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US20090108383 |
High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10...
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US20090065909 |
Segmented magnetic shielding elements
A second shield layer, under the master shielding layer, is added to a segmented MRAM array. This additional shielding is patterned so as to provide one shield per bit slice. The placement of...
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US20080310213 |
METHOD AND SYSTEM FOR PROVIDING SPIN TRANSFER TUNNELING MAGNETIC MEMORIES UTILIZING NON-PLANAR TRANSISTORS
A magnetic memory cell and a magnetic memory incorporating the cell are described. The magnetic memory cell includes at least one magnetic element and at least one non-planar selection device. The...
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US20080296711 |
MAGNETOELECTRONIC DEVICE HAVING ENHANCED PERMEABILITY DIELECTRIC AND METHOD OF MANUFACTURE
A magnetoelectronic device structure 20 includes programming lines 26 and 28 and a magnetoelectronic device 24 between the programming lines 26 and 28. In one embodiment, layers 38,...
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US20080277703 |
MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME
A magnetic random access memory includes a single tunnel junction element which includes a first fixed layer, a first recording layer, and a first nonmagnetic layer, a double tunnel junction...
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US20080258247 |
SPIN-TRANSFER MRAM STRUCTURE AND METHODS
A spin-transfer MRAM bit includes a free magnet layer positioned between a pair of spin polarizers, wherein at least one of the spin polarizers comprises an unpinned synthetic antiferromagnet...
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US20080094886 |
NON-UNIFORM SWITCHING BASED NON-VOLATILE MAGNETIC BASED MEMORY
One embodiment of the present invention includes a non-uniform switching based non-volatile magnetic memory element including a fixed layer, a barrier layer formed on top of the fixed layer, a...
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US20080044930 |
TRANSPLANTED MAGNETIC RANDOM ACCESS MEMORY (MRAM) DEVICES ON THERMALLY-SENSITIVE SUBSTRATES USING LASER TRANSFER AND METHOD OF MAKING THE SAME
A method of forming a magnetic memory device (and a resulting structure) on a low-temperature substrate, includes forming the memory device on a transparent substrate coated with a decomposable...
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