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US20090321745 |
SEMICONDUCTOR LIGHT-EMITTING DEVICE
A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first...
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US20090315047 |
Warm white light-emitting diode and thin film and its red phosphor powder
The invention discloses a red phosphor powder which is based on strontium (Sr) aluminiate and using europium (Eu) as exciting agent, and is characterized by that its chemical equivalence formula is...
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US20090315046 |
GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP
The present invention provides a group-III nitride compound semiconductor light-emitting device having high productivity and good emission characteristics, a method of manufacturing a group-III...
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US20090315012 |
LIGHT EMITTING DEVICE STRUCTURE HAVING NITRIDE BULK SINGLE CRYSTAL LAYER
The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer, a p-type nitride...
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US20090309111 |
SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING GRADED REGION
One or more regions of graded composition are included in a III-P light emitting device, to reduce the V f associated with interfaces in the device. In accordance with embodiments of the...
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US20090301564 |
Semiconductor nanocrystals heterostructures
A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be...
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US20090289252 |
Light Emitting Element and Display Device Using The Same
An object of the invention is to provide a highly reliable light emitting element with low drive voltage and longer life than a conventional light emitting element, and a display device using the...
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US20090283782 |
Nitride Semiconductor Device
There is provided a nitride semiconductor light emitting device having a vertical type device in which a pair of electrodes is formed on both sides of a chip, by using a semiconductor substrate,...
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US20090272992 |
Semiconductor Light-Emitting Device and Process for Producing the Same
A semiconductor light emitting device of the present invention includes a substrate ( 1 ), an n-GaN layer ( 2 ) supported by the substrate ( 1 ), a p-GaN layer ( 7 ) which is located farther from...
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US20090272972 |
ZnO BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURE METHOD
A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnO 1-x1 S x1 ; a second semiconductor layer formed above the first semiconductor layer and...
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US20090272993 |
SEMICONDUCTOR LIGHT EMITTING DEVICE
A semiconductor light emitting device comprises a first nitride semiconductor layer comprising a plurality of concave portions, a reflector in at least one of the concave portions of the first...
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US20090267091 |
SEMICONDUCTOR LIGHT EMITTING DEVICE
A semiconductor light emitting device includes a substrate 11 including a group III-V nitride semiconductor; a first-conductivity-type layer 12 formed on the substrate 11 , the...
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US20090261362 |
4H-POLYTYPE GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE ON A 4H-POLYTYPE SUBSTRATE
4H—InGaAlN alloy based optoelectronic and electronic devices on non-polar face are formed on 4H—AlN or 4H—AlGaN on (11-20) a-face 4H—SiC substrates. Typically, non polar 4H—AlN is grown...
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US20090261361 |
III-NITRIDE LIGHT EMITTING DEVICE WITH DOUBLE HETEROSTRUCTURE LIGHT EMMITTING REGION
A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded...
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US20090256165 |
METHOD OF GROWING AN ACTIVE REGION IN A SEMICONDUCTOR DEVICE USING MOLECULAR BEAM EPITAXY
A method of making an (Al, Ga, In)N semiconductor device having a substrate and an active region is provided. The method includes growing the active region using a combination of (i)...
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US20090250712 |
LIGHT EMITTING DEVICE
A light emitting device is provided, which includes a light-emitting structure and a magnetic material. The light-emitting structure has an exciting binding energy of a bandgap. The magnetic...
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US20090250711 |
Substrate for forming light-emitting layer, light emitter and light-emitting substance
To also intend the improvement of light-emitting efficiency by microcrystallizing light-emitting layer while utilizing vapor-phase growth method that is advantageous for improving crystal quality,...
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US20090242904 |
Semiconductor Light Emitting Apparatus and Optical Print Head
A semiconductor light emitting apparatus is supplied capable of providing a high performance that can optimize simultaneously both an electrical characteristic and a light emitting characteristic....
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US20090236590 |
Light-Emitting Element, Light-Emitting Device and Electronic Device
A light-emitting element with improved emission efficiency is provided. The light-emitting element includes a light-emitting layer in which a first light-emitting layer and a second light-emitting...
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US20090230878 |
GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT ASSEMBLY, LIGHT-EMITTING APPARATUS, METHOD OF MANUFACTURING GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF DRIVING GaN-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND IMAGE DISPLAY APPARATUS
A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of...
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US20090224270 |
GROUP III NITRIDE SEMICONDUCTOR THIN FILM AND GROUP III SEMICONDUCTOR LIGHT EMITTING DEVICE
A group III nitride semiconductor thin film and a group III nitride semiconductor light emitting device using the same. The group III nitride semiconductor thin film includes a substrate with a...
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US20090224269 |
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME, AND EPITAXIAL WAFER
A semiconductor light emitting device includes: an upper growth layer including a light emitting layer; a transparent substrate through which a radiant light from the light emitting layer passes;...
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US20090206362 |
Light emitting diode by use of metal diffusion bonding technology and method of producing such light emitting diode
The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial...
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US20090200565 |
GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE
There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer...
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US20090189167 |
LIGHT EMITTING DEVICE WITH HIGH LIGHT EXTRACTION EFFICIENCY
An exemplary solid-state light emitting device includes a substrate, a light emitting structure, a first electrode and a second electrode have opposite polarities with each other. The light...
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US20090179209 |
LIGHT EMITTING DEVICE
A light emitting device is provided. In the present invention, a magnetic material is added to the light emitting device to change the current path and the distribution of the current density. As...
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US20090173956 |
CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE
An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region...
