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US20110204321 |
METHOD FOR PRODUCING NANOWIRES USING A POROUS TEMPLATE
Disclosed herein is a method for producing nanowires. The method comprises the steps of providing a porous template with a plurality of holes in the form of tubes, filling the tubes with...
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US20110155995 |
Vertically Oriented Nanostructure and Fabricating Method Thereof
A vertically oriented nanometer-wires structure is disclosed. The vertically oriented nanometer-wires structure includes a non-crystalline base and many straight nanometer-wires. The straight...
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US20120056159 |
CONTROLLED QUANTUM DOT GROWTH
The present disclosure generally relates to techniques for controlled quantum dot growth as well as a quantum dot structures. In some examples, a method is described that includes one or more of...
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US20110315950 |
NANOWIRE FET WITH TRAPEZOID GATE STRUCTURE
In one embodiment, a method of providing a nanowire semiconductor device is provided, in which the gate structure to the nanowire semiconductor device has a trapezoid shape. The method may include...
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US20110168969 |
Large Scale Patterned Growth of Aligned One-Dimensional Nanostructures
A method of making nanostructures using a self-assembled monolayer of organic spheres is disclosed. The nanostructures include bowl-shaped structures and patterned elongated nanostructures. A...
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US20110012086 |
NANOSTRUCTURED FUNCTIONAL COATINGS AND DEVICES
In one aspect of the present invention, an article including a nanostructured functional coating disposed on a substrate is described. The functional coating is characterized by both...
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US20110278534 |
OPTOELECTRONIC DEVICES UTILIZING MATERIALS HAVING ENHANCED ELECTRONIC TRANSITIONS
An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be...
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US20110269240 |
IMMOBILIZING CHEMICAL OR BIOLOGICAL SENSING MOLECULES ON SEMI-CONDUCTING NANOWIRES
The present invention is drawn toward a chemical or biological sensor that can comprise a semi-conducting nanowire and a chemical or biological sensing molecule tethered to the semi-conducting...
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US20110155996 |
BISTABLE CARBAZOLE COMPOUNDS
Bistable carbazole compounds of formula (I) are described, wherein M is Fe, Co, Ru or Os, preferably Fe, useful as basic functional units for computing systems based on the QCA (Quantum Cellular...
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US20110204317 |
Electric energy generator
An electric energy generator may include a semiconductor layer and a plurality of nanowires having piezoelectric characteristics. The electric energy generator may convert optical energy into...
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US20110260775 |
NANOSCALE VARIABLE RESISTOR/ELECTROMECHANICAL TRANSISTOR
A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different...
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US20100316083 |
SUB-WAVELENGTH GRATING INTEGRATED VCSEL
A vertical cavity surface emitting laser (VCSEL) is described using a sub-wavelength grating (SWG) structure that has a very broad reflection spectrum and very high reflectivity. The grating...
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US20080135827 |
MIM transistor
The invention concerns a conducting layer having a thickness of between 1 and 5 atoms, an insulated gate being formed over a part of the conducting layer.
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US20050247923 |
Semiconductor nano-structure and method of forming the same
A semiconductor nano structure having a germanium structure and a germanium nano structure formed on a surface of germanium structure is provided. In addition, a method of forming the semiconductor...
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US20100009134 |
BEAM ABLATION LITHOGRAPHY
Provided are beam ablation lithography methods capable of removing and manipulating material at the nanoscale. Also provided are nanoscale devices, nanogap field effect transistors, nano-wires,...
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US20090184311 |
Nanowire placement by electrodeposition
Electrodeposition is used to deposit nanowires in a controlled fashion with accurate placement and orientation. A substrate is provided with a mesa having electrically conductive sidewalls. The...
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US20120126198 |
LIGHT EMITTING DIODE FOR DROOP IMPROVEMENT
A light emitting diode (LED) device structure with a reduced Droop effect, and a method for fabricating the LED device structure. The LED is a III-nitride-based LED having an active layer or...
