Matches 1 - 50 out of 146 1 2 3 >
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US20090302357 AMPLIFIERS USING GATED DIODES  
A circuit comprises a control line and a two terminal semiconductor device having first and second terminals. The first terminal is coupled to a signal line, and the second terminal is coupled to...
US20090294818 FERROELECTRIC POLYMER  
A ferroelectric film comprising polyaminodifluoroborane (PADFB). Also a memory device utilizing the ferroelectric film, a method of fabricating a ferroelectric polymer and a ferroelectric solution.
US20090294819 METHODS FOR ENHANCING CAPACITORS HAVING ROUGHENED FEATURES TO INCREASE CHARGE-STORAGE CAPACITY  
Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the...
US20090289289 DRAM CELL WITH MAGNETIC CAPACITOR  
A DRAM cell includes a substrate, a transistor, and a magnetic capacitor. The substrate is composed of semiconductor material with a main surface, the transistor is formed at the main surface, and...
US20090273963 SEMICONDUCTOR STORAGE DEVICE, SEMICONDUCTOR STORAGE DEVICE MANUFACTURING METHOD AND PACKAGE RESIN FORMING METHOD  
A ferroelectric capacitor comprising a transistor layer superimposed on a semiconductor substrate, a ferroelectric capacitor layer provided superior to the transistor layer, a wiring layer provided...
US20090267123 SEMICONDUCTOR DEVICE  
A semiconductor device includes: a semiconductor substrate; a plurality of transistors on the semiconductor substrate, each of the transistors has a source and drain region; an interlayer...
US20090267125 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME  
An isolation region comprises a step structure comprising a step surface that is perpendicular to a depth direction, an upper isolation region and a lower isolation region. An RC transistor is...
US20090261396 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE  
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes forming a portion of the unidirectional transistor...
US20090256182 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME  
A semiconductor memory device includes a memory cell portion and a peripheral circuit portion. The memory cell portion includes a pillar capacitor with a lower electrode, a dielectric film, and an...
US20090256180 Standard cell having compensation capacitance  
A standard cell includes a capacity element which is made up of a first well diffusion layer into which a first conductive impurity is diffused in a region from a surface of a substrate to a...
US20090256237 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DATA PROCESSING SYSTEM  
A miniaturized semiconductor device is provided by reducing the design thickness of a wiring line protecting film covering the surface of a wiring layer, and reducing the distance between the...
US20090251966 SEMICONDUCTOR MEMORY HAVING VOLATILE AND MULTI-BIT, NON-VOLATILE FUNCTIONALITY AND METHODS OF OPERATING  
A semiconductor memory cell, semiconductor memory devices comprising a plurality of the semiconductor memory cells, and methods of using the semiconductor memory cell and devices are described. A...
US20090251946 DATA CELLS WITH DRIVERS AND METHODS OF MAKING AND OPERATING THE SAME  
Disclosed are methods and devices, among which is a device that includes a first semiconductor fin having a first gate, a second semiconductor fin adjacent the first semiconductor fin and having a...
US20090242952 INTEGRATED CIRCUIT INCLUDING A CAPACITOR AND METHOD  
An integrated circuit including a capacitor and a method of fabricating an integrated circuit. The capacitor has a first electrode. A plurality of conductive lines is separated from each other and...
US20090242953 SHALLOW TRENCH CAPACITOR COMPATIBLE WITH HIGH-K / METAL GATE  
Forming a shallow trench capacitor in conjunction with an FET by forming a plurality of STI trenches; for the FET, implanting a first cell well having a first polarity between a first and a second...
US20090236602 Integrated Circuit, Semiconductor Device Comprising the Same, Electronic Device Having the Same, and Driving Method of the Same  
An integrated circuit mounting a DRAM which can realize high integration without complicated manufacturing steps. The integrated circuit according to the invention comprises a DRAM in which a...
US20090230510 SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME  
A rutile phase can be formed even in the case of a thin film by adding nickel or cobalt to titanium dioxide in the range of 0.5 to 10 atm %, and the use of this element-added titanium dioxide film...
