix of non volatile memory cells, the...
US20080211006 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME  
A nonvolatile semiconductor memory including a semiconductor substrate having an upper surface; a plurality of memory cell transistors formed in the semiconductor substrate, each memory cell...
US20080211005 SEMICONDUCTOR DEVICE  
There is provided a MOSFET-type semiconductor device having a coating insulating film formed to cover the surface portions of MOS transistors formed on a semiconductor substrate. The insulating...
US20080203465 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
The present invention provides a method for manufacturing a semiconductor device including the steps of forming a flash memory cell provided with a floating gate, an intermediate insulating film,...
US20080197403 SEMICONDUCTOR DEVICE  
A semiconductor device includes a semiconductor substrate, and nonvolatile memory cells, each of the cells including a channel region having a channel length and a channel width, a tunnel...
US20080186779 SEMICONDUCTOR DEVICE AND MEMORY AND METHOD OF OPERATING THEREOF  
A memory applicable to an embedded memory is provided. The memory includes a substrate, a gate, a charge-trapping gate dielectric layer, a source, and a drain. The gate is disposed above the...
US20080179659 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE  
A nonvolatile semiconductor memory device relating to one embodiment of this invention includes a substrate, a plurality of memory strings formed on said substrate, said memory string having a...
US20080179653 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME  
A semiconductor device having a nonvolatile memory is reduced in size. In an AND type flash memory having a plurality of nonvolatile memory cells having a plurality of first electrodes, a plurality...
US20080173933 SEMICONDUCTOR MEMORY DEVICE  
The semiconductor device includes a substrate having a conductive layer formed on its surface. The conductive layer has a columnar semiconductor formed thereon. The columnar semiconductor has an...
US20080173932 NONVOLATILE SEMICONDUCTOR MEMORY AND METHOD FOR MANUFACTURING THE SAME  
According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory including: a columnar semiconductor; a charge storage insulating film including: a first...
US20080173929 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME  
According to an aspect of the present invention, there is provided a semiconductor memory device including: a semiconductor substrate having: first device regions divided by first isolation films...
US20080157263 DUAL-BIT MEMORY DEVICE HAVING ISOLATION MATERIAL DISPOSED UNDERNEATH A BIT LINE SHARED BY ADJACENT DUAL-BIT MEMORY CELLS  
A dual-bit memory device is provided which includes trench isolation material disposed below a bit line that is shared by adjacent memory cells. The dual-bit memory device comprises a substrate, a...
US20080157176 Nonvolatile memory device and method of fabricating the same  
A nonvolatile memory device having lower bit line contact resistance and a method of fabricating the same is provided. In the nonvolatile memory device, a semiconductor substrate of a first...
US20080150011 INTEGRATED CIRCUIT SYSTEM WITH MEMORY SYSTEM  
A method for forming an integrated circuit system is provided including forming a substrate having a core region and a periphery region, forming a charge storage stack over the substrate in the...
Matches 1 - 50 out of 68 1 2 >