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US20110097631 |
ORGANIC/INORGANIC COMPOSITE COMPRISING THREE-DIMENSIONAL CARBON NANOTUBE NETWORKS, METHOD FOR PREPARING THE ORGANIC/INORGANIC COMPOSITE AND ELECTRONIC DEVICE USING THE ORGANIC/INORGANIC COMPOSITE
An organic/inorganic composite is provided. The organic/inorganic composite comprises a silicon (Si) substrate formed with nanorods or nanoholes and three-dimensional networks of carbon nanotubes...
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US20100001255 |
SELECTIVE NANOTUBE FORMATION AND RELATED DEVICES
Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively...
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US20110193054 |
DEPOSITION OF MATERIALS
The method utilises a conducting trench base with non-conducting trench walls to corral charged particles precisely into the trenches. The nanoparticles are close packed in the channels and highly...
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US20110163291 |
SOLID STATE MATERIAL
A solid state system comprising a host material and a quantum spin defect, wherein the quantum spin defect has a T2 at room temperature of about 300 μs or more and wherein the host material ...
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US20110073834 |
ACTIVATION OF GRAPHENE BUFFER LAYERS ON SILICON CARBIDE BY ULTRA LOW TEMPERATURE OXIDATION
A method of electrically activating a structure having one or more graphene layers formed on a silicon carbide layer includes subjecting the structure to an oxidation process so as to form a...
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US20090283693 |
INTEGRALLY GATED CARBON NANOTUBE IONIZER DEVICE
Described herein is a field ionization and electron impact ionization device consisting of carbon nanotubes with microfabricated integral gates that is capable of producing short pulses of ions.
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US20110284819 |
QUANTUM DOT LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
The present invention relates to a quantum dot light emitting element which can form a quantum light emitting layer configured of charge transporting particles and quantum dots and a charge...
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US20050211970 |
Metal nano-objects, formed on semiconductor surfaces, and method for making said nano-objects
Metallic nano-objects, formed on surfaces of semiconductors, and a process for manufacturing these nano-objects. The invention is applicable in nano-electronics and for example provides a means of...
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US20110037048 |
Composition Comprising Rare-earth Dielectric
Compositions comprising a single-phase rare-earth dielectric disposed on a substrate. Embodiments of the present invention provide the basis for high-K gate dielectrics in conventional integrated...
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US20110240954 |
SILICON NANOWIRE COMPRISING HIGH DENSITY METAL NANOCLUSTERS AND METHOD OF PREPARING THE SAME
A silicon nanowire includes metal nanoclusters formed on a surface thereof at a high density. The metal nanoclusters improve electrical and optical characteristics of the silicon nanowire, and thus...
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US20080272361 |
High Density Nanotube Devices
Carbon-nanotube-based devices or nanowire-based devices are formed in multiple layers to obtain higher density of such devices. The layers may be all similar such as all carbon-nanotube-based...
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US20080230763 |
Metallic Nanospheres Embedded in Nanowires Initiated on Nanostructures and Methods for Synthesis Thereof
A nanostructure includes a nanowire having metallic spheres formed therein, the spheres being characterized as having at least one of about a uniform diameter and about a uniform spacing there...
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US20110147697 |
Isolation for nanowire devices
The present disclosure relates to the field of fabricating microelectronic devices. In at least one embodiment, the present disclosure relates to forming an isolated nanowire, wherein isolation...
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US20120126197 |
Structure and process of basic complementary logic gate made by junctionless transistors
The present invention discloses a structure and process of basic complementary logic gate made by junctionless transistors. Junctionless N-channel transistor(s) and junctionless P-channel...
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US20120032148 |
MULTI-JUNCTION PHOTOVOLTAIC CELL WITH NANOWIRES
A multi junction photovoltaic cell for converting light into electrical energy, comprising a substrate (3) having a surface (31), wherein a region (4) at the surface (31) of the substrate (3) is...
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US20110056543 |
HYBRID NANOCOMPOSITE
The invention aims at a hybrid nanocomposite material comprising electrically conducting inorganic elongated nanocrystals grafted on at least part of the surface thereof with an electrically...
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US20090267646 |
Nano-Electron Fluidic Logic (NFL) Device
A nano-electron fluidic logic (NFL) device for controlling launching and propagation of at least one surface plasma wave (SPW) is disclosed. The NFL device comprises a metallic gate patterned with...
