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US20080191223 CLEAVED FACET (Ga,Al,In)N EDGE-EMITTING LASER DIODES GROWN ON SEMIPOLAR BULK GALLIUM NITRIDE SUBSTRATES  
A III-nitride edge-emitting laser diode is formed on a surface of a III-nitride substrate having a semipolar orientation, wherein the III-nitride substrate is cleaved by creating a cleavage line...
US20070057267 Led array cooling system  
A LED array cooling system including a LED array and a substrate attached to the LED array wherein the LED array includes a plurality of walls that at least in part define a plurality of passages...
US20140346542 HIGH LIGHT EXTRACTION EFFICIENCY NITRIDE BASED LIGHT EMITTING DIODE BY SURFACE ROUGHENING  
A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby...
US20080054279 Phosphor Position in Light Emitting Diodes  
A method of forming an LED lamp with a desired distribution of phosphor is disclosed. The method includes the steps of mixing a plurality of phosphor particles in an uncured polymer resin for...
US20050230697 Hyperboloid-drum structures and method of fabrication of the same using ion beam etching  
The present invention relates to a method of mass fabricating a hyperboloid-drum element which is uniform in size and with the diameter of an active layer (active region or gain medium) ranging...
US20110163335 SHAPED CONTACT LAYER FOR LIGHT EMITTING HETEROSTRUCTURE  
An improved light emitting heterostructure and/or device is provided, which includes a contact layer having a contact shape comprising one of: a clover shape with at least a third order axis of...
US20060038184 Light-emitting device, manufacturing method of particle and manufacturing method of light-emitting device  
A light-emitting device includes, in order of mention: a positive hole supply layer; a particle layer comprising particles of semiconductor crystals and a conductive medium, the conductive medium...
US20070085098 Patterned devices and related methods  
Devices, such as light-emitting devices (e.g., LEDs), and methods associated with such devices are provided. The device may include an interface having a dielectric function that varies spatially...
US20140284614 METHODS FOR EPITAXIAL DEVICES  
Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial...
US20060175625 Light emitting element, lighting device and surface emission illuminating device using it  
In a non-sealed type light emitting device in which a diode structure on a face of a transparent substrate by lamination of an n-type semiconductor layer and a p-type semiconductor layer, an outer...
US20080111143 LIGHT-EMITTING MODULE OF VEHICULAR LAMP  
A light-emitting module includes a semiconductor light-emitting element with a generally oblong shape, and a planar electrode formed on a surface of the semiconductor light-emitting element. The...
US20090194775 SEMICONDUCTOR LIGHT EMITTING DEVICES WITH HIGH COLOR RENDERING  
A packaged light emitting device (LED) includes a light emitting diode configured to emit primary light having a peak wavelength that is less than about 465 nm and having a shoulder emission...
US20100006876 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE WITH SURFACE TEXTURE AND ITS MANUFACTURE  
A nitride semiconductor light emitting device includes: a substrate for growing nitride semiconductor of a hexagonal crystal structure; a first nitride semiconductor layer of a first conductivity...
US20080258130 Beveled LED Chip with Transparent Substrate  
A light emitting diode is disclosed that includes a transparent (and potentially low conductivity) silicon carbide substrate, an active structure formed from the Group III nitride material system...
US20060243993 Light emitting diode chip and light emitting diode using the same  
A light emitting diode chip includes a first electrode (13), a reflective layer (11) formed on the first electrode, a light emitting layer (12) formed on the reflective layer and a second...
US20130032836 N-TYPE GALLIUM-NITRIDE LAYER HAVING MULTIPLE CONDUCTIVE INTERVENING LAYERS  
A vertical GaN-based blue LED has an n-type layer comprising multiple conductive intervening layers. The n-type layer contains a plurality of periods. Each period of the n-type layer includes a...
US20120205691 Controlling Pit Formation in a III-Nitride Device  
A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one...
US20090261363 Group-III Nitride Epitaxial Layer on Silicon Substrate  
A semiconductor device includes a silicon substrate; silicon faceted structures formed on a top surface of the silicon substrate; and a group-III nitride layer over the silicon faceted structures....
US20060273328 Light emitting nanowires for macroelectronics  
Systems and methods to fabricate macroelectronic light emitting devices using densely oriented nanowires are disclosed. In one embodiment, core nanowires are synthesized and an insulating shell is...
US20070138493 Light-receiving module  
A light receiving module M comprises a photodiode 1, an IC chip 2, a light permeable and electrically insulating sealing resin member 4 for sealing the photodiode 1 and the IC chip 2, a lens 43...
US20090159908 SEMICONDUCTOR LIGHT EMITTING DEVICE WITH LIGHT EXTRACTION STRUCTURES  
Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a...
US20070296092 Pixel circuit  
A pixel circuit includes a LED, first switch, second switch, first transistor, second transistor and capacitor. The LED has a first end receiving a first supply voltage. The first switch has a...
US20090236621 Low index spacer layer in LED devices  
A light emitting diode (LED) device having a low index of refraction spacer layer separating the LED chip and a functional layer. The LED chip has a textured light emission surface to increase...
US20100139759 OPTICAL DEVICE  
The present invention relates to an optical device and to a method of fabricating the same. In embodiments, the invention relates to a photovoltaic device or solar cell. The optical device...
US20060145170 Nitride based semiconductor light emitting device  
The present invention provides a nitride-based semiconductor light emitting device basically comprising a first conductivity type nitride semiconductor layer, active layer and second conductivity...
