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US20090315133 IMAGE SENSOR MODULE AND CAMERA MODULE HAVING SAME  
An exemplary image sensor module includes a heat pipe and an image sensor. The heat pipe includes a main body and a working fluid. The main body includes a top flat cover, an opposite bottom flat...
US20090315068 LIGHT EMITTING DEVICE  
A light emitting device includes: a light emitting element; a first lead including a die pad portion at its one end portion, the light emitting element being bonded to the die pad portion; a second...
US20090289323 Apparatus For Implementing Multiple Integrated Circuits Using Different Gate Oxide Thicknesses On A Single Integrated Circuit Die  
An apparatus comprising plurality of functional integrated circuit blocks, each manufactured with different oxide thicknesses on a monolithic integrated circuit die, is described. Using different...
US20090278222 INTEGRATED CIRCUIT WITH UNIFORM POLYSILICON PERIMETER DENSITY, METHOD AND DESIGN STRUCTURE  
Disclosed are embodiments of forming an integrated circuit with a desired decoupling capacitance and with the uniform and targeted across-chip polysilicon perimeter density. The method includes...
US20090272997 LED STRUCTURE TO INCREASE BRIGHTNESS  
A light emitting semiconductor device comprising an LED having an emission aperture located on a surface of the LED and the emission aperture has a size that is smaller than a surface area of the...
US20090267175 DOUBLE PATTERNING TECHNIQUES AND STRUCTURES  
Double patterning techniques and structures are generally described. In one example, a method includes depositing a first photoresist to a semiconductor substrate, forming a first integrated...
US20090261327 PROCESS FOR THE SIMULTANEOUS DEPOSITION OF CRYSTALLINE AND AMORPHOUS LAYERS WITH DOPING  
One embodiment of the present invention relates to method for the concurrent deposition of multiple different crystalline structures on a semiconductor body utilizing in-situ differential epitaxy....
US20090261454 CAPACITOR IN SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME  
A capacitor includes a bottom electrode, a dielectric layer and a top electrode over a substrate. A Ru X Ti Y O Z film is included in at least one of the bottom and top electrodes, where x, y and...
US20090256236 MEMS-topped integrated circuit with a stress relief layer and method of forming the circuit  
The bow in a wafer that results from fabricating a large number of MEMS devices on the top surface of the passivation layer of the wafer so that a MEMS device is formed over each die region is...
US20090236496 PHOTOELECTRIC CONVERSION DEVICE  
Objects are to suppress reduction in current output from a photoelectric conversion device and to prevent ESD from occurring in the photoelectric conversion device without greatly increasing the...
US20090230311 IMAGE PICKUP APPARATUS AND RADIATIOIN IMAGE PICKUP APPARATUS  
To improve a sensor resetting method and thereby implement a high rate at which a moving image is read, the invention provides an image pickup apparatus and a radiation image pickup apparatus...
US20090224394 SOLID-STATE IMAGE SENSING APPARATUS AND PACKAGE OF SAME  
Warpage and twist of a solid-state image sensing apparatus is controlled, thereby preventing displacement occurring to the solid-state image sensing apparatus when it is mounted on a printed...
US20090212853 APPARATUS FOR SUPPLYING POWER IN SEMICONDUCTOR INTEGRATED CIRCUIT AND INPUT IMPEDANCE CONTROL METHOD OF THE SAME  
An apparatus for supplying power in a semiconductor integrated circuit includes a plurality of power lines, each supplying external power to an interior of the semiconductor integrated circuit, and...
US20090206444 INTEGRATED SEMICONDUCTOR DEVICE  
An integrated semiconductor device includes a plurality of semiconductor elements having different integrated element circuits or different sizes; an insulating material arranged between the...
US20090206431 Imager wafer level module and method of fabrication and use  
Imager wafer level modules, methods of assembly for imager wafer level modules, and systems containing imager wafer level modules. An imager die and an optic lens stack are combined to form a...
US20090200627 Image sensor with high conversion efficiency  
An image sensor includes a photoelectric converter, a reflector, and a charge carrier guiding region. The reflector is disposed under the photoelectric converter, and the charge carrier guiding...