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US20120028820 |
HYBRID SENSOR ARRAY
The present invention provides devices, methods and systems to selectively detect the binding of a molecular species to a biomolecule. In its olfactory sensing application, the hybrid sensor arrays...
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US20090214851 |
NANOSTRUCTURE ARRAYS
A nanostructure array including a nanoporous template and a masking material disposed on the nanoporous template such that a first number of the plurality of nanopores are fully coated while a...
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US20110133153 |
POROUS NANOSTRUCTURE AND METHOD OF MANUFACTURING THE SAME
Provided are a porous nanostructure and a method of manufacturing the same. The porous nanostructure includes a plurality of pores disposed on an exterior surface of a nanostructure, wherein at...
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US20120098589 |
FERROELECTRIC NANOSHELL DEVICES
Disclosed herein are nanoscale devices comprising one or more ferroelectric nanoshells characterized as having an extreme curvature in at least one spatial dimension. Also disclosed are...
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US20070290187 |
REPAIR STRUCTURE AND ACTIVE DEVICE ARRAY SUBSTRATE
A repair structure including a substrate, at least one first conducting line, a first insulating layer, at least one second conducting line and a repair connecting layer is provided. The at least...
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US20110121258 |
RECTIFYING ANTENNA DEVICE WITH NANOSTRUCTURE DIODE
A rectifying antenna device is disclosed. The device comprises a pair of electrode structures, and at least one nanostructure diode contacting at least a first electrode structure of the pair and...
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US20070178388 |
Semiconductor devices and methods of manufacturing thereof
Semiconductor devices and methods of manufacturing thereof are disclosed. A plurality of features is formed on a workpiece, the plurality of features being located in a first region and a second...
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US20110132002 |
CORE-SHELL NANOWIRE WITH UNEVEN STRUCTURE AND THERMOELECTRIC DEVICE USING THE SAME
A core-shell nanowire with an uneven surface structure can be advantageously used in thermoelectric devices. The core-shell nanowire with the uneven surface structure includes a core region and a...
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US20110297913 |
NANOSTRUCTURE OPTOELECTRONIC DEVICE HAVING SIDEWALL ELECTRICAL CONTACT
Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have a top electrical contact that is physically and electrically connected to sidewalls of the array of...
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US20120112157 |
NANOWIRE SENSOR WITH ANGLED SEGMENTS THAT ARE DIFFERENTLY FUNCTIONALIZED
A nanowire device includes a nanowire 40 having differently functionalized segments 50, 51. Each of the segments 50, 51 is configured to interact with a species A, B to modulate the conductance of...
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US20080191189 |
Nanotube array electronic devices
The Nanotube Array Ballistic Transistors are disclosed, wherein the ballistic (without collisions) electron propagation along the nanotubes, grown normally to the substrate plane on the common...
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US20080237568 |
Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures
Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures that include one or more nanowires are also disclosed. The nanowires can...
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US20100233426 |
NOBLE METAL SINGLE CRYSTALLINE NANOWIRE AND THE FABRICATION METHOD THEREOF
The present invention provides a method for fabricating a single crystalline noble metal nanowire using noble metal oxide, noble metal material or noble metal halide as a precursor and a single...
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US20120091431 |
Low Temperature Synthesis of Nanowires in Solution
Methods synthesizing nanowires in solution at low temperatures (e.g., about 400° C. or lower) are provided. In the present methods, the nanowires are synthesized by exposing nanowire precursors to ...
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US20110024719 |
LARGE SCALE NANOELEMENT ASSEMBLY METHOD FOR MAKING NANOSCALE CIRCUIT INTERCONNECTS AND DIODES
Nanoelements such as single walled carbon nanotubes are assembled in three dimensions into a nanoscale template on a substrate by means of electrophoresis and dielectrophoresis at ambient...
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US20110062411 |
MOSFET with a Nanowire Channel and Fully Silicided (FUSI) Wrapped Around Gate
Nanowire-channel metal oxide semiconductor field effect transistors (MOSFETs) and techniques for the fabrication thereof are provided. In one aspect, a MOSFET includes a nanowire channel; a fully...
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