US20090230447 Semiconductor Device and Method for Manufacturing the Same  
A semiconductor device may include a capacitor and a transistor on a silicon-on-insulator (SOI) substrate and a method for manufacturing the semiconductor device may include forming such a...
US20090230448 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF  
In a semiconductor integrated circuit device, testing pads ( 209 b ) using a conductive layer, such as relocation wiring layers ( 205 ) are provided just above or in the neighborhood of terminals...
US20090224301 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THEREOF  
A semiconductor memory device comprises a field effect transistor including a source/drain region, an interlayer insulation film burying the field effect transistor, a ferroelectric capacitor...
US20090212338 Semiconductor Constructions, And Methods Of Forming Semiconductor Constructions  
Some embodiments include methods of forming semiconductor constructions. Oxide is formed over a substrate, and first material is formed over the oxide. Second material is formed over the first...
US20090207681 SYSTEMS AND DEVICES INCLUDING LOCAL DATA LINES AND METHODS OF USING, MAKING, AND OPERATING THE SAME  
Disclosed are methods, systems and devices, including a device having a fin field-effect transistor with a first terminal, a second terminal, and two gates. In some embodiments, the device includes...
US20090200593 SEMICONDUCTOR DEVICE HAVING MOS-TRANSISTOR FORMED ON SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THEREOF  
A semiconductor device comprises MOS transistors sequentially arranged in the plane direction of a substrate, wherein a gate electrode and a wiring portion for connecting between the gate...
US20090194802 Semiconductor Constructions, and DRAM Arrays  
The invention includes methods for utilizing partial silicon-on-insulator (SOI) technology in combination with fin field effect transistor (finFET) technology to form transistors particularly...
US20090189222 SEMICONDUCTOR MEMORY DEVICE  
A memory includes a U-shape layer on a substrate; a first diffusion layer provided at an upper part of the U-shaped layer; a second diffusion layer provided at a lower part of the U-shaped layer; a...
US20090173980 PROVIDING ISOLATION FOR WORDLINE PASSING OVER DEEP TRENCH CAPACITOR  
A memory cell has an access transistor and a capacitor with an electrode disposed within a deep trench. STI oxide covers at least a portion of the electrode, and a liner covers a remaining portion...
US20090166702 TRENCH-TYPE SEMICONDUCTOR DEVICE STRUCTURE  
A trench-type semiconductor device structure is disclosed. The structure includes a semiconductor substrate, a gate dielectric layer and a substrate channel structure. The semiconductor substrate...
US20090166701 One transistor/one capacitor dynamic random access memory (1T/1C DRAM) cell  
In general, in one aspect, a method includes forming a semiconductor fin. A first insulating layer is formed adjacent to the semiconductor fin. A second insulating layer is formed over the first...
US20090166703 MEMORY DEVICE WITH A LENGTH-CONTROLLABLE CHANNEL  
A memory device is provided. The memory device includes a substrate, a trench having an upper portion and a lower portion formed in the substrate, a trench capacitor formed in the lower portion of...
US20090152608 DRAM Cell Transistor Device and Method  
A method for forming a memory device. The method provides a protective layer overlying a surface region of a substrate before threshold voltage implant. The method then includes depositing a photo...
US20090147580 One-transistor floating-body dram cell device with non-volatile function  
Disclosed herein is a one-transistor (1T) floating-body Dynamic Random Access Memory (DRAM) cell device with a non-volatile function for implementing the high integration/high performance DRAM. The...
US20090146254 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR  
This semiconductor device according to the present invention includes a plurality of cylindrical lower electrodes aligned densely in a memory array region; a plate-like support which is contacted...
US20090140308 Semiconductor device having capacitor formed on plug, and method of forming the same  
A semiconductor device includes a silicon substrate, a capacitor element having a lower electrode, a capacitor dielectric film, a TiN film, and a W film, and an interlayer insulation film covering...
US20090127603 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF  
A semiconductor memory device according to an embodiment comprises: a field-effect transistor formed on a substrate; an interlayer insulation film formed on the substrate on which the field-effect...