US20090200617 SEMICONDUCTOR INTEGRATED CIRCUIT  
Logic LSI includes first power domains PD 1 to PD 4 , thick-film power switches SW 1 to SW 4 , and power switch controllers PSWC 1 to PSWC 4 . The thick-film power switches are formed by...
US20090194840 Method of Double Patterning, Method of Processing a Plurality of Semiconductor Wafers and Semiconductor Device  
A method of double patterning is disclosed. The method includes forming a first photosensitive layer; exposing the first photosensitive layer using a first reticle; developing the first...
US20090189255 WAFER HAVING HEAT DISSIPATION STRUCTURE AND METHOD OF FABRICATING THE SAME  
A wafer having a heat dissipation structure is provided. The wafer having the heat dissipation structure includes a wafer and a number of metallic heat dissipation parts. The wafer has a first...
US20090179273 SEMICONDUCTOR DEVICE  
A semiconductor device according to the present invention includes: a first region having a first conductive type; a plurality of second regions having a second conductive type that differs from...
US20090173946 PIXEL STRUCTURE AND ACTIVE DEVICE ARRAY SUBSTRATE  
A pixel structure including an active device, a common line pattern, a protective layer, a pixel electrode, and a patterned semiconductor layer is provided. The active device is disposed on a...
US20090173974 TWO-BY-TWO PIXEL STRUCTURE IN AN IMAGING SYSTEM-ON-CHIP  
The claimed subject matter provides systems and/or methods that facilitate mitigating an impact resulting from mismatch between signal chains in a CMOS imaging System-on-Chip (iSoC) sensor....
US20090173991 METHODS FOR FORMING RHODIUM-BASED CHARGE TRAPS AND APPARATUS INCLUDING RHODIUM-BASED CHARGE TRAPS  
Isolated conductive nanoparticles on a dielectric layer and methods of fabricating such isolated conductive nanoparticles provide charge traps in electronic structures for use in a wide range of...
US20090166778 IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME  
Embodiments relate to an image sensor and a method for manufacturing the same. According to embodiments, a semiconductor substrate may include a pixel part and a peripheral part. A photo diode...
US20090166775 METHOD FOR MANUFACTURING IMAGE SENSOR  
Embodiments relate to an image sensor and a method for manufacturing an image sensor. According to embodiments, a method may include forming a semiconductor substrate including a pixel part and a...
US20090166813 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE  
A method for manufacturing a semiconductor device includes forming a first semiconductor layer on a semiconductor substrate, forming a second semiconductor layer on the first semiconductor layer,...
US20090166801 FUSE OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A method for manufacturing a fuse of a semiconductor device comprises forming an island-type metal fuse in a region where a laser is irradiated, so that laser energy may not be dispersed in a fuse...
US20090160018 INDUCTOR AND MANUFACTURING METHOD THREOF  
An inductor includes an inductor wiring made of a metal layer and having a spiral planar shape. In a cross-sectional shape in a width direction of the inductor wiring, the inductor wiring has a...
US20090152655 MEMS DEVICE  
A method of fabricating a micro-electrical-mechanical system (MEMS) apparatus on a substrate ( 10 ) comprises the steps of processing the substrate ( 10 ) so as to fabricate an electronic circuit (...
US20090152548 Semiconductor Component  
A semiconductor component (has at least one semiconductor chip in which an electrical circuit is integrated. The semiconductor chip is surrounded by an electrically insulating encapsulating...
US20090152678 CAPACITOR OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME  
A capacitor includes a first lower metal layer and an insulating layer on a lower interlayer dielectric layer of a semiconductor substrate; a first upper metal layer aligned on the insulating layer...
US20090152665 FABRICATING METHODS OF PHOTOELECTRIC DEVICES AND PACKAGE STRUCTURES THEREOF  
The invention discloses a method for fabricating a photoelectric device. A ceramic substrate is first provided, and then a first patterned electrode and a second patterned electrode are formed on...
US20090140276 OPTICAL FUNCTIONAL FILM AND METHOD OF MANUFACTURING THE SAME  
A light emitting element includes a light emitting layer emitting light and a refractive index composite structure layer arranged in a light path of the light output from the light emitting layer....
US20090134383 Electrode for Organic Transistor, Organic Transistor, and Semiconductor Device  
It is an object of the present invention, in a case of using a conductive material as part of an electrode for an organic transistor, to provide an organic transistor having a structure whose...