US20130270589 OPTOELECTRONIC DEVICE WITH NON-CONTINUOUS BACK CONTACTS  
An optoelectronic device is disclosed. The optoelectronic device comprises a semiconductor structure; a plurality of contacts on the front side of the semiconductor structure; and a plurality of...
US20130299844 ENHANCED LIGHT EXTRACTION EFFICIENCY FOR LIGHT EMITTING DIODES  
Systems, methods, and other embodiments associated with increased light extraction efficiency in light emitting diodes are described. According to one embodiment, a light emitting diode apparatus...
US20150155437 LIGHT EXTRACTION USING FEATURE SIZE AND SHAPE CONTROL IN LED SURFACE ROUGHENING  
The structural characteristics of the light-exiting surface of a light emitting device (200) are controlled so as to increase the light extraction efficiency of that surface (225) when the surface...
US20090032799 LIGHT EMITTING DEVICE  
A light emitting device includes a substrate having a first surface and a second surface not parallel to the first surface, and a light emission layer disposed over the second surface to emit...
US20140167082 GaN LEDs WITH IMPROVED AREA AND METHOD FOR MAKING THE SAME  
Enlightening device and method for making the same are disclosed. Individual light emitting devices such as LEDs are separated to form individual dies by process in which a first narrow trench...
US20070249109 Optical device and optical module  
A high resistance re-grown layer is disposed around an optical device having a mesa structure. Thus, a mesa portion having a plane direction that appears in etching of a circular main structure is...
US20050145864 Semiconductor light-emitting element and method of manufacturing the same  
There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate...
US20140159082 LIGHT-EMITTING DEVICE  
A light-emitting device including a substrate, a photoelectric structure and a coarse structure is provided. The substrate has an upper surface and a lower surface opposite to each other, and an...
US20130228807 METHOD OF SEPARATING NITRIDE FILMS FROM GROWTH SUBSTRATES BY SELECTIVE PHOTO-ENHANCED WET OXIDATION AND ASSOCIATED SEMICONDUCTOR STRUCTURE  
Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a semiconductor structure may comprise: a...
US20060151798 Semiconductor light emitting element and semiconductor light emitting device  
For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting...
US20150123152 LIGHT-EMITTING ELEMENT  
A light-emitting element includes a light-emitting stacked layer including an upper surface, wherein the upper surface includes a first flat region; a protective layer including a current blocking...
US20140016660 Metallic Contact for Optoelectronic Semiconductor Device  
A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact...
US20140077234 SEMICONDUCTOR STRUCTURE WITH PATTERNED BURIED LAYER  
An apparatus comprises a substrate, a first buried layer formed over the substrate, the first buried layer comprising one or more raised mesa structures, a second buried layer formed over the...
US20090014734 SEMICONDUCTOR LIGHT EMITTING DEVICE  
A semiconductor light emitting device includes an active layer, an electrode formed above the active layer, a current spreading layer formed between the active layer and the electrode, having...
US20140353700 HETEROJUNCTION LIGHT EMITTING DIODE  
A method for forming a light emitting device includes forming a monocrystalline III-V emissive layer on a monocrystalline substrate and forming a first doped layer on the emissive layer. A first...
US20140103376 LIGHT-EMITTING DEVICE HAVING A PATTERNED SURFACE  
The disclosure provides a light-emitting device. The light-emitting device comprises: a substrate having a first patterned unit; and a light-emitting stack on the substrate and having an active...
US20130248901 LIGHT-EMITTING DIODE COMPRISING DIELECTRIC MATERIAL LAYER AND MANUFACTURING METHOD THEREOF  
Disclosed is a light-emitting diode with a semiconductor layer including dielectric material layer, and a manufacturing method thereof for increasing the external quantum efficiency. The...
US20130020596 LUMINOUS DEVICES, PACKAGES AND SYSTEMS CONTAINING THE SAME, AND FABRICATING METHODS THEREOF  
The present invention is directed to a vertical-type luminous device and high through-put methods of manufacturing the luminous device. These luminous devices can be utilized in a variety of...
US20100220757 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF  
One embodiment of the present invention provides a semiconductor light-emitting element having both high light-extraction efficiency and excellent adhesion between a light-extraction surface and a...
US20100193769 LIGHT SOURCE, AND DEVICE  
In accordance with the invention, a light source for display and/or illumination is provided, the light source comprising a heterostructure including semiconductor layers, the heterostructure...
US20100163894 Group III nitride-based compound semiconductor light-emitting device  
In the Group III nitride-based compound semiconductor light-emitting device of the invention, an non-light-emitting area is formed in a light-emitting layer. In a light-emitting diode where light...
US20100072497 LIGHT EMITTING DIODE CHIP  
A light emitting diode chip includes a permanent substrate having a holding space formed on the permanent substrate; an insulating layer and a metal layer sequentially formed on the permanent...
US20080093611 Method for Production of a Radiation-Emitting Semiconductor Chip  
A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip. The semiconductor layer sequence is grown on a substrate. A...
US20060180820 Light-emitting semiconductor chip and method for the manufacture thereof  
A semiconductor chip, particularly a radiation-emitting semiconductor chip, comprises an active thin-film layer in which a photon-emitting zone is formed, and a carrier substrate for the thin-film...
US20160211414 LIGHT-EMITTING ELEMENT HAVING A REFLECTIVE STRUCTURE WITH HIGH EFFICIENCY  
An optoelectronic element comprises a semiconductor stack comprising an active layer, wherein the semiconductor stack has a first surface and a second surface opposite to the first surface; a...

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