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US20090166650 |
LIGHT-EMITTING DEVICE OF GROUP III NITRIDE-BASED SEMICONDUCTOR AND MANUFACTURING METHOD THEREOF
A light-emitting device of Group III nitride-based semiconductor comprises a substrate, a first Group III nitride layer and a second Group III nitride layer. The substrate comprises a first surface...
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US20090159908 |
SEMICONDUCTOR LIGHT EMITTING DEVICE WITH LIGHT EXTRACTION STRUCTURES
Structures are incorporated into a semiconductor light emitting device which may increase the extraction of light emitted at glancing incidence angles. In some embodiments, the device includes a...
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US20090159869 |
Solid State Light Emitting Device
A semiconductor structure ( 10, 10′, 70, 80 ) includes a light emitter ( 12, 72 ) carried by a support structure ( 11 ). The light emitter ( 12, 72 ) includes a base region ( 24, 76 ) with a...
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US20090159907 |
TEXTURED LIGHT EMITTING DIODES
A high fill factor textured light emitting diode structure comprises: a first textured cladding and contact layer ( 2 ) comprising a doped III-V or II-VI group compound semiconductor or alloys of...
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US20090152575 |
Orange-yellow silicate phosphor and warm white semiconductor using same
A silicate phosphor prepared from Mg 2 Me +2 0.5 Ln 3 Si 2.5 O 12-2y N −3 y F −1 y , in which Me +2 =Ca, Sr, Ba, Ln=Sc, Lu, Er, Ho, excited by one single ion or an ion pair of d, f-elements...
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US20090152577 |
LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF
A light emitting diode comprises a substrate having a first surface and a second surface, a light emitting epitaxy structure placed on the first surface of the substrate, and a compound reflection...
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US20090152576 |
Blue-green light-emitting semiconductor and phosphor for same
A blue-green light emitting semiconductor having an In—Ga—N heterostructure and covered with a light-converting layer formed of a thermosetting polymer layer and an inorganic phosphor having a...
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US20090146161 |
GROUP III NITRIDE COMPOUND SEMICONDUCTOR STACKED STRUCTURE
An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is...
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US20090146160 |
GALLIUM NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
Provided is a gallium nitride semiconductor light emitting element capable of stabilizing a drive voltage by reducing carrier depletion attributable to spontaneous polarization and piezo...
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US20090140273 |
Epitaxial Wafer for Semiconductor Light Emitting Diode and Semiconductor Light Emitting Diode Using Same
An epitaxial wafer for a semiconductor light emitting device according to the present invention in which at least an n-type cladding layer formed with a mixed crystal made of an AlGaInP material,...
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US20090127571 |
METHOD FOR FABRICATING SEMICONDUCTOR LAYER AND LIGHT-EMITTING DIODE
A semiconductor layer containing defects only in a small density, possessing good quality and exhibiting a large ionic bonding property as to GaN, for example, is formed on a semiconductor layer,...
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US20090121240 |
Nitride Semiconductor Device and Method for Manufacturing the Same
There is provided a nitride semiconductor device with low leakage current and high efficiency in which, while a zinc oxide based compound such as Mg x Zn 1-x O (0≦x≦0.5) is used for a...
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US20090114900 |
SEMICONDUCTOR LIGHT-EMITTING DIODE
A semiconductor light-emitting diode 20 is provided with a silicon single crystal substrate 201 , an intervening layer 203 formed of a Group III nitride semiconductor and stacked on the...
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US20090108276 |
High Efficiency Dilute Nitride Light Emitting Diodes
A light-emitting diode comprising Al n In m Ga 1-m-n N c As v Sb k P 1-c-v-k where 0.001<c<0.1 and 0≦n, m, v, k≦1 adapted to emit light in a wavelength range of about 540 nm to about 700...
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US20090101925 |
Light Emitting Element and Method for Manufacturing the Same
A light emitting element including: a growth substrate, which has, as a main plane, a plane on which cleavage directions are orthogonal to each other; a first nitride semiconductor layer formed on...
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US20090101924 |
Gallium nitride semiconductor device on SOI and process for making same
Methods and apparatus for producing a gallium nitride semiconductor on insulator structure include: bonding a single crystal silicon layer to a transparent substrate; and growing a single crystal...
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US20090095965 |
NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE
A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron...
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US20090095964 |
Nitride Semiconductor Laser Device and Nitride Semiconductor Laser Apparatus
In one embodiment of the present invention, a long-life nitride semiconductor laser element is disclosed wherein voltage characteristics do not deteriorate even when the element is driven at high...
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US20090090922 |
METHOD OF MANUFACTURING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP
Provided are a method of manufacturing a gallium nitride-based compound semiconductor light-emitting device with a low driving voltage (Vf) and high light outcoupling efficiency, a gallium...
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US20090072253 |
SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING UNDERLYING LAYER
Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B)...
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US20090072252 |
Nitride Semiconductor Light Emitting Device and Fabrication Method Therefor
Disclosed is a nitride semiconductor light emitting device including: one or more AllnN layers; an In-doped nitride semiconductor layer formed above the AllN layers; a first electrode contact layer...
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US20090057694 |
LIGHT OPTOELECTRONIC DEVICE AND FORMING METHOD THEREOF
The present invention provides an optoelectronic device with an epi-stacked structure, which includes a substrate, a buffer layer that is formed on the substrate, in which the buffer layer includes...
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US20090057695 |
Nitride Semiconductor Device
A nitride semiconductor device according to the present invention sequentially includes at least an n-electrode, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer....
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