US20090134424 Light emitting structure and securing device thereof  
The light emitting structure disclosed includes a light emitting device, a metal frame, and a repressing fastener. The light emitting device has a plurality of first coupling terminals, and the...
US20090127670 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME AND MASK PATTERN FOR MANUFACTURING THE SAME  
A semiconductor device includes: a semiconductor substrate; and an insulating layer formed on at least a main surface of the semiconductor substrate; wherein a contact hole is formed at the...
US20090121253 LIGHT-EMITTING APPARATUS AND METHOD OF MANUFACTURING THE SAME  
The present invention provides a light-emitting apparatus capable of improving brightness and reducing power consumption and a method of manufacturing the same. The light-emitting apparatus...
US20090114988 Semiconductor Integrated Circuit Device And Method For Manufacturing Same  
A semiconductor integrated circuit device ( 10 ) which has a layered structure is composed of a plurality of semiconductor layers (L 1 , L 2 , L 3 ) in which an integrated circuit is formed on a...
US20090117673 FAILURE DETECTING METHOD, FAILURE DETECTING APPARATUS, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD  
A failure detecting method has inputting a foreign substance inspection map created by foreign substance inspection for a wafer surface after each processing process in a wafer processing process,...
US20090108393 Semiconductor Device With a Plurality of Ground Planes  
A multi-chip module (MCM) with a plurality of ground planes/layers is provided. Each integrated circuit (IC) chip of the MCM has its own ground plane on a substrate in the MCM. This MCM structure...
US20090109582 Method of protecting circuits using integrated array fuse elements and process for fabrication  
In one exemplary embodiment, a detector of electromagnetic radiation includes: a substrate; at least one layer of semiconductor material formed on the substrate, said at least one layer of...
US20090090904 Organic semiconductor device  
Provided is an organic tunneling p-n junction diode. The organic tunneling p-n junction diode includes an n-doped organic semiconductor layer and a p-doped organic semiconductor layer which are...
US20090090990 FORMATION OF NITROGEN CONTAINING DIELECTRIC LAYERS HAVING AN IMPROVED NITROGEN DISTRIBUTION  
Provided is a method for manufacturing a gate dielectric. This method, without limitation, includes subjecting a silicon substrate to a first plasma nitridation process to incorporate a nitrogen...
US20090085149 SEMICONDUCTOR DEVICE AND METHOD OF PROCESSING THE SAME  
Provided is a semiconductor wafer. In the semiconductor wafer, formation and etching of an n type epitaxial layer and formation and etching of a p type epitaxial layer are alternately performed for...
US20090085147 MULTI-DIRECTIONAL TRENCHING OF A DIE IN MANUFACTURING SUPERJUNCTION DEVICES  
A method of manufacturing a superjunction device includes providing a semiconductor wafer having at least one die. At least one first trench having a first orientation is formed in the at least one...
US20090079023 METHOD OF FABRICATING AN INTEGRATED CIRCUIT WITH STRESS ENHANCEMENT  
A method of fabricating an integrated circuit including arranging a plurality of cells to form a desired floor plan of the integrated circuit, wherein each cell comprises at least one transistor,...
US20090072344 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME  
A method for fabricating a semiconductor device includes forming an insulating pattern over a semiconductor substrate. An epitaxial growth layer is formed over the semiconductor substrate exposed...
US20090065704 IMPLEMENTATION OF AVALANCHE PHOTO DIODES IN (BI) CMOS PROCESSES  
A radiation detector ( 46 ) includes a semiconductor layer(s) ( 12 ) formed on a substrate ( 14 ) and a scintillator ( 30 ) formed on the semiconductor layer(s) ( 12 ). The semiconductor layer(s) (...
US20090065889 Semiconductor integrated circuit device and method for designing the same  
A semiconductor integrated circuit device has a basic cell structure which allows avoidance of wiring congestion of signal lines or the like. The semiconductor integrated circuit device comprises a...
US20090057812 Semiconductor device having multiple element formation regions and manufacturing method thereof  
In a manufacturing of a semiconductor device, at least one of elements is formed in each of element formation regions of a substrate having a main side and a rear side, and the substrate is thinned...
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