US20090127608 INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT  
An integrated circuit including a memory cell array is shown. The memory cell array comprises word lines extending in a first direction and bit lines extending in a second direction intersecting...
US20090121274 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME  
A salicide treatment is performed on a common source line to reduce surface resistance and contact resistance, thereby improving a cell current characteristic. Therefore, a chip can be reduced in...
US20090121268 Semiconductor Memory Devices Having Vertical Channel Transistors and Related Methods  
A semiconductor memory device may include a semiconductor substrate with an active region extending in a first direction parallel with respect to a surface of the semiconductor substrate. A pillar...
US20090108313 REDUCING SHORT CHANNEL EFFECTS IN TRANSISTORS  
Microelectronic structures and associated methods for reducing short channel effects in transistors are generally described. In one example, an apparatus includes a semiconductor channel, one or...
US20090102017 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE  
A semiconductor device and a method of fabricating a semiconductor device provide high quality cylindrical capacitors. The semiconductor device includes a substrate defining a cell region and a...
US20090101955 MOLECULAR ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME  
A molecular electronic device, and a method of fabricating the same, includes a first electrode having a plurality of prominences and depressions on which a plurality of molecules are...
US20090101981 ONE-TRANSISTOR TYPE DRAM  
A one-transistor type DRAM simplifies a manufacturing process and reduces the height of a chip. In the one-transistor type DRAM, an active region is defined by a device isolating film. A first word...
US20090101956 EMBEDDED TRENCH CAPACITOR HAVING A HIGH-K NODE DIELECTRIC AND A METALLIC INNER ELECTRODE  
A deep trench is formed in a semiconductor substrate and a pad layer thereupon, and filled with a dummy node dielectric and a dummy trench fill. A shallow trench isolation structure is formed in...
US20090096003 SEMICONDUCTOR CELL STRUCTURE INCLUDING BURIED CAPACITOR AND METHOD FOR FABRICATION THEREOF  
A semiconductor structure and a method for fabricating the semiconductor structure include at least one field effect transistor, and also a capacitor, located over a substrate. In particular, the...
US20090090951 Capacitors Integrated with Metal Gate Formation  
A semiconductor structure including a capacitor having increased capacitance and improved electrical performance is provided. The semiconductor structure includes a substrate; and a capacitor over...
US20090090996 SEMICONDUCTOR DEVICE WITH CONTACT STABILIZATION BETWEEN CONTACT PLUGS AND BIT LINES AND METHOD FOR MANUFACTURING THE SAME  
A semiconductor device includes a semiconductor substrate divided into a cell array region, a core region, and a peripheral region. Bit lines are formed in the respective regions. Storage node...
US20090090950 SEMICONDUCTOR DEVICES  
Methods, devices, modules, and systems providing semiconductor devices in a stacked wafer system are described herein. One embodiment includes a first wafer for NMOS transistors in a CMOS...
US20090090946 DRAM CELL WITH MAGNETIC CAPACITOR  
A DRAM cell includes a substrate, a transistor, and a magnetic capacitor. The substrate is composed of semiconductor material with a main surface, the transistor is formed at the main surface, and...
US20090085085 DRAM CELL WITH CAPACITOR IN THE METAL LAYER  
A DRAM cell includes a substrate, a transistor, and a capacitor. The substrate is composed of semiconductor material with a main surface, the transistor is formed at the main surface, and the...
US20090085084 Integrated Circuit and Methods of Manufacturing the Same  
A method of manufacturing an integrated circuit includes forming landing pads in an array region of a substrate, individual ones of the landing pads being electrically coupled to individual ones of...
US20090073736 SEMICONDUCTOR DEVICE HAVING STORAGE NODES ON ACTIVE REGIONS AND METHOD OF FABRICATING THE SAME  
A semiconductor device includes an active region in a semiconductor substrate, having first, second and third regions sequentially arranged in the active region. An inactive region in the...
Matches 1 - 50 out of 146 1 